2SC4300_01

2SC4300 Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Ratings 900 800 7 5(Pulse10) 2.5 75(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C Application : Switching Regulator and General Purpose (Ta=25°C) Ratings 100max 100max 800min 10 to 30 0.5max 1.2max 6typ 75typ V V 16.2 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=800V VEB=7V IC=10mA VCE=4V, IC=2A IC=2A, IB=0.4A IC=2A, IB=0.4A VCE=12V, IE=–0.5A VCB=10V, f=1MHz External Dimensions FM100(TO3PF) 0.8±0.2 15.6±0.2 5.5±0.2 3.45 ±0.2 5.5 ø3.3±0.2 1.6 Unit µA 23.0±0.3 V 9.5±0.2 µA a b MHz pF 1.75 2.15 1.05 +0.2 -0.1 5.45±0.1 5.45±0.1 4.4 1.5 0.65 +0.2 -0.1 3.3 0.8 sTypical Switching Characteristics (Common Emitter) VCC (V) 250 RL (Ω) 125 IC (A) 2 VBB1 (V) 10 VBB2 (V) –5 IB1 (A) 0.3 IB2 (A) –1 ton (µs) 1max tstg (µs) 5max tf (µs) 1max 3.35 1.5 B C E Weight : Approx 6.5g a. Part No. b. Lot No. I C – V CE Characteristics (Typical) 5 V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s a t) (V ) Base-Emitter Saturation Voltage V B E (s at) (V) (I C /I B =5) I C – V BE Temperature Characteristics (Typical) 5 (V CE =4V) 700mA 60 0m A 500m A 2 Collector Current I C (A) 300mA 3 200mA Collector Current I C (A) 4 400 mA 4 3 mp) Temp ) e Te (Cas 2 I B =100mA 1 2 Te m p) 25˚ C – 5 5 ˚C 1 1 V C E (sat) 0 0.03 0.05 0.1 0.5 C 125˚C ( as e 0 0 1 2 3 4 1 5 10 0 0 0.2 0.4 0.6 0.8 –55˚C (C –55˚C (Case Temp) 25˚C (Case Temp) e Temp) 125˚C (Cas 125˚C 25˚C (Case V B E (sat) ase Tem p) 1.0 Collector-Emitter Voltage V C E (V) Collector Current I C (A) Base-Emittor Voltage V B E (V) (V C E =4V) 50 10 θ j- a ( ˚C/W) h FE – I C Characteristics (Typical) t on • t st g• t f ( µ s) t on •t stg • t f – I C Characteristics (Typical) θ j-a – t Characteristics 2 D C Cur r ent Gai n h F E 25˚C VCC 250V IC:IB1:–IB2 =2:0.3:1 Const. Transient Thermal Resistance 125˚C 5 t s tg 1 –55˚C Switching T im e 0.5 1 0.5 t on 0.2 0.1 0.5 tf 10 5 0.02 0.05 0.1 0.5 1 5 1 5 0.1 1 10 Time t(ms) 100 3.0 1.2 1000 Collector Current I C (A) Collector Current I C (A) Safe Operating Area (Single Pulse) 20 10 5 Collecto r Cur rent I C (A) 10 10 µs Reverse Bias Safe Operating Area 20 10 80 P c – T a Derating 1m 0µ s s 5 Co lle ctor Cu rren t I C ( A) Maxim um Power Dissipatio n P C ( W) 60 W ith In 1 0.5 fin 1 0.5 ite he 40 at si nk 0.1 0.05 Without Heatsink Natural Cooling 0.1 0.05 Without Heatsink Natural Cooling L=3mH IB2=–1.0A Duty:less than 1% 20 0.01 10 50 100 500 1000 0.01 50 100 500 1000 3.5 0 Without Heatsink 0 50 100 150 Collector-Emitter Voltage V C E (V) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C) 99