2SC4301_01

2SC4301 Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) Application : Switching Regulator, Lighting Inverter and General Purpose sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Ratings 900 800 7 7(Pulse14) 3.5 80(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=800V VEB=7V IC=10mA VCE=4V, IC=3A IC=3A, IB=0.6A IC=3A, IB=0.6A VCE=12V, IE=–1A VCB=10V, f=1MHz (Ta=25°C) Ratings 100max 100max 800min 10 to 30 0.5max 1.2max 6typ 105typ V V MHz pF Unit External Dimensions FM100(TO3PF) 0.8±0.2 15.6±0.2 5.5±0.2 3.45 ±0.2 5.5 ø3.3±0.2 1.6 µA V 23.0±0.3 9.5±0.2 µA a b 16.2 1.75 2.15 1.05 +0.2 -0.1 5.45±0.1 1.5 4.4 5.45±0.1 1.5 0.65 +0.2 -0.1 3.3 0.8 sTypical Switching Characteristics (Common Emitter) VCC (V) 250 RL (Ω) 83 IC (A) 3 VBB1 (V) 10 VBB2 (V) –5 IB1 (A) 0.45 IB2 (A) –1.5 ton (µs) 1max tstg (µs) 5max tf (µs) 1max 3.35 B C E Weight : Approx 6.5g a. Part No. b. Lot No. I C – V CE Characteristics (Typical) 1A 700m A V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) Base-Emitter Saturation Voltage V B E (s at) (V) (I C /I B =5) I C – V BE Temperature Characteristics (Typical) 7 (V CE =4V) 6 500mA 1 –55˚C ) (Case Temp ase Tem p) V B E (sat) Collector Current I C (A) 6 Collector Current I C (A) mp) 4 300 mA 25˚C (C 4 Temp ) (Cas 125˚C 2 2 12 5 ˚C V C E (sat) 0 0.02 0.05 0.1 0.5 1 –5 0 25 5˚C 0 1 2 3 4 57 0 0 0.2 0.4 0.6 0.8 –55˚C (C eT (C ˚C 25˚C I B =100mA as (Case emp 125˚C (C ase Tem 200mA emp ase T ) e Te ) p) 1.0 3.0 1.2 Collector-Emitter Voltage V C E (V) Collector Current I C (A) Base-Emittor Voltage V B E (V) (V C E =4V) 50 DC C urrent G ain h FE 10 θ j - a (˚C /W ) h FE – I C Characteristics (Typical) 5˚ t on • t stg • t f – I C Characteristics (Typical) t on • t s t g• t f ( µ s) θ j-a – t Characteristics 2 12 VCC 250V I C :I B1 :I B2 =2:0.3:–1 Const. Transient Thermal Resistance 25˚C C 5 t s tg 1 –55˚C Sw it ching Time 0.5 1 0.5 t on 0.2 0.1 tf 10 5 0.02 0.05 0.1 0.5 1 5 7 0.5 1 5 7 0.1 1 10 Time t(ms) 100 1000 Collector Current I C (A) Collector Current I C (A) Safe Operating Area (Single Pulse) 20 10 10 0µ s Reverse Bias Safe Operating Area 20 10 5 Collect or Cur ren t I C (A) 80 P c – T a Derating Ma xim um Powe r Dissipation P C (W) Co lle ctor Cu rren t I C (A) 5 60 W ith In fin ite he 40 at si 1 1 Without Heatsink Natural Cooling L=3mH IB2=–1.0A Duty :less than1% nk 0.5 Without Heatsink Natural Cooling 0.5 20 Without Heatsink 0.1 50 100 500 1000 0.1 50 100 500 1000 3.5 0 0 25 50 75 100 125 150 Collector-Emitter Voltage V C E (V) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C) 100