2SC4304_01

2SC4304 Silicon NPN Triple Diffused Planar Transistor (High Voltage High Speed Switchihg Transistor) sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Ratings 900 800 7 3(Pulse6) 1.5 35(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C Application : Switching Regulator and General Purpose (Ta=25°C) sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=800V VEB=7V IC=10mA VCE=4V, IC=0.7A IC=0.7A, IB=0.14A IC=0.7A, IB=0.14A VCE=12V, IE=–0.3A VCB=10V, f=1MHz Ratings 100max 100max 800min 10 to 30 0.5max 1.2max 15typ 50typ External Dimensions FM20(TO220F) 4.0±0.2 10.1±0.2 4.2±0.2 2.8 c0.5 Unit µA V V V MHz pF 13.0min 16.9±0.3 8.4±0.2 µA 1.35±0.15 1.35±0.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.2±0.2 2.4±0.2 sTypical Switching Characteristics (Common Emitter) VCC (V) 250 RL (Ω) 357 IC (A) 0.7 VBB1 (V) 10 VBB2 (V) –5 IB1 (A) 0.1 IB2 (A) –0.35 ton (µs) 0.7max tstg (µs) 4.0max tf (µs) 0.7max 2.54 3.9 BCE I C – V CE Characteristics (Typical) 3 V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s a t) (V ) Base-Emitter Saturation Voltage V B E (s at) (V ) (I C /I B =5) I C – V BE Temperature Characteristics (Typical) 3 (V C E =4V) 700mA 500 mA V C E (sat) 2 25˚C (Case Temp) 125˚C (Case Temp) Collector Current I C (A) 300m A 2 200m A Collector Current I C (A) –55˚C (Case Temp) 2 ±0.2 0.8±0.2 a b ø3.3±0.2 Weight : Approx 2.0g a. Part No. b. Lot No. mp) mp) (Cas e Te 100mA 1 V B E (sat) p) –55˚C (Case Tem p) 25˚C (Case Tem Temp) 125˚C (Case Cas 25˚C 0 0 1 2 3 4 0 0.01 0.05 0.1 0.5 1 3 0 0 0.2 0.4 0.6 0.8 –55˚C I B =50mA 125 ˚C ( 1 1 (Cas e Tem e Te p) 1.0 1.2 Collector-Emitter Voltage V C E (V) Collector Current I C (A) Base-Emittor Voltage V B E (V) (V C E =4V) 50 DC C urrent G ain h FE θ j - a ( ˚ C/W) h FE – I C Characteristics (Typical) t o n• t s t g• t f ( µ s) 125˚C 25˚C –55˚C 10 7 5 t on •t stg • t f – I C Characteristics (Typical) θ j-a – t Characteristics 4 V C C 2 50V I C :I B1 :–I B 2 =10:1.5:5 1 tf 0.5 t on 0.1 0.1 Transient Thermal Resistance t s tg Sw it ching Time 1 5 0.5 0.3 2 0.01 0.05 0.1 0.5 1 3 0.5 Collector Current I C (A) 1 2 1 10 Time t(ms) 100 1000 Collector Current I C (A) Safe Operating Area (Single Pulse) 10 5 50 µs 10 0µ Reverse Bias Safe Operating Area 10 5 Ma xim um Powe r Dissipat io n P C (W) 30 35 P c – T a Derating W ith Collector Curr ent I C (A) 1 0.5 Collecto r Cur rent I C (A) 1 0.5 s 1m DC ( Tc =2 5 C ) In s fin ite 10 ms 20 he at si nk 0.1 0.05 Without Heatsink Natural Cooling 0.01 0.1 0.05 Without Heatsink Natural Cooling L=3mH IB2=–1.0A Duty:less than 1% 10 0.01 5 10 50 100 500 1000 0.005 50 100 500 1000 2 0 Without Heatsink 0 25 50 75 100 125 150 0.005 2 Collector-Emitter Voltage V C E (V) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C) 101