2SC4382

2SC4381/4382 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1667/1668) sAbsolute maximum ratings Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Ratings 2SC4381 2SC4382 150 150 6 2 1 25(Tc=25°C) 150 –55 to +150 200 200 (Ta=25°C) Unit V V V A A W °C °C Application : TV Vertical Output, Audio Output Driver and General Purpose (Ta=25°C) sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB Conditions 10max VCB= VEB=6V IC=25mA VCE=10V, IC=0.7A IC=0.7A, IB=0.07A VCE=12V, IE=–0.2A VCB=10V, f=1MHz 150 150min 200 10max 200min 60min 1.0max 15typ 35typ µA V µA V V 16.9±0.3 8.4±0.2 13.0min MHz pF 1.35±0.15 1.35±0.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.2±0.2 2.4±0.2 sTypical Switching Characteristics (Common Emitter) VCC (V) 20 RL (Ω) 20 IC (A) 1 VBB1 (V) 10 VBB2 (V) –5 IB1 (mA) 100 IB2 (mA) –100 ton (µs) 1.0typ tstg (µs) 3.0typ tf (µs) 1.5typ 2.54 3.9 BCE I C – V CE Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s a t) (V ) 2 50 m A V CE ( sat ) – I B Characteristics (Typical) 3 I C – V BE Temperature Characteristics (Typical) 2 (V C E =10V) 1.6 Collector Current I C (A) 2 1.2 Collector Current I C (A) Temp e Temp) 0.8 I B =5mA/Step 25˚C (Cas 0.4 I C = 0 .5 A 1A 100 2A 0 0 0 2 4 6 8 10 0 2 10 1000 0 0.5 Base-Emittor Voltage V B E (V) –55˚C (Cas 1 125˚C (Case e Temp) 1 ) ±0.2 0.8±0.2 a b 4.0±0.2 Ratings 2SC4381 2SC4382 External Dimensions FM20(TO220F) 10.1±0.2 4.2±0.2 2.8 c0.5 Unit ø3.3±0.2 Weight : Approx 2.0g a. Part No. b. Lot No. 1.0 Collector-Emitter Voltage V C E (V) Base Current I B (mA) (V C E =10V) 400 DC Cur rent Gain h F E DC Cur rent Gain h F E 400 (V C E =10V) θ j - a (˚ C/W) Transient Thermal Resistance h FE – I C Characteristics (Typical) h FE – I C Temperature Characteristics (Typical) θ j-a – t Characteristics 6 125 ˚C 2 5 ˚C Typ 100 100 – 3 0 ˚C 1 50 30 0.01 50 30 0.01 0.1 Collector Current I C (A) 1 2 0.1 Collector Current I C (A) 1 2 0.5 1 10 Time t(ms) 100 1000 f T – I E Characteristics (Typical) 30 (V C E =12V) 5 Safe Operating Area (Single Pulse) 30 1m 5m 20 ms P c – T a Derating s C Collecto r Curr ent I C (A) 1 M aximum Power Dissip ation P C (W) D Cut-o ff F requ ency f T (MH Z ) s W 20 Typ 20 ith In fin ite he at si nk 10 0.1 Without Heatsink Natural Cooling 1.2SC4381 2.2SC4382 12 10 Without Heatsink 0 –0.01 0.01 –0.1 –0.5 –1 –2 1 10 Emitter Current I E (A) Collector-Emitter Voltage V C E (V) 100 300 0 0 50 100 150 Ambient Temperature Ta(˚C) 102