2SC4388
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1673) sAbsolute maximum ratings (Ta=25°C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Ratings 200 180 6 15 4 85(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C
Application : Audio and General Purpose
(Ta=25°C) Ratings 10max 10max 180min 50min∗ 2.0max 20typ 300typ V MHz
16.2
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB ∗hFE Rank Conditions VCB=200V VEB=6V IC=50mA VCE=4V, IC=3A IC=5A, IB=0.5A VCE=12V, IE=–0.5A VCB=10V, f=1MHz
External Dimensions FM100(TO3PF)
0.8±0.2 15.6±0.2 5.5±0.2 3.45 ±0.2 5.5 ø3.3±0.2 1.6
Unit
µA
23.0±0.3
V
9.5±0.2
µA
a b
pF
1.75 2.15 1.05 +0.2 -0.1 5.45±0.1 1.5 4.4 5.45±0.1 1.5 0.65 +0.2 -0.1
3.3
0.8
O(50 to 100), P(70 to 140), Y(90 to 180)
sTypical Switching Characteristics (Common Emitter)
VCC (V) 40 RL (Ω) 4 IC (A) 10 VBB1 (V) 10 VBB2 (V) –5 IB1 (A) 1 IB2 (A) –1 ton (µs) 0.5max tstg (µs) 1.8max tf (µs) 0.6max
3.35
B
C
E
Weight : Approx 6.5g a. Part No. b. Lot No.
I C – V CE Characteristics (Typical)
1A
m 00 A
V CE ( sat ) – I B Characteristics (Typical)
Collector-Emitter Saturation Voltage V C E (s at) (V ) 3
I C – V BE Temperature Characteristics (Typical)
15 (V C E =4V)
15
7
0 50
mA
300m A
Collector Current I C (A)
Collector Current I C (A)
20 0m A
10
2
10
100 mA
mp)
e Te
Cas
˚C (
25˚C
I B =20mA
I C =10A 5A 0 0 0.5 1.0 Base Current I B (A) 1.5 2.0 0 0
0
0
1
2
3
4
–30˚C
125
(Case
5
50mA
1
5
(Cas
e Te
1 Base-Emittor Voltage V B E (V)
Temp)
mp)
Collector-Emitter Voltage V C E (V)
(V C E =4V) 300 DC Curr ent Gain h F E DC Cur rent Gain h FE 200 125˚C 100 25˚C
(V C E =4V)
θ j - a (˚C /W)
h FE – I C Characteristics (Typical)
h FE – I C Temperature Characteristics (Typical)
θ j-a – t Characteristics
3
Transient Thermal Resistance
100
Typ
1 0.5
50
50
–30˚C
20 0.02
0.1
0.5
1
5
10 15
20 0.02
0.1
0.5
1
5
10 15
0.1
1
10
100 Time t(ms)
1000 2000
Collector Current I C (A)
Collector Current I C (A)
f T – I E Characteristics (Typical)
(V C E =12V) 30 40
Safe Operating Area (Single Pulse)
100
10 m
P c – T a Derating
10 Cut- off F req uency f T (M H Z ) Collect or Cur ren t I C (A)
DC
s
Maxim um Power Dissipation P C (W)
Typ
10
s
0m
80
20
5
60
1 0.5 Without Heatsink Natural Cooling 0.1
40
10
20 Without Heatsink 0 25 50 75 100 125 150
0 –0.02
–0.1
–1 Emitter Current I E (A)
–10
0.05 3
5
10
50
100
200
3.5 0
Collector-Emitter Voltage V C E (V)
Ambient Temperature Ta(˚C)
103
3.0
2
W ith In fin ite he at si nk
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