2SC4418

2SC4418 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC4418 500 400 10 5(Pulse10) 2 30(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C Application : Switching Regulator and General Purpose External Dimensions FM20(TO220F) 4.0±0.2 10.1±0.2 4.2±0.2 2.8 c0.5 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=500V VEB=10V IC=25mA VCE=4V, IC=1.5A IC=1.5A, IB=0.3A IC=1.5A, IB=0.3A VCE=12V, IE=–0.3A VCB=10V, f=1MHz (Ta=25°C) 2SC4418 100max 100max 400min 10 to 30 0.5max 1.3max 20typ 30typ V V MHz pF Unit µA V 16.9±0.3 8.4±0.2 µA 13.0min 1.35±0.15 1.35±0.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.2±0.2 2.4±0.2 sTypical Switching Characteristics (Common Emitter) VCC (V) 200 RL (Ω) 133 IC (A) 1.5 VBB1 (V) 10 VBB2 (V) –5 IB1 (A) 0.15 IB2 (A) –0.3 ton (µs) 1max tstg (µs) 2.5max tf (µs) 0.5max 2.54 3.9 BCE I C – V CE Characteristics (Typical) 5 1.8 A V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s a t) (V ) Base-Emitter Saturation Voltage V B E (s at) (V ) (I C /I B =5) V C E (sat) 2 –55˚C (Case Temp) 125˚C (Case Temp) I C – V BE Temperature Characteristics (Typical) 5 (V CE =4V) 1.4 A 1A 4 Collector Current I C (A) 60 0m A 3 400 mA Collector Current I C (A) 25˚C (Case Temp) 4 3 200 mA 2 1 100 mA I B =50mA C( 12 25˚ 0 0 1 2 3 4 0 0.01 0.05 0.1 0.5 1 5 0 0 –55 ˚C ( 1 1 5˚C –55˚C (Case Temp) Temp) 25˚C (Case e Temp) 5˚C (Cas 12 2 eT em Tem p) Cas p e Te ) mp) V B E (sat) as (C Ca se ±0.2 0.8±0.2 a b ø3.3±0.2 Weight : Approx 2.0g a. Type No. b. Lot No. 1.0 Base-Emittor Voltage V B E (V) 1.6 Collector-Emitter Voltage V C E (V) Collector Current I C (A) h FE – I C Characteristics (Typical) (V C E =4V) 100 8 t on •t stg • t f – I C Characteristics (Typical) θ j - a (˚C /W) 5 θ j-a – t Characteristics t o n• t s t g• t f ( µ s) DC C urrent G ain h FE V C C 2 00V I C :I B1 :I B2 =10:1:–2 1 0.5 tf t on 0.1 0.1 0.5 t s tg 10 5 Transient Thermal Resistance 50 Typ 5 Sw it ching Time 1 2 0.01 0.05 0.1 0.5 1 5 1 3 0.5 0.4 1 10 Time t(ms) 100 1000 Collector Current I C (A) Collector Current I C (A) Safe Operating Area (Single Pulse) 20 10 5 Collector Cur rent I C (A) DC 10 1m s 10 Reverse Bias Safe Operating Area 20 30 P c – T a Derating s 5 Collect or Cur re nt I C (A) m M aximum Power Dissipa ti on P C ( W) 0µ 50 µs 10 W s ith 20 In fin 1 0.5 1 0.5 ite he at si nk 0.1 0.05 Without Heatsink Natural Cooling 0.1 0.05 Without Heatsink Natural Cooling L=3mH IB2=–0.5A Duty:less than 1% 10 Without Heatsink 2 0.01 2 5 10 50 100 500 0.01 5 10 50 100 500 0 0 25 50 75 100 125 150 Collector-Emitter Voltage V C E (V) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C) 103