2SC4467

2SC4467 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1694) Ratings Unit ICBO VCB=160V 10max µA VCEO 120 V IEBO VEB=6V 10max µA VEBO 6 V V(BR)CEO IC 8 A hFE 120min IC=50mA V VCE=4V, IC=3A 50min∗ 19.9±0.3 Symbol A VCE(sat) IC=3A, IB=0.3A 1.5max V 80(Tc=25°C) W fT VCE=12V, IE=–0.5A 20typ MHz Tj 150 °C COB VCB=10V, f=1MHz 200typ pF –55 to +150 °C ∗hFE Rank 20.0min 3 PC 5.45±0.1 IC (A) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) ton (µs) tstg (µs) tf (µs) 40 10 4 10 –5 0.4 –0.4 0.13typ 3.50typ 0.32typ 0 0 1 2 3 0 4 0 0.1 0.2 0.3 0.4 0 (V C E =4V) 200 Typ 50 1 5 100 25˚C –30˚C 50 20 0.02 8 Transient Thermal Resistance DC Curr ent Gain h FE 125˚C 100 0.1 Collector Current I C (A) 0.5 ) Temp mp) (Case 1.0 1.5 1 5 3 1 0.5 0.3 8 1 10 100 1000 Time t(ms) Collector Current I C (A) f T – I E Characteristics (Typical) e Te 0.5 θ j-a – t Characteristics h FE – I C Temperature Characteristics (Typical) 200 Safe Operating Area (Single Pulse) P c – T a Derating (V C E =12V) 40 80 20 10 10 s 40 at si nk Without Heatsink Natural Cooling he 0.5 ite 10 1 60 fin 20 DC In Collector Cur rent I C (A) 5 Typ ith M aximum Power Dissipa ti on P C ( W) 30 m 100ms W Cut-o ff Fr equ ency f T (M H Z ) DC Curr ent Gain h FE 0 Base-Emittor Voltage V B E (V) (V C E =4V) 0.5 mp) 4A 2A 0.5 0.6 0.7 0.8 0.9 1.0 Base Current I B (A) h FE – I C Characteristics (Typical) 0.1 e Te I C =8A Collector-Emitter Voltage V C E (V) 20 0.02 2 –30˚C I B =10mA 1 Cas 2 (Cas 20mA 4 ˚C ( 4 6 25˚C 50m A 2 125 75 m A 6 (V C E =4V) 8 3 Collector Current I C (A) A 1.4 E I C – V BE Temperature Characteristics (Typical) θ j- a ( ˚ C/W) m 100 C Weight : Approx 6.0g a. Part No. b. Lot No. V CE ( sat ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) A A 0m 20 350m Collector Current I C (A) 1 A 0.65 +0.2 -0.1 5.45±0.1 B RL (Ω) m 50 2 3 1.05 +0.2 -0.1 VCC (V) 8 2.0±0.1 ø3.2±0.1 O(50 to100), P(70 to140), Y(90 to180) ■Typical Switching Characteristics (Common Emitter) I C – V CE Characteristics (Typical) a 4.8±0.2 b IB Tstg 15.6±0.4 9.6 1.8 Conditions V 5.0±0.2 Unit 160 2.0 Ratings VCBO Symbol External Dimensions MT-100(TO3P) (Ta=25°C) 4.0 ■Electrical Characteristics 4.0max ■Absolute maximum ratings (Ta=25°C) Application : Audio and General Purpose 20 Without Heatsink 0 –0.02 –0.1 –1 Emitter Current I E (A) 108 –8 0.1 5 10 50 100 Collector-Emitter Voltage V C E (V) 200 3.5 0 0 25 50 75 100 125 Ambient Temperature Ta(˚C) 150