2SC4467_01

2SC4467 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1694) sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Ratings 160 120 6 8 3 80(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C Application : Audio and General Purpose (Ta=25°C) Ratings 10max 10max 120min 50min∗ 1.5max 20typ 200typ V pF 20.0min 4.0max sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB ∗hFE Rank Conditions VCB=160V VEB=6V IC=50mA VCE=4V, IC=3A IC=3A, IB=0.3A VCE=12V, IE=–0.5A VCB=10V, f=1MHz External Dimensions MT-100(TO3P) 5.0±0.2 15.6±0.4 9.6 2.0 1.8 4.8±0.2 2.0±0.1 Unit µA µA 19.9±0.3 4.0 V a b ø3.2±0.1 MHz 2 3 1.05 +0.2 -0.1 0.65 +0.2 -0.1 1.4 O(50 to100), P(70 to140), Y(90 to180) 5.45±0.1 B C E sTypical Switching Characteristics (Common Emitter) VCC (V) 40 RL (Ω) 10 IC (A) 4 VBB1 (V) 10 VBB2 (V) –5 IB1 (A) 0.4 IB2 (A) –0.4 ton (µs) 0.13typ tstg (µs) 3.50typ tf (µs) 0.32typ 5.45±0.1 Weight : Approx 6.0g a. Part No. b. Lot No. I C – V CE Characteristics (Typical) 350m V CE ( sat ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) 3 I C – V BE Temperature Characteristics (Typical) 8 (V C E =4V) A 8 20 1 m 50 0m A A m 100 A 75 m A Collector Current I C (A) 2 50m A Collector Current I C (A) 6 6 4 4 mp) mp) Cas ˚C ( 2 2 (Cas I B =10mA I C =8A 0 4A 2A 0.5 0.6 0.7 0.8 0.9 1.0 0 0 0 1 2 3 4 0 0.1 0.2 0.3 0.4 0 0.5 –30˚C 25˚C 125 (Case 1 e Te 20mA e Te Temp 1.0 ) 1.5 Collector-Emitter Voltage V C E (V) Base Current I B (A) Base-Emittor Voltage V B E (V) h FE – I C Characteristics (Typical) (V C E =4V) 200 DC Curr ent Gain h FE h FE – I C Temperature Characteristics (Typical) (V C E =4V) 200 125˚C DC Curr ent Gain h FE θ j- a ( ˚ C/W) θ j-a – t Characteristics 3 Typ 100 100 25˚C –30˚C Transient Thermal Resistance 1 50 50 0.5 20 0.02 0.1 0.5 1 5 8 20 0.02 0.3 0.1 0.5 1 5 8 1 10 Time t(ms) 100 1000 Collector Current I C (A) Collector Current I C (A) f T – I E Characteristics (Typical) (V C E =12V) 40 20 Safe Operating Area (Single Pulse) 80 10 m s P c – T a Derating Cut-o ff Fr equ ency f T (M H Z ) 30 Collector Cur rent I C (A) M aximum Power Dissipa ti on P C ( W) 10 5 100ms 60 W ith Typ DC In fin ite he 20 40 at si 1 nk 0.5 Without Heatsink Natural Cooling 10 20 Without Heatsink 0 –0.02 –0.1 –1 Emitter Current I E (A) –8 0.1 5 10 50 100 200 3.5 0 0 25 50 75 100 125 150 Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C) 108