2SC4468

2SC4468 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1695) sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC4468 200 140 6 10 4 100(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C Application : Audio and General Purpose (Ta=25°C) 2SC4468 10max 10max 140min 50min∗ 0.5max 20typ 250typ V MHz pF 20.0min 4.0max 3 1.05 +0.2 -0.1 5.45±0.1 B C E 5.45±0.1 0.65 +0.2 -0.1 1.4 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB ∗hFE Rank Conditions VCB=200V VEB=6V IC=50mA VCE=4V, IC=3A IC=5A, IB=0.5A VCE=12V, IE=–0.5A VCB=10V, f=1MHz External Dimensions MT-100(TO3P) 5.0±0.2 15.6±0.4 9.6 2.0 1.8 4.8±0.2 2.0±0.1 Unit µA µA 19.9±0.3 V 4.0 a b ø3.2±0.1 2 O(50 to100), P(70 to140), Y(90 to180) sTypical Switching Characteristics (Common Emitter) VCC (V) 60 RL (Ω) 12 IC (A) 5 VBB1 (V) 10 VBB2 (V) –5 IB1 (A) 0.5 IB2 (A) –0.5 ton (µs) 0.24typ tstg (µs) 4.32typ tf (µs) 0.40typ Weight : Approx 6.0g a. Type No. b. Lot No. I C – V CE Characteristics (Typical) A 0m V CE ( sat ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) 3 I C – V BE Temperature Characteristics (Typical) 10 (V CE =4V) 10 0m 40 30 2 m 00 A 150 mA A 8 Collector Current I C (A) 100m A 8 Collector Current I C (A) 75 m A 2 6 50 mA 6 Cas (Case 2 25˚C 2 I C =10A 5A 0 0 0.5 1.0 Base Current I B (A) 1.5 2.0 0 0 ˚C ( I B =10mA 0 0 1 2 3 4 –30˚C 125 (Case 20mA 1 e Te 4 1 Base-Emittor Voltage V B E (V) Temp) 4 mp) Temp ) 2 Collector-Emitter Voltage V C E (V) (V C E =4V) 200 DC Cur rent Gain h FE DC Curr ent Gain h FE 300 125˚C 100 25˚C –30˚C (V C E =4V) θ j - a (˚C /W) h FE – I C Characteristics (Typical) h FE – I C Temperature Characteristics (Typical) θ j-a – t Characteristics 3 Typ 100 Transient Thermal Resistance 1 0.5 50 50 20 0.02 0.1 0.5 1 5 10 20 0.02 0.1 0.5 1 5 10 0.1 1 10 100 Time t(ms) 1000 2000 Collector Current I C (A) Collector Current I C (A) f T – I E Characteristics (Typical) (V C E =12V) 40 30 Safe Operating Area (Single Pulse) 100 3m P c – T a Derating 10 Cut- off F req uency f T (M H Z ) 30 Collector Curre nt I C ( A) 10 0m M aximum Power Dissipa ti on P C (W) s W 10 Typ 5 DC ith ms s In fin ite he 20 50 at si nk 1 0.5 Without Heatsink Natural Cooling 10 0 –0.02 –0.1 –1 Emitter Current I E (A) –10 0.1 3 5 10 50 100 200 3.5 0 Without Heatsink 0 25 50 75 100 125 150 Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C) 108