2SC4495

2SC4495 High hFE LOW VCE (sat) Silicon NPN Triple Diffused Planar Transistor hFE IB 1 A VCE(sat) PC 25(Tc=25°C) W fT Tj 150 °C COB –55 to +150 °C Tstg V VCE=4V, IC=0.5A 500min IC=1A, IB=20mA 0.5max V VCE=12V, IE=–0.1A 40typ MHz VCB=10V,f=1MHz 30typ pF 1.35±0.15 1.35±0.15 VBB2 (V) IB1 (mA) IB2 (mA) ton (µs) tstg (µs) tf (µs) 20 20 1 10 –5 15 –30 0.45typ 1.60typ 0.85typ I B =0.5mA 0 1 2 3 4 5 0 ew en 0 6 Collector-Emitter Voltage V C E (V) 3A 1 2A 0.5 I C =1A 10 100 m m (V C E =4V) 0.5 1 D C Cur r ent Gai n h FE ec o 0.1 125˚C 25˚C Transient Thermal Resistance 100 0.01 ot 500 0.5 –55˚C 1000 500 100 50 20 0.01 3 0.1 Collector Current I C (A) 1.5 0.5 1 3 7 5 1 1 10 100 1000 2000 Time t(ms) Collector Current I C (A) f T – I E Characteristics (Typical) 1 θ j-a – t Characteristics h FE – I C Temperature Characteristics (Typical) R 1000 0 Base-Emittor Voltage V B E (V) 5000 N DC Cur rent Gain h FE 0 1000 (V C E =4V) Typ 1 Base Current I B (mA) h FE – I C Characteristics (Typical) 3000 Tem p) mp) 0.5 se 1mA (Ca 1 1.5 ˚C 2mA 2 125 3mA 1 Collector Current I C (A) 5m A θ j- a ( ˚C/W) 2 2.5 rN Collector Current I C (A) 8mA fo A d 12m (V CE =4V) 3 1.5 de 1 B C E Weight : Approx 2.0g a. Part No. b. Lot No. I C – V BE Temperature Characteristics (Typical) V CE ( sa t ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) 3 A 8m es ig VBB1 (V) D IC (A) A 2.4±0.2 2.2±0.2 RL (Ω) 0m 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.54 VCC (V) 3 ø3.3±0.2 a b ■Typical Switching Characteristics (Common Emitter) I C – V CE Characteristics (Typical) 4.0±0.2 A µA 50min 0.8±0.2 3 10max 4.2±0.2 2.8 c0.5 ±0.2 IC VEB=6V IC=25mA 10.1±0.2 3.9 V(BR)CEO µA ns IEBO V Unit 10max Temp) V 6 Ratings VCB=80V (Case 50 VEBO Conditions –55˚C VCEO Symbol e Te ICBO (Cas V 25˚C Unit 80 16.9±0.3 Ratings VCBO Symbol External Dimensions FM20(TO220F) (Ta=25°C) 8.4±0.2 ■Electrical Characteristics 13.0min ■Absolute maximum ratings (Ta=25°C) Application : Audio Temperature Compensation and General Purpose Safe Operating Area (Single Pulse) P c – T a Derating (V C E =12V) 30 1m 10 40 m s s 20 DC 0m Collect or Cur ren t I C (A) Typ s 10 Cu t-off Fre quen cy f T ( MH Z ) 5 M aximum Power Dissipa tion P C (W) 10 60 1 0.5 Without Heatsink Natural Cooling 0.1 Natural Cooling Silicone Grease Heatsink: Aluminum in mm 20 W ith In 150x150x2 1 00x 1 0 10 0x 2 fin ite he at si nk 50x50x2 Without Heatsink 2 0 –0.005 –0.01 0.05 –0.1 Emitter Current I E (A) 110 –1 3 5 10 50 Collector-Emitter Voltage V C E (V) 100 0 0 25 50 75 100 125 Ambient Temperature Ta(˚C) 150