2SC4495_01

High hFE LOW VCE (sat) Silicon NPN Triple Diffused Planar Transistor sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Ratings 80 50 6 3 1 25(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C 2SC4495 Application : Audio Temperature Compensation and General Purpose (Ta=25°C) Ratings 10max 10max 50min 500min 0.5max 40typ 30typ V MHz pF 13.0min sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB Conditions VCB=80V VEB=6V IC=25mA VCE=4V, IC=0.5A IC=1A, IB=20mA VCE=12V, IE=–0.1A VCB=10V,f=1MHz External Dimensions FM20(TO220F) 4.0±0.2 10.1±0.2 4.2±0.2 2.8 c0.5 Unit µA V 16.9±0.3 8.4±0.2 µA 1.35±0.15 1.35±0.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.2±0.2 2.4±0.2 sTypical Switching Characteristics (Common Emitter) VCC (V) 20 RL (Ω) 20 IC (A) 1 VBB1 (V) 10 VBB2 (V) –5 IB1 (mA) 15 IB2 (mA) –30 ton (µs) 0.45typ tstg (µs) 1.60typ tf (µs) 0.85typ 2.54 3.9 BCE I C – V CE Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) 3 3 0m A V CE ( sa t ) – I B Characteristics (Typical) 1.5 I C – V BE Temperature Characteristics (Typical) 3 (V CE =4V) 1 A 8m 12m A 8mA 2.5 Collector Current I C (A) Collector Current I C (A) 2 5m A 3mA 1 2 1.5 Temp) –55˚C (Case Tem p) mp) (Ca 125 2mA 1mA I C =1A 0 0 0 0 1 2 3 4 5 6 1 10 100 1000 0 0.5 25˚C 0.5 ˚C I B =0.5mA 2A (Cas e Te 1 0.5 se 3A 1 ±0.2 0.8±0.2 a b ø3.3±0.2 Weight : Approx 2.0g a. Part No. b. Lot No. 1 1.5 Collector-Emitter Voltage V C E (V) Base Current I B (mA) Base-Emittor Voltage V B E (V) h FE – I C Characteristics (Typical) (V C E =4V) 3000 DC Cur rent Gain h FE h FE – I C Temperature Characteristics (Typical) (V C E =4V) 5000 D C Cur r ent Gai n h FE θ j- a ( ˚C/W) Transient Thermal Resistance θ j-a – t Characteristics 7 5 Typ 1000 125˚C 25˚C –55˚C 1000 500 500 100 50 20 0.01 100 0.01 0.1 0.5 1 3 0.1 0.5 1 3 1 1 10 100 Time t(ms) 1000 2000 Collector Current I C (A) Collector Current I C (A) f T – I E Characteristics (Typical) (V C E =12V) 60 10 5 Cu t-off Fre quen cy f T ( MH Z ) Safe Operating Area (Single Pulse) 30 1m 10 m s P c – T a Derating Natural Cooling Silicone Grease Heatsink: Aluminum in mm 20 W ith In s Collect or Cur ren t I C (A) Typ 40 DC 1 0.5 M aximum Power Dissipa tion P C (W) 10 0m s fin 150x150x2 1 00x 1 0 10 0x 2 ite he at 20 si nk Without Heatsink Natural Cooling 0.1 50x50x2 Without Heatsink 2 0 –0.005 –0.01 0.05 –0.1 Emitter Current I E (A) –1 3 5 10 50 100 Collector-Emitter Voltage V C E (V) 0 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 110