2SC4511_01

2SC4511 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1725) sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Ratings 120 80 6 6 3 30(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C Application : Audio and General Purpose (Ta=25°C) Ratings 10max 10max 80min 50min∗ 0.5max 20typ 110typ V MHz pF 13.0min sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB ∗hFE Rank Conditions VCB=120V VEB=6V IC=25mA VCE=4V, IC=2A IC=2A, IB=0.2A VCE=12V, IE=–0.5A VCB=10V, f=1MHz External Dimensions FM20(TO220F) 4.0±0.2 10.1±0.2 4.2±0.2 2.8 c0.5 Unit µA V 16.9±0.3 8.4±0.2 µA 1.35±0.15 1.35±0.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.2±0.2 2.4±0.2 O(50 to100), P(70 to140), Y(90 to180) 2.54 sTypical Switching Characteristics (Common Emitter) VCC (V) 30 RL (Ω) 10 IC (A) 3 VBB1 (V) 10 VBB2 (V) –5 IB1 (A) 0.3 IB2 (A) –0.3 ton (µs) 0.16typ tstg (µs) 2.60typ tf (µs) 0.34typ 3.9 BCE I C – V CE Characteristics (Typical) 0m A 15 0m A 1 m 00 A A 80m V CE ( sat ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) 3 I C – V BE Temperature Characteristics (Typical) 6 (V CE =4V) 6 20 5 Collector Current I C (A) 50 mA Collector Current I C (A) 4 2 4 3 30mA Cas e Te mp (Cas e Tem ) p) 1 I C =6A 4A 2A 0 0 0.5 1.0 1.5 0 0 0 0 1 2 3 4 –30˚C 25˚C 125 I B =10mA ˚C ( (Case 2 20mA 1 2 1 Base-Emittor Voltage V B E (V) Temp ) ±0.2 0.8±0.2 a b ø3.3±0.2 Weight : Approx 2.0g a. Part No. b. Lot No. 2 Collector-Emitter Voltage V C E (V) Base Current I B (A) h FE – I C Characteristics (Typical) (V C E =4V) 300 DC Curr ent Gain h F E h FE – I C Temperature Characteristics (Typical) (V C E =4V) 200 125˚C DC Cur rent Gain h FE θ j- a ( ˚C/W) θ j-a – t Characteristics 5 100 25˚C –30˚C 100 Typ 50 Transient Thermal Resistance 1 50 0.5 0.4 1 10 100 Time t(ms) 1000 2000 30 0.02 0.1 0.5 1 56 20 0.02 0.1 0.5 1 56 Collector Current I C (A) Collector Current I C (A) f T – I E Characteristics (Typical) (V C E =12V) 40 20 10 Cu t-off Fre quen cy f T (M H Z ) 30 Collector Curre nt I C ( A) 5 Safe Operating Area (Single Pulse) 30 10 m P c – T a Derating 10 DC 0m M aximum Power Dissipa ti on P C (W) s W s ith Typ 20 In fin ite he 20 1 0.5 at si nk 10 10 Without Heatsink Natural Cooling 0.1 Without Heatsink 2 5 10 50 100 0 0 25 50 75 100 125 150 0 –0.02 –0.1 –1 –6 0.05 3 Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C) 111