2SC4517A

2SC4517/4517A Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) sAbsolute maximum ratings (Ta=25°C) Unit V V V A A W °C °C Application : Switching Regulator and General Purpose (Ta=25°C) sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=800V VEB=7V IC=10mA VCE=4V, IC=1A IC=1A, IB=0.2A IC=1A, IB=0.2A VCE=12V, IE=–0.25A VCB=10V, f=1MHz External Dimensions FM20(TO220F) 4.0±0.2 10.1±0.2 4.2±0.2 2.8 c0.5 Symbol 2SC4517 2SC4517A VCBO VCEO VEBO IC IB PC Tj Tstg 900 550 7 3(Pulse6) 1.5 30(Tc=25°C) 150 –55 to +150 1000 2SC4517 2SC4517A 100max 100max 550min 10 to 30 0.5max 1.2max 6typ 35typ Unit µA V V 13.0min 16.9±0.3 8.4±0.2 µA V MHz pF 1.35±0.15 1.35±0.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.2±0.2 2.4±0.2 sTypical Switching Characteristics (Common Emitter) VCC (V) 250 RL (Ω) 250 IC (A) 1 VBB1 (V) 10 VBB2 (V) –5 IB1 (A) 0.15 IB2 (A) –0.45 ton (µs) 0.7max tstg (µs) 4max tf (µs) 0.5max 2.54 3.9 BCE ±0.2 I C – V CE Characteristics (Typical) 3 40 0m A V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s a t) (V ) Base-Emitter Saturation Voltage V B E (s at) (V ) 1.5 I C /I B =5 Const. I C – V BE Temperature Characteristics (Typical) 3 (V C E =4V) 300mA 200 mA Collector Current I C (A) 150 mA 2 100m A Collector Current I C (A) 1.0 V B E (sat) 2 1 I B =40mA 0.5 1 V C E (sat) 0 0.03 0.05 0.1 0.5 1 5 0 0 0.2 0.4 0.6 0.8 1.0 0 0 1 2 3 4 Collector-Emitter Voltage V C E (V) Collector Current I C (A) Base-Emittor Voltage V B E (V) (V C E =4V) 50 DC C urrent G ain h FE 125˚C 25˚C θ j - a ( ˚ C/W) h FE – I C Temperature Characteristics (Typical) t o n• t s t g• t f ( µ s) 7 5 t on •t stg • t f – I C Characteristics (Typical) θ j-a – t Characteristics 4 V C C 2 50V I C :I B 1 :I B2 =1:0.15:–0.45 1 0.5 t on 0.1 0.2 tf –55˚C Transient Thermal Resistance t s tg Sw it ching Time 1 10 0.5 0.3 5 0.02 0.05 0.1 0.5 1 3 0.5 1 3 1 10 Time t(ms) 0.8±0.2 a b ø3.3±0.2 Weight : Approx 2.0g a. Type No. b. Lot No. 100 1000 Collector Current I C (A) Collector Current I C (A) Safe Operating Area (Single Pulse) 10 50 Reverse Bias Safe Operating Area 10 30 P c – T a Derating 5 s Ma xim um Powe r Dissipat io n P C (W) 10 µs 5 0µ W ith Collector Curr ent I C (A) 1 0.5 Co lle ctor Cu rre nt I C (A) 1 0.5 20 In fin ite he at si nk 0.1 0.05 Without Heatsink Natural Cooling 0.1 0.05 Without Heatsink Natural Cooling L=3mH IB2=–1.0A Duty:less than 1% 2SC4517 10 2SC4517A 1000 Without Heatsink 2 0 0 25 50 75 100 125 150 0.01 2 5 10 50 100 500 1000 0.01 50 100 500 Collector-Emitter Voltage V C E (V) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C) 112