2SC4518

2SC4518/4518A Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) Application : Switching Regulator, Lighting Inverter and General Purpose Conditions V ICBO VCB=800V 100max µA VCEO 550 V IEBO VEBO 7 V V(BR)CEO 5(Pulse10) A hFE IC 2SC4518 2SC4518A VEB=7V 100max µA IC=10mA 550min V VCE=4V, IC=1.8A 10 to 25 2.5 A VCE(sat) IC=1.8A, IB=0.36A 0.5max PC 35(Tc=25°C) W VBE(sat) IC=1.8A, IB=0.36A 1.2max V Tj 150 °C fT VCE=12V, IE=–0.35A 6typ MHz –55 to +150 °C COB VCB=10V, f=1MHz 50typ pF 3.9 V 1.35±0.15 1.35±0.15 I C – V CE Characteristics (Typical) 150 mA 2 I B =50mA 1 1 0 2 3 V B E (sat) 0.5 Collector-Emitter Voltage V C E (V) 0.1 0.5 1 5 ns 0 10 m m 0.1 0.5 1 5 t on• t s t g • t f (µs) 1 tf 0.5 t on 0.1 0.2 0.5 10 0µ 0.5 0.3 1 10 100 1000 Time t(ms) P c – T a Derating 35 si nk Collector Curr ent I C ( A) at 1000 he 500 Collector-Emitter Voltage V C E (V) 20 10 Without Heatsink 0.05 0.03 50 ite 0.1 Without Heatsink Natural Cooling L=3mH IB2=–1.0A Duty:less than 1% fin 0.5 In Without Heatsink Natural Cooling 1 30 ith 0.5 100 1.2 W Collecto r Curr ent I C (A) 5 s 1 114 1 5 50 1.0 10 5 0.05 0.03 10 0.8 1 20 20 0.6 4 Reverse Bias Safe Operating Area Safe Operating Area (Single Pulse) 10 0.4 Collector Current I C (A) Collector Current I C (A) 0.1 t s tg V C C 250V I C :I B 1 :I B 2 =1:0.15:–0.5 N 0.05 0.2 θ j-a – t Characteristics M aximum Power Dissip ation P C (W) 5 0.02 7 5 Transient Thermal Resistance 10 0 Base-Emittor Voltage V B E (V) t on •t stg • t f – I C Characteristics (Typical) Swi tchi ng T im e ec o R –55˚C ot DC Cur rent Gain h F E 25˚C es ig 1 (V C E =4V) 125˚C 2 Collector Current I C (A) h FE – I C Temperature Characteristics (Typical) 50 3 V C E (sat) 0 0.03 0.05 4 4 en 0 1.0 θ j - a (˚C /W) Collector Current I C (A) 250 mA 3 I C /I B =5 Const. ew 400 mA 4 (V CE =4V) 5 1.5 rN 600mA mA I C – V BE Temperature Characteristics (Typical) fo 0 70 0.5max 4max V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at ) (V ) Base-Emitter Saturation Voltage V B E (s at) (V) 5 0.7max –0.9 Weight : Approx 2.0g a. Part No. b. Lot No. B C E D 0.27 tf (µs) tstg (µs) Collector Current I C (A) –5 10 1.8 ton (µs) IB2 (A) d 139 250 2.4±0.2 2.2±0.2 IB1 (A) VBB2 (V) VBB1 (V) IC (A) 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.54 de RL (Ω) ø3.3±0.2 a b ■Typical Switching Characteristics (Common Emitter) VCC (V) 4.2±0.2 2.8 c0.5 4.0±0.2 10.1±0.2 IB Tstg External Dimensions FM20(TO220F) Unit 0.8±0.2 1000 Ratings Symbol Unit ±0.2 900 (Ta=25°C) 8.4±0.2 VCBO ■Electrical Characteristics 16.9±0.3 Ratings Symbol 2SC4518 2SC4518A 13.0min ■Absolute maximum ratings (Ta=25°C) 2SC4518 100 500 Collector-Emitter Voltage V C E (V) 2SC4518A 1000 2 0 0 25 50 75 100 125 Ambient Temperature Ta(˚C) 150