2SC4518A

2SC4518/4518A Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) Application : Switching Regulator, Lighting Inverter and General Purpose sAbsolute maximum ratings (Ta=25°C) Ratings Symbol 2SC4518 2SC4518A VCBO VCEO VEBO IC IB PC Tj Tstg 900 550 7 5(Pulse10) 2.5 35(Tc=25°C) 150 –55 to +150 1000 Unit V V V A A W °C °C sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=800V VEB=7V IC=10mA VCE=4V, IC=1.8A IC=1.8A, IB=0.36A IC=1.8A, IB=0.36A VCE=12V, IE=–0.35A VCB=10V, f=1MHz Ratings (Ta=25°C) 2SC4518 2SC4518A 100max 100max 550min 10 to 25 0.5max 1.2max 6typ 50typ V V MHz pF Unit External Dimensions FM20(TO220F) 4.0±0.2 10.1±0.2 4.2±0.2 2.8 c0.5 µA V 16.9±0.3 8.4±0.2 µA 13.0min 1.35±0.15 1.35±0.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.2±0.2 2.4±0.2 sTypical Switching Characteristics (Common Emitter) VCC (V) 250 RL (Ω) 139 IC (A) 1.8 VBB1 (V) 10 VBB2 (V) –5 IB1 (A) 0.27 IB2 (A) –0.9 ton (µs) 0.7max tstg (µs) 4max tf (µs) 0.5max 2.54 3.9 BCE ±0.2 0.8±0.2 a b ø3.3±0.2 Weight : Approx 2.0g a. Part No. b. Lot No. I C – V CE Characteristics (Typical) 5 0 70 mA 600mA V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at ) (V ) Base-Emitter Saturation Voltage V B E (s at) (V) 1.5 I C /I B =5 Const. I C – V BE Temperature Characteristics (Typical) 5 (V CE =4V) Collector Current I C (A) 250 mA 3 1.0 V B E (sat) Collector Current I C (A) 0.5 1 5 10 4 400 mA 4 3 150 mA 2 2 0.5 I B =50mA 1 1 V C E (sat) 0 0.03 0.05 0.1 0 0 0.2 0.4 0.6 0.8 1.0 1.2 0 0 1 2 3 4 Collector-Emitter Voltage V C E (V) Collector Current I C (A) Base-Emittor Voltage V B E (V) (V C E =4V) 50 θ j - a (˚C /W) h FE – I C Temperature Characteristics (Typical) 125˚C DC Cur rent Gain h F E t on •t stg • t f – I C Characteristics (Typical) t on• t s t g • t f ( µ s) 7 5 V C C 2 50V I C :I B 1 :I B 2 =1:0.15:–0.5 1 tf 0.5 t on 0.1 0.2 t s tg θ j-a – t Characteristics 4 25˚C –55˚C Transient Thermal Resistance Swi tchi ng T im e 1 10 0.5 0.3 5 0.02 0.05 0.1 0.5 1 5 0.5 1 5 1 10 Time t(ms) 100 1000 Collector Current I C (A) Collector Current I C (A) Safe Operating Area (Single Pulse) 20 10 5 Collecto r Curr ent I C (A) Collector Curr ent I C ( A) 10 0µ Reverse Bias Safe Operating Area 20 10 5 M aximum Power Dissip ation P C (W) 35 P c – T a Derating s 30 W ith In fin ite 1 0.5 1 0.5 Without Heatsink Natural Cooling L=3mH IB2=–1.0A Duty:less than 1% 2SC4518 100 500 20 he at si nk 10 0.1 0.05 0.03 10 Without Heatsink Natural Cooling 0.1 0.05 Without Heatsink 2SC4518A 1000 2 0 0 25 50 75 100 125 150 50 100 500 1000 0.03 50 Collector-Emitter Voltage V C E (V) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C) 114