2SC4546

2SC4546 Silicon NPN Triple Diffused Planar Transistor (High Voltage and Ultra-high Speed Switchihg Transistor) Application : Switching Regulator, Lighting Inverter and General Purpose 7(Pulse14) A IB 2 µA 400min V hFE VCE=4V, IC=3A 10 to 25 A VCE(sat) IC=3A, IB=0.6A 0.7max IC=3A, IB=0.6A 1.3max V 16.9±0.3 100max V 30(Tc=25°C) W VBE(sat) Tj 150 °C fT VCE=12V, IE=–0.5A 10typ MHz –55 to +150 °C COB VCB=10V, f=1MHz 55typ pF 3.9 PC 1.35±0.15 1.35±0.15 2.54 ■Typical Switching Characteristics (Common Emitter) 2 I B =50m A 1 1 0 2 3 0 0.02 0.05 0.1 0.5 1 5 0 10 m m t on •t stg • t f – I C Characteristics (Typical) 0.1 0.5 1 5 7 t s tg 1 0.5 tf t on 0.1 0.05 V C C 200V I C :I B1 :I B 2 =5:1:–2 0.02 0.2 0.5 5 10 10 0µ p) 0.5 0.3 1 10 10 P c – T a Derating ite he at si nk Co lle ctor Cu rren t I C ( A) fin Without Heatsink Natural Cooling L=3mH IB2=–0.5A Duty:less than 1% 20 In 0.5 ith Without Heatsink Natural Cooling 1 W 5 1 1000 30 s 5 100 Time t(ms) 20 20 Collector Cur rent I C (A) 1 1 Reverse Bias Safe Operating Area Safe Operating Area (Single Pulse) 1.0 4 Collector Current I C (A) Collector Current I C (A) 0.5 Transient Thermal Resistance t o n• t s t g• t f (µ s) 2 N 0.05 0.5 θ j-a – t Characteristics Ma xim um Powe r Dissipat io n P C (W) 5 0.02 Sw it ching Time ec o R 10 ot DC C urrent G ain h FE 25˚C 0 Base-Emittor Voltage V B E (V) (V C E =4V) –30˚C Tem 1 Collector Current I C (A) h FE – I C Temperature Characteristics (Typical) 125˚C 2 –30˚C (Case Temp) 4 Collector-Emitter Voltage V C E (V) 50 es ig 25˚C (Case Temp) 3 en 0 125˚C (Case Temp) 4 se 3 0.5 5 (Ca 200m A 6 ˚C 4 I C / I B =5 Const. 125 300 mA (V C E =4V) 7 1.0 ew 40 0m A 5 I C – V BE Temperature Characteristics (Typical) θ j- a ( ˚ C/W) Collector Current I C (A) Collector-Emitter Saturation Voltage V C E (s a t) (V ) 60 0m A 6 0.15max V CE ( sat ) – I C Characteristics (Typical) 800mA 1A 2max 0.5max Weight : Approx 2.0g a. Part No. b. Lot No. B C E Collector Current I C (A) I C – V CE Characteristics (Typical) 7 –1.2 0.6 tf (µs) D –5 10 tstg (µs) ton (µs) rN 3 67 IB2 (A) IB1 (A) fo 200 VBB2 (V) VBB1 (V) d IC (A) RL (Ω) 2.4±0.2 2.2±0.2 de VCC (V) 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 ns Tstg ø3.3±0.2 a b ) IC VEB=7V IC=25mA Temp V(BR)CEO 4.2±0.2 2.8 c0.5 (Case IEBO V 10.1±0.2 4.0±0.2 V 7 µA 0.8±0.2 400 VEBO 100max –30˚C VCEO VCB=600V mp) ICBO e Te V Unit (Cas 600 Ratings 25˚C VCBO External Dimensions FM20(TO220F) (Ta=25°C) Conditions ±0.2 Symbol Unit 8.4±0.2 ■Electrical Characteristics Ratings Symbol 13.0min ■Absolute maximum ratings (Ta=25°C) 10 Without Heatsink 2 0.1 10 50 100 Collector-Emitter Voltage V C E (V) 500 700 0.1 10 50 100 Collector-Emitter Voltage V C E (V) 500 700 0 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 115