2SC4546_01

2SC4546 Silicon NPN Triple Diffused Planar Transistor (High Voltage and Ultra-high Speed Switchihg Transistor) Application : Switching Regulator, Lighting Inverter and General Purpose sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Ratings 600 400 7 7(Pulse14) 2 30(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=600V VEB=7V IC=25mA VCE=4V, IC=3A IC=3A, IB=0.6A IC=3A, IB=0.6A VCE=12V, IE=–0.5A VCB=10V, f=1MHz Ratings 100max 100max 400min 10 to 25 0.7max 1.3max 10typ 55typ (Ta=25°C) Unit External Dimensions FM20(TO220F) 4.0±0.2 10.1±0.2 4.2±0.2 2.8 c0.5 µA V V V MHz pF 13.0min 16.9±0.3 8.4±0.2 µA 1.35±0.15 1.35±0.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.2±0.2 2.4±0.2 sTypical Switching Characteristics (Common Emitter) VCC (V) 200 RL (Ω) 67 IC (A) 3 VBB1 (V) 10 VBB2 (V) –5 IB1 (A) 0.6 IB2 (A) –1.2 ton (µs) 0.5max tstg (µs) 2max tf (µs) 0.15max 2.54 3.9 BCE I C – V CE Characteristics (Typical) 7 1A V CE ( sat ) – I C Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s a t) (V ) 1.0 I C / I B =5 Const. I C – V BE Temperature Characteristics (Typical) 7 (V C E =4V) 800mA 6 Collector Current I C (A) 60 0m A 6 Collector Current I C (A) 5 40 0m A 5 300 mA 4 200m A 4 0.5 125˚C (Case Temp) mp) e Te (Cas Tem 25˚C –30˚C (Case Temp) 0 0 1 2 3 4 0 0.02 0.05 0.1 0.5 1 5 10 0 0 0.5 Base-Emittor Voltage V B E (V) 125 1 1 –30˚C ˚C I B =50m A (Ca 25˚C (Case Temp) se 2 2 (Case Temp p) 3 3 ±0.2 0.8±0.2 a b ø3.3±0.2 Weight : Approx 2.0g a. Part No. b. Lot No. ) 1.0 Collector-Emitter Voltage V C E (V) Collector Current I C (A) (V C E =4V) 50 DC C urrent G ain h FE 2 θ j- a ( ˚ C/W) h FE – I C Temperature Characteristics (Typical) t o n• t s t g• t f ( µ s) 125˚C t on •t stg • t f – I C Characteristics (Typical) t s tg θ j-a – t Characteristics 4 1 0.5 tf t on 0.1 0.05 0.02 0.2 V C C 2 00V I C :I B1 :I B 2 =5:1:–2 0.5 1 5 Collector Current I C (A) 25˚C –30˚C Transient Thermal Resistance Sw it ching Time 1 10 0.5 0.3 5 0.02 0.05 0.1 0.5 1 5 7 1 10 Time t(ms) 100 1000 Collector Current I C (A) Safe Operating Area (Single Pulse) 20 10 5 Co lle ctor Cu rren t I C ( A) 10 Reverse Bias Safe Operating Area 20 10 30 P c – T a Derating s 5 Ma xim um Powe r Dissipat io n P C (W) 0µ W ith Collector Cur rent I C (A) 20 In fin ite he at si 1 1 Without Heatsink Natural Cooling L=3mH IB2=–0.5A Duty:less than 1% nk 0.5 Without Heatsink Natural Cooling 0.5 10 Without Heatsink 2 0.1 10 50 100 500 700 0.1 10 50 100 500 700 0 0 25 50 75 100 125 150 Collector-Emitter Voltage V C E (V) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C) 115