2SC4706

2SC4706 Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) µA VCEO 600 V IEBO VEB=7V 100max µA 7 V V(BR)CEO IC=10mA 600min V 14(Pulse28) A hFE VCE=4V, IC=7A 10 to 25 IB 7 A VCE(sat) IC=7A, IB=1.4A 0.5max PC 130(Tc=25°C) W VBE(sat) IC=7A, IB=1.4A 1.2max V Tj 150 °C fT VCE=12V, IE=–1.5A 6typ MHz –55to+150 °C COB VCB=10V, f=1MHz 160typ pF IB2 (A) ton (µs) tstg (µs) tf (µs) 250 35.7 7 10 –5 1.05 –3.5 1max 5max 0.7max I B =100mA 2 1 0 2 3 ew Collector-Emitter Voltage V C E (V) 0.05 0.1 0.5 1 5 0 0.2 0.4 0.6 Temp (Case 0.8 1.0 1.2 Base-Emittor Voltage V B E (V) m θ j-a – t Characteristics t on •t stg • t f – I C Characteristics (Typical) m ) ) 0 10 Collector Current I C (A) h FE – I C Temperature Characteristics (Typical) mp) emp 2 V C E (sat) 0 0.02 4 4 en 0 6 –55˚C 200mA 4 V B E (sat) 8 eT 6 1 Cas 400m A ˚C ( 8 10 125 600mA Collector Current I C (A) 10 (V CE =4V) 12 rN 800mA I C /I B =5 Const. fo 12 Weight : Approx 6.0g a. Part No. b. Lot No. 14 2 d 1.2 A de A 1.4 E I C – V BE Temperature Characteristics (Typical) V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s a t) (V ) Base-Emitter Saturation Voltage V B E (s at) (V) 6 1. C es ig IB1 (A) D VBB2 (V) 0.65 +0.2 -0.1 5.45±0.1 B VBB1 (V) 14 Collector Current I C (A) 5.45±0.1 IC (A) I C – V CE Characteristics (Typical) 2 3 1.05 +0.2 -0.1 ■Typical Switching Characteristics (Common Emitter) RL (Ω) ø3.2±0.1 b V VCC (V) 2.0±0.1 e Te Tstg a 4.8±0.2 (Cas IC 25˚C VEBO 15.6±0.4 9.6 1.8 100max 5.0±0.2 Unit VCB=800V ns Ratings ICBO 2.0 Conditions V 4.0 Unit 900 19.9±0.3 Ratings VCBO Symbol External Dimensions MT-100(TO3P) (Ta=25°C) 4.0max Symbol ■Electrical Characteristics 20.0min ■Absolute maximum ratings (Ta=25°C) Application : Switching Regulator and General Purpose ec o 25˚C R –55˚C 10 0.1 0.5 1 5 10 14 5 V C C 250V I C :I B1 :–I B2 =10:1.5:5 t on tf 0.1 0.2 0.5 10 0µ 14 P c – T a Derating 130 s 500 Collector-Emitter Voltage V C E (V) 1000 Collector Curr ent I C (A) nk 100 si 0.1 50 at Collector-Emitter Voltage V C E (V) 1000 he 500 ite 100 fin 50 0.5 Without Heatsink Natural Cooling L=3mH IB2=–1.0A Duty:less than 1% In Without Heatsink Natural Cooling 1 ith 1 5 100 W 10 10 Collector Cur rent I C (A) 10 50 50 118 5 Reverse Bias Safe Operating Area Safe Operating Area (Single Pulse) 0.1 10 1 Collector Current I C (A) Collector Current I C (A) 0.5 t s tg 1 0.5 N 0.05 8 Ma xim um Powe r Dissipat io n P C (W) 5 0.02 ot DC C urrent G ain h FE 125˚C Sw it ching Time 50 t o n• t s t g• t f (µ s) (V C E =4V) 50 3.5 0 Without Heatsink 0 25 50 75 100 125 Ambient Temperature Ta(˚C) 150