2SC4883

2SC4883/4883A Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1859/A) Application : Audio Output Driver and TV Velocity-modulation ■Absolute maximum ratings (Ta=25°C) (Ta=25°C) IC 2 A V(BR)CEO 180min 150min IC=10mA IB 1 A hFE VCE=10V, IC=0.7A PC 20(Tc=25°C) W VCE(sat) IC=0.7A, IB=70mA 1.0max Tj 150 °C fT VCE=12V, IE=–0.7A 120typ –55 to +150 °C COB VCB=10V, f=1MHz 30typ Tstg V µA 10max VEB=6V V V MHz pF 1.35±0.15 1.35±0.15 VBB2 (V) IB1 (mA) IB2 (mA) ton (µs) tstg (µs) tf (µs) 20 20 1 10 –5 100 –100 0.5typ 1.5typ 0.5typ 2 0 4 6 8 ew 0.5A 0 10 2 5 10 50 Collector-Emitter Voltage V C E (V) 100 500 m m (V C E =4V) 0.1 1 DC Curr ent Gain h FE ec o 0.5 25˚C 100 –55˚C 50 30 0.01 2 N 0.05 125˚C Transient Thermal Resistance 40 0.01 Collector Current I C (A) 0.05 ) emp eT 1.0 0.1 1 0.5 2 7 5 1 1 10 100 1000 2000 Time t(ms) Collector Current I C (A) f T – I E Characteristics (Typical) Safe Operating Area (Single Pulse) P c – T a Derating (V C E =12V) 20 5 5 10 50 100 Collector-Emitter Voltage V C E (V) 2 200 Collect or Cur ren t I C (A) nk 1 si –2 10 at Emitter Current I E (A) –1 he 1 0.01 –0.1 ite 20 fin Without Heatsink Natural Cooling 1.2SC4883 2.2SC4883A 0.5 In 0.1 ith 0.5 W 40 s 60 s 80 C 0m 100 ms D 1 10 Typ 120 0 –0.01 1m 10 140 Ma xim um Powe r Dissipat io n P C (W) 160 Cut-o ff Fr equ ency f T (M H Z ) DC Curr ent Gain h FE R ot 50 0.5 θ j-a – t Characteristics h FE – I C Temperature Characteristics (Typical) 300 100 0 Base-Emittor Voltage V B E (V) (V C E =4V) Typ 0 1000 Base Current I B (mA) h FE – I C Characteristics (Typical) 300 Cas ˚C ( I C =2A 1A θ j- a ( ˚ C/W) 0 1 1 125 I B =5mA 2 Collector Current I C (A) 1 rN A fo 10m d A en Collector Current I C (A) 15m (V C E =4V) 2 3 de A B C E Weight : Approx 2.0g a. Part No. b. Lot No. I C – V BE Temperature Characteristics (Typical) V CE ( sat ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (sa t) (V ) 30m es ig VBB1 (V) D IC (A) 2 2.4±0.2 2.2±0.2 RL (Ω) 60mA 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.54 VCC (V) 100mA 4.0±0.2 60 to 240 ■Typical Switching Characteristics (Common Emitter) I C – V CE Characteristics (Typical) ø3.3±0.2 a b Temp) IEBO (Case V –55˚C 6 180 150 VCB= VEBO 0.8±0.2 ICBO ±0.2 V mp) 180 3.9 150 4.2±0.2 2.8 c0.5 ns VCEO 10.1±0.2 µA 10max e Te V (Cas 180 External Dimensions FM20(TO220F) Unit 25˚C 150 Ratings 2SC4883 2SC4883A Conditions 8.4±0.2 VCBO Symbol 16.9±0.3 2SC4883 2SC4883A Unit 13.0min Ratings Symbol ■Electrical Characteristics 2 0 Without Heatsink 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 119