2SC4886_01

LAPT 2SC4886 Application : Audio and General Purpose (Ta=25°C) Ratings 100max 100max 150min 50min∗ 2.0max 60typ 200typ V MHz 16.2 Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1860) sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Ratings 150 150 5 14 3 80(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB ∗hFE Rank Conditions VCB=150V VEB=5V IC=25mA VCE=4V, IC=5A IC=5A, IB=500mA VCE=12V, IE=–2A VCB=10V, f=1MHz External Dimensions FM100(TO3PF) 0.8±0.2 15.6±0.2 5.5±0.2 3.45 ±0.2 5.5 ø3.3±0.2 1.6 Unit µA V 23.0±0.3 9.5±0.2 µA a b pF 1.75 2.15 1.05 +0.2 -0.1 5.45±0.1 1.5 4.4 5.45±0.1 1.5 0.65 +0.2 -0.1 3.3 0.8 O(50 to 100), P(70 to 140), Y(90 to 180) sTypical Switching Characteristics (Common Emitter) VCC (V) 60 RL (Ω) 12 IC (A) 5 VBB1 (V) 10 VBB2 (V) –5 IB1 (A) 0.5 IB2 (A) –0.5 ton (µs) 0.26typ tstg (µs) 1.5typ tf (µs) 0.35typ 3.35 B C E Weight : Approx 6.5g a. Part No. b. Lot No. I C – V CE Characteristics (Typical) 0m 400m A A 300m V CE ( sat ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) 3 I C – V BE Temperature Characteristics (Typical) 14 (V C E =4V) 14 75 A A 0m 60 0mA 50 200m A A Collector Current I C (A) Collector Current I C (A) 10 150m 10 2 10 0m A em 5 eT 1 as 12 ˚C 5A 0 0 0.2 0.4 0.6 0.8 1.0 0 0 0 0 1 2 3 4 –30 25 1 Base-Emittor Voltage V B E (V) ˚C I B =20mA 5˚C I C =10A (Ca (C se Tem 50m A 5 p) p) 3.0 2 Collector-Emitter Voltage V C E (V) Base Current I B (A) h FE – I C Characteristics (Typical) (V C E =4V) 200 DC Curr ent Gain h F E h FE – I C Temperature Characteristics (Typical) (V C E =4V) 200 125˚C DC Cur rent Gain h FE θ j - a ( ˚ C/W) θ j-a – t Characteristics 3 100 Typ 100 Transient Thermal Resistance 25˚C –30˚C 1 0.5 50 50 20 0.02 0.1 0.5 1 5 10 14 20 0.02 0.1 0.5 1 5 10 14 0.1 1 10 100 Time t(ms) 1000 2000 Collector Current I C (A) Collector Current I C (A) f T – I E Characteristics (Typical) (V C E =12V) 80 40 Safe Operating Area (Single Pulse) 80 1m s P c – T a Derating Cut-o ff F requ ency f T (MH Z ) Typ 60 Co lle ctor Cu rre nt I C (A) 10 5 10 m DC 0m s s M aximum Power Dissipa ti on P C (W) 10 60 W ith In fin ite he 40 40 at si 1 0.5 Without Heatsink Natural Cooling 0.1 nk 20 20 Without Heatsink 5 10 50 100 200 150 3.5 0 0 25 50 75 100 125 150 0 –0.02 –0.1 –1 –10 0.05 2 Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C) 120