2SC5071

2SC5071 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) 100max µA V IEBO VEB=10V 100max µA V V(BR)CEO IC=25mA 400min A hFE VCE=4V, IC=7A 10 to 30 IB 4 A VCE(sat) IC=7A, IB=1.4A 0.5max PC 100(Tc=25°C) W VBE(sat) IC=7A, IB=1.4A 1.3max V Tj 150 °C fT VCE=12V, IE=–1A 10typ MHz –55 to +150 °C COB VCB=10V, f=1MHz 105typ pF a ø3.2±0.1 b V 2 3 1.05 +0.2 -0.1 5.45±0.1 5.45±0.1 tf (µs) –5 0.7 –1.4 1.0max 3.0max 0.5max V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) (I C /I B =5) 2 0 1 2 3 ew 12 5˚ 0.5 Collector-Emitter Voltage V C E (V) 1 5 0.05 0.1 m m 0.5 1 5 10 12 1 0.5 tf t on 0.1 0.5 1 10 12 0µ 0.5 0.3 10 P c – T a Derating 100 Collector-Emitter Voltage V C E (V) 500 Collector Curr ent I C (A) nk 100 si 50 50 at 10 he 0.1 5 Without Heatsink Natural Cooling L=3mH I B2 =1.0A Dut y:less than 1% ite 0.5 fin 500 1 In Without Heatsink Natural Cooling 5 ith 1 Collector-Emitter Voltage V C E (V) 1000 W 5 100 100 Time t(ms) 10 50 1 s 10 10 ) 1 M aximum Power Dissipa ti on P C (W) 10 mp) 3 30 30 Co lle ctor Cu rren t I C (A) 5 1.0 θ j-a – t Characteristics Reverse Bias Safe Operating Area Safe Operating Area (Single Pulse) 0.1 5 0.5 Collector Current I C (A) Collector Current I C (A) 0.5 t s tg V C C 200V I C :I B1 :I B2 =10:1:–2 Transient Thermal Resistance t on• t s tg • t f (µs) 5 N 8 0.02 Swi tchi ng T im e 10 ot R –30˚C 0 Base-Emittor Voltage V B E (V) t on •t stg • t f – I C Characteristics (Typical) ec o DC Cur rent Gain h F E 25˚C 0 10 (V C E =4V) 125˚C 2 C 5˚ –5 Collector Current I C (A) h FE – I C Characteristics (Typical) 40 ) C V C E (sat) 0.05 0.1 4 e Te (C (Cas 125˚C 6 mp ) emp ase T 8 Te e Temp) 25˚C (Cas 0 0.02 4 Temp) en 0 –55˚C (Case –55˚C I B =100mA 1 se 200mA 4 rN 6 10 V B E (sat) as e 25 Temp ) ˚C 400m A (V CE =4V) (C 8 I C – V BE Temperature Characteristics (Typical) fo Collector Current I C (A) 60 0m A d 80 0m A 10 Weight : Approx 6.0g a. Part No. b. Lot No. 12 de Collector-Emitter Saturation Voltage V C E (s at) (V ) Base-Emitter Saturation Voltage V B E (s at) (V) 1A E (Ca I C – V CE Characteristics (Typical) 12 C 5˚C 10 tstg (µs) 12 7 ton (µs) D 28.5 VBB2 (V) IB2 (A) Collector Current I C (A) VBB1 (V) IB1 (A) θ j - a (˚ C/W) 200 RL (Ω) IC (A) es ig B VCC (V) 1.4 ns ■Typical Switching Characteristics (Common Emitter) 0.65 +0.2 -0.1 emp Tstg 19.9±0.3 V 12(Pulse24) se T 10 IC VEBO 2.0±0.1 (Ca 400 4.8±0.2 25˚C VCEO 15.6±0.4 9.6 1.8 VCB=500V V 5.0±0.2 ICBO 500 2.0 Unit VCBO External Dimensions MT-100(TO3P) (Ta=25°C) 4.0 Symbol Ratings Unit 4.0max ■Electrical Characteristics Conditions Ratings Symbol 20.0min ■Absolute maximum ratings (Ta=25°C) Application : Switching Regulator and General Purpose 3.5 0 Without Heatsink 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 125