2SC5130

2SC5130 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) Ratings Unit VCB=500V 100max µA VEB=10V 10max µA IC=25mA 400min ICBO VCEO 400 V IEBO VEBO 10 V V(BR)CEO 5(Pulse10) A hFE VCE=4V, IC=1.5A 10 to 30 10.1±0.2 V A VCE(sat) IC=1.5A, IB=0.3A 0.5max 30(Tc=25°C) W VBE(sat) IC=1.5A, IB=0.3A 1.3max V Tj 150 °C fT VCE=12V, IE=–0.3A 20typ MHz –55 to +150 °C COB VCB=10V, f=1MHz 30typ pF 1.35±0.15 1.35±0.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.54 2.2±0.2 RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) ton (µs) tstg (µs) tf (µs) 200 133 1.5 10 –5 0.15 –0.3 1max 2max 0.3max 2 3 0 0.01 4 D ew Collector-Emitter Voltage V C E (V) 0.5 1 m m t on •t stg • t f – I C Characteristics (Typical) 5 0.01 0.1 0.5 1 5 t on• t s t g • t f (µ s) t s tg 1 0.5 t on tf V C C 200V I C :I B 1 :–I B2 =10:1:2 0.1 0.1 0.5 N 0.05 2 1 3 ) Temp –55˚C (Case e Te em 1 10 100 1000 P c – T a Derating fin ite he at si nk Without Heatsink Natural Cooling L=3mH –IB2=0.5A Duty:less than 1% 20 In Without Heatsink Natural Cooling 1 0.5 mp) p) 0.5 0.4 ith 0.5 1.4 W 1 1.2 30 5 s 1.0 Time t(ms) 10 µs 0.8 1 Maximu m Power Dissi pation P C ( W) 50 0µ Co lle ctor Cu rre nt I C ( A) 10 0.6 5 20 20 5 0.4 θ j-a – t Characteristics Reverse Bias Safe Operating Area Safe Operating Area (Single Pulse) 10 0.2 Collector Current I C (A) Collector Current I C (A) Collecto r Cur ren t I C (A) Transient Thermal Resistance 10 Swi tchi ng T im e ec o R –55˚C ot DC C urrent G ain h FE 25˚C 0 Base-Emittor Voltage V B E (V) (V C E =4V) 125˚C eT 0 5 Collector Current I C (A) h FE – I C Characteristics (Typical) 50 Cas –55˚C (Case Temp) 0.05 0.1 ˚C ( 1 θ j - a (˚ C/W) 1 0 25˚C (Case Temp) en 0 2 25˚C I B =50mA 1 125˚C (Case Temp) 0.5 3 125 2 1.0 4 Collector Current I C (A) 15 0m A rN Collector Current I C (A) 30 0m A 3 I C / I B =5 Const. fo 50 0m A 4 (V C E =4V) 5 1.5 d mA de 800 B C E I C – V BE Temperature Characteristics (Typical) VCE(sat)–IC Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) 5 Weight : Approx 2.0g a. Part No. b. Lot No. es ig VCC (V) I C – V CE Characteristics (Typical) 2.4±0.2 ns ■Typical Switching Characteristics (Common Emitter) (Cas Tstg 3.9 2 PC ø3.3±0.2 a b V IB 4.2±0.2 2.8 c0.5 4.0±0.2 V 0.8±0.2 Unit 600 ±0.2 Conditions Ratings VCBO IC External Dimensions FM20(TO220F) 8.4±0.2 Symbol Application : Switching Regulator and General Purpose (Ta=25°C) 16.9±0.3 Symbol ■Electrical Characteristics 13.0min ■Absolute maximum ratings (Ta=25°C) 10 Without Heatsink 2 0.1 5 10 50 100 Collector-Emitter Voltage V C E (V) 130 500 0.1 5 10 50 100 Collector-Emitter Voltage V C E (V) 500 0 0 25 50 75 100 125 Ambient Temperature Ta(˚C) 150