2SC5130_01

2SC5130 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Ratings 600 400 10 5(Pulse10) 2 30(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C Application : Switching Regulator and General Purpose External Dimensions FM20(TO220F) 4.0±0.2 10.1±0.2 4.2±0.2 2.8 c0.5 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=500V VEB=10V IC=25mA VCE=4V, IC=1.5A IC=1.5A, IB=0.3A IC=1.5A, IB=0.3A VCE=12V, IE=–0.3A VCB=10V, f=1MHz 100max 10max 400min 10 to 30 0.5max 1.3max 20typ 30typ (Ta=25°C) Ratings Unit µA 16.9±0.3 V V V 8.4±0.2 µA 13.0min MHz pF 1.35±0.15 1.35±0.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.2±0.2 2.4±0.2 2.54 sTypical Switching Characteristics (Common Emitter) VCC (V) 200 RL (Ω) 133 IC (A) 1.5 VBB1 (V) 10 VBB2 (V) –5 IB1 (A) 0.15 IB2 (A) –0.3 ton (µs) 1max tstg (µs) 2max tf (µs) 0.3max 3.9 BCE ±0.2 I C – V CE Characteristics (Typical) 800 mA VCE(sat)–IC Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) 1.5 I C / I B =5 Const. I C – V BE Temperature Characteristics (Typical) (V C E =4V) 5 5 50 0m A Collector Current I C (A) 30 0m A 1.0 3 Collector Current I C (A) 4 4 3 15 0m A 2 p) 0.8±0.2 a b ø3.3±0.2 Weight : Approx 2.0g a. Part No. b. Lot No. mp) e Te (Cas 0 0 1 2 3 4 0 0.01 –55˚C (Case Temp) 0.05 0.1 0.5 1 5 0 0 0.2 0.4 125 0.6 25˚C 1 0.8 –55˚C 1 ˚C ( I B =50mA 25˚C (Case Temp) (Case Cas 0.5 eT 125˚C (Case Temp) 2 Temp em ) 1.0 1.2 1.4 Collector-Emitter Voltage V C E (V) Collector Current I C (A) Base-Emittor Voltage V B E (V) (V C E =4V) 50 DC C urrent G ain h FE 2 θ j - a (˚ C/W) h FE – I C Characteristics (Typical) t on• t s t g • t f ( µ s) 125˚C 25˚C t on •t stg • t f – I C Characteristics (Typical) θ j-a – t Characteristics 5 1 Swi tchi ng T im e –55˚C 0.5 t on tf 0.1 0.1 V C C 2 00V I C :I B 1 :–I B2 =10:1:2 0.5 1 3 Transient Thermal Resistance t s tg 1 10 5 0.01 0.05 0.1 0.5 1 5 0.5 0.4 1 10 Time t(ms) 100 1000 Collector Current I C (A) Collector Current I C (A) Safe Operating Area (Single Pulse) 20 10 10 Reverse Bias Safe Operating Area 20 30 P c – T a Derating 5 Collecto r Cur ren t I C (A) 0µ Co lle ctor Cu rre nt I C ( A) s 5 Maximu m Power Dissi pation P C ( W) 50 µs 10 W ith 20 In fin ite he at si 1 0.5 1 0.5 Without Heatsink Natural Cooling L=3mH –IB2=0.5A Duty:less than 1% nk 10 Without Heatsink Natural Cooling Without Heatsink 2 0.1 5 10 50 100 500 Collector-Emitter Voltage V C E (V) 0.1 5 10 50 100 500 0 0 25 50 75 100 125 150 Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C) 130