2SC5287_01

2SC5287 Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Ratings 900 550 7 5(Pulse10) 2.5 80(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C Application : Switching Regulator and General Purpose (Ta=25°C) Ratings 100max 100max 550min 10 to 25 0.5max 1.2max 6typ 50typ V MHz pF 5.45±0.1 B C E 20.0min 4.0max sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=800V VEB=7V IC=10mA VCE=4V, IC=1.8A IC=1.8A, IB=0.36A IC=1.8A, IB=0.36A VCE=12V, IE=–0.35A VCB=10V, f=1MHz External Dimensions MT-100(TO3P) 5.0±0.2 15.6±0.4 9.6 2.0 1.8 4.8±0.2 2.0±0.1 Unit µA µA V 19.9±0.3 4.0 a b ø3.2±0.1 V 2 3 1.05 +0.2 -0.1 5.45±0.1 0.65 +0.2 -0.1 1.4 sTypical Switching Characteristics (Common Emitter) VCC (V) 250 RL (Ω) 139 IC (A) 1.8 VBB1 (V) 10 VBB2 (V) –5 IB1 (A) 0.27 IB2 (A) –0.9 ton (µs) 0.7max tstg (µs) 4.0max tf (µs) 0.5max Weight : Approx 6.0g a. Part No. b. Lot No. I C – V CE Characteristics (Typical) 5 0 70 mA 600mA V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) Base-Emitter Saturation Voltage V B E (s at) (V) 1.5 I C /I B =5 Const. I C – V BE Temperature Characteristics (Typical) (V CE =4V) 7 4 Collector Current I C (A) 400 mA 6 Collector Current I C (A) 0.5 1 57 5 250 mA 3 1.0 V B E (sat) 4 150 mA 2 3 0.5 I B =50mA 2 1 1 V C E (sat) 0 0.03 0.05 0.1 0 0 0.5 1.0 0 0 1 2 3 4 Collector-Emitter Voltage V C E (V) Collector Current I C (A) Base-Emittor Voltage V B E (V) (V C E =4V) 40 D C Cur r ent Gai n h F E θ j - a (˚ C/W) h FE – I C Characteristics (Typical) t on • t s t g • t f ( µ s) 125˚C 25˚C 6 5 t on •t stg • t f – I C Characteristics (Typical) θ j-a – t Characteristics 3 V C C 2 50V I C :I B1 :I B 2 =1:0.15:–0.5 1 0.5 t on 0.1 0.2 tf t s tg 10 Switching T im e –55˚C Transient Thermal Resistance 1 0.5 5 4 0.02 0.05 0.1 0.5 1 5 10 0.5 1 5 0.3 1 10 Time t(ms) 100 1000 Collector Current I C (A) Collector Current I C (A) Safe Operating Area (Single Pulse) 20 10 10 Reverse Bias Safe Operating Area 20 80 P c – T a Derating 50 0µ s 5 Collecto r Cur rent I C (A) 5 Collecto r Cur rent I C (A) Maxim um Power Dissi pation P C (W) µs 10 60 W ith In fin ite 1 0.5 1 0.5 Without Heatsink Natural Cooling IB2=–1.0A L=3mH Duty:less than 1% he 40 at si nk Without Heatsink Natural Cooling 0.1 0.05 0.03 10 50 100 500 20 0.1 0.05 0.03 50 Without Heatsink 100 500 1000 3.5 0 0 25 50 75 100 125 150 Collector-Emitter Voltage V C E (V) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C) 134