2SC5333

2SC5333 Silicon NPN Triple Diffused Planar Transistor sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC5333 300 300 6 2 0.2 35(Tc=25°C) 150 –55to+150 Unit V V V A A W °C °C 2.54 2.2±0.2 Application : Series Regulator, Switch, and General Purpose (Ta=25°C) 2SC5333 1.0max 1.0max 300min 30min 1.0max 10typ 75typ V MHz pF 13.0min sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB Conditions VCB=300V VEB=6V IC=25mA VCE=4V, IC=0.5A IC=1.0A, IB=0.2A VCE=12V, IE=–0.2A VCB=10V, f=1MHz External Dimensions FM20(TO220F) 4.0±0.2 10.1±0.2 4.2±0.2 2.8 c0.5 Unit mA V 16.9±0.3 8.4±0.2 mA 1.35±0.15 1.35±0.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.4±0.2 sTypical Switching Characteristics (Common Emitter) VCC (V) 100 RL (Ω) 100 IC (A) 1.0 VB2 (V) –5 IB1 (A) 0.1 IB2 (A) –0.2 ton (µs) 0.3typ tstg (µs) 4.0typ tf (µs) 1.0typ 3.9 BCE ±0.2 0.8±0.2 a b ø3.3±0.2 Weight : Approx 2.0g a. Type No. b. Lot No. I C – V CE Characteristics (Typical) 200 B= mA V CE ( sa t ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) 3 I C – V BE Temperature Characteristics (Typical) 2 (V CE =4V) 2 I Collector Current I C (A) 2 Collector Current I C (A) mp) e Te I B =2 0m 25˚C (C 125˚C 1 (Cas A /s to p I C =1A 0 0 0.1 0.2 2A 0.3 0 0 0.2 0.4 0.6 0.8 1.0 0 0 1 2 3 4 Collector-Emitter Voltage V C E (V) Base Current I B (A) Base-Emittor Voltage V B E (V) h FE – I C Characteristics (Typical) (V C E =4V) 200 DC Cur rent Gain h FE DC Cur rent Gain h FE h FE – I C Temperature Characteristics (Typical) (V C E =4V) 200 θ j - a (˚ C/W) θ j-a – t Characteristics 4 100 Typ 100 25˚C 50 50 –30 ˚C Transient Thermal Resistance 125 ˚C 1 0.5 0.3 10 3 10 100 Collector Current I C (mA) 1000 2000 10 3 5 10 50 100 500 1000 2000 1 10 Time t(ms) 100 –30˚C (C ase Tem ase Te p) 1 1 mp) 1000 Collector Current I C (mA) f T – I E Characteristics (Typical) (V C E =12V) 20 Safe Operating Area (Single Pulse) 35 P c – T a Derating Cu t-of f Fr eque ncy f T (MH Z ) Typ Ma ximum Po we r Dissipatio n P C ( W) 30 W ith In fin ite 20 he 10 at si nk 10 Without Heatsink 0 –0.003 –0.01 –0.05 –0.1 Emitter Current I E (A) –0.5 –1 2 0 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 134