2SD1785

2SD1785 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1258) VCE=2V, IC=3A 2000min V 1 A VCE(sat) PC 30(Tc=25°C) W fT VCE=12V, IE=–0.1A 100typ MHz Tj 150 °C COB VCB=10V, f=1MHz 70typ pF –55 to +150 °C 1.5max 0 .5 m 4 A 0 .4 m A 2 I B =0.3mA 0 0 2 4 4A 2A 1 0 6 0.3 1 5 10 50 m m (V C E =2V) 5000 0.03 0.5 0.1 1 5 12 5˚C ˚C Transient Thermal Resistance R 100 DC C urrent G ain h FE ec o p ot D C Cur r ent Gai n h F E 500 0.4 1 25 1000 500 –3 0˚ C 100 50 30 0.03 0.05 0.1 10 N Collector Current I C (A) 0.5 1 5 10 5 1 0.5 1 10 100 1000 Time t(ms) Collector Current I C (A) f T – I E Characteristics (Typical) 2 θ j-a – t Characteristics h FE – I C Temperature Characteristics (Typical) 10000 Ty 1000 0 100 Base-Emittor Voltage V B E (V) (V C E =2V) 5000 2 Base Current I B (mA) h FE – I C Characteristics (Typical) 10000 4 en Collector-Emi tter Voltage V C E (V) es ig I C =6 A mp) A 6 ) 0 .7 m 2 mp 1mA Te 6 A (V CE =2V) 8 se 1 .5 m 3 (Ca 2mA A 5˚C 3m ew A θ j- a ( ˚C/W) 5m Collector-Emitter Saturation Voltage V C E (s at) (V ) A m Collector Current I C (A) 20 1 A I C – V BE Temperature Characteristics (Typical) V CE ( sa t ) – I B Characteristics (Typical) 8 0m 1.5typ 5.5typ 12 I C – V CE Characteristics (Typical) 0.5typ –3 3 D –1.5 Weight : Approx 2.0g a. Part No. b. Lot No. B C E Collector Current I C (A) 10 tf (µs) tstg (µs) rN 3 ton (µs) IB2 (mA) IB1 (mA) VBB2 (V) fo 10 30 VBB1 (V) d IC (A) 2.4±0.2 2.2±0.2 de RL (Ω) 1.35±0.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.54 ■Typical Switching Characteristics (Common Emitter) VCC (V) 1.35±0.15 e Te Tstg ø3.3±0.2 a b V IB IC=2A, IB=3mA 4.0±0.2 hFE 0.8±0.2 A mA 120min 4.2±0.2 2.8 c0.5 ±0.2 6(Pulse10) IC 10max VEB=6V IC=10mA 10.1±0.2 ) V(BR)CEO µA (Cas IEBO V 10max 3.9 V 6 Unit VCB=120V ns 120 VEBO Conditions emp VCEO Symbol –30˚C ICBO se T V (Ca Unit 120 25˚C Ratings External Dimensions FM20(TO220F) (Ta=25°C) Ratings 8.4±0.2 ■Electrical Characteristics VCBO (2.5kΩ)(200Ω) E Application : Driver for Solenoid, Relay and Motor, Series Regulator, and General Purpose 16.9±0.3 ■Absolute maximum ratings (Ta=25°C) C B 13.0min Darlington Symbol Equivalent circuit Safe Operating Area (Single Pulse) P c – T a Derating (V C E =12V) he at si nk Collector Curr ent I C (A) ite 0.1 fin Without Heatsink Natural Cooling 20 In 0.5 ith 1 W ms C s 10 50 D 1m 5 Maxim um Power Dissip ation P C (W) 10 Typ 100 Cut- off F req uency f T (MH Z ) 30 20 120 10 Without Heatsink 2 0 –0.05 –0.1 –0.5 –1 Emitter Current I E (A) 138 –5 –8 0.05 3 5 10 50 100 Collector-Emitter Voltage V C E (V) 200 0 0 25 50 75 100 125 Ambient Temperature Ta(˚C) 150