2SD1796

2SD1796 Built-in Avalanche Diode for Surge Absorbing Darlington Silicon NPN Triple Diffused Planar Transistor IC 4 A hFE 10max mA VEB=6V IC=10mA 60±10 VCE=4V, IC=3A 2000min V 0.5 A VCE(sat) IC=3A, IB=10mA 1.5max V PC 25(Tc=25°C) W fT VCE=12V, IE=–0.2A 60typ MHz Tj 150 °C COB VCB=10V, f=1MHz 45 typ pF –55 to +150 °C 1.35±0.15 1.35±0.15 0 1 2 3 I C= 2 A I C =1 A 1 0 0.2 4 Collector-Emitter Voltage V C E (V) 0.5 1 5 10 50 m m (V C E =4V) 100 50 0.1 0.5 5000 125 ˚C ˚C 25 0˚C –3 1000 500 100 1 50 0.05 4 0.1 0.5 N 0.05 10000 ns es ig Transient Thermal Resistance ec o 500 ot R 1000 DC Cur rent åGain h FE 20000 5000 p) 0 1 Collector Current I C (A) 1 4 5 1 V C B =10V I E =–2V 0.5 1 10 100 1000 Time t(ms) Collector Current I C (A) f T – I E Characteristics (Typical) 2 θ j-a – t Characteristics h FE – I C Temperature Characteristics (Typical) Typ Safe Operating Area (Single Pulse) P c – T a Derating (V C E =10V) 30 10 s m 10 100 s Typ 60 40 20 s Collector Cur rent I C (A) 0m 80 DC Natural Cooling Silicone Grease Heatsink: Aluminum in mm 1m 10 5 Ma xim um Powe r Dissipat io n P C (W) 120 Cut- off F req uency f T (M H Z ) D C Cur r ent åGai n h FE 0 100 Base-Emittor Voltage V B E (V) (V C E =4V) 10000 1 Base Current I B (mA) h FE – I C Characteristics (Typical) 20000 2 en 0 0.3mA 4A I C= 3 A θ j- a ( ˚ C/W) 1 I C= 3 e Tem 0.4 mA 2 2 (Cas 0. 5m A (V CE =2V) 4 125˚C 0 .6 m A 3 3 ew A Weight : Approx 2.0g a. Part No. b. Lot No. I C – V BE Temperature Characteristics (Typical) Collector Current I C (A) A 0 .8 m 1.5typ rN 1.0m 4.0typ B C E fo =2 A Collector-Emitter Saturation Voltage V C E (s at) (V ) Collector Current I C (A) IB 0m tf (µs) V CE ( sat ) – I B Characteristics (Typical) I C – V CE Characteristics (Typical) 4 1.0typ –10 10 tstg (µs) D –5 10 ton (µs) IB2 (mA) IB1 (mA) d 3 2.4±0.2 2.2±0.2 de 10 30 VBB2 (V) 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.54 ■Typical Switching Characteristics (Common Emitter) VBB1 (V) ø3.3±0.2 a b 13.0min IB 4.2±0.2 2.8 c0.5 p) V(BR)CEO 10.1±0.2 p) IEBO V µA ase Tem V 6 10max ase Tem 60±10 VEBO Unit VCB=50V 25˚C (C VCEO Conditions –30˚C (C ICBO 4.0±0.2 V 0.8±0.2 Unit 60±10 External Dimensions FM20(TO220F) (Ta=25°C) Ratings ±0.2 Ratings IC (A) (3 kΩ)(1 5 0 Ω) E 3.9 Symbol VCBO RL (Ω) B 8.4±0.2 ■Electrical Characteristics Symbol VCC (V) C Application : Driver for Solenoid, Relay and Motor and General Purpose 16.9±0.3 ■Absolute maximum ratings (Ta=25°C) Tstg Equivalent circuit 1 0.5 Without Heatsink Natural Cooling 0.1 20 W ith In 150x150x2 1 00x 1 0 10 0x 2 fin ite he at si nk 50x50x2 Without Heatsink 2 0 –0.01 0.05 –0.1 –1 Emitter Current I E (A) –4 3 5 10 50 Collector-Emitter Voltage V C E (V) 100 0 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 139