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2SD2014

2SD2014

  • 厂商:

    SANKEN(三垦)

  • 封装:

    SOT78

  • 描述:

    TRANS NPN DARL 80V 4A TO220F

  • 数据手册
  • 价格&库存
2SD2014 数据手册
Darlington 2SD2014 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=120V VEB=6V IC=10mA VCE=2V, IC=3A IC=3A, IB=3mA IC=3A, IB=3mA VCE=12V, IE=–0.1A VCB=10V, f=1MHz 2SD2014 10max 10max 80min 2000min 1.5max 2.0max 75typ 45typ V V 13.0min Equivalent circuit B C (3k Ω) (200 Ω) E Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1257) sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SD2014 120 80 6 4 0.5 25(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C Application : Driver for Solenoid, Relay and Motor, Series Regulator, and General Purpose (Ta=25°C) Unit External Dimensions FM20(TO220F) 4.0±0.2 10.1±0.2 4.2±0.2 2.8 c0.5 µA V 16.9±0.3 8.4±0.2 mA MHz pF 1.35±0.15 1.35±0.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.2±0.2 2.4±0.2 sTypical Switching Characteristics (Common Emitter) VCC (V) 30 RL (Ω) 10 IC (A) 3 VBB1 (V) 10 VBB2 (V) –5 IB1 (mA) 10 IB2 (mA) –10 ton (µs) 1.0typ tstg (µs) 4.0typ tf (µs) 1.5typ 2.54 3.9 BCE I C – V CE Characteristics (Typical) m 1.0 A 0 .8 m A V CE ( sat ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) 3 I C – V BE Temperature Characteristics (Typical) (V CE =4V) 4 4 0m A IB =2 Collector Current I C (A) 0. 5m A 2 Collector Current I C (A) 3 0 .6 m A 3 p) ±0.2 0.8±0.2 a b ø3.3±0.2 Weight : Approx 2.0g a. Type No. b. Lot No. p) ase Tem 25˚C (C 2A 1 3A (Cas I C =4 A 1 0.3mA 1 0 0 1 2 3 4 0 0.2 1 5 10 50 100 0 0 125˚C 1A 1 Base-Emittor Voltage V B E (V) –30˚C (C ase Tem 2 2 e Tem 0. 4m A p) 2 Collector-Emitter Voltage V C E (V) Base Current I B (mA) h FE – I C Characteristics (Typical) (V C E =4V) 20000 10000 DC Curr ent Gain h FE 5000 DC C urrent G ain h FE h FE – I C Temperature Characteristics (Typical) (V C E =4V) 20000 10000 5000 125 ˚C θ j- a ( ˚ C/W) θ j-a – t Characteristics 5 Typ 1000 500 1000 500 ˚C 25 0˚C –3 Transient Thermal Resistance 1 100 50 30 0.03 0.1 0.5 1 4 100 50 30 0.03 0.1 0.5 1 4 0.5 1 5 10 50 Time t(ms) 100 500 1000 Collector Current I C (A) Collector Current I C (A) f T – I E Characteristics (Typical) (V C E =10V) 120 10 5 Safe Operating Area (Single Pulse) 25 10 0m s P c – T a Derating Natural Cooling Silicone Grease Heatsink: Aluminum in mm 1m m s 30 100 Cut -off Fre quen cy f T ( MH Z ) Collector Cur rent I C (A) M aximu m Power Dissipa tion P C (W) 10 s 0µ s 20 DC 80 W ith In Typ 60 1 0.5 150x150x2 1 00x 1 0 10 0x fin ite he 2 at si nk 40 Without Heatsink Natural Cooling 0.1 0.05 50x50x2 20 Without Heatsink 2 0 0 –0.02 –0.05 –0.1 –0.5 –1 –4 3 5 10 50 100 0 25 50 75 100 125 150 Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C) 139
2SD2014 价格&库存

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