2SD2017

Darlington 2SD2017 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=300V VEB=20V IC=25mA VCE=2V, IC=2A IC=2A, IB=2mA IC=2A, IB=2mA VCE=12V, IE=–1A VCB=10V, f=1MHz 2SD2017 100max 10max 250min 2000min 1.5max 2.0max 20typ 65typ V V MHz pF 13.0min Equivalent circuit B C ( 4k Ω ) E Silicon NPN Triple Diffused Planar Transistor sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SD2017 300 250 20 6 1 35(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C Application : Driver for Solenoid, Relay and Motor and General Purpose (Ta=25°C) Unit External Dimensions FM20(TO220F) 4.0±0.2 10.1±0.2 4.2±0.2 2.8 c0.5 µA V 16.9±0.3 8.4±0.2 mA 1.35±0.15 1.35±0.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.2±0.2 2.4±0.2 sTypical Switching Characteristics (Common Emitter) VCC (V) 100 RL (Ω) 50 IC (A) 2 VBB1 (V) 10 VBB2 (V) –5 IB1 (mA) 5 IB2 (mA) –10 ton (µs) 0.6typ tstg (µs) 16.0typ tf (µs) 3.0typ 2.54 3.9 BCE I C – V CE Characteristics (Typical) 0m A V CE ( sat ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) 3 I C – V BE Temperature Characteristics (Typical) (V C E =2V) 6 6 4 m 20 A 8m A 4m A 5 Collector Current I C (A) 5 Collector Current I C (A) 2mA 4 1mA 2 4 3 p) (Ca se Tem ˚C 3 ±0.2 0.8±0.2 a b ø3.3±0.2 Weight : Approx 2.0g a. Type No. b. Lot No. I C =8A 1 I C =3A I C =1A 1 25˚C (Cas 2 I B = 0 .4 mA 2 1 0 0 1 2 3 4 5 6 0 0.2 0.5 1 5 10 50 100 500 1000 0 0 1 Base-Emittor Voltage V B E (V) –30˚C 125 e Te mp) (Case Temp ) 2 Collector-Emitter Voltage V C E (V) Base Current I B (mA) h FE – I C Characteristics (Typical) (V C E =2V) 10000 5000 DC Curr ent Gain h F E h FE – I C Temperature Characteristics (Typical) (V C E =2V) 10000 D C Cur r ent Gai n h F E 5000 θ j- a ( ˚ C/W) θ j-a – t Characteristics 5 Typ 25 ˚C 1000 500 1000 500 –3 0˚C Transient Thermal Resistance 0.5 1 56 125 ˚C 1 100 50 30 0.03 100 50 30 0.03 0.5 0.3 0.1 0.5 1 56 0.1 1 5 10 50 Time t(ms) 100 500 1000 Collector Current I C (A) Collector Current I C (A) f T – I E Characteristics (Typical) (V C E =12V) 30 20 10 Safe Operating Area (Single Pulse) 35 P c – T a Derating Natural Cooling Silicone Grease Heatsink: Aluminum in mm Typ Cut- off F req uency f T ( MH Z ) Collector Curr ent I C (A) 5 m D. s C (T 20 C= 25 C) Maximu m Power Dissi pation P C (W) 10 30 1m s W ith 1 0.5 20 In fin ite he 150x150x2 100x100x2 10 50x50x2 Without Heatsink at si 10 nk 0.1 0.05 0 –0.02 –0.05 –0.1 0.02 3 Without Heatsink Natural Cooling –0.5 –1 –5 –6 5 10 50 100 300 2 0 0 25 50 75 100 125 150 Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C) 142