2SD2081_01

Darlington 2SD2081 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=120V VEB=6V IC=10mA VCE=4V, IC=5A IC=5A, IB=5mA IC=5A, IB=5mA VCE=12V, IE=–0.5A VCB=10V, f=1MHz Ratings 10max 10max 120min 2000min 1.5max 2.0max 60typ 95typ V V MHz pF 13.0min Equivalent circuit B C (2k Ω) (200 Ω) E Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1259) sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Ratings 120 120 6 10(Pulse15) 1 30(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C Application : Driver for Solenoid, Motor and General Purpose (Ta=25°C) Unit External Dimensions FM20(TO220F) 4.0±0.2 10.1±0.2 4.2±0.2 2.8 c0.5 µA V 16.9±0.3 8.4±0.2 mA 1.35±0.15 1.35±0.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.2±0.2 2.4±0.2 2.54 3.9 BCE ±0.2 0.8±0.2 a b ø3.3±0.2 Weight : Approx 2.0g a. Part No. b. Lot No. I C – V CE Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) 15 50 V CE ( sat ) – I B Characteristics (Typical) 3 I C – V BE Temperature Characteristics (Typical) 10 (V C E =4V) 1 A 0m m 5mA A 3mA 8 2 Collector Current I C (A) Collector Current I C (A) 10 2m A 6 1mA mp) p) ase Tem 25˚C (C 2 I B =0.5mA 0 0 1 2 3 4 5 6 0 0.2 0.5 1 5 10 50 100 200 0 0 1 –30˚C (C 125˚C 1A (Cas 5 0. 7m A 1 5A ase Tem e Te 4 p) I C =10A 2 3 Collector-Emitter Voltage V C E (V) Base Current I B (mA) Base-Emittor Voltage V B E (V) h FE – I C Characteristics (Typical) (V C E =4V) 20000 10000 DC Cur rent Gain h F E 5000 h FE – I C Temperature Characteristics (Typical) (V C E =4V) 20000 10000 DC Cur rent Gain h F E 5000 θ j - a ( ˚C/W) θ j-a – t Characteristics 5 Typ 12 1000 500 5˚C 25 ˚C 0˚C 1000 500 Transient Thermal Resistance 1 –3 0.5 100 50 30 0.03 100 50 30 0.03 0.1 0.5 1 5 10 0.1 0.5 1 5 10 0.2 1 10 Time t(ms) 100 1000 Collector Current I C (A) Collector Current I C (A) f T – I E Characteristics (Typical) (V C E =12V) 120 30 Safe Operating Area (Single Pulse) 30 10 m P c – T a Derating Typ 100 Cut- off Fr equ ency f T ( MH Z ) Collector Curre nt I C (A) 10 5 1m s s Maximu m Power Dissipa tion P C (W) W ith 80 DC 20 In fin ite he 60 at 1 0.5 Without Heatsink Natural Cooling 0.1 si nk 40 10 20 Without Heatsink 2 5 10 50 100 200 0 0 –0.05 –0.1 –0.5 –1 –5 –10 0.05 3 0 25 50 75 100 125 150 Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C) 145