2SD2389

Equivalent circuit 2SD2389 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1559) V VCEO 150 VEBO IC Unit ICBO VCB=160V 100max µA V IEBO VEB=5V 100max µA 5 V V(BR)CEO IC=30mA 150min V 8 A hFE VCE=4V, IC=6A 5000min∗ IC=6A, IB=6mA 2.5max 19.9±0.3 Ratings a 4.8±0.2 2.0±0.1 ø3.2±0.1 b V IB 1 A VCE(sat) PC 80(Tc=25°C) W VBE(sat) IC=6A, IB=6mA 3.0max V Tj 150 °C fT VCE=12V, IE=–1A 80typ MHz –55 to +150 °C COB VCB=10V, f=1MHz 85typ pF Tstg 15.6±0.4 9.6 1.8 160 E External Dimensions MT-100(TO3P) (Ta=25°C) Conditions 5.0±0.2 VCBO Symbol 2.0 Unit 4.0 ■Electrical Characteristics (Ta=25°C) Ratings Symbol 2 4.0max ■Absolute maximum ratings (7 0 Ω) Application : Audio, Series Regulator and General Purpose 20.0min Darlington C B 3 1.05 +0.2 -0.1 0.65 +0.2 -0.1 ∗hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000) IC (A) VBB1 (V) VBB2 (V) IB1 (mA) IB2 (mA) ton (µs) tstg (µs) tf (µs) 60 10 6 10 –5 6 –6 0.6typ 10.0typ 0.9typ 4 0 6 Collector-Emitter Voltage V C E (V) ew 0.2 0.5 1 5 10 50 m (V C E =4V) 5000 –30˚C 1 5 500 0.2 8 0.5 N 0.5 25˚C 10000 1000 ot 1000 02 125˚C Transient Thermal Resistance R 5000 DC C urrent G ain h FE ec o Typ Collector Current I C (A) (Cas e Te e Te (Cas mp) mp) mp) e Te 1 2 1 5 θ j-a – t Characteristics 4 1 0.5 0.2 8 1 5 10 50 100 500 1000 2000 Time t(ms) Collector Current I C (A) f T – I E Characteristics (Typical) Safe Operating Area (Single Pulse) P c – T a Derating (V C E =12V) 120 80 20 m 10 Typ s 5 40 at si nk Collect or Cur ren t I C (A) he Without Heatsink Natural Cooling ite 0.1 20 fin 0.5 In 40 1 60 ith 60 C W D 80 s 0m 100 M aximum Power Dissipa ti on P C (W) 10 10 Cut- off F req uenc y f T (MH Z ) DC C urrent G ain h FE (V C E =4V) 50000 10000 0 Base-Emittor Voltage V B E (V) h FE – I C Temperature Characteristics (Typical) m h FE – I C Characteristics (Typical) 40000 0 100 200 Base Current I B (mA) θ j - a ( ˚ C/W) 2 0 2 en 0 I C =4A 1 4 –30˚C I B =0.3mA I C =6A 25˚C 2 I C =8A Cas 0.5mA 6 ˚C ( 4 2 125 0.8 mA Collector Current I C (A) 1.0m A 6 (V CE =4V) 8 3 rN 1. 3m A fo A d 1.5m de 5m 2. A 0m A 2. 10mA 1. Collector-Emitter Saturation Voltage V C E (sa t) (V ) Collector Current I C (A) 8 Weight : Approx 2.0g a. Part No. b. Lot No. I C – V BE Temperature Characteristics (Typical) V CE ( sat ) – I B Characteristics (Typical) A 8m 1.4 E D RL (Ω) C es ig B VCC (V) I C – V CE Characteristics (Typical) 5.45±0.1 ns 5.45±0.1 ■Typical Switching Characteristics (Common Emitter) 20 0.05 0 –0.02 –0.1 –1 Emitter Current I E (A) –8 0.03 3 Without Heatsink 5 10 50 100 Collector-Emitter Voltage V C E (V) 150 200 3.5 0 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 149