2SD2390

Equivalent circuit C Darlington 2SD2390 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=160V VEB=5V IC=30mA VCE=4V, IC=7A IC=7A, IB=7mA IC=7A, IB=7mA VCE=12V, IE=–2A VCB=10V, f=1MHz 2SD2390 100max 100max 150min 5000min∗ 2.5max 3.0max 55typ 95typ V V MHz pF 20.0min 4.0max 2 3 1.05 +0.2 -0.1 5.45±0.1 B C E 5.45±0.1 B (7 0 Ω ) E Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1560) sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SD2390 160 150 5 10 1 100(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C Application : Audio, Series Regulator and General Purpose (Ta=25°C) Unit 5.0±0.2 2.0 1.8 External Dimensions MT-100(TO3P) 15.6±0.4 9.6 4.8±0.2 2.0±0.1 µA µA 19.9±0.3 V 4.0 a b ø3.2±0.1 0.65 +0.2 -0.1 1.4 ∗hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000) sTypical Switching Characteristics (Common Emitter) VCC (V) 70 RL (Ω) 10 IC (A) 7 VBB1 (V) 10 VBB2 (V) –5 IB1 (mA) 7 IB2 (mA) –7 ton (µs) 0.5typ tstg (µs) 10.0typ tf (µs) 1.1typ Weight : Approx 2.0g a. Type No. b. Lot No. I C – V CE Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (sa t) (V ) 10 m A 2. 5m A V CE ( sat ) – I B Characteristics (Typical) 3 I C – V BE Temperature Characteristics (Typical) 10 (V CE =4V) 10 2m A 1. 5m A 8 Collector Current I C (A) 1.2 mA 1m A 8 Collector Current I C (A) 2 6 0.8mA 6 I C =10A I C =7A 1 I C =5A mp) e Te (Cas 25˚C –30˚C Tem 4 4 se I B =0.4mA 2 0 0 2 4 6 0 0.2 0.5 1 5 10 50 100 200 0 0 125 ˚C 2 1 (Cas (Ca e Te mp) 0.6mA p) 2 2.5 Collector-Emitter Voltage V C E (V) Base Current I B (mA) Base-Emittor Voltage V B E (V) h FE – I C Characteristics (Typical) (V C E =4V) 40000 D C Cur r ent Gai n h F E h FE – I C Temperature Characteristics (Typical) (V C E =4V) 70000 50000 125˚C θ j- a ( ˚ C/W) θ j-a – t Characteristics 3 Transient Thermal Resistance Typ 10000 5000 D C Cur r ent Gai n h F E 1 0.5 10000 5000 25˚C –30˚C 1000 1000 02 0.5 1 Collector Current I C (A) 5 10 500 0.2 0.5 1 Collector Current I C (A) 5 10 0.1 1 5 10 50 100 Time t(ms) 500 1000 2000 f T – I E Characteristics (Typical) (V C E =12V) 100 30 Safe Operating Area (Single Pulse) 100 10 P c – T a Derating 80 Cut- off F req uency f T (M H Z ) Collect or Cur ren t I C (A) 10 5 DC 10 0m Ma xim um Powe r Dissipat io n P C (W) m s W s ith In 60 Typ fin ite he 1 0.5 Without Heatsink Natural Cooling 0.1 50 at si nk 40 20 0 –0.02 –0.1 –1 Emitter Current I E (A) –10 0.05 3 5 10 50 100 200 3.5 0 Without Heatsink 0 25 50 75 100 125 150 Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C) 149