2SD2401

C Equivalent circuit 2SD2401 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1570) ■Electrical Characteristics Unit VCBO 160 V ICBO VCB=160V 100max µA VCEO 150 V IEBO VEB=5V 100max µA V Ratings Unit VEBO 5 V V(BR)CEO IC=30mA 150min IC 12 A hFE VCE=4V, IC=7A 5000min∗ IB 1 A VCE(sat) IC=7A, IB=7mA 2.5max V IC=7A, IB=7mA 3.0max V 24.4±0.2 150(Tc=25°C) W VBE(sat) Tj 150 °C fT VCE=12V, IE=–2A 55typ MHz –55 to +150 °C COB VCB=10V, f=1MHz 95typ pF 9 a b 2 3 ∗hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000) VBB1 (V) VBB2 (V) IB1 (mA) IB2 (mA) ton (µs) tstg (µs) tf (µs) 70 10 7 10 –5 7 –7 0.5typ 10.0typ 1.1typ 2 0 4 0 6 ew 0.2 0.5 1 5 Collector-Emitter Voltage V C E (V) 10 50 m m (V C E =4V) 5000 –30˚C Transient Thermal Resistance DC Cur rent Gain h F E ec o R ot 1 10000 25˚C 1000 5 600 0.2 10 12 0.5 N 0.5 125˚C Collector Current I C (A) mp) ˚C ( Cas e Te emp ) p) se T Tem (Ca 2 2.6 1 5 10 12 2 1 0.5 0.1 1 5 10 50 100 500 1000 2000 Time t(ms) Collector Current I C (A) f T – I E Characteristics (Typical) Safe Operating Area (Single Pulse) P c – T a Derating (V C E =12V) 30 80 10 160 s ite he 80 at si nk Without Heatsink Natural Cooling 20 fin 0.5 In 1 120 ith Maximu m Power Dissipa tion P C (W) 0m W 40 DC s Typ 60 10 5 m Collector Curr ent I C (A) 10 100 Cu t-of f Fr eque ncy f T (MH Z ) DC Cur rent Gain h F E Typ 1000 02 1 θ j-a – t Characteristics h FE – I C Temperature Characteristics (Typical) 70000 50000 5000 0 Base-Emittor Voltage V B E (V) (V C E =4V) 10000 0 100 200 Base Current I B (mA) h FE – I C Characteristics (Typical) 40000 se 2 en 0 4 –30 2 I C =5A 6 25˚C I B =0.4mA 1 I C =7A (Ca 0.6mA 4 I C =10A 8 ˚C 0.8mA θ j- a ( ˚C/W) 6 2 125 1.0 mA Collector Current I C (A) 1.2m A 8 (V C E =4V) 10 rN 1.5 mA fo A I C – V BE Temperature Characteristics (Typical) d 2 .0 m Weight : Approx 18.4g a. Part No. b. Lot No. 12 3 de mA 10 Collector Current I C (A) Collector-Emitter Saturation Voltage V C E (s at) (V ) A 10m 2.5 E es ig IC (A) C D RL (Ω) V CE ( sat ) – I B Characteristics (Typical) 3.0 +0.3 -0.1 5.45±0.1 ns 5.45±0.1 B VCC (V) I C – V CE Characteristics (Typical) 0.65 +0.2 -0.1 1.05 +0.2 -0.1 ■Typical Switching Characteristics (Common Emitter) 12 2.1 2-ø3.2±0.1 PC Tstg 6.0±0.2 36.4±0.3 7 Conditions 21.4±0.3 Symbol E External Dimensions MT-200 (Ta=25°C) Ratings Symbol 4.0max ■Absolute maximum ratings (Ta=25°C) (7 0 Ω ) Application : Audio, Series Regulator and General Purpose 20.0min Darlington B 40 0.1 0 –0.02 –0.1 –1 Emitter Current I E (A) –10 0.05 3 5 10 50 100 Collector-Emitter Voltage V C E (V) 150 200 5 0 Without Heatsink 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 151