2SD2401_01

Equivalent circuit C Darlington 2SD2401 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=160V VEB=5V IC=30mA VCE=4V, IC=7A IC=7A, IB=7mA IC=7A, IB=7mA VCE=12V, IE=–2A VCB=10V, f=1MHz Ratings 100max 100max 150min 5000min∗ 2.5max 3.0max 55typ 95typ V V MHz pF 20.0min 4.0max B (7 0 Ω ) E Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1570) sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Ratings 160 150 5 12 1 150(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C Application : Audio, Series Regulator and General Purpose (Ta=25°C) Unit External Dimensions MT-200 36.4±0.3 24.4±0.2 2-ø3.2±0.1 9 7 21.4±0.3 2.1 6.0±0.2 µA µA V a b 2 3 1.05 +0.2 -0.1 5.45±0.1 B C E 5.45±0.1 0.65 +0.2 -0.1 3.0 +0.3 -0.1 ∗hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000) sTypical Switching Characteristics (Common Emitter) VCC (V) 70 RL (Ω) 10 IC (A) 7 VBB1 (V) 10 VBB2 (V) –5 IB1 (mA) 7 IB2 (mA) –7 ton (µs) 0.5typ tstg (µs) 10.0typ tf (µs) 1.1typ Weight : Approx 18.4g a. Part No. b. Lot No. I C – V CE Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) 12 A 10m 2.5 mA V CE ( sat ) – I B Characteristics (Typical) 3 I C – V BE Temperature Characteristics (Typical) 12 (V C E =4V) 2 .0 m A 10 Collector Current I C (A) 1.5 mA 10 Collector Current I C (A) 8 1.2m A 2 8 1.0 mA 6 0.8mA I C =10A I C =7A 1 I C =5A 6 p) ) emp se T (Ca se 4 4 125 0 0 2 4 6 0 0.2 0.5 1 5 10 50 100 200 0 0 1 –30 2 2 25˚C ˚C ( ˚C I B =0.4mA Cas (Ca e Te 0.6mA Tem mp) 2 2.6 Collector-Emitter Voltage V C E (V) Base Current I B (mA) Base-Emittor Voltage V B E (V) h FE – I C Characteristics (Typical) (V C E =4V) 40000 DC Cur rent Gain h F E h FE – I C Temperature Characteristics (Typical) (V C E =4V) 70000 50000 125˚C θ j- a ( ˚C/W) θ j-a – t Characteristics 2 Transient Thermal Resistance Typ 10000 5000 DC Cur rent Gain h F E 1 10000 5000 25˚C –30˚C 0.5 1000 1000 02 0.5 1 Collector Current I C (A) 5 10 12 600 0.2 0.5 1 Collector Current I C (A) 5 10 12 0.1 1 5 10 50 100 500 1000 2000 Time t(ms) f T – I E Characteristics (Typical) (V C E =12V) 100 30 Safe Operating Area (Single Pulse) 160 10 m P c – T a Derating 80 Cu t-of f Fr eque ncy f T (MH Z ) Collector Curr ent I C (A) 10 5 DC 10 0m Maximu m Power Dissipa tion P C (W) s s 120 W ith In 60 Typ fin ite he 1 0.5 Without Heatsink Natural Cooling 0.1 80 at si nk 40 40 20 0 –0.02 –0.1 –1 Emitter Current I E (A) –10 0.05 3 5 10 50 100 150 200 5 0 Without Heatsink 0 25 50 75 100 125 150 Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C) 151