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2SD2438_01

2SD2438_01

  • 厂商:

    SANKEN(三垦)

  • 封装:

  • 描述:

    2SD2438_01 - Silicon NPN Triple Diffused Planar Transistor - Sanken electric

  • 数据手册
  • 价格&库存
2SD2438_01 数据手册
Equivalent circuit C Darlington sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Ratings 160 150 5 8 1 75(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C 2SD2438 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=160V VEB=5V IC=30mA VCE=4V, IC=6A IC=6A, IB=6mA IC=6A, IB=6mA VCE=12V, IE=–1A VCB=10V, f=1MHz Ratings 100max 100max 150min 5000min∗ 2.5max 3.0max 80typ 85typ V V MHz pF 16.2 B (7 0 Ω ) E Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1587) Application : Audio, Series Regulator and General Purpose (Ta=25°C) Unit External Dimensions FM100(TO3PF) 0.8±0.2 15.6±0.2 5.5±0.2 3.45 ±0.2 5.5 ø3.3±0.2 1.6 µA V 9.5±0.2 µA 23.0±0.3 a b 1.75 2.15 1.05 +0.2 -0.1 5.45±0.1 1.5 4.4 5.45±0.1 1.5 0.65 +0.2 -0.1 3.3 0.8 ∗hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000) sTypical Switching Characteristics (Common Emitter) VCC (V) 60 RL (Ω) 10 IC (A) 6 VBB1 (V) 10 VBB2 (V) –2 IB1 ( mA) 6 IB2 (mA) –6 ton (µs) 0.6typ tstg (µs) 10.0typ tf (µs) 0.9typ 3.35 B C E Weight : Approx 6.5g a. Part No. b. Lot No. I C – V CE Characteristics (Typical) 5m 2. A 0m A V CE ( sat ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (sa t) (V ) 3 I C – V BE Temperature Characteristics (Typical) 8 (V C E =4V) 10mA 8 2. 1. A 8m 1.5m A 1. 3m A Collector Current I C (A) 0.8 mA 2 4 I C =8A I C =6A 1 I C =4A Collector Current I C (A) 6 1.0m A 6 4 mp) e Te 0.5mA 125˚C 2 2 0 0 2 4 6 0 0.2 0.5 1 5 10 50 100 200 0 0 1 25˚C I B =0.3mA –30˚C (Case (Case (Cas Temp ) Temp ) 2 Collector-Emitter Voltage V C E (V) Base Current I B (mA) Base-Emittor Voltage V B E (V) (V C E =4V) 40000 DC C urrent G ain h FE DC C urrent G ain h FE 50000 125˚C (V C E =4V) θ j- a ( ˚C/W) h FE – I C Characteristics (Typical) h FE – I C Temperature Characteristics (Typical) θ j-a – t Characteristics 4 Typ 10000 5000 10000 5000 25˚C –30˚C Transient Thermal Resistance 1 0.5 1000 1000 02 0.5 1 Collector Current I C (A) 5 8 500 0.2 0.5 1 Collector Current I C (A) 5 8 0.2 1 5 10 50 100 Time t(ms) 500 1000 2000 f T – I E Characteristics (Typical) (V C E =12V) 120 20 Safe Operating Area (Single Pulse) 80 10 m P c – T a Derating 10 100 Cut- off F req uenc y f T (MH Z ) Typ Collect or Cur ren t I C (A) 80 5 DC 0m s M aximum Power Dissipa ti on P C (W) 10 60 60 1 0.5 Without Heatsink Natural Cooling 0.1 40 40 20 20 0 –0.02 –0.1 –1 –8 0.05 3 5 10 50 100 200 3.5 0 Without Heatsink 0 50 100 150 Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C) 152 3.0 2.5 s W ith In fin ite he at si nk
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