Equivalent circuit
C
Darlington
2SD2561
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=150V VEB=5V IC=30mA VCE=4V, IC=10A IC=10A, IB=10mA IC=10A, IB=10mA VCE=12V, IE=–2A VCB=10V, f=1MHz 2SD2561 100max 100max 150min 5000min∗ 2.5max 3.0max 70typ 120typ V V MHz pF
20.0min 4.0max 2 3
B
(7 0 Ω )
E
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1648) sAbsolute maximum ratings (Ta=25°C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SD2561 150 150 5 17 1 200(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C
Application : Audio, Series Regulator and General Purpose
(Ta=25°C) Unit
External Dimensions MT-200
36.4±0.3 24.4±0.2 2-ø3.2±0.1 9 7 21.4±0.3 2.1 6.0±0.2
µA µA
V
a b
1.05 +0.2 -0.1 5.45±0.1 B C E 5.45±0.1
0.65 +0.2 -0.1 3.0 +0.3 -0.1
∗hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000)
sTypical Switching Characteristics (Common Emitter)
VCC (V) 40 RL (Ω) 4 IC (A) 10 VBB1 (V) 10 VBB2 (V) –5 IB1 (mA) 10 IB2 (mA) –10 ton (µs) 0.8typ tstg (µs) 4.0typ tf (µs) 1.2typ
Weight : Approx 18.4g a. Type No. b. Lot No.
I C – V CE Characteristics (Typical)
Collector-Emitter Saturation Voltage V C E (s at) (V) 17
50mA
V CE ( sa t ) – I B Characteristics (Typical)
3
I C – V BE Temperature Characteristics (Typical)
17 15 (V CE =4V)
10mA
A 2m
3m
1 .5 m A
15
A
1. 0m A
Collector Current I C (A)
0. 8m A
2
10
Collector Current I C (A)
10
mp) e Te (Cas 25˚C
p) Tem
I C =.15A I C =.10A 1 I C =.5A
(Ca
˚C
5
I B =0.3mA
5
0
0
2
4
6
0 0.2
0.5
1
5
10
50
100 200
0
0
1
–30˚C
125
(Cas
e Te
se
mp)
0.5mA
2
2.6
Collector-Emitter Voltage V C E (V)
Base Current I B (mA)
Base-Emittor Voltage V B E (V)
(V C E =4V) 50000 DC C urrent G ain h FE DC Curr ent Gain h FE 50000
1 ˚C 25
(V C E =4V)
θ j- a ( ˚C/W)
h FE – I C Characteristics (Typical)
h FE – I C Temperature Characteristics (Typical)
θ j-a – t Characteristics
2
Typ
10000 5000
Transient Thermal Resistance
1
10000 5000
25
˚C
0.5
–30
˚C
1000 500 02 0.5 1 Collector Current I C (A) 5 10 17
1000 500 02 0.5 1 Collector Current I C (A) 5 10 17
0.1
1
10
100 Time t(ms)
1000 2000
f T – I E Characteristics (Typical)
(V C E =12V) 80
Safe Operating Area (Single Pulse)
200
P c – T a Derating
Maxim um Power Dissip ation P C (W)
160
W ith
Cu t-off Fr eque ncy f T (MH Z )
60
In fin
120
ite he
40
at si nk
80
20
40 Without Heatsink 0 25 50 75 100 125 150
0 –0.02
–0.1
–1 Emitter Current I E (A)
–10
5 0
Ambient Temperature Ta(˚C)
159
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