2SD2641

Equivalent circuit C Darlington sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Ratings 110 110 5 6 1 60(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C 2SD2641 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=110V VEB=5V IC=30mA VCE=4V, IC=5A IC=5A, IB=5mA IC=5A, IB=5mA VCE=12V, IE=–2A VCB=10V, f=1MHz Ratings 100max 100max 110min 5000min∗ 2.5max 3.0max 60typ 55typ V V MHz pF 20.0min 4.0max 3 1.05 +0.2 -0.1 5.45±0.1 B C E 5.45±0.1 B (7 0 Ω ) E Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1685) Application : Audio, Series Regulator and General Purpose (Ta=25°C) Unit 5.0±0.2 External Dimensions MT-100(TO3P) 15.6±0.4 9.6 2.0 1.8 4.8±0.2 2.0±0.1 µA µA 19.9±0.3 V 4.0 a b ø3.2±0.1 2 0.65 +0.2 -0.1 1.4 ∗hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000) sTypical Switching Characteristics (Common Emitter) VCC (V) 30 RL (Ω) 6 IC (A) 5 VBB1 (V) 10 VBB2 (V) –5 IB1 (mA) 5 IB2 (mA) –5 ton (µs) 0.8typ tstg (µs) 6.2typ tf (µs) 1.1typ Weight : Approx 6.0g a. Part No. b. Lot No. I C – V CE Characteristics (Typical) A 1m V CE ( sat ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s a t) (V ) 3 I C – V BE Temperature Characteristics (Typical) 6 (V CE =4V) 6 5mA 0. 5m A 0. 4m A 0.3 mA Collector Current I C (A) Collector Current I C (A) 5˚C 12 0.2mA (C as Temp (Case –30˚C ) (Case Temp ) I C =5A 1 2 I C =3A 2 I B =0.1mA 0 0 2 4 6 0 0.1 0.5 1 5 10 50 100 0 0 1 25˚C eT 4 2 4 em p) 2 2.5 Collector-Emitter Voltage V C E (V) Base Current I B (mA) Base-Emittor Voltage V B E (V) (V C E =4V) 50000 DC Curr ent Gain h F E DC C urrent G ain h FE 50000 125˚C 10000 5000 25˚C (V C E =4V) θ j - a (˚C /W) h FE – I C Characteristics (Typical) h FE – I C Temperature Characteristics (Typical) θ j-a – t Characteristics 5 10000 5000 Typ 1000 500 1000 500 –30˚C Transient Thermal Resistance 1 0.5 1 5 10 50 100 Time t(ms) 500 1000 2000 100 0.01 0.1 0.5 1 56 100 0.01 0.1 0.5 1 56 Collector Current I C (A) Collector Current I C (A) f T – I E Characteristics (Typical) (V C E =12V) 80 20 Safe Operating Area (Single Pulse) 60 P c – T a Derating Typ 10 5 10 60 Collector Curre nt I C (A) Maximu m Power Dissipa tion P C (W) 10 Cut-o ff F requ ency f T (MH Z ) W m D s C ith 0m s 40 In fin ite he 40 1 0.5 at si nk 20 20 Without Heatsink Natural Cooling 0.1 Without Heatsink 3 5 10 50 100 200 3.5 0 0 25 50 75 100 125 150 0 –0.02 –0.1 –1 –6 0.05 Collector-Emitter Voltage V C E (V) Emitter Current I E (A) Ambient Temperature Ta(˚C) 160