2SD2643

C Equivalent circuit 2SD2643 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1687) V(BR)CEO IC 6 VEB=5V 100max µA IC=30mA 110min V A hFE VCE=4V, IC=5A 5000min∗ A VCE(sat) IC=5A, IB=5mA 2.5max 60(Tc=25°C) W VBE(sat) IC=5A, IB=5mA 3.0max V Tj 150 °C fT VCE=12V, IE=–0.5A 60typ MHz –55 to +150 °C COB VCB=10V, f=1MHz 55typ pF Tstg 3.3 3.0 1 PC VBB1 (V) VBB2 (V) IB1 (mA) IB2 (mA) ton (µs) tstg (µs) tf (µs) 30 6 5 10 –5 5 –5 0.8typ 6.2typ 1.1typ A 2 I B =0.1mA 4 0 6 Collector-Emitter Voltage V C E (V) I C =3A 0.5 0.1 1 5 10 50 m m (V C E =4V) 0.5 1 10000 25˚C 5000 –30˚C 1000 500 100 0.01 56 0.1 N 0.1 125˚C Transient Thermal Resistance 100 0.01 DC Curr ent Gain h FE ec o R 500 ot D C Cur r ent Gai n h F E 1000 p) em eT as (C 5˚C 12 0 1 Collector Current I C (A) 0.5 2.5 1 5 1 0.5 1 56 5 10 50 100 500 1000 2000 Time t(ms) Collector Current I C (A) f T – I E Characteristics (Typical) 2 θ j-a – t Characteristics h FE – I C Temperature Characteristics (Typical) Typ 5000 0 100 50000 10000 2 Base-Emittor Voltage V B E (V) (V C E =4V) 50000 4 Base Current I B (mA) h FE – I C Characteristics (Typical) (V CE =4V) ew 1 I C =5A θ j - a (˚C /W) 2 0 2 en 0 E (Case 0.2mA C 25˚C 4 Weight : Approx 6.5g a. Part No. b. Lot No. 6 rN Collector Current I C (A) 0.3 mA B 3 fo 0. 4m A 3.35 1.5 d A de 5m Collector-Emitter Saturation Voltage V C E (sa t) (V ) 0. 4.4 I C – V BE Temperature Characteristics (Typical) V CE ( sat ) – I B Characteristics (Typical) 1m 5mA 6 0.65 +0.2 -0.1 5.45±0.1 1.5 Collector Current I C (A) I C – V CE Characteristics (Typical) 5.45±0.1 es ig IC (A) 0.8 2.15 D RL (Ω) 1.75 1.05 +0.2 -0.1 ∗hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000) ■Typical Switching Characteristics (Common Emitter) VCC (V) 3.45 ±0.2 ø3.3±0.2 a b V IB 5.5±0.2 ) IEBO V 15.6±0.2 Temp V 5 µA (Case 110 VEBO 100max –30˚C VCEO VCB=110V External Dimensions FM100(TO3PF) 0.8±0.2 ICBO Unit 5.5 V Ratings 1.6 110 (Ta=25°C) Conditions ) VCBO Symbol Temp Unit ns ■Electrical Characteristics Ratings 9.5±0.2 Symbol Safe Operating Area (Single Pulse) P c – T a Derating (V C E =12V) 80 si nk Collector Curr ent I C (A) at 162 –6 he –1 Emitter Current I E (A) ite –0.1 fin 0.1 0 –0.02 40 In Without Heatsink Natural Cooling ith s 1 0.5 W 0m s 20 C 10 40 D m 5 60 Maxim um Power Dissip ation P C (W) 10 10 Cut- off F req uenc y f T (M H Z ) 60 20 Typ E Application : Audio, Series Regulator and General Purpose 23.0±0.3 ■Absolute maximum ratings (Ta=25°C) (7 0 Ω ) 16.2 Darlington B 20 Without Heatsink 0.05 3 5 10 50 100 Collector-Emitter Voltage V C E (V) 200 3.5 0 0 25 50 75 100 Ambient Temperature Ta(˚C) 125 150