2SK2701A

2-2 MOS FETs Specifications List by Part Number Absolute Maximum Ratings Part Number 2SK2420 VDSS VGSS ID ID (pulse) PD (V) (V) (A) (A) (W) IGSS EAS (mJ) (nA) max VTH IDSS Conditions VGS (V) (µA) min max Conditions VDS (V) (V) min max Conditions VDS ID (V) (µA) 60 ±20 ±30 ±120 40 38 ±100 ±20 100 60 2.0 4.0 10 2SK2701A 450 ±30 ±7 ±28 35 130 ±100 ±30 100 450 2.0 4.0 10 250 1m 2SK2803 450 ±30 ±3 ±12 30 30 ±100 ±30 100 450 2.0 4.0 10 1m 250 2SK2848 600 ±30 ±2 ±8 30 10 ±100 ±30 100 600 2.0 4.0 10 2SK2943 900 ±30 ±3 ±12 30 60 ±100 ±30 100 900 2.0 4.0 10 1m 2SK3003 200 ±20 ±18 ±72 35 120 ±100 ±20 100 200 2.0 4.0 10 1m 2SK3004 250 ±20 ±18 ±72 35 120 ±100 ±20 100 250 2.0 4.0 10 1m 2SK3199 500 ±30 ±5 ±20 30 35 ±100 ±30 100 500 2.0 4.0 10 1m 2SK3710 60 ±20 ±70 ±140 90 468 ±10µ ±15 100 60 2.0 4.0 10 1m ±10µ +15 100 60 2.0 4.0 10 1m ±10 ±15 100 40 2.0 4.0 10 1m 2SK3711 60 ±20 ±70 ±140 130 2SK3800 40 ±20 ±70 ±140 80 400 2SK3801 40 ±20 ±70 ±140 100 400 ±10 ±15 100 40 2.0 4.0 10 1m EKV550 50 ±20 ±50 ±150 85 150 ±10µ ±20 100 50 3.0 4.2 10 250 FKP202 200 ±30 ±45 ±180 40 200 ±100 ±30 100 200 3.0 4.5 10 1m FKP250A 250 ±30 ±50 ±200 85 400 ±100 ±30 100 250 3.0 4.5 10 1m FKP252 250 ±30 ±25 ±100 40 200 ±100 ±30 100 250 3.0 4.5 10 1m FKP253 250 ±30 ±20 ± 80 40 160 ±100 ±30 100 250 3.0 4.5 10 1m FKP280A 280 ±30 ±40 ±160 85 400 ±100 ±30 100 280 3.0 4.5 10 1m FKP300A 300 ±30 ±30 ±120 85 400 ±100 ±30 100 300 3.0 4.5 10 1m FKP330C 330 ±30 ±30 ±120 85 500 ±100 ±30 100 330 3.0 4.5 10 1m FKV460S 40 +20, –10 ±60 ±180 60 +10, –5µ +20, –10 100 40 1.0 2.5 10 250 FKV550T 50 ±20 ±50 ±150 35 150 ±10µ ±20 100 50 1.0 2.5 10 250 FKV550N 50 ±20 ±50 ±150 35 150 ±10µ ±20 100 50 3.0 4.2 10 250 300 FKV575 50 ±20 ±75 ±200 40 FKV660S 60 +20, –10 ±60 ±180 60 SKP202 200 ±30 ±45 ±180 95 SKP253 250 ±30 ±20 ± 80 40 150 Transistors ±100 ±20 100 50 3.0 4.5 10 250 +10, –5µ +20, –10 100 60 1.0 2.5 10 250 200 ±100 ±30 100 200 3.0 4.5 10 1m 160 ±100 ±30 100 250 3.0 4.5 10 1m 2-2 MOS FETs Electrical Characteristics Re (yfs) Conditions (S) ID VDS typ (V) (A) min 13 Ciss (pF) typ 20 10 15 2200 3.5 5 20 3.5 720 1.5 2.1 20 1.5 340 1.2 1.7 20 1 1.8 2.8 20 7 11 7 Crss (pF) typ Mass RDS (ON) Conditions VDS VGS (V) (V) Conditions VGS ID (V) (A) (Ω) typ max (Ω) typ max Conditions VGS ID (V) (A) Package (g) TO220F(FM20) 2.0 3.5 TO220F(FM20) 2.0 1.5 TO220F(FM20) 2.0 1 TO220F(FM20) 2.0 10 1.5 TO220F(FM20) 2.0 175m 10 9 TO220F(FM20) 2.0 0.2 0.25 10 9 TO220F(FM20) 2.0 1.2 1.5 10 2.5 TO220F(FM20) 2.0 0 25 21m 62 0 10 0.84 1.1 10 26 0 10 2.1 2.8 10 290 30 0 10 3 3.8 10 1.5 600 40 0 10 4 5 10 9 850 250 0 10 130m 11 10 9 850 250 0 10 3.5 5.2 20 2.5 650 110 0 10 30 80 10 35 8000 1000 0 10 5m 6m 10 35 TO220S(Surface-mount) 1.5 30 80 10 35 8000 1000 0 10 5m 6m 10 35 TO3P(MT100) 30 50 10 35 5100 860 0 10 5m 6m 10 35 TO220S(Surface-mount) 1.5 30 50 17 28m 10 15 6.0 10 35 5100 860 0 10 5m 6m 10 35 TO3P(MT100) 6.0 10 25 2000 500 0 10 12m 15m 10 25 TO220 2.0 18 28 10 22 2000 80 0 25 45m 53m 10 22 TO220F(FM20) 2.0 30 42 10 25 3800 210 0 25 37m 43m 10 25 TO3PF(FM100) 6.5 13 21 10 12 2000 70 0 25 68m 75m 10 12 TO220F(FM20) 2.0 8 17 10 10 1600 50 0 25 86m 95m 10 10 TO220F(FM20) 2.0 25 38 10 20 3800 190 0 25 46m 53m 10 20 TO3PF(FM100) 6.5 20 33 10 15 3800 180 0 25 57m 65m 10 15 TO3PF(FM100) 6.5 23 37 10 15 4600 220 0 25 50m 63m 10 15 TO3PF(FM100) 6.5 20 10 25 2800 600 0 10 7m 9m 10 25 TO220S(Surface-mount) 1.5 20 10 25 2700 500 0 10 10m 13m 10 25 TO220F(FM20) 2.0 17 10 25 2000 500 0 10 12m 15m 10 25 TO220F(FM20) 2.0 30 10 37 3200 750 0 10 7m 10m 10 37 TO220F(FM20) 2.0 20 10 25 2500 150 0 10 11m 14m 10 25 TO220S(Surface-mount) 1.5 18 28 10 22 2000 80 0 25 45m 53m 10 22 TO263(Surface-mount) 1.5 8 17 10 10 1600 50 0 25 86m 95m 10 10 TO263(Surface-mount) 1.5 Transistors 151 Package Type (Dimensions) • TO-220F (FM20) • TO-220 (MT-25) • TO-3P (MT-100) φ 3.2 ±0.1 2.0 19.9±0.3 4.0 13.1±0.5 2.4±0.2 2 +0.2 −0.1 20.0min 3.5 ±0.2 0.5 −0.1 2.54±0.2 0.45+0.2 −0.1 3 +0.2 −0.1 1.05+0.2 −0.1 5.45 ±0.1 B 10±0.2 5.45 ±0.1 E C 2.2±0.2 (1) (2) (3) • TO-3PF (FM100) • MT-200 • TO-220S ±0.2 10.2±0.3 9 5.45±0.1 4.4 0.65+0.2 −0.1 1.05 +0.2 −0.1 5.45 ±0.1 5.45 ±0.1 B 1.5 C 0.6 +0.2 −0.1 1.2±0.2 3.0 +0.3 −0.1 (1.5) a: Part Number b: Polarity c: Lot No. 2.54±0.5 q w e 10.2+0.3 E 2 3 • TO3P-5Pin 1.30 +0.10 –0.05 PNP (Including pulling out the burr) Gate burr (Measured at the root) (Measured at the root) (Including the solder drip) 2.40±0.20 (R0.30) 2.54±0.30 4.90±0.20 0.80±0.10 2.54±0.20 (Including pulling out the burr) Gate burr 0.10±0.15 (0.75) 2.00±0.10 9.20±0.20 1.20±0.20 NPN 4.50±0.20 15.30±0.30 (0.40) 1.40±0.20 (1) (2) (3) 10.00±0.20 0.4±0.1 a: Part Number b: Lot No. • TO-263 2.54±0.20 +0.3 +0.2 0.86 –0.1 3 +0.3 4.1max 20.0min 1.27±0.2 2 2.54±0.5 3.35±0.2 +0.2 0.1 –0.1 2.59±0.2 1 1.27±0.10 (1.5) 8.6±0.3 c 3.0 –0.5 21.4±0.3 b b a: Part Number b: Lot No. 9.90±0.20 1.3±0.2 0.50 +0.10 –0.05 (Including the solder drip) 1.5 a a 3.0 1.6 (16.2) 0.8 1.75±0.15 2.15±0.15 1.05+0.2 −0.1 5.45±0.1 4.44±0.2 7 5.5 0.8 2.1 2-φ 3.2 ±0.1 φ 3.3±0.2 a b 3.3 23.0 ±0.3 9.5 ±0.2 24.4 ±0.2 5.5±0.2 3.45±0.2 a: Part Number b: Lot No. 6.0 ±0.2 36.4 ±0.3 15.6±0.2 1.7 +0.2 −0.1 (1.4) a: Part Number b: Lot No. 0.65+0.2 −0.1 10.0 –0.5 2.54 2.0 ±0.1 a b ±0.15 3.9 13.0min 2.54 4.8 ±0.2 2.4 1.35±0.15 1.35±0.15 0.85+0.2 −0.1 9.6 ±0.2 ±0.2 (3) 0.8 ±0.2 a b 4.5±0.2 1.3±0.2 5.0 ±0.7 2.8±0.2 9.2±0.3 φ 3.6±0.2 φ 3.3±0.2 15.9±0.3 9.9±0.3 (8.7) 18.95MAX (1.7) 4.0 ±0.3 16.0 ±0.3 8.4 ±0.2 (1.3) 15.6 ±0.3 4.2±0.2 C 2.8±0.2 0.5 10.0±0.2 (Measured at the root) (Measured at the root) (Measured at the root) (Measured at the root) (Unit : mm) Transistors 171