40 V, 80 A, 4.1 mΩ Low RDS(ON)
N ch Trench Power MOSFET
EKI04047
Data Sheet
Package
●
●
●
●
V(BR)DSS --------------------------------- 40 V (ID = 100 µA)
ID ---------------------------------------------------------- 80 A
RDS(ON) ---------- 5.2 mΩ max. (VGS = 10 V, ID = 42.8 A)
Qg ------16.0 nC (VGS = 4.5 V, VDS = 20 V, ID = 42.8 A)
● TO220-3L
●
●
●
●
●
●
Low Total Gate Charge
High Speed Switching
Low On-Resistance
Capable of 4.5 V Gate Drive
100 % UIL Tested
RoHS Compliant
(4)
ns
Features
es
ig
(1) (2) (3)
Applications
D(2)(4)
ew
D
● DC-DC converters
● Synchronous Rectification
● Power Supplies
Not to scale
Symbol
m
ec
o
Pulsed Drain Current
Rating
Unit
VDS
40
V
VGS
± 20
V
TC = 25 °C
80
A
PW ≤ 100µs
Duty cycle ≤ 1 %
161
A
80
A
161
A
89
mJ
16.7
A
90
W
m
Gate to Source Voltage
Continuous Drain Current
Test conditions
en
Parameter
de
Unless otherwise specified, TA = 25 °C
d
Absolute Maximum Ratings
Drain to Source Voltage
ot
R
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
N
Single Pulse Avalanche Energy
S(3)
fo
rN
G(1)
ID
IDM
IS
ISM
EAS
PW ≤ 100µs
Duty cycle ≤ 1 %
VDD = 20 V, L = 1 mH,
IAS = 9.4 A, unclamped,
RG = 4.7 Ω
Refer to Figure 1
Avalanche Current
IAS
Power Dissipation
PD
Operating Junction Temperature
TJ
150
°C
TSTG
− 55 to 150
°C
Storage Temperature Range
TC = 25 °C
EKI04047-DSE Rev.1.4
SANKEN ELCTRIC CO., LTD.
May 09, 2018
http://www.sanken-ele.co.jp/en
© SANKEN ELECTRIC CO., LTD. 2013
1
EKI04047
Thermal Characteristics
Unless otherwise specified, TA = 25 °C
Parameter
Thermal Resistance
(Junction to Case)
Thermal Resistance
(Junction to Ambient)
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
RθJC
−
−
1.4
°C/W
RθJA
−
−
62.5
°C/W
Min.
Typ.
Electrical Characteristics
ns
Unless otherwise specified, TA = 25 °C
Unit
−
−
V
−
100
µA
−
−
± 100
nA
VDS = VGS, ID = 650 μA
1.0
2.0
2.5
V
ID = 42.8 A, VGS = 10 V
−
4.1
5.2
mΩ
ID = 21.4 A, VGS = 4.5 V
−
5.4
7.0
mΩ
f = 1 MHz
−
1.5
−
Ω
−
2410
−
−
395
−
−
190
−
−
35.0
−
−
16.0
−
−
5.6
−
−
6.0
−
−
4.1
−
−
5.6
−
−
19.7
−
−
11.9
−
IS = 42.8 A, VGS = 0 V
−
0.9
1.5
V
IF = 42.8 A
di/dt = 100 A/µs
Refer to Figure 3
−
32.9
−
ns
−
30.3
−
nC
ID = 100 μA, VGS = 0 V
40
IDSS
VDS = 40 V, VGS = 0 V
−
Gate to Source Leakage Current
IGSS
VGS = ± 20 V
RG
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge (VGS = 10 V)
Qg1
en
Total Gate Charge (VGS = 4.5 V)
ec
o
Turn-On Delay Time
Qgs
m
Gate to Drain Charge
Qg2
m
Gate to Source Charge
Rise Time
R
Turn-Off Delay Time
N
ot
Fall Time
Source to Drain Diode Forward
Voltage
Source to Drain Diode Reverse
Recovery Time
Source to Drain Diode Reverse
Recovery Charge
VDS = 25 V
VGS = 0 V
f = 1 MHz
de
Gate Resistance
rN
RDS(ON)
fo
Static Drain to Source
On-Resistance
d
VGS(th)
VDS = 20 V
ID = 42.8 A
Qgd
td(on)
tr
td(off)
VDD = 20 V
ID = 42.8 A
VGS = 10 V, RG = 4.7 Ω
Refer to Figure 2
tf
VSD
trr
Qrr
EKI04047-DSE Rev.1.4
SANKEN ELCTRIC CO., LTD.
May 09, 2018
http://www.sanken-ele.co.jp/en
© SANKEN ELECTRIC CO., LTD. 2013
Max.
es
ig
V(BR)DSS
Gate Threshold Voltage
Test Conditions
ew
Symbol
D
Parameter
Drain to Source Breakdown
Voltage
Drain to Source Leakage Current
pF
nC
ns
2
EKI04047
Test Circuits and Performance Curves
E AS
L
V(BR)DSS
1
2
L I AS
2
V(BR)DSS VDD
V(BR)DSS
ID
VDS
IAS
RG
VDD
VDS
0V
ID
VDD
ns
VGS
(b) Waveform
Unclamped Inductive Switching
RL
RG
VDD
d
VGS
90%
VDS
de
10%
td(on) tr
m
en
P.W. = 10 μs
Duty cycle ≤ 1 %
td(off) tf
ton
toff
(a) Test Circuit
(b) Waveform
Figure 2.
Switching Time
ec
o
m
10%
fo
VDS
0V
90%
rN
VGS
ew
D
Figure 1.
es
ig
(a) Test Circuit
R
D.U.T.
ot
IF
L
IF
N
VDD
RG
trr
0V
VGS
IRM × 90 %
di/dt
0V
IRM
(a) Test Circuit
Figure 3.
(b) Waveform
Diode Reverse Recovery Time
EKI04047-DSE Rev.1.4
SANKEN ELCTRIC CO., LTD.
May 09, 2018
http://www.sanken-ele.co.jp/en
© SANKEN ELECTRIC CO., LTD. 2013
3
EKI04047
RDS(ON)-ID characteristics (typical)
RDS(ON)-ID characteristics (typical)
VGS=10V
ID-VGS characteristics (typical)
VGS=4.5V
10
VDS=5V
25
160
9
140
8
20
Tc = 125℃
120
75℃
5
25℃
4
3
2
100
Tc = 125℃
15
ID (A)
6
RDS(ON) (mΩ )
75℃
25℃
10
5
Tc =125℃
60
75℃
40
25℃
20
1
0
0
40
60
80
100 120 140 160
0
0
20
40
60
80
ID (A)
100 120 140 160
160
0.4
VGS=10V
D
ID=35.4A
60
ID=21.4A
40
3V
fo
10
0
15
0
0.5
80
Tc =125℃
60
75℃
40
0V
20
5
VDS=0V
100
ew
VGS=4.5V
80
0.0
5
120
100
rN
IDR (A)
ID=42.8A
4
140
120
0.2
3
160
140
0.3
2
IDR-VSD characteristics (typical)
Tc=25℃
Tc=25℃
0
1
VGS (V)
IDR-VSD characteristics (typical)
VDS-VGS characteristics (typical)
0.1
0
ID (A)
es
ig
20
IDR (A)
0
VDS (V)
80
ns
RDS(ON) (mΩ )
7
25℃
20
0
1
1.5
0
0.5
1
VSD (V)
1.5
VSD (V)
Capacitance-VDS characteristics (typical)
VGS - Qg characteristics (typical)
3
m
Ciss
VGS (V)
ec
o
m
Coss
Vth (V)
10
1000
5
Crss
10
10
20
ot
0
1
ID=650uA
VGS=VDS
0
30
2
Tc=25℃
VDS=20V
ID=42.8A
R
100
Ta=25℃
VGS=0V
f =1MHz
0
0
40
10
20
30
25
40
50
Qg (nC)
N
VDS (V)
RDS(ON)-Tc characteristics (typical)
75
100
125
150
Tc (℃)
RDS(ON)-Tc characteristics (typical)
BVDSS-Tc characteristics (typical)
12
10
52
10
8
50
6
4
2
8
BVDSS (V)
RDS(ON) (mΩ)
RDS(ON) (mΩ)
Vth-Tc characteristics (typical)
en
15
10000
Capacitance (pF)
de
d
VGS (V)
6
4
2
ID=42.8A
VGS=10V
25
50
75
100
Tc (℃)
125
150
25
50
75
100
125
46
ID=1mA
VGS=0V
44
ID=21.4A
VGS=4.5V
0
0
48
150
Tc (℃)
EKI04047-DSE Rev.1.4
SANKEN ELCTRIC CO., LTD.
May 09, 2018
http://www.sanken-ele.co.jp/en
© SANKEN ELECTRIC CO., LTD. 2013
42
25
50
75
100
125
150
Tc (℃)
4
EKI04047
PD-Ta Derating
SAFE OPERATING AREA
1000
100
ID(pulse) MAX
PT=100μs
80
100
ID (A)
PD (W)
60
10
PT=1ms
40
1
20
0.1
0
50
100
0.1
150
1
Ta (℃)
TRANSIENT THERMAL RESISTANCE - PULSE WIDTH
100
ew
D
1.E+01
1.E+00
rN
Rth j-c (℃/W)
10
VDS (V)
es
ig
0
ns
1 shot
Tc=25℃
1.E-03
1.E-02
1.E-01
de
1.E-02
1.E-04
d
fo
1.E-01
1.E+00
Tc = 25℃
1shot
VDS < 10V
1.E+01
1.E+02
N
ot
R
ec
o
m
m
en
P.T. (sec)
EKI04047-DSE Rev.1.4
SANKEN ELCTRIC CO., LTD.
May 09, 2018
http://www.sanken-ele.co.jp/en
© SANKEN ELECTRIC CO., LTD. 2013
5
EKI04047
Physical Dimensions
en
de
d
fo
rN
ew
D
es
ig
ns
TO220-3L
NOTES:
Dimensions in millimeters
Maximum gate burr height is 0.3 mm.
Bare lead frame: Pb-free (RoHS compliant)
When soldering the products, it is required to minimize the working time, within the following limits:
Flow: 260 ± 5 °C / 10 ± 1 s, 2 times
Soldering Iron: 380 ± 10 °C / 3.5 ± 0.5 s, 1 time
Soldering should be at a distance of at least 1.5 mm from the body of the product.
- Recommended screw torque for TO220: 0.490 N∙m to 0.686 N∙m (5 kgf∙cm to 7 kgf∙cm)
R
ec
o
m
m
-
N
ot
Marking Diagram
YMW
BXX
EKI×××××
Lot Number:
Y is the last digit of the year of manufacture (0 to 9)
M is the month of the year (1 to 9, O, N, or D)
W is the week of the month (1 to 5)
B expresses Pb free pins
XX is the control number
Part Number
EKI04047-DSE Rev.1.4
SANKEN ELCTRIC CO., LTD.
May 09, 2018
http://www.sanken-ele.co.jp/en
© SANKEN ELECTRIC CO., LTD. 2013
6
EKI04047
Important Notes
N
ot
R
ec
o
m
m
en
de
d
fo
rN
ew
D
es
ig
ns
● All data, illustrations, graphs, tables and any other information included in this document (the “Information”) as to Sanken’s
products listed herein (the “Sanken Products”) are current as of the date this document is issued. The Information is subject to any
change without notice due to improvement of the Sanken Products, etc. Please make sure to confirm with a Sanken sales
representative that the contents set forth in this document reflect the latest revisions before use.
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appliances, office equipment, telecommunication equipment, measuring equipment, etc.). Prior to use of the Sanken Products,
please put your signature, or affix your name and seal, on the specification documents of the Sanken Products and return them to
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your name and seal, on the specification documents of the Sanken Products and return them to Sanken, prior to the use of the
Sanken Products. The Sanken Products are not intended for use in any applications that require extremely high reliability such as:
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● In the event of using the Sanken Products by either (i) combining other products or materials or both therewith or (ii) physically,
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DSGN-CEZ-16003
EKI04047-DSE Rev.1.4
SANKEN ELCTRIC CO., LTD.
May 09, 2018
http://www.sanken-ele.co.jp/en
© SANKEN ELECTRIC CO., LTD. 2013
7