VCE = 600 V, IC = 18 A
Trench IGBT
FGM623S
Data Sheet
Description
Package
The FGM623S is 600 V trench IGBT. Sanken original
trench structure decreases gate capacitance, and achieves
high speed switching and switching loss reduction. Thus,
the IGBT can improve the efficiency of your circuit.
TO3PF-3L
Features
● Low Saturation Voltage
● High Speed Switching
● Bare Lead Frame: Pb-free (RoHS Compliant)
●
●
●
●
VCE ------------------------------------------------------ 600 V
IC (TC = 100 °C) ----------------------------------------- 18 A
VCE(sat) ----------------------------------------------- 1.5 V typ.
tf (TJ = 25 °C) ------------------------------------ 120 ns typ.
(1) (2) (3)
(2)
Applications
The following applications including partial switching
PFC circuit:
● Air Conditioner
● Power Conditioner
FGM623S-DSE Rev.1.2
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© SANKEN ELECTRIC CO., LTD. 2010
(1) Gate
(2) Collector
(3) Emitter
(1)
(3)
Not to scale
1
FGM623S
Absolute Maximum Ratings
Unless otherwise specified, TA = 25 °C.
Parameter
Symbol
Conditions
Rating
Unit
Collector to Emitter Voltage
VCE
600
V
Gate to Emitter Voltage
VGE
±30
V
TC = 25 °C
30
A
TC = 100 °C
PW ≤ 1 ms,
duty cycle ≤ 1%
TC = 25 °C
18
A
100
A
60
W
Continuous Collector Current
Pulsed Collector Current
IC
IC(PULSE)
Power Dissipation
PD
Operating Junction Temperature
TJ
150
°C
TSTG
−55 to 150
°C
Storage Temperature
Thermal Characteristics
Unless otherwise specified, TA = 25 °C.
Parameter
Symbol
Thermal Resistance
RθJC
(Junction to Case)
Conditions
Min.
Typ.
Max.
Unit
—
—
2.08
°C/W
FGM623S-DSE Rev.1.2
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© SANKEN ELECTRIC CO., LTD. 2010
2
FGM623S
Electrical Characteristics
Unless otherwise specified, TA = 25 °C.
Parameter
Symbol
Collector to Emitter Breakdown
V(BR)CES
Voltage
Collector to Emitter Leakage Current
ICES
Gate to Emitter Leakage Current
Gate Threshold Voltage
Collector to Emitter Saturation
Voltage
Input Capacitance
Min.
Typ.
Max.
Unit
IC = 100 μA, VGE = 0 V
600
—
—
V
VCE = 600 V, VGE = 0 V
—
—
100
µA
VGE = ±30 V
—
—
±500
nA
VGE(TH)
VCE = 10 V, IC = 1 mA
3
—
6
V
VCE(sat)
VGE = 15 V, IC = 30 A
—
1.5
1.7
V
—
2500
—
—
150
—
—
80
—
—
65
—
—
20
—
IGES
Cies
Output Capacitance
Coes
Reverse Transfer Capacitance
Cres
Gate Charge
Qg
Conditions
VCE = 20 V,
VGE = 0 V,
f = 1.0 MHz
VCE = 300 V, IC = 30 A,
VGE = 15 V
Gate to Emitter Charge
Qge
Gate to Collector Charge
Qgc
—
20
—
Turn-on Delay Time
td(on)
—
100
—
—
80
—
—
300
—
tf
—
120
—
td(on)
—
100
—
—
100
—
—
300
—
—
200
—
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
tr
td(off)
tr
td(off)
TJ = 25 °C;
see Figure 1
TJ = 125 °C;
see Figure 1
tf
FGM623S-DSE Rev.1.2
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© SANKEN ELECTRIC CO., LTD. 2010
pF
nC
ns
ns
3
FGM623S
Test Circuits and Waveforms
Test conditions
VCE = 300 V
IC = 30 A
VGE = 15 V
RG = 39 Ω
L= 100 μH
Clamp Diode
(FMX-G26S)
L
RG
VCE
IC
15V
VGE
(a) Test Circuit
VGE
90%
10%
t
VCE
t
IC
90%
90%
10%
10%
td(on)
td(off)
tr
t
tf
(b) Waveform
Figure 1.
Test Circuits and Waveforms of dv/dt and Switching Time
FGM623S-DSE Rev.1.2
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© SANKEN ELECTRIC CO., LTD. 2010
4
FGM623S
1000
1000
100
100
Collector Current, IC (A)
Collector Current, IC (A)
Rating and Characteristic Curves
10
1
IGBT,
single pulse,
TJ = 125 °C
0.1
1
10
100
10 μs
100 μs
10
1
IGBT,
single pulse,
TJ = 25 °C
0.1
1000
1
Collector–Emitter Voltage, VCE (V)
Figure 2.
100
1000
Collector–Emitter Voltage, VCE (V)
IGBT Reverse Bias Safe Operating
Area
Figure 3.
IGBT Safe Operating Area
40
100
80
Collector Current, IC (A)
Power Dissipation, PD (W)
10
60
40
TO3PF-3L,
TJ < 150 °C
0
25
50
20
10
TO3PF-3L,
TJ < 150 °C
20
30
75
100
125
150
0
25
Case Temperature, TC (°C)
Figure 4.
Power Dissipation vs. Case
Temperature
50
75
100
125
150
Case Temperature, TC (°C)
Figure 5.
FGM623S-DSE Rev.1.2
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Collector Current vs. Case Temperature
5
FGM623S
100
100
TJ = 25 °C
TJ = 125 °C
VGE = 15 V
VGE = 15 V
80
VGE = 10V
VGE = 20 V
Collector Current, IC (A)
Collector Current, IC (A)
80
60
VGE = 8 V
40
20
VGE = 20 V
VGE = 10 V
60
VGE = 8 V
40
20
VGE = 7 V
VGE = 7 V
0
0
0
1
2
3
4
5
0
1
Collector–Emitter Voltage, VCE (V)
Figure 6.
3
4
5
Collector–Emitter Voltage, VCE (V)
Output Characteristics (TJ = 25 °C)
Figure 7.
100
Output Characteristics (TJ = 175 °C)
Collector-Emitter Saturation, VCE (sat) (V)
3.0
VCE = 5 V
80
Collector Current, IC (A)
2
60
40
TJ = 125 °C
TJ = 25 °C
20
IC = 100 A
VGE = 15 V
2.5
IC = 50 A
2.0
IC = 30 A
1.5
1.0
0
0
5
10
15
0
Transfer Characteristics
50
75
100
125
150
Junction Temperature, TJ (°C)
Gate–Emitter Voltage, VGE (V)
Figure 8.
25
Figure 9.
FGM623S-DSE Rev.1.2
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© SANKEN ELECTRIC CO., LTD. 2010
Saturation Voltage vs. Junction
Temperature
6
FGM623S
Gate Threshold Voltage (V)
at VCE = 10 V, IC = 1 mA
7
10000
6
Cies
Capacitance (pF)
1000
5
Coes
100
4
f = 1 MHz,
VGE = 0 V
3
10
-50
-25
0
25
50
75
100 125 150
0
Junction Temperature, TJ (°C)
Figure 10.
10
20
30
40
50
Collector–Emitter Voltage, VCE (V)
Gate Threshold Voltage vs. Junction
Temperature
Figure 11.
20
Capacitance Characteristics
1000
Inductive load,
IC = 30 A, VCE = 300 V,
VGE = 15 V, RG = 39 Ω
10
VCE ≈ 300 V
Switching Time (ns)
IC = 30 A
Gate -Emitter Voltage, VGE (V)
Cres
td(off)
tf
100
tr
td(on)
10
0
0
20
40
60
25
Typical Gate Charge
75
100
125
150
Junction Temperature, TJ (°C)
Gate Charge, Qg (nC)
Figure 12.
50
Figure 13.
FGM623S-DSE Rev.1.2
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© SANKEN ELECTRIC CO., LTD. 2010
Switching Time vs. Junction
Temperature
7
FGM623S
1000
1000
td(off)
tf
100
tf
Switching Time (ns)
Switching Time (ns)
td(off)
td(on)
10
1
10
10
10
100
100
Gate Resistor, RG (Ω)
Collector Current, IC (A)
Figure 14.
Switching Time vs. Collector Current
Figure 15.
3
Switching Time vs. Gate Resistor
10
Inductive load,
IC = 30 A, VCE = 300 V,
VGE = 15 V, RG = 39 Ω
Inductive load,
VCE = 300 V, VGE = 15 V,
RG = 39 Ω, TJ = 125 °C
8
2
Switching Loss (mJ)
Switching Loss (mJ)
Inductive load,
IC = 30 A, VCE = 300 V,
VGE = 15 V, TJ = 125 °C
td(on)
Inductive load,
VCE = 300 V, VGE = 15 V,
RG = 39 Ω, TJ = 125 °C
tr
tr
100
Eon + Eoff
1
Eoff
Eon + Eoff
6
4
Eoff
2
Eon
Eon
0
0
25
50
75
100
125
150
0
10
Junction Temperature, TJ (°C)
Figure 16.
Switching Loss vs. Junction
Temperature
20
30
40
50
60
70
80
90
Collector Current, IC (A)
Figure 17.
FGM623S-DSE Rev.1.2
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© SANKEN ELECTRIC CO., LTD. 2010
Switching Loss vs. Collector Current
8
FGM623S
4
Inductive load,
IC = 30 A, VCE = 300 V,
VGE = 15 V, TJ = 125 °C
Switching Loss (mJ)
3
Eon + Eoff
2
Eoff
1
Eon
0
10
20
30
40
50
60
70
80
90 100
Gate Resistor, RG (Ω)
Figure 18.
Switching Loss vs. Gate Resistor
Thermal Resistance (°C/W)
10
1
0.1
TO3PF,
TC = 25 °C,
single pulse,
VCE < 5 V
0.01
0.001
1μ
10 μ
100 μ
1m
10 m
100 m
1
10
100
Pulse Width (s)
Figure 19.
Transient Thermal Resistance
FGM623S-DSE Rev.1.2
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© SANKEN ELECTRIC CO., LTD. 2010
9
FGM623S
Physical Dimensions
● TO3PF-3L
Resin coating
NOTES:
- Dimensions in millimeters
- Bare lead frame: Pb-free (RoHS compliant)
- When soldering the products, it is required to minimize the working time, within the following limits:
Flow: 260 ± 5 °C / 10 ± 1 s, 2 times
Soldering Iron: 380 ± 10 °C / 3.5 ± 0.5 s, 1 time (Soldering should be at a distance of at least 1.5 mm from the
body of the products.)
- Recommended screw torque for TO3PF: 0.686 N∙m to 0.882 N∙m (7 kgf∙cm to 9 kgf∙cm)
FGM623S-DSE Rev.1.2
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© SANKEN ELECTRIC CO., LTD. 2010
10
FGM623S
Marking Diagram
FGM623S
YM
DD
Part Number
Lot Number:
Y is the last digit of the year of manufacture (0 to 9)
M is the month of the year (1 to 9, O, N, or D)
DD is the day of the month (01 to 31)
FGM623S-DSE Rev.1.2
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11
FGM623S
Important Notes
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DSGN-CEZ-16002
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12