FKP252

MOSFET FKP252 December. 2005 ■Features • Low on-resistance • Low input capacitance • Avalanche energy capability guaranteed ■Package---TO220F ■Applications • PDP driving • High speed switching ■Equivalent circuit D (2) G (1) S (3) Absolute maximum ratings (Ta=25°C) Characteristic Drain to Source Voltage Gate to Source Voltage Continuous Drain Current Pulsed Drain Current Maximum Power Dissipation Single Pulse Avalanche Energy Avalanche Current Channel Temperature Storage Temperature Symbol VDSS VGSS ID ID(pulse) PD EAS *2 *1 Rating 250 ±30 ±25A ±100A 40 (Tc=25°C) 200 25 150 -55 to 150 Unit V V A A W mJ A °C °C IAS Tch Tstg *1 PW≤100μsec, duty cycle≤1% *2 VDD=20V, L=590μH, ILp=25A, unclamped, RG=50Ω, See Fig.1 . Sanken Electric Co.,Ltd. http://www.sanken-ele.co.jp/en/ 1/9 T02-003EA-051206 MOSFET FKP252 December. 2005 Electrical characteristics (Ta=25°C) Characteristic Symbol Test Conditions Limits MIN. 250 ±100 100 3.0 13 21 68 2000 330 70 30 50 75 4.5 TYP. MAX. Unit V nA μA V S mΩ Drain to Source breakdown Voltage Gate to Source Leakage Current Drain to Source Leakage Current Gate Threshold Voltage Forward Transconductance Static Drain to Source On-Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Diode Forward Voltage Gate Threshold Voltage Temp. Coefficient V(BR)DSS IGSS IDSS VTH Re(Yfs) RDS(ON) Ciss Coss Crss td(on) tr td(off) tf VSD ΔVTH / ΔTch ID=100μA,VGS=0V VGS=±30V VDS=250V, VGS=0V VDS=10V, ID=1mA VDS=10V, ID=12A ID=12A, VGS=10V VDS=25V VGS=0V f=1MHz ID=12A, VDD≈120V RL=10Ω, VGS=10V Rg=5Ω See Fig.2 ISD=25A,VGS=0V VDS=10V, ID=1mA pF ns 100 40 0.9 -8 1.5 V mV/°C Sanken Electric Co.,Ltd. T02-003EA-051206 2/9 MOSFET FKP252 December. 2005 Characteristic Curves ID-VDS Characteristics (typical) 25 VGS=10 6.0 25 (Tc=25°C) ID-VGS Characteristics (typical) VDS=10V 20 5.5 20 15 ID (A) ID (A) 15 10 5.0 10 Tc=-55℃ Tc= 25℃ Tc=125℃ 5 5 0 0 2 4 VDS (V) RDS(on)-ID Characteristics (typical) VGS=10V 0.12 4 6 8 10 0 0 2 4 VGS (V) 6 8 10 VDS-VGS Characteristics (typical) 0.10 3 0.08 RDS(on) (Ω) VDS (V) 0.06 2 ID=25A 0.04 1 0.02 ID=12A 0.00 0 5 10 ID (A) 15 20 25 0 1 10 VGS (V) 100 ＲＤＳ（on） -Tc Characteristics (typical) 0.20 ID=12A VGS=10V RDS(on) (Ω) 0.10 0.00 -100 -50 0 Ｔｃ (℃) 50 100 150 Sanken Electric Co.,Ltd. T02-003EA-051206 3/9 MOSFET FKP252 December. 2005 Characteristic Curves Re(yfs)-ID Characteristics (typical) VDS=10V 100 10000 (Tc=25°C) Capacitance-VDS Characteristics (typical) f=1MHz VGS=0V 10 Ciss Re(yfs) (S) Tc= 25℃ Tc=125℃ 0.1 Capacitacnce (pF) 1 Tc=-55℃ 1000 Cos 100 0.01 0.01 Crs 0.1 1 ID (A) 10 100 IDR-VSD Characteristics (typical) 10 25 0 10 20 VDS (V) 30 40 50 20 1000 SAFE OPERATING AREA 15 IDR (A) ID(pulse) max 100 10 ID max 100μs(1shot) 10V 5 VGS=0V ID [A] 10 RDS(on) LIMITED 0 0.0 1 0.2 0.4 0.6 VSD (V) 0.8 1.0 1.2 1ms (1shot) P D-Ta C ha r a ct er ist ics 50 Tc=25℃ 0.1 40 With infinite heatsink 30 PD (W) 0.01 0.1 1 10 VDS [V] 100 DC OPERATION 1000 20 10 Without heatsink 0 0 50 Ta (℃) 100 150 Sanken Electric Co.,Ltd. T02-003EA-051206 4/9 MOSFET FKP252 December. 2005 Fig.1 Unclamped Inductive Test Method (for Avalanche energy capability) L EAS= V(BR)DSS 1 •L•ILP2• 2 V(BR)DSS − VDD IL VDS ILp RG VGS 0V VDD IL VDS V(BR)DSS VDD (a) Test Circuit (b) Waveforms Fig.2 Switching Time Test Method RL ID VDS RG VGS 0V P.W.=10μs Duty cycle≦1% VDD VDD≈120V ID=12A RL=10Ω VGS=10V RG=5Ω (a) Test Circuit 90% VGS 10% 90% VDS 10% td(on) ton tr td(off) toff tf (b) Output waveforms Sanken Electric Co.,Ltd. T02-003EA-051206 5/9 MOSFET FKP252 December. 2005 External Dimensions FM20 (TO220 Full Mold) Measured between at the root of leads and at the backside Measured at the root Measured at the root (1) (2) (3) Front view Side view Mass: Approx. 2g Sanken Electric Co.,Ltd. T02-003EA-051206 6/9 MOSFET FKP252 December. 2005 Asia Pacific China Sanken Electric Hong Kong Co., Ltd. Suite 1026 Ocean Centre, Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: 852-2735-5262 Fax: 852-2735-5494 Sanken Electric (Shanghai) Co., Ltd. Room3202, Maxdo Centre, Xingyi Road 8, Changning district, Shanghai, China Tel: 86-21-5208-1177 Fax: 86-21-5208-1757 Taiwan Sanken Electric Co., Ltd. Room 1801, 18th Floor, 88 Jung Shiau East Road, Sec. 2, Taipei 100, Taiwan R.O.C. Tel: 886-2-2356-8161 Fax: 886-2-2356-8261 India Saket Devices Pvt. Ltd. Office No.13, First Floor, Bandal - Dhankude Plaza, Near PMT Depot, Paud Road, Kothrud, Pune - 411 038, India Tel: 91-20-5621-2340 91-20-2528-5449 Fax: 91-20-2528-5459 Japan Sanken Electric Co., Ltd. Overseas Sales Headquaters Metropolitan Plaza Bldg. 1-11-1 Nishi-Ikebukuro, Toshima-ku, Tokyo 171-0021, Japan Tel: 81-3-3986-6164 Fax: 81-3-3986-8637 Korea Sanken Electric Korea Co., Ltd. Mirae Asset Life Bldg. 6F, 168 Kongduk-dong, Mapo-ku, Seoul, 121-705, Korea Tel: 82-2-714-3700 Fax: 82-2-3272-2145 Singapore Sanken Electric Singapore Pte. Ltd. 150 Beach Road, #14-03 The Gateway West, Singapore 189720 Tel: 65-6291-4755 Fax: 65-6297-1744 Sanken Electric Co.,Ltd. T02-003EA-051206 7/9 MOSFET FKP252 December. 2005 Europe United Kingdom Sanken Power Systems (UK) Limited Pencoed Technology Park, Pencoed, Bridgend CF35 5HY. UK Tel: 44-1656-869-100 Fax: 44-1656-869-162 North America United States Allegro MicroSystems, Inc. 115 Northeast Cutoff, Worcester, Massachusetts 01606, U.S.A. Tel: 1-508-853-5000 Fax: 1-508-853-3353 Allegro MicroSystems, Inc. (Southern California) 14 Hughes Street, Suite B105, Irvine, CA 92618 Tel: 1-949-460-2003 Fax: 1-949-460-7837 Sanken Electric Co.,Ltd. T02-003EA-051206 8/9 MOSFET FKP252 December. 2005 CAUTION / WARNING ●The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. ● Sanken reserves the right to make changes without further notice to any products herein in the interest of improvements in the performance, reliability, or manufacturability of its products. Before placing an order, Sanken advises its customers to obtain the latest version of the relevant information to verify that the information being relied upon is current. ● Application and operation examples described in this catalog are quoted for the sole purpose of reference for the use of the products herein and Sanken can assume no responsibility for any infringement of industrial property rights, intellectual property rights or any other rights of Sanken or any third party which may result from its use. ● When using the products herein, the applicability and suitability of such products for the intended purpose or object shall be reviewed at the users’ responsibility. ● Although Sanken undertakes to enhance the quality and reliability of its products, the occurrence of failure nd defect of semiconductor products at a certain rate is inevitable. Users of Sanken products are requested to take, at their own risk, preventative measures including safety design of the equipment or systems against any possible injury, death, fires or damages to the society due to device failure or malfunction. ● Sanken products listed in this catalog are designed and intended for the use as components in general purpose electronic equipment or apparatus (home appliances, office equipment, telecommunication equipment, measuring equipment, etc.). Before placing an order, the user’s written consent to the specifications is requested. When considering the use of Sanken products in the applications where higher reliability is required (transportation equipment and its control systems, traffic signal control systems or equipment, fire/crime alarm systems, various safety devices, etc.), please contact your nearest Sanken sales representative to discuss and obtain written confirmation of your specifications. 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Also, as purchaser of these products/technology, you agree to follow the procedures for the export or transfer of these products/technology, under the Foreign Exchange and Foreign Trade Law, when you export or transfer the products/technology abroad. Sanken Electric Co.,Ltd. T02-003EA-051206 9/9