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FLD470

FLD470

  • 厂商:

    SANKEN(三垦)

  • 封装:

  • 描述:

    FLD470 - N channel 40V MOSFET for automotive application TO220F: wide pin package (for high current)...

  • 数据手册
  • 价格&库存
FLD470 数据手册
http://www.sanken-ele.co.jp SANKEN ELECTRIC FLD470 Features N channel 40V MOSFET for automotive application TO220F: wide pin package (for high current) Package FM20 (TO220 Full Mold) Nov. 2010 Applications Automotive: EPS motor driver application Automotive: Other motor driver and solenoid driver application Internal Equivalent Circuit D(2) Key Specifications G(1) S(3) Absolute maximum ratings (Ta=25°C) Characteristic Drain to Source Voltage Gate to Source Voltage Continuous Drain Current Pulsed Drain Current Maximum Power Dissipation Single Pulse Avalanche Energy Avalanche Current Maximum Drain to Source dv/dt 1 Peak diode recovery dv/dt 2 Peak diode recovery di/dt Channel Temperature Storage Temperature Symbol VDSS VGSS ID ID(pulse) ※1 PD EAS ※2 IAS dv/dt 1※2 dv/dt 2※3 di/dt※3 Tch Tstg Rating 40 ±20 ±70 ±140 35 (Tc=25℃) 400 25 0.3 1.0 100 150 -55~150 Unit V V A A W mJ A V/ns V/ns A/μs ℃ ℃ ※1 PW≦100μsec. duty cycle≦1% ※2 VDD=20V, L=1mH, IL=20A, unclamped, Rg=50Ω,See Fig.1 ※3 ISD=25A,See Fig.2 The information included herein is believed to be accurate and reliable. However, SANKEN ELECTRIC CO., LTD assumes no responsibility for its use ; nor for any infringements of patents or other rights of third parties that may result from its use. Copy Right: SANKEN ELECTRIC CO.,LTD. Page 1 http://www.sanken-ele.co.jp SANKEN ELECTRIC FLD470 Electrical characteristics Nov. 2010 (Ta=25°C) Characteristic Symbol Test Conditions Limits MIN 40 ±2 100 2.0 30 3.0 50 5.0 5100 1200 860 100 6.0 4.0 TYP MAX Unit V μA μA V S mΩ Drain to Source breakdown Voltage Gate to Source Leakage Current Drain to Source Leakage Current Gate Threshold Voltage Forward Transconductance Static Drain to Source On-Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Diode Forward Voltage Source-Drain Diode Reverse Recovery Time Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient V(BR)DSS IGSS IDSS VTH Re(yfs) RDS(ON) Ciss Coss Crss ID=100μA,VGS=0V VGS=±15V VDS=40V, VGS=0V VDS=10V, ID=1mA VDS=10V, ID=35A ID=35A, VGS=10V VDS=10V VGS=0V f=1MHz pF td(on) tr td(off) tf VSD trr Rth(ch-c) Rth(ch-a) ID=35A, VDD≒20V RG=22Ω,RGS=50Ω RL=0.57Ω, VGS=10V See Fig.3 130 ISD=50A,VGS=0V ISD=25A di/dt=50A/us 0.9 100 3.57 62.5 1.2 V ns ℃/W ℃/W 100 ns 300 The information included herein is believed to be accurate and reliable. However, SANKEN ELECTRIC CO., LTD assumes no responsibility for its use ; nor for any infringements of patents or other rights of third parties that may result from its use. Copy Right: SANKEN ELECTRIC CO.,LTD. Page 2 http://www.sanken-ele.co.jp SANKEN ELECTRIC FLD470 Nov. 2010 Characteristic Curves (Tc=25℃) The information included herein is believed to be accurate and reliable. However, SANKEN ELECTRIC CO., LTD assumes no responsibility for its use ; nor for any infringements of patents or other rights of third parties that may result from its use. Copy Right: SANKEN ELECTRIC CO.,LTD. Page 3 http://www.sanken-ele.co.jp SANKEN ELECTRIC FLD470 Characteristic Curves (Tc=25℃) Nov. 2010 The information included herein is believed to be accurate and reliable. However, SANKEN ELECTRIC CO., LTD assumes no responsibility for its use ; nor for any infringements of patents or other rights of third parties that may result from its use. Copy Right: SANKEN ELECTRIC CO.,LTD. Page 4 http://www.sanken-ele.co.jp SANKEN ELECTRIC FLD470 Characteristic Curves (Tc=25℃) Nov. 2010 The information included herein is believed to be accurate and reliable. However, SANKEN ELECTRIC CO., LTD assumes no responsibility for its use ; nor for any infringements of patents or other rights of third parties that may result from its use. Copy Right: SANKEN ELECTRIC CO.,LTD. Page 5 http://www.sanken-ele.co.jp SANKEN ELECTRIC FLD470 Characteristic Curves (Tc=25℃) Nov. 2010 The information included herein is believed to be accurate and reliable. However, SANKEN ELECTRIC CO., LTD assumes no responsibility for its use ; nor for any infringements of patents or other rights of third parties that may result from its use. Copy Right: SANKEN ELECTRIC CO.,LTD. Page 6 http://www.sanken-ele.co.jp SANKEN ELECTRIC FLD470 Fig.1 Unclamped Inductive Test Method EAS= Nov. 2010 V(BR)DSS 1 ・L・ILP2・ 2 V(BR)DSS − VDD (a) Test Circuit (b) Waveforms Fig.2 Diode Reverse Recovery Time Test Method (a) Test Circuit (b) Waveforms Fig.3 Switching Time Test Method 90% VGS 10% 90% VDS 10% td(on) ton tr td(off) toff tf (a) Test Circuit (b) Waveforms The information included herein is believed to be accurate and reliable. However, SANKEN ELECTRIC CO., LTD assumes no responsibility for its use ; nor for any infringements of patents or other rights of third parties that may result from its use. Copy Right: SANKEN ELECTRIC CO.,LTD. Page 7 http://www.sanken-ele.co.jp SANKEN ELECTRIC FLD470 Outline FM20 (TO220 Full Mold) Nov. 2010 (1) Gate (2) Drain (Back Side) (1) Gate (3) Source Weight Approx. 2g The information included herein is believed to be accurate and reliable. However, SANKEN ELECTRIC CO., LTD assumes no responsibility for its use ; nor for any infringements of patents or other rights of third parties that may result from its use. Copy Right: SANKEN ELECTRIC CO.,LTD. Page 8
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