MGD623S

VCE = 600 V, IC = 37 A Trench IGBT with Fast Recovery Diode MGD623S Data Sheet Description Package The MGD623S is 600 V trench IGBT. Sanken original trench structure decreases gate capacitance, and achieves high speed switching and switching loss reduction. Thus, the IGBT can improve the efficiency of your circuit. TO3P-3L (4) C Features ● ● ● ● ● ● ● ● ● Low Saturation Voltage High Speed Switching With Integrated Low VF Fast Recovery Diode Bare Lead Frame: Pb-free (RoHS Compliant) VCE ------------------------------------------------------ 600 V IC (TC = 100 °C) ----------------------------------------- 37 A VCE(sat) ----------------------------------------------- 1.8 V typ. tf (TJ = 25 °C) ------------------------------------ 120 ns typ. VF ---------------------------------------------------- 1.2 V typ. Applications ● Microwave Oven ● IH Cooker ● Inverter Circuit (1) (2) (3) G C E C (2)(4) G (1) E (3) Not to scale MGD623S-DSE Rev.1.1 SANKEN ELCTRIC CO., LTD. Jul. 05, 2017 http://www.sanken-ele.co.jp/en © SANKEN ELECTRIC CO., LTD. 2015 1 MGD623S Absolute Maximum Ratings Unless otherwise specified, TA = 25 °C. Parameter Symbol Collector to Emitter Voltage VCE Gate to Emitter Voltage VGE Continuous Collector Current Pulsed Collector Current Diode Continuous Forward Current Diode Pulsed Forward Current Maximum Collector to Emitter dv/dt Power Dissipation Operating Junction Temperature Storage Temperature IC IC(PULSE) IF IF(PULSE) dv/dt PD Conditions TC = 25 °C TC = 100 °C PW ≤ 1 ms, duty cycle ≤ 1% TC = 25 °C PW ≤ 1 ms, duty cycle ≤ 1% TC ≤ 125 °C, see Figure 1 Rating 600 ±30 50 37 Unit V V A A 100 A 30 A 60 A 5 V/ns 150 W 150 −55 to 150 °C °C TC = 25 °C TJ TSTG Remarks Thermal Characteristics Unless otherwise specified, TA = 25 °C. Parameter Symbol Thermal Resistance of IGBT RθJC(IGBT) (Junction to Case) Thermal Resistance of Diode RθJC(Di) (Junction to Case) Conditions Min. Typ. Max. Unit — — 0.833 °C/W — — 1.67 °C/W MGD623S-DSE Rev.1.1 SANKEN ELCTRIC CO., LTD. Jul. 05, 2017 http://www.sanken-ele.co.jp/en © SANKEN ELECTRIC CO., LTD. 2015 Remarks 2 MGD623S Electrical Characteristics Unless otherwise specified, TA = 25 °C. Parameter Symbol Collector to Emitter Breakdown V(BR)CES Voltage Collector to Emitter Leakage Current ICES Gate to Emitter Leakage Current Gate Threshold Voltage Collector to Emitter Saturation Voltage Input Capacitance Min. Typ. Max. Unit IC = 100 μA, VGE = 0 V 600 — — V VCE = 600 V, VGE = 0 V — — 100 µA VGE = ±30 V — — ±500 nA VGE(TH) VCE = 10 V, IC = 1 mA 3 4.5 6 V VCE(sat) VGE = 15 V, IC = 50 A — 1.8 2.4 V — 2500 — — 150 — — 80 — — 65 — — 20 — — 20 — — 75 — — 100 — — 300 — tf — 120 — td(on) — 75 — — 100 — — 300 — — 200 — IGES Cies Output Capacitance Coes Reverse Transfer Capacitance Cres Total Gate Charge QG Gate to Emitter Charge QGE Gate to Collector Charge QGC Turn-on Delay Time td(on) Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Emitter to Collector Diode Forward Voltage Emitter to Collector Diode Reverse Recovery Time tr td(off) tr td(off) Conditions VCE = 20 V, VGE = 0 V, f = 1.0 MHz VCE = 300 V IC = 50 A VGE = 15 V TJ = 25 °C, see Figure 1 TJ = 125 °C, see Figure 1 tf pF nC ns ns VF IF = 30 A — 1.2 1.6 V trr IF = 30 A, di/dt = 100 A/μs — 300 — ns MGD623S-DSE Rev.1.1 SANKEN ELCTRIC CO., LTD. Jul. 05, 2017 http://www.sanken-ele.co.jp/en © SANKEN ELECTRIC CO., LTD. 2015 3 MGD623S Test Circuits and Waveforms Conditions: VCE = 300 V IC = 50 A VGE = 15 V RG = 39 Ω L = 100 μH DUT (Diode) L VCE RG IC 15V VGE DUT (IGBT) (a) Test Circuit VGE 90% 10% t VCE dv/dt t IC 90% 90% 10% 10% td(on) tr td(off) t tf (b) Waveform Figure 1. Test Circuits and Waveforms of dv/dt and Switching Time MGD623S-DSE Rev.1.1 SANKEN ELCTRIC CO., LTD. Jul. 05, 2017 http://www.sanken-ele.co.jp/en © SANKEN ELECTRIC CO., LTD. 2015 4 MGD623S Rating and Characteristic Curves 1000 1000 Collector Current, IC (A) Collector Current, IC (A) 10 μs 100 10 1 100 100 μs 10 1 IGBT, single pulse, TJ = 125 °C IGBT, single pulse, TJ = 25 °C 0.1 1 10 100 0.1 1000 1 Collector–Emitter Voltage, VCE (V) Figure 2. 10 100 1000 Collector–Emitter Voltage, VCE (V) IGBT Reverse Bias Safe Operating Area Figure 3. IGBT Safe Operating Area 60 200 Collector Current, IC (A) Power Dissipation, PD (W) 50 150 100 40 30 20 50 10 TJ < 150 °C TJ < 150 °C 0 0 25 50 75 100 125 150 25 Power Dissipation vs. Case Temperature 75 100 125 150 Case Temperature, TC (°C) Case Temperature, TC (°C) Figure 4. 50 Figure 5. MGD623S-DSE Rev.1.1 SANKEN ELCTRIC CO., LTD. Jul. 05, 2017 http://www.sanken-ele.co.jp/en © SANKEN ELECTRIC CO., LTD. 2015 Collector Current vs. Case Temperature 5 MGD623S 100 100 TJ = 125 °C TJ = 25 °C VGE = 15 V 80 VGE = 10 V VGE = 20 V Collector Current, IC (A) Collector Current, IC (A) 80 VGE = 15 V 60 VGE = 8 V 40 20 VGE = 20 V VGE = 10 V 60 VGE = 8 V 40 20 VGE = 7 V VGE = 7 V 0 0 0 1 2 3 4 5 0 1 Collector–Emitter Voltage, VCE (V) Figure 6. 3 4 5 Collector–Emitter Voltage, VCE (V) Output Characteristics (TJ = 25 °C) Figure 7. 100 Output Characteristics (TJ = 125 °C) Collector-Emitter Saturation, VCE (sat) (V) 3.0 VCE = 5 V 80 Collector Current, IC (A) 2 60 40 TJ = 125 °C TJ = 25 °C 20 VGE = 15 V IC = 100 A 2.5 IC = 50 A 2.0 1.5 IC = 30 A 1.0 0 0 5 10 15 -50 -25 Transfer Characteristics 25 50 75 100 125 150 Junction Temperature, TJ (°C) Gate–Emitter Voltage, VGE (V) Figure 8. 0 Figure 9. MGD623S-DSE Rev.1.1 SANKEN ELCTRIC CO., LTD. Jul. 05, 2017 http://www.sanken-ele.co.jp/en © SANKEN ELECTRIC CO., LTD. 2015 Saturation Voltage vs. Junction Temperature 6 MGD623S Gate Threshold Voltage (V) at VCE = 10 V, IC = 1 mA 7 10000 6 Cies Capacitance (pF) 1000 5 Coes 100 4 f = 1 MHz, VGE = 0 V 3 -50 -25 0 25 50 75 10 100 125 150 0 Junction Temperature, TJ (°C) Figure 10. Cres 10 20 30 40 50 Collector–Emitter Voltage, VCE (V) Gate Threshold Voltage vs. Junction Temperature Figure 11. Capacitance Characteristics 1000 20 td(off) Switching Time (ns) Gate -Emitter Voltage, VGE (V) IC = 50 A 10 VCE ≈ 300 V tf tr 100 td(on) Inductive load, IC = 50 A, VCE = 300 V, VGE = 15 V, RG = 39 Ω 10 0 0 20 40 60 25 Typical Gate Charge 75 100 125 150 Junction Temperature, TJ (°C) Gate Charge, Qg (nC) Figure 12. 50 Figure 13. MGD623S-DSE Rev.1.1 SANKEN ELCTRIC CO., LTD. Jul. 05, 2017 http://www.sanken-ele.co.jp/en © SANKEN ELECTRIC CO., LTD. 2015 Switching Time vs. Junction Temperature 7 MGD623S 1000 1000 td(off) tf Switching Time (ns) Switching Time (ns) td(off) tf 100 td(on) tr 100 td(on) Inductive load, IC = 50 A, VCE = 300 V, VGE = 15 V, TJ = 125 °C Inductive load, VCE = 300 V, VGE = 15 V, RG = 39 Ω, TJ = 125 °C tr 10 10 1 10 10 100 100 Gate Resistor, RG (Ω) Collector Current, IC (A) Figure 14. Switching Time vs. Collector Current Figure 15. 8 16 Inductive load, IC = 50 A, VCE = 300 V, VGE = 15 V, RG = 39 Ω Inductive load, VCE = 300 V, VGE = 15 V, RG = 39 Ω, TJ = 125 °C 14 Eon + Eoff Eon + Eoff 12 Switching Loss (mJ) 6 Switching Loss (mJ) Switching Time vs. Gate Resistor Eon 4 Eoff 2 10 Eon 8 6 Eoff 4 2 0 0 25 50 75 100 125 150 0 Junction Temperature, TJ (°C) Figure 16. Switching Loss vs. Junction Temperature 20 40 60 80 100 Collector Current, IC (A) Figure 17. MGD623S-DSE Rev.1.1 SANKEN ELCTRIC CO., LTD. Jul. 05, 2017 http://www.sanken-ele.co.jp/en © SANKEN ELECTRIC CO., LTD. 2015 Switching Loss vs. Collector Current 8 MGD623S 10 100 Inductive load, IC = 50 A, VCE = 300 V, VGE = 15 V, TJ = 125 °C Eon + Eoff 6 Eon 4 Eoff 2 80 Forward Current, IF (A) Switching Loss (mJ) 8 60 40 TJ = 125 °C 20 TJ = 25 °C 0 0 10 20 30 40 50 60 70 80 90 100 0.0 0.5 Gate Resistor, RG (Ω) Figure 18. 1.0 1.5 2.0 2.5 3.0 Forward Voltage, VF (V) Switching Loss vs. Gate Resistor Figure 19. Diode Forward Characteristics Forward Voltage, VF (V) 2 IF = 60 A IF = 30 A 1 IF = 10 A 0 -50 -25 0 25 50 75 100 125 150 Junction Temperature, TJ (°C) Figure 20. Diode Forward Voltage vs. Junction Temperature MGD623S-DSE Rev.1.1 SANKEN ELCTRIC CO., LTD. Jul. 05, 2017 http://www.sanken-ele.co.jp/en © SANKEN ELECTRIC CO., LTD. 2015 9 MGD623S 10 Thermal Resistance (°C/W) Diode 1 IGBT 0.1 0.01 TC = 25 °C, single pulse, VCE < 5 V 0.001 1μ 10 μ 100 μ 1m 10 m 100 m 1 10 100 Pulse Width (s) Figure 21. Transient Thermal Resistance MGD623S-DSE Rev.1.1 SANKEN ELCTRIC CO., LTD. Jul. 05, 2017 http://www.sanken-ele.co.jp/en © SANKEN ELECTRIC CO., LTD. 2015 10 MGD623S Physical Dimension ● TO3P-3L 4.8 ±0.2 2 ±0.1 +0.2 1.7 -0.3 2.15 +0.2 -0.1 3.15 +0.2 -0.1 1.05 +0.2 -0.1 5.45 ±0.1 (Roots of pins) (20.5) 3.4 3.9 19.9 ±0.3 Gate burr 14.9 ±0.3 Gate burr φ3.2 ±0.1 15.6 ±0.3 0.65 +0.2 -0.1 5.45 ±0.1 (Roots of pins) 15.8 ±0.3 0.5 0.5 Plan view 1 2 0.5 0.5 Side view 3 NOTES: - Dimensions in millimeters Maximum gate burr height is 0.3 mm Bare lead frame: Pb-free (RoHS compliant) When soldering the products, be sure to minimize the working time within the following limits: Flow: 260 ± 5 °C / 10 ± 1 s, 2 times Soldering iron: 380 ± 10 °C / 3.5 ± 0.5 s, 1 time (Soldering should be at a distance of at least 1.5 mm from the body of the product.) - Recommended screw torque: 0.686 N∙m to 0.882 N∙m (7 kgf∙cm to 9 kgf∙cm) MGD623S-DSE Rev.1.1 SANKEN ELCTRIC CO., LTD. Jul. 05, 2017 http://www.sanken-ele.co.jp/en © SANKEN ELECTRIC CO., LTD. 2015 11 MGD623S Marking Diagram MGD623S Part Number YM DD Lot Number Y is the last digit of the year of manufacture (0 to 9) M is the month of the year (1 to 9, O, N, or D) DD is the date of the month (01 to 31) (1) (2) (3) MGD623S-DSE Rev.1.1 SANKEN ELCTRIC CO., LTD. Jul. 05, 2017 http://www.sanken-ele.co.jp/en © SANKEN ELECTRIC CO., LTD. 2015 12 MGD623S Important Notes ● All data, illustrations, graphs, tables and any other information included in this document (the ―Information‖) as to Sanken’s products listed herein (the ―Sanken Products‖) are current as of the date this document is issued. The Information is subject to any change without notice due to improvement of the Sanken Products, etc. Please make sure to confirm with a Sanken sales representative that the contents set forth in this document reflect the latest revisions before use. ● The Sanken Products are intended for use as components of general purpose electronic equipment or apparatus (such as home appliances, office equipment, telecommunication equipment, measuring equipment, etc.). Prior to use of the Sanken Products, please put your signature, or affix your name and seal, on the specification documents of the Sanken Products and return them to Sanken. When considering use of the Sanken Products for any applications that require higher reliability (such as transportation equipment and its control systems, traffic signal control systems or equipment, disaster/crime alarm systems, various safety devices, etc.), you must contact a Sanken sales representative to discuss the suitability of such use and put your signature, or affix your name and seal, on the specification documents of the Sanken Products and return them to Sanken, prior to the use of the Sanken Products. The Sanken Products are not intended for use in any applications that require extremely high reliability such as: aerospace equipment; nuclear power control systems; and medical equipment or systems, whose failure or malfunction may result in death or serious injury to people, i.e., medical devices in Class III or a higher class as defined by relevant laws of Japan (collectively, the ―Specific Applications‖). Sanken assumes no liability or responsibility whatsoever for any and all damages and losses that may be suffered by you, users or any third party, resulting from the use of the Sanken Products in the Specific Applications or in manner not in compliance with the instructions set forth herein. ● In the event of using the Sanken Products by either (i) combining other products or materials or both therewith or (ii) physically, chemically or otherwise processing or treating or both the same, you must duly consider all possible risks that may result from all such uses in advance and proceed therewith at your own responsibility. ● Although Sanken is making efforts to enhance the quality and reliability of its products, it is impossible to completely avoid the occurrence of any failure or defect or both in semiconductor products at a certain rate. You must take, at your own responsibility, preventative measures including using a sufficient safety design and confirming safety of any equipment or systems in/for which the Sanken Products are used, upon due consideration of a failure occurrence rate and derating, etc., in order not to cause any human injury or death, fire accident or social harm which may result from any failure or malfunction of the Sanken Products. Please refer to the relevant specification documents and Sanken’s official website in relation to derating. ● No anti-radioactive ray design has been adopted for the Sanken Products. ● The circuit constant, operation examples, circuit examples, pattern layout examples, design examples, recommended examples, all information and evaluation results based thereon, etc., described in this document are presented for the sole purpose of reference of use of the Sanken Products. ● Sanken assumes no responsibility whatsoever for any and all damages and losses that may be suffered by you, users or any third party, or any possible infringement of any and all property rights including intellectual property rights and any other rights of you, users or any third party, resulting from the Information. ● No information in this document can be transcribed or copied or both without Sanken’s prior written consent. ● Regarding the Information, no license, express, implied or otherwise, is granted hereby under any intellectual property rights and any other rights of Sanken. ● Unless otherwise agreed in writing between Sanken and you, Sanken makes no warranty of any kind, whether express or implied, including, without limitation, any warranty (i) as to the quality or performance of the Sanken Products (such as implied warranty of merchantability, or implied warranty of fitness for a particular purpose or special environment), (ii) that any Sanken Product is delivered free of claims of third parties by way of infringement or the like, (iii) that may arise from course of performance, course of dealing or usage of trade, and (iv) as to the Information (including its accuracy, usefulness, or reliability). ● In the event of using the Sanken Products, you must use the same after carefully examining all applicable environmental laws and regulations that regulate the inclusion or use or both of any particular controlled substances, including, but not limited to, the EU RoHS Directive, so as to be in strict compliance with such applicable laws and regulations. ● You must not use the Sanken Products or the Information for the purpose of any military applications or use, including but not limited to the development of weapons of mass destruction. In the event of exporting the Sanken Products or the Information, or providing them for non-residents, you must comply with all applicable export control laws and regulations in each country including the U.S. Export Administration Regulations (EAR) and the Foreign Exchange and Foreign Trade Act of Japan, and follow the procedures required by such applicable laws and regulations. ● Sanken assumes no responsibility for any troubles, which may occur during the transportation of the Sanken Products including the falling thereof, out of Sanken’s distribution network. ● Although Sanken has prepared this document with its due care to pursue the accuracy thereof, Sanken does not warrant that it is error free and Sanken assumes no liability whatsoever for any and all damages and losses which may be suffered by you resulting from any possible errors or omissions in connection with the Information. ● Please refer to our official website in relation to general instructions and directions for using the Sanken Products, and refer to the relevant specification documents in relation to particular precautions when using the Sanken Products. ● All rights and title in and to any specific trademark or tradename belong to Sanken and such original right holder(s). DSGN-CEZ-16003 MGD623S-DSE Rev.1.1 SANKEN ELCTRIC CO., LTD. Jul. 05, 2017 http://www.sanken-ele.co.jp/en © SANKEN ELECTRIC CO., LTD. 2015 13