600 V High Voltage 3-phase Motor Drivers
SCM1270MF Series
Data Sheet
Description
Package
The SCM1270MF series are high voltage 3-phase
motor drivers in which transistors, pre-drive circuits, and
bootstrap circuits (diodes and resistors) are highly
integrated.
These products can run on a 3-shunt current detection
system and optimally control the inverter systems of
medium-capacity motors that require universal input
standards.
DIP33
Pin Pitch: 1.27 mm
Mold Dimensions: 47 mm × 19 mm × 4.4 mm
Features
● Temperature Sensing Function
● In Case of Abnormal Operaion, All Outputs Shut
Down via the FO1, FO3, and SD Pins Connected
Together
● Built-in Bootstrap Diodes with Current Limiting
Resistors (22 Ω)
● CMOS-compatible Input (3.3 V or 5 V)
● Pb-free (RoHS Compliant)
● Isolation Voltage: 2500 V (for 1 min)
UL-recognized Component (File No.: E118037)
● Fault Signal Output at Protection Activation
● Protections Include:
Undervoltage Lockout for Power Supply
High-side (UVLO_VB): Auto-restart
Low-side (UVLO_VCC): Auto-restart
Overcurrent Protection (OCP): Auto-restart
Simultaneous On-state Prevention: Auto-restart
Typical Application
VCC
VFO
U1
SCM1270MF Series
RFO
1
INT
LS1 33
FO1
Not to scale
Selection Guide
● Power Device: IGBT + FRD (600 V)
IO
Part Number
15 A
SCM1272MF
20 A
SCM1274MF
30 A
SCM1276MF
Applications
For motor drives such as:
●
●
●
●
●
Refrigerator Compressor Motor
Air Conditioner Compressor Motor
Washing Machine Main Motor
Fan Motor
Pump Motor
2 OCP1
CFO
3 LIN1
LIN1
4 COM1
MIC1
U 32
5 HIN1
HIN1
6 VCC1
31
Controller
power
supply
7
CBOOT1
DZVT
VB1
8 HS1
LS2
9
SD
10 VT
11 LIN2
12 COM2
13 HIN2
Thermal
LIN2
RVT
HIN2
30
V
MIC2
29
M
Controller
14 VCC2
28
15
CBOOT2
VB2
16 HS2
17
LS3
FO3
27
18 OCP3
19 LIN3
LIN3
20 COM3
MIC3
W
26
21 HIN3
HIN3
22 VCC3
VDC
VBB
25
VB3
24 HS3
23
CBOOT3
RO
A/D
CO
DRS
RS
COM
SCM1270MF-DSE Rev.2.2
SANKEN ELECTRIC CO., LTD.
Jul. 19, 2022
https://www.sanken-ele.co.jp/en
© SANKEN ELECTRIC CO., LTD. 2017
1
SCM1270MF Series
Contents
Description ------------------------------------------------------------------------------------------------------ 1
Contents --------------------------------------------------------------------------------------------------------- 2
1. Absolute Maximum Ratings----------------------------------------------------------------------------- 4
2. Recommended Operating Conditions ----------------------------------------------------------------- 5
3. Electrical Characteristics -------------------------------------------------------------------------------- 6
3.1. Characteristics of Control Parts------------------------------------------------------------------ 6
3.2. Bootstrap Diode Characteristics ----------------------------------------------------------------- 7
3.3. Thermal Resistance Characteristics ------------------------------------------------------------- 7
3.4. Transistor Characteristics ------------------------------------------------------------------------- 8
3.4.1. SCM1272MF ----------------------------------------------------------------------------------- 8
3.4.2. SCM1274MF ----------------------------------------------------------------------------------- 9
3.4.3. SCM1276MF ----------------------------------------------------------------------------------- 9
4. Mechanical Characteristics --------------------------------------------------------------------------- 10
5. Insulation Distance -------------------------------------------------------------------------------------- 10
6. Truth Table ----------------------------------------------------------------------------------------------- 11
7. Block Diagram ------------------------------------------------------------------------------------------- 12
8. Pin Configuration Definitions ------------------------------------------------------------------------- 13
9. Typical Applications ------------------------------------------------------------------------------------ 14
10. Physical Dimensions ------------------------------------------------------------------------------------ 16
10.1. Leadform 2552 ------------------------------------------------------------------------------------- 16
10.2. Leadform 2557 (Long Lead Type) ------------------------------------------------------------- 17
10.3. Reference PCB Hole Sizes ----------------------------------------------------------------------- 18
11. Marking Diagram --------------------------------------------------------------------------------------- 18
12. Functional Descriptions -------------------------------------------------------------------------------- 19
12.1. Turning On and Off the IC ---------------------------------------------------------------------- 19
12.2. Pin Descriptions ----------------------------------------------------------------------------------- 19
12.2.1. U, V, and W----------------------------------------------------------------------------------- 19
12.2.2. VB1, VB2, and VB3 ------------------------------------------------------------------------- 19
12.2.3. HS1, HS2, and HS3 ------------------------------------------------------------------------- 20
12.2.4. VCC1, VCC2, and VCC3 ------------------------------------------------------------------ 20
12.2.5. COM1, COM2, and COM3---------------------------------------------------------------- 20
12.2.6. HIN1, HIN2, and HIN3; LIN1, LIN2, and LIN3 -------------------------------------- 20
12.2.7. VBB -------------------------------------------------------------------------------------------- 21
12.2.8. LS1, LS2, and LS3 -------------------------------------------------------------------------- 21
12.2.9. OCP1 and OCP3----------------------------------------------------------------------------- 22
12.2.10. FO1 (U-phase) and FO3 (W-phase) ------------------------------------------------------ 22
12.2.11. SD (V-phase) --------------------------------------------------------------------------------- 23
12.2.12. VT ---------------------------------------------------------------------------------------------- 23
12.3. Temperature Sensing Function ----------------------------------------------------------------- 23
12.4. Protection Functions ------------------------------------------------------------------------------ 24
12.4.1. Fault Signal Output ------------------------------------------------------------------------- 24
12.4.2. Shutdown Signal Input --------------------------------------------------------------------- 24
12.4.3. Undervoltage Lockout for Power Supply (UVLO) ----------------------------------- 24
12.4.4. Overcurrent Protection (OCP) ----------------------------------------------------------- 25
12.4.5. Simultaneous On-state Prevention ------------------------------------------------------- 27
13. Design Notes ---------------------------------------------------------------------------------------------- 28
13.1. PCB Pattern Layout ------------------------------------------------------------------------------ 28
13.2. Considerations in Heatsink Mounting -------------------------------------------------------- 28
SCM1270MF-DSE Rev.2.2
SANKEN ELECTRIC CO., LTD.
Jul. 19, 2022
https://www.sanken-ele.co.jp/en
© SANKEN ELECTRIC CO., LTD. 2017
2
SCM1270MF Series
13.3. Considerations in IC Characteristics Measurement --------------------------------------- 28
14. Calculating Power Losses and Estimating Junction Temperature ---------------------------- 29
14.1. IGBT Steady-state Loss, PON -------------------------------------------------------------------- 29
14.2. IGBT Switching Loss, PSW ----------------------------------------------------------------------- 30
14.3. Estimating Junction Temperature of IGBT -------------------------------------------------- 30
15. Performance Curves ------------------------------------------------------------------------------------ 31
15.1. Transient Thermal Resistance Curves -------------------------------------------------------- 31
15.2. Performance Curves of Control Parts--------------------------------------------------------- 32
15.3. Performance Curves of Output Parts --------------------------------------------------------- 37
15.3.1. Output Transistor Performance Curves ------------------------------------------------ 37
15.3.2. Switching Loss Curves --------------------------------------------------------------------- 39
15.4. Allowable Effective Current Curves ----------------------------------------------------------- 42
15.4.1. SCM1272MF --------------------------------------------------------------------------------- 42
15.4.2. SCM1274MF --------------------------------------------------------------------------------- 43
15.4.3. SCM1276MF --------------------------------------------------------------------------------- 44
15.5. Short Circuit SOAs (Safe Operating Areas) ------------------------------------------------- 45
15.5.1. SCM1272MF --------------------------------------------------------------------------------- 45
15.5.2. SCM1274MF --------------------------------------------------------------------------------- 45
15.5.3. SCM1276MF --------------------------------------------------------------------------------- 46
16. Pattern Layout Example ------------------------------------------------------------------------------- 47
17. Typical Motor Driver Application ------------------------------------------------------------------- 49
Important Notes ---------------------------------------------------------------------------------------------- 50
SCM1270MF-DSE Rev.2.2
SANKEN ELECTRIC CO., LTD.
Jul. 19, 2022
https://www.sanken-ele.co.jp/en
© SANKEN ELECTRIC CO., LTD. 2017
3
SCM1270MF Series
1.
Absolute Maximum Ratings
Current polarities are defined as follows: current going into the IC (sinking) is positive current (+); current coming
out of the IC (sourcing) is negative current (−).
Unless specifically noted, TA = 25 °C.
Parameter
Symbol
Conditions
Rating
Unit
Remarks
Main Supply Voltage
VBB–LSx
VDC
450
V
(DC)
Main Supply Voltage
VDC(SURGE) VBB–LSx
500
V
(Surge)
IGBT Breakdown
VCC = 15 V, IC = 1 mA,
VCES
600
V
VIN = 0 V
Voltage
VCCx–COMx
VCC
20
Logic Supply Voltage
V
VBx–HSx
VBS
20
15
SCM1272MF
TC = 25 °C, TJ < 150 °C
Output Current(1)
IO
20
A
SCM1274MF
30
SCM1276MF
SCM1272MF
TC = 25 °C,
30
SCM1274MF
pulse width ≤ 1ms,
Output Current (Pulse)
IOP
A
single pulse
45
SCM1276MF
V
−0.5 to 7
V
−0.5 to 7
V
−10 to 5
V
TC(OP)
−30 to 100
°C
TJ
TSTG
150
−40 to 150
°C
°C
2500
V
VIN
FOx Pin Voltage
VFO
SD Pin Voltage
VSD
OCPx Pin Voltage
VOCP
Operating Case
Temperature(2)
Junction Temperature(3)
Storage Temperature
Isolation Voltage(4)
HINx–COMx,
LINx–COMx
FO1–COM1,
FO3–COM3
SD–COM2
OCP1–COM1,
OCP3–COM3
−0.5 to 7
Input Voltage
VISO(RMS)
Between surface of
heatsink side and each
pin; AC, 60 Hz, 1 min
(1)
Should be derated depending on an actual case temperature. See Section 15.4.
Refers to a case temperature measured during IC operation.
(3)
Refers to the junction temperature of each chip built in the IC, including the control MIC, transistors, and
freewheeling diodes.
(4)
Refers to voltage conditions to be applied between all of the pins and the case. All the pins have to be shorted.
(2)
SCM1270MF-DSE Rev.2.2
SANKEN ELECTRIC CO., LTD.
Jul. 19, 2022
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© SANKEN ELECTRIC CO., LTD. 2017
4
SCM1270MF Series
2.
Recommended Operating Conditions
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
VDC
COM1 = COM2 = COM3,
VBB–COM
—
300
400
V
VCC
VCCx–COMx
13.5
—
16.5
V
VBS
VBx–HSx
13.5
—
16.5
V
VIN
0
—
5.5
V
tIN(MIN)ON
0.5
—
—
μs
tIN(MIN)OFF
0.5
—
—
μs
Dead Time of Input Signal
tDEAD
1.5
—
—
μs
FOx Pin Pull-up Resistor
RFO
1
—
22
kΩ
FOx Pin Pull-up Voltage
FOx Pin Noise Filter
Capacitor
VT Pin Pull-down
Resistor
Bootstrap Capacitor
VFO
3.0
—
5.5
V
CFO
—
—
1000
pF
RVT
10
—
—
kΩ
10
—
220
μF
12
—
—
Main Supply Voltage
Logic Supply Voltage
Input Voltage
(HINx, LINx, FOx, and SD)
Minimum Input Pulse
Width
CBOOT
IOP ≤ 45 A
Shunt Resistor(1)
RS
RC Filter Resistor
mΩ
IOP ≤ 30 A
18
—
—
RO
(2)
—
—
100
Ω
RC Filter Capacitor
CO
(2)
—
—
8200
pF
PWM Carrier Frequency
fC
—
—
20
kHz
(1)
(2)
Remarks
SCM1276MF
SCM1272MF
SCM1274MF
Should be a low-inductance resistor.
Requires the time constants that satisfy the following equation (see also Section 12.4.4): R O × CO < 0.82 μs.
SCM1270MF-DSE Rev.2.2
SANKEN ELECTRIC CO., LTD.
Jul. 19, 2022
https://www.sanken-ele.co.jp/en
© SANKEN ELECTRIC CO., LTD. 2017
5
SCM1270MF Series
3.
Electrical Characteristics
Current polarities are defined as follows: current going into the IC (sinking) is positive current (+); current coming
out of the IC (sourcing) is negative current (−).
Unless otherwise specified, TA = 25 °C, VCC = 15 V.
3.1.
Characteristics of Control Parts
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
Remarks
Power Supply Operation
Logic Operation Start
Voltage
VCC(ON)
VCCx–COMx
10.5
11.5
12.5
V
VBS(ON)
VBx–HSx
10.5
11.5
12.5
V
Logic Operation Stop
Voltage
VCC(OFF)
VCCx–COMx
10.0
11.0
12.0
V
VBS(OFF)
VBx–HSx
VCC1 = VCC2 = VCC3,
COM1 = COM2 = COM3,
VCC pin current in 3-phase
operation
VBx–HSx = 15 V,
HINx = 5 V; VBx pin current
in 1-phase operation
10.0
11.0
12.0
V
—
3
—
mA
—
140
—
μA
VIH
1.5
2.0
2.5
V
VIL
1.0
1.5
2.0
V
ICC
Logic Supply Current
IBS
Input Signal
High Level Input Threshold
Voltage
(HINx, LINx, FOx, and SD)
Low Level Input Threshold
Voltage
(HINx, LINx, FOx, and SD)
High Level Input Current
(HINx and LINx)
Low Level Input Current
(HINx and LINx)
IIH
VIN = 5 V
—
230
500
μA
IIL
VIN = 0 V
—
—
2
μA
VFOL
VFO = 5 V, RFO = 10 kΩ
—
—
0.5
V
VFOH
VFO = 5 V, RFO = 10 kΩ
4.8
—
—
V
VTRIP
0.46
0.50
0.54
V
OCP Hold Time
tP
20
26
—
μs
OCP Blanking Time
tBK
—
370
—
ns
135
300
—
ns
2.69
2.75
2.81
V
Fault Signal Output
FOx Pin Voltage at Fault
Signal Output
FOx Pin Voltage in Normal
Operation
Protection
OCP Threshold Voltage
SD Pin Filtering Time
Temperature Sensing
Voltage*
VTRIP = 1 V
tFIL(SD)
VT
TJ(MIC) = 125 °C,
VRT = 10 kΩ
* Determined by the junction temperature of the control parts, not of the output transistors.
SCM1270MF-DSE Rev.2.2
SANKEN ELECTRIC CO., LTD.
Jul. 19, 2022
https://www.sanken-ele.co.jp/en
© SANKEN ELECTRIC CO., LTD. 2017
6
SCM1270MF Series
3.2.
Bootstrap Diode Characteristics
Parameter
Symbol
Bootstrap Diode Leakage Current
Bootstrap Diode Forward
Voltage
Bootstrap Diode Series Resistor
ILBD
VFB
3.3.
Conditions
Min.
Typ.
Max.
Unit
VR = 600 V
—
—
10
μA
IFB = 0.15 A
—
1.1
1.3
V
17.6
22.0
26.4
Ω
Min.
Typ.
Max.
Unit
—
—
3
°C/W
—
—
4
°C/W
RBOOT
Remarks
Thermal Resistance Characteristics
Parameter
Symbol
R(J-C)Q(2)
Junction-to-Case Thermal
Resistance(1)
R(J-C)F(3)
Conditions
1 element operating
(IGBT)
1 element operating
(freewheeling diode)
Remarks
(1)
Refers to a case temperature at the measurement point described in Figure 3-1, below.
Refers to steady-state thermal resistance between the junction of the built-in transistors and the case. For transient
thermal characteristics, see Section 15.1.
(3)
Refers to steady-state thermal resistance between the junction of the built-in freewheeling diodes and the case.
(2)
24
1
25
33
Measurement point
Figure 3-1.
Case Temperature Measurement Point
SCM1270MF-DSE Rev.2.2
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Jul. 19, 2022
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SCM1270MF Series
3.4.
Transistor Characteristics
HINx/
LINx
0
trr
ton
td(on) tr
ID/
IC
toff
td(off) tf
90%
10%
0
VDS/
VCE
0
Figure 3-2.
Switching Characteristics Definitions
3.4.1. SCM1272MF
Parameter
Collector-to-Emitter Leakage
Current
Collector-to-Emitter Saturation
Voltage
Diode Forward Voltage
Symbol
Min.
Typ.
Max.
Unit
VCE = 600 V, VIN = 0 V
—
—
1
mA
VCE(SAT)
IC = 15 A, VIN = 5 V
—
1.7
2.2
V
VF
IF = 15 A, VIN = 0 V
—
1.75
2.2
V
—
100
—
ns
—
700
—
ns
—
110
—
ns
—
1200
—
ns
tf
—
100
—
ns
trr
—
100
—
ns
—
800
—
ns
—
120
—
ns
—
1200
—
ns
—
100
—
ns
ICES
Conditions
High-side Switching
Diode Reverse Recovery Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
trr
td(on)
tr
td(off)
VDC = 300 V, IC = 15 A,
VIN = 0→5 V or 5→0 V,
TJ = 25 °C,
inductive load
Low-side Switching
Diode Reverse Recovery Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
td(on)
tr
td(off)
VDC = 300 V, IC = 15 A,
VIN = 0→5 V or 5→0 V,
TJ = 25 °C,
inductive load
tf
SCM1270MF-DSE Rev.2.2
SANKEN ELECTRIC CO., LTD.
Jul. 19, 2022
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© SANKEN ELECTRIC CO., LTD. 2017
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SCM1270MF Series
3.4.2. SCM1274MF
Parameter
Collector-to-Emitter Leakage
Current
Collector-to-Emitter Saturation
Voltage
Diode Forward Voltage
Symbol
Min.
Typ.
Max.
Unit
VCE = 600 V, VIN = 0 V
—
—
1
mA
VCE(SAT)
IC = 20 A, VIN = 5 V
—
1.7
2.2
V
VF
IF = 20 A, VIN = 0 V
—
1.9
2.4
V
—
100
—
ns
—
900
—
ns
—
160
—
ns
—
1300
—
ns
tf
—
120
—
ns
trr
—
100
—
ns
—
900
—
ns
—
190
—
ns
—
1300
—
ns
—
120
—
ns
Min.
Typ.
Max.
Unit
VCE = 600 V, VIN = 0 V
—
—
1
mA
VCE(SAT)
IC = 30 A, VIN = 5 V
—
1.7
2.2
V
VF
IF = 30 A, VIN = 0 V
—
1.9
2.4
V
—
100
—
ns
—
800
—
ns
—
150
—
ns
—
1200
—
ns
tf
—
170
—
ns
trr
—
100
—
ns
—
800
—
ns
—
180
—
ns
—
1200
—
ns
—
190
—
ns
ICES
Conditions
High-side Switching
Diode Reverse Recovery Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
trr
td(on)
tr
td(off)
VDC = 300 V, IC = 20 A,
VIN = 0→5 V or 5→0 V,
TJ = 25 °C,
inductive load
Low-side Switching
Diode Reverse Recovery Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
td(on)
tr
td(off)
VDC = 300 V, IC = 20 A,
VIN = 0→5 V or 5→0 V,
TJ = 25 °C,
inductive load
tf
3.4.3. SCM1276MF
Parameter
Collector-to-Emitter Leakage
Current
Collector-to-Emitter Saturation
Voltage
Diode Forward Voltage
Symbol
ICES
Conditions
High-side Switching
Diode Reverse Recovery Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
trr
td(on)
tr
td(off)
VDC = 300 V, IC = 30 A,
VIN = 0→5 V or 5→0 V,
TJ = 25 °C,
inductive load
Low-side Switching
Diode Reverse Recovery Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
td(on)
tr
td(off)
VDC = 300 V, IC = 30 A,
VIN = 0→5 V or 5→0 V,
TJ = 25 °C,
inductive load
tf
SCM1270MF-DSE Rev.2.2
SANKEN ELECTRIC CO., LTD.
Jul. 19, 2022
https://www.sanken-ele.co.jp/en
© SANKEN ELECTRIC CO., LTD. 2017
9
SCM1270MF Series
4.
Mechanical Characteristics
Parameter
Conditions
Min.
Typ.
Max.
Unit
Heatsink Mounting
*
0.588
—
0.784
N∙m
Screw Torque
Flatness of Heatsink
See Figure 4-1.
0
—
200
μm
Attachment Area
Package Weight
—
11.8
—
g
* Requires using a metric screw of M3 and a plain washer of 7.0 mm (φ). For more on screw tightening, see Section
13.2.
Heatsink
Measurement position
-+
-
+
Heatsink
Figure 4-1.
5.
Flatness Measurement Position
Insulation Distance
Parameter
Clearance
Conditions
Min.
Typ.
Max.
Unit
Between heatsink* and leads.
See Figure 5-1.
2.0
—
2.5
mm
Creepage
3.86
—
4.26
mm
* Refers to when a heatsink to be mounted is flat. If your application requires a clearance exceeding the maximum
distance given above, use an alternative (e.g., a convex heatsink) that will meet the target requirement.
Creepage
Clearance
Heatsink
Figure 5-1.
Insulation Distance Definitions
SCM1270MF-DSE Rev.2.2
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Jul. 19, 2022
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10
SCM1270MF Series
6.
Truth Table
Table 6-1 is a truth table that provides the logic level definitions of operation modes.
In the case where HINx and LINx pin signals in each phase are high at the same time, the simultaneous on-state
prevention sets both the high- and low-side transistors off.
After the IC recovers from a UVLO_VCC condition, the high- and low-side transistors resume switching, according
to the input logic levels of the HINx and LINx signals (level-triggered).
After the IC recovers from a UVLO_VB condition, the high-side transistors resume switching at the next rising edge
of an HINx signal (edge-triggered).
Table 6-1. Truth Table for Operation Modes
Mode
Normal Operation
Shutdown Signal Input
FO1/FO3/SD = L
Undervoltage Lockout for
High-side Power Supply
(UVLO_VB)
Undervoltage Lockout for
Low-side Power Supply
(UVLO_VCC)
Overcurrent Protection (OCP)
HINx
LINx
High-side Transistor
Low-side Transistor
L
L
OFF
OFF
H
L
ON
OFF
L
H
OFF
ON
H
H
OFF
OFF
L
L
OFF
OFF
H
L
OFF
OFF
L
H
OFF
OFF
H
H
OFF
OFF
L
L
OFF
OFF
H
L
OFF
OFF
L
H
OFF
ON
H
H
OFF
OFF
L
L
OFF
OFF
H
L
OFF
OFF
L
H
OFF
OFF
H
H
OFF
OFF
L
L
OFF
OFF
H
L
OFF
OFF
L
H
OFF
OFF
H
H
OFF
OFF
SCM1270MF-DSE Rev.2.2
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Jul. 19, 2022
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11
SCM1270MF Series
7.
Block Diagram
MIC1
1
FO1
UVLO_VCC
Filter
3 µs
2 OCP1
3 LIN1
4 COM1
5 HIN1
6 VCC1
LS1 33
UVLO_VB
Level shift
Drive
circuit
HO1
Input logic
U 32
Simultaneous
on-state
prevention
OCP
Drive
circuit
Filter
370 ns
LO1
31
VB1
8 HS1
7
MIC2
9
10
SD
VT
11 LIN2
12 COM2
13 HIN2
14 VCC2
LS2
UVLO_VB
Filter
300 ns
Level shift
Drive
circuit
30
HO2
Input logic
V
29
Simultaneous
on-state
prevention
Drive
circuit
Temperature
sensing
LO2
28
VB2
16 HS2
15
MIC3
17
FO3
UVLO_VCC
Filter
3 µs
18 OCP3
19 LIN3
20 COM3
21 HIN3
22 VCC3
LS3
UVLO_VB
Level shift
Drive
circuit
HO3
Input logic
W
Simultaneous
on-state
prevention
OCP
Filter
370 ns
Drive
circuit
27
26
LO3
VBB
25
VB3
24 HS3
23
SCM1270MF-DSE Rev.2.2
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12
SCM1270MF Series
8.
Pin Configuration Definitions
Top view
1
24
1
33
24
25
Pin Number
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
Pin Name
FO1
OCP1
LIN1
COM1
HIN1
VCC1
VB1
HS1
SD
VT
LIN2
COM2
HIN2
VCC2
VB2
HS2
FO3
OCP3
LIN3
COM3
HIN3
VCC3
VB3
HS3
VBB
W
LS3
VBB
V
LS2
VBB
U
LS1
25
Description
U-phase fault signal output and shutdown signal input
Input for U-phase overcurrent protection
Logic input for U-phase low-side gate driver
U-phase logic ground
Logic input for U-phase high-side gate driver
U-phase logic supply voltage input
U-phase high-side floating supply voltage input
U-phase high-side floating supply ground
V-phase shutdown signal input
Temperature sensing voltage output
Logic input for V-phase low-side gate driver
V-phase logic ground
Logic input for V-phase high-side gate driver
V-phase logic supply voltage input
V-phase high-side floating supply voltage input
V-phase high-side floating supply ground
W-phase fault signal output and shutdown signal input
Input for W-phase overcurrent protection
Logic input for W-phase low-side gate driver
W-phase logic ground
Logic input for W-phase high-side gate driver
W-phase logic supply voltage input
W-phase high-side floating supply voltage input
W-phase high-side floating supply ground
Positive DC bus supply voltage
W-phase output
W-phase IGBT emitter
(Pin trimmed) positive DC bus supply voltage
V-phase output
V-phase IGBT emitter
(Pin trimmed) positive DC bus supply voltage
U-phase output
U-phase IGBT emitter
SCM1270MF-DSE Rev.2.2
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33
13
SCM1270MF Series
9.
Typical Applications
CR filters and Zener diodes should be added to your application as needed. This is to protect each pin against surge
voltages causing malfunctions, and to avoid the IC being used under the conditions exceeding the absolute maximum
ratings where critical damage is inevitable. Then, check all the pins thoroughly under actual operating conditions to
ensure that your application works flawlessly.
VCC
VFO
U1
SCM1270MF Series
RFO
1
INT
LS1 33
FO1
2 OCP1
CFO
3 LIN1
LIN1
4 COM1
MIC1
U 32
5 HIN1
6 VCC1
HIN1
31
Controller
power
supply
CBOOT1
DZVT
VB1
7
8 HS1
LS2
9
SD
30
10 VT
Thermal
11 LIN2
LIN2
12 COM2
RVT
V
MIC2
29
M
13 HIN2
HIN2
Controller
14 VCC2
28
VB2
16 HS2
15
CBOOT2
17
LS3
FO3
27
18 OCP3
19 LIN3
LIN3
20 COM3
MIC3
W
26
21 HIN3
HIN3
22 VCC3
VDC
VBB
25
VB3
24 HS3
23
CBOOT3
RO
A/D
CO
DRS
RS
COM
Figure 9-1.
Typical Application Using a Single Shunt Resistor
SCM1270MF-DSE Rev.2.2
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SCM1270MF Series
VCC
VFO
U1
SCM1270MF Series
RFO
1
INT
LS1 33
FO1
2 OCP1
CFO
3 LIN1
LIN1
4 COM1
MIC1
U 32
5 HIN1
6 VCC1
HIN1
31
Controller
power
supply
CBOOT1
DZVT
VB1
7
8 HS1
LS2
9
SD
30
10 VT
Thermal
11 LIN2
LIN2
12 COM2
RVT
V
MIC2
29
M
13 HIN2
HIN2
Controller
14 VCC2
28
CBOOT2
VB2
15
16 HS2
17
LS3
FO3
27
18 OCP3
19 LIN3
LIN3
20 COM3
MIC3
W
26
21 HIN3
HIN3
22 VCC3
VDC
VBB
25
VB3
24 HS3
23
CBOOT3
RO3
CO3
A/D
CO2
RO2
CO1 RO1
RS3
COM
DRS3 DRS2 DRS1
Figure 9-2.
RS1
RS2
Typical Application Using Three Shunt Resistors
SCM1270MF-DSE Rev.2.2
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SCM1270MF Series
10. Physical Dimensions
10.1. Leadform 2552
0.5
C
0.5
C
(2.6)
8xP5.1=40.8
4.4±0.3
1.2±0.2
+0.5
47±0.3
2 0
A
MAX1.2
(Root of pin)
(5゚)
φ3.2±0.15
15.95±0.5
11.45±0.5
19±0.3
12.25±0.5
17.25±0.5
A
(5゚)
B
43.3 ±0.3
B
2.08±0.2
11.2±0.5
5xP1.27=6.35
1.27
3.7
3.24
1.27
3.7
+0.2
D
2
+0.2
-0.1
B-B
+0.2
+0.2
0.5 -0.1
(11.6)
0.5 -0.1
C-C
(38.6)
+0.2
0.6 -0.1
0.5
D
(2.6)
3.7
0.5 -0.1
2.57
1.27
5xP1.27=6.35
+0.2
-0.1
5xP1.27=6.35
+0.2
0.7 -0.1
A-A
1.2
+0.2
-0.1
D-D
Unit : mm
SCM1270MF-DSE Rev.2.2
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SCM1270MF Series
10.2. Leadform 2557 (Long Lead Type)
(0.65)
0.6
(2.6)
C
0.6
C
8xP5.1=40.8
4.4±0.3
1.2 ±0.2
+0.2
47±0.3
MAX1.2
※
2 0
(Root of pin)
A
)
( 11°
0 to 0.5
Φ3.2 ±0.15
15.95 ±0.6
11.45 ±0.6
19 ±0.3
12.25 ±0.6
17.25 ±0.6
※
A
B
2.08±0.2
5xP1.27=6.35
5xP1.27=6.35
2.57
1.27
3.7
1.27
3.7
3.24
0 to 0.5
43.3 ±0.3
5xP1.27=6.35
(12°)
B
14 to 14.8
1.27
3.7
D
+0.2
D
0.5 -0.1
(2.6)
+0.2
0.5 -0.1
+0.2
2
+0.2
-0.1
B-B
+0.2
+0.2
0.5 -0.1
(11.5)
+0.2
0.7 -0.1
A-A
0.5 -0.1
C-C
(38.5)
0.6 -0.1
1.2
+0.2
-0.1
D-D
Unit : mm
SCM1270MF-DSE Rev.2.2
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Jul. 19, 2022
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© SANKEN ELECTRIC CO., LTD. 2017
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SCM1270MF Series
10.3. Reference PCB Hole Sizes
φ1.1
φ1.4
Pins 1 to 24
Pins 25 to 33
11. Marking Diagram
25
33
Branding Side
24
1
25
33
JAPAN
24
SCM127xMF
Control Number
YMDD
1
Lot Number:
Y is the last digit of the year of manufacture (0 to 9)
M is the month of the year (1 to 9, O, N, or D)
DD is the day of the month (01 to 31)
Part Number
SCM1270MF-DSE Rev.2.2
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Jul. 19, 2022
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SCM1270MF Series
12. Functional Descriptions
All the characteristic values given in this section are
typical values, unless they are specified as minimum or
maximum.
For pin descriptions, this section employs a notation
system that denotes a pin name with the arbitrary letter
“x”, depending on context. The U-, V-, and W-phases
are represented as the pin numbers 1, 2, and 3,
respectively. Thus, “the VBx pin” is used when referring
to any or all of the VB1, VB2, and VB3 pins. Also,
when different pin names are mentioned as a pair (e.g.,
“the VBx and HSx pins”), they are meant to be the pins
in the same phase.
12.1. Turning On and Off the IC
The procedures listed below provide recommended
startup and shutdown sequences. To turn on the IC
properly, do not apply any voltage on the VBB, HINx,
and LINx pins until the VCCx pin voltage has reached a
stable state (VCC(ON) ≥ 12.5 V).
It is required to fully charge bootstrap capacitors,
CBOOTx, at startup (see Section 12.2.2).
To turn off the IC, set the HINx and LINx pins to
logic low (or “L”), and then decrease the VCCx pin
voltage.
12.2. Pin Descriptions
CBOOTx (μF) > 800 × t L(OFF) (s)
(1)
10 μF ≤ CBOOTx ≤ 220 μF
(2)
In Equation (1), let tL(OFF) be the maximum off-time of
the low-side transistor (i.e., the non-charging time of
CBOOTx), measured in seconds.
Even while the high-side transistor is off, voltage
across the bootstrap capacitor keeps decreasing due to
power dissipation in the IC. When the VBx pin voltage
decreases to VBS(OFF) or less, the high-side undervoltage
lockout (UVLO_VB) starts operating (see Section
12.4.3.1).
Therefore, actual board checking should be done
thoroughly to validate that voltage across the VBx pin
maintains over 12.0 V (VBS > VBS(OFF)) during a
low-frequency operation such as a startup period.
As Figure 12-1 shows, a bootstrap diode, DBOOTx, and
a current-limiting resistor, RBOOTx, are internally placed
in series between the VCCx and VBx pins. Time
constant for the charging time of CBOOTx, τ, can be
computed by Equation (3):
τ = CBOOTx × R BOOTx ,
where CBOOTx is the optimized capacitance of the
bootstrap capacitor, and RBOOTx is the resistance of the
current-limiting resistor (22 Ω ± 20%).
U1
VB1
7
CP1
12.2.1. U, V, and W
These pins are the outputs of the three phases, and
serve as the connection terminals to the 3-phase motor.
The U, V, and W pins are internally connected to the
HS1, HS2, and HS3 pins, respectively.
HS1
DBOOT1 RBOOT1
CBOOT1
8
31
VCC
VBB
HO
6
VCC1
4
MIC1
U
COM1
32
Motor
LO
12.2.2. VB1, VB2, and VB3
These are the inputs of the high-side floating power
supplies for the individual phases. Voltages across the
VBx and HSx pins should be maintained within the
recommended range (i.e., the Logic Supply Voltage,
VBS) given in Section 2.
In each phase, a bootstrap capacitor, CBOOTx, should
be connected between the VBx and HSx pins. For proper
startup, turn on the low-side transistor first, then fully
charge the bootstrap capacitor, CBOOTx. For the
capacitance of the bootstrap capacitors, CBOOTx, choose
the values that satisfy Equations (1) and (2). Note that
capacitance tolerance and DC bias characteristics must
be taken into account when you choose appropriate
values for CBOOTx.
(3)
CDC VDC
LS1
Figure 12-1.
33
RS1
Bootstrap Circuit
Figure 12-2 shows an internal level-shifting circuit. A
high-side output signal, HOx, is generated according to
an input signal on the HINx pin. When an input signal
on the HINx pin transits from low to high (rising edge),
a “Set” signal is generated. When the HINx input signal
transits from high to low (falling edge), a “Reset” signal
is generated. These two signals are then transmitted to
the high-side by the level-shifting circuit and are input to
the SR flip-flop circuit. Finally, the SR flip-flop circuit
feeds an output signal, Q (i.e., HOx).
Figure 12-3 is a timing diagram describing how noise
or other detrimental effects will improperly influence the
SCM1270MF-DSE Rev.2.2
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SCM1270MF Series
level-shifting process. When a noise-induced rapid
voltage drop between the VBx and HSx pins
(“VBx–HSx”) occurs after the Set signal generation, the
next Reset signal cannot be sent to the SR flip-flop
circuit. And the state of an HOx signal stays logic high
(or “H”) because the SR flip-flop does not respond. With
the HOx state being held high (i.e., the high-side
transistor is in an on-state), the next LINx signal turns
on
the low-side
transistor
and causes
a
simultaneously-on condition, which may result in
critical damage to the IC. To protect the VBx pin against
such a noise effect, add a bootstrap capacitor, CBOOTx, in
each phase. CBOOTx must be placed near the IC and be
connected between the VBx and HSx pins with a
minimal length of traces.
To use an electrolytic capacitor, add a 0.01 μF to 0.1
μF bypass capacitor, CPx, in parallel near these pins used
for the same phase.
U1
VBx
S
Input
logic
HINx
Q
HOx
R
Set
Pulse
generator Reset
HSx
COMx
Figure 12-2.
12.2.4. VCC1, VCC2, and VCC3
These are the logic supply pins for the built-in control
MICs. The VCC1, VCC2, and VCC3 pins must be
externally connected on a PCB because they are not
internally connected. To prevent malfunction induced by
supply ripples or other factors, put a 0.01 μF to 0.1 μF
ceramic capacitor, CVCCx, near these pins. To prevent
damage caused by surge voltages, put an 18 V to 20 V
Zener diode, DZ, between the VCCx and COMx pins.
Voltages to be applied between the VCCx and COMx
pins should be regulated within the recommended
operational range of VCC, given in Section 2.
12.2.5. COM1, COM2, and COM3
These are the logic ground pins for the built-in control
MICs. For proper control, the control parts in each phase
must be connected to the corresponding ground pin. The
COM1, COM2, and COM3 pins should be connected
externally on a PCB because they are not internally
connected. Varying electric potential of the logic ground
can be a cause of improper operations. Therefore,
connect the logic ground as close and short as possible
to a shunt resistor, RS, at a single-point ground (or star
ground) which is separated from the power ground (see
Figure 12-4). Moreover, extreme care should be taken in
designing a PCB so that currents from the power ground
do not affect the COMx pin.
Internal Level-shifting Circuit
U1
VDC
VBB 25
CS
HINx
4 COM1
CDC
0
12 COM2
Set
0
20 COM3
Reset
LS1 33
LS2 30
RS
LS3 27
0
VBx-HSx
VBS(ON)
VBS(OFF)
OCP1, OCP3
0
Stays logic high
Q
Connect the COM1, COM2,
and COM3 pins on a PCB.
Create a single-point ground
(a star ground) near RS, but
keep it separated from the
power ground.
0
Figure 12-3.
Waveforms at VBx–HSx Voltage Drop
12.2.3. HS1, HS2, and HS3
These pins are the grounds of the high-side floating
power supplies for each phase, and are connected to the
negative nodes of bootstrap capacitors, CBOOTx. The HS1,
HS2, and HS3 pins are internally connected to the U, V,
and W pins, respectively.
Figure 12-4.
Connections to Logic Ground
12.2.6. HIN1, HIN2, and HIN3;
LIN1, LIN2, and LIN3
These are the input pins of the internal motor drivers
for each phase. The HINx pin acts as a high-side
controller; the LINx pin acts as a low-side controller.
Figure 12-5 shows an internal circuit diagram of the
HINx or LINx pin. This is a CMOS Schmitt trigger
SCM1270MF-DSE Rev.2.2
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SCM1270MF Series
circuit with a built-in 22 kΩ pull-down resistor, and its
input logic is active high.
Input signals across the HINx–COMx and the
LINx–COMx pins in each phase should be set within the
ranges provided in Table 12-1, below. Note that dead
time setting must be done for HINx and LINx pin
signals because the IC does not have a dead time
generator.
The higher PWM carrier frequency rises, the more
switching loss increases. Hence, the PWM carrier
frequency must be set so that operational case
temperatures and junction temperatures have sufficient
margins against the absolute maximum ranges, specified
in Section 1.
If the signals from the microcontroller become
unstable, the IC may result in malfunctions. To avoid
such malfunctions, set the microcontroller output line
not to have high-impedance outputs. Also, if the traces
from the microcontroller to the HINx or LINx pin (or
both) are too long, the traces may be interfered by noise.
Therefore, it is recommended to add an additional filter
or a pull-down resistor near the HINx or LINx pin as
needed (see Figure 12-6).
Here are filter circuit constants for reference:
RIN1x: 33 Ω to 100 Ω
RIN2x: 1 kΩ to 10 kΩ
CINx: 100 pF to 1000 pF
Care should be taken in adding RIN1x and RIN2x to the
traces. When they are connected to each other, the input
voltage of the HINx and LINx pins becomes slightly
lower than the output voltage of the microcontroller.
Table 12-1. Input Signals for HINx and LINx Pins
Parameter
High Level Signal
Low Level Signal
Input Voltage
Input Pulse
Width
PWM Carrier
Frequency
Dead Time
3 V < VIN < 5.5 V
0 V < VIN < 0.5 V
≥0.5 μs
≥0.5 μs
U1
RIN1
Input
signal
HINx
(LINx)
RIN2
SCM1270MF
Controller
Figure 12-6.
Filter Circuit for HINx or LINx Pin
12.2.7. VBB
This is the input pin for the main supply voltage, i.e.,
the positive DC bus. All of the IGBT collectors of the
high-side are connected to this pin. Voltages between
the VBB and COMx pins should be set within the
recommended range of the main supply voltage, V DC,
given in Section 2. To suppress surge voltages, put a
0.01 μF to 0.1 μF bypass capacitor, CS, near the VBB
pin and an electrolytic capacitor, CDC, with a minimal
length of PCB traces to the VBB pin.
12.2.8. LS1, LS2, and LS3
These are the emitter pins of the low-side IGBTs. For
current detection, the LS1, LS2, and LS3 pins should be
externally connected to a shunt resistor, RS. When
connecting a shunt resistor, use a resistor with low
inductance (required), and place it as near as possible to
the IC with a minimum length of traces to the LSx and
COMx pins. Otherwise, malfunction may occur because
a longer circuit trace increases its inductance and thus
increases its susceptibility to improper operations. In
applications where long PCB traces are required, add a
fast recovery diode, DRS, between the LSx and COMx
pins in order to prevent the IC from malfunctioning.
U1
≤20 kHz
VBB 25
VDC
CS
≥1.5 μs
4 COM1
U1
CIN
CDC
LS1 33
5V
12 COM2
RS
LS2 30
HINx
(LINx)
2 kΩ
20 COM3
DRS
LS3 27
22 kΩ
OCP1,
OCP3
COMx
Add a fast recovery
diode to a long trace.
Figure 12-5.
Internal Circuit Diagram of HINx or
LINx Pin
Figure 12-7.
SCM1270MF-DSE Rev.2.2
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Put a shunt resistor near
the IC with a minimum
length to the LSx pin.
Connections to LSx Pin
21
SCM1270MF Series
VFO
12.2.9. OCP1 and OCP3
These pins serve as the inputs of the overcurrent
protection (OCP) for monitoring the currents going
through the output transistors. Section 12.4.4 provides
further information about the OCP circuit configuration
and its mechanism.
U1
5V
RFO
1 MΩ
2 kΩ
FOx
3.0 µs (typ.)
Blanking
filter
INT
50 Ω
Output transistors
turn-off
CFO
QFO
COMx
Internal Circuit Diagram of FOx Pin and
Its Peripheral Circuit
QFO
ON
FOx Pin
Voltage
tD(FO)
VIL
0
Figure 12-9.
FOx Pin Delay Time, tD(FO)
TJ = 25°C
0.5
Fault Signal Voltage (V)
Each pin operates as the fault signal output and
shutdown signal input for the corresponding phase, the
U- or W-phase. Sections 12.4.1 and 12.4.2 explain the
two functions in detail, respectively.
Figure 12-8 illustrates an internal circuit diagram of
the FOx pin and its peripheral circuit. Because of its
open-drain nature, each of the FOx pins should be tied
by a pull-up resistor, RFO, to the external power supply.
The external power supply voltage (i.e., the FOx Pin
Pull-up Voltage, VFO) should range from 3.0 V to 5.5 V.
Figure 12-10 shows a relation between the FOx pin
voltage and the pull-up resistor, RFO. When the pull-up
resistor, RFO, has a too small resistance, the FOx pin
voltage at fault signal output becomes high due to the
on-resistance of a built-in MOSFET, QFO (Figure 12-8).
Therefore, it is recommended to use a 1 kΩ to 22 kΩ
pull-up resistor when the Low Level Input Threshold
Voltage of the microcontroller, VIL, is set to 1.0 V.
To suppress noise, add a filter capacitor, CFO, near the
IC with minimizing a trace length between the FOx and
COMx pins.
Note that, however, this additional filtering allows a
delay time, tD(FO), to occur, as seen in Figure 12-9. The
delay time, tD(FO), is a period of time which starts when
the IC receives a fault flag turning on the internal
MOSFET, QFO, and continues until when the FOx pin
reaches its threshold voltage (VIL) of 1.0 V or below (put
simply, until the time when the IC detects a low state,
“L”). Figure 12-11 shows how the delay time, tD(FO), and
the noise filter capacitor, CFO, are related. For avoiding
repeated OCP activations, the external microcontroller
must shut off any input signals to the IC within an OCP
hold time, tP, after the internal MOSFET (QFO) turn-on.
tP is 15 μs where minimum values of thermal
characteristics are taken into account (for more details,
see Section 12.4.4). When the Low Level Input
Threshold Voltage of the microcontroller, VIL, is set to
1.0 V, CFO must be set to ≤1000 pF. This is because the
V-phase delay time, tD(SD), at OCP activation is to be
taken into account (see Section 12.2.11).
Motor operations must be controlled by the external
microcontroller so that it can immediately stop the motor
when fault signals are detected. To resume the motor
operation thereafter, set the motor to be resumed after a
lapse of ≥2 seconds.
Figure 12-8.
Max.
0.4 Typ.
0.3
Min.
0.2
0.1
0
0
2
4
6
8
10
RFO (kΩ)
Figure 12-10.
Fault Signal Voltage vs. Pull-up Resistor,
RFO
TJ = 25°C
0.20
Delay Time, tD(FO) (µs)
12.2.10. FO1 (U-phase) and
FO3 (W-phase)
Max.
0.15
Typ.
0.10
Min.
0.05
0.00
0
200
400
600
800
1000
CFO (pF)
Figure 12-11.
SCM1270MF-DSE Rev.2.2
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Delay Time, tD(FO) vs. Filter Capacitor,
CFO
22
SCM1270MF Series
12.2.11. SD (V-phase)
12.2.12. VT
This is the shutdown signal input for the V-phase.
Figure 12-12 illustrates an internal circuit diagram of the
SD pin and its peripheral circuit. The SD pin is
connected to the FO1 and FO3 pins, allowing the
V-phase output transistors to be shut down by a fault
signal transmitted when one or more of the protections
in either the U- or W-phase is activated. When the SD
pin voltage decreases to the Low Level Input Threshold
Voltage (VIL = 1.5 V) or less, and remains in this
condition for a period of the SD Pin Filtering Time
(tFIL(SD) = 300 ns) or longer, the V-phase transistors turn
off.
Figure 12-14 shows a relation between tD(SD) and the
capacitance of CFO. As defined in Figure 12-13, tD(SD) is
a period of time from when the internal MOSFET (QFOx)
is turned on by activated protections until the V-phase
output (HO2) turns off.
If, after the U- or W-phase OCP activation, an FOx
signal detection by the SD pin takes too long, permanent
damage to the V-phase output transistors may occur.
Thus, the value of CFO must be set to ≤1000 pF.
This pin outputs temperature sensing voltages. The
external microcontroller can monitor the junction
temperature of the internal control IC, not of the output
transistors, with the VT pin. For more details, see
Section 12.3.
VFO
5V
500 kΩ
RFO
FO1
FO3
300 ns (typ.)
9
2 kΩ
SD
Blanking
filter
CFO
12.3. Temperature Sensing Function
The microcontroller can monitor the junction
temperature of the internal control IC, through
temperature sensing voltages that the VT pin outputs.
The SCM1270MF series does not include any
protections against overtemperature, such as an IC
shutdown or a fault flag. Therefore, the IC must be set to
stop its operation as it detects an abnormal heating state
with temperature sensing voltages. A typical example is
turning off input signals from the microcontroller.
Figure 12-15 shows a relation between the VT pin
voltage and temperature. Table 12-2 and Table 12-3
provide the details of variations found in Figure 12-15.
Temperature sensing voltages may exceed 3.0 V,
causing permanent damage to the IC in the worst case.
To protect the parts connected to the VT pin such as the
microcontroller, add a clamp diode, DZVT, between the
microcontroller power supply and the VT pin.
3.5
Output transistors
turn-off
COM2
Max.
Typ.
Min.
Figure 12-12.
Internal Circuit Diagram of SD Pin and
Its Peripheral Circuit
QFO1, QFO3
ON
tD(FO)
VT Pin Voltage (V)
12
3.0
2.5
2.0
1.5
FO1, FO3, SD
25
50
75
100
125
150
Junction Temperature ,TJ(MIC) (°C)
VIL
tFIL(SD)
Figure 12-15. VT Pin Voltage vs. Internal Control IC
Junction Temperature, TJ(MIC)
HO2 (V-phase)
OFF
tD(SD)
Figure 12-13.
Table 12-2. TJ(MIC) Variation on VT Pin Voltage
V-phase Shutdown Period, tD(SD)
TJ = 25°C
0.6
Max.
tD(SD) (µs)
0.5
Typ.
0.4
Min.
0.3
0.2
VT Pin Voltage
(V)
1.95
2.75
TJ(MIC)
(°C)
50 ± 8
125 ± 5
Table 12-3. VT Pin Voltage Variation on TJ(MIC)
0.1
0
0
200
400
600
800
1000
CFO (pF)
Figure 12-14.
Delay Time, tD(SD) vs. Filter Capacitor, CFO
TJ(MIC)
(°C)
50
125
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VT Pin Voltage
(V)
1.95 ± 0.09
2.75 ± 0.06
23
SCM1270MF Series
12.4.2. Shutdown Signal Input
Controller power supply
DZVT
Controller
10
VT
The FO1, FO3, and SD pins can be the input pins of
shutdown signals. When the FOx and SD pins become
logic low, the high- and low-side transistors of each
phase turn off. The voltages and pulse widths of
shutdown signals should be set as listed in Table 12-4.
CVT
12
Figure 12-16.
Table 12-4. Shutdown Signals
COM2
VT Pin Peripheral Circuit
12.4. Protection Functions
This section describes the various protection circuits
provided in the SCM1270MF series. The protection
circuits include the undervoltage lockout for power
supplies (UVLO), the simultaneous on-state prevention,
and the overcurrent protection (OCP). In case one or
more of these protection circuits are activated, the FOx
pin outputs a fault signal; as a result, the external
microcontroller can stop the operations of the three
phases by receiving the fault signal. The external
microcontroller can also shut down IC operations by
inputting a fault signal to the FOx pin. In the following
functional descriptions, “HOx” denotes a gate input
signal on the high-side transistor, whereas “LOx”
denotes a gate input signal on the low-side transistor
(see also the diagram in Section 7). “VBx–HSx” refers
to the voltages between the VBx and HSx pins.
Parameter
Input
Voltage
Input Pulse
Width
High Level Signal
Low Level Signal
3 V < VIN < 5.5 V
0 V < VIN < 0.5 V
≥3.0 μs
≥3.0 μs
The FO1, FO3, and SD pins must be all connected, as
shown in Figure 12-17. If an abnormal condition is
detected by either the U- or W-phase MIC, the high- and
low-side transistors of all phases turn off.
1 FO1
INT
9 SD
In case one or more of the following protections are
actuated, an internal transistor, QFOx, turns on, then the
FOx pin becomes logic low (≤0.5 V). The FO1, FO3,
and SD pins must be all connected by external traces.
1) Low-side undervoltage lockout (UVLO_VCC)
2) Overcurrent protection (OCP)
3) Simultaneous on-state prevention
While the FOx pin is in the low state, the high- and
low-side transistors of each phase turn off. In normal
operation, the FOx pin outputs a high signal of about
5 V. The fault signal output time of the FOx pin at OCP
activation is the OCP hold time, tP = 26 μs (typ.), fixed
by a built-in feature of the IC itself (see Section 12.4.4).
The external microcontroller receives the fault signals
with its interrupt pin (INT), and must be programmed to
put the HINx and LINx pins to logic low within the
predetermined OCP hold time, tP. If you need to resume
the motor operation thereafter, set the motor to be
resumed after a lapse of ≥2 seconds.
17 FO3
RFO
CFO
VFO
Figure 12-17.
12.4.1. Fault Signal Output
U1
4 COM1
12 COM2
20 COM3
All-phase Shutdown Circuit
12.4.3. Undervoltage Lockout for
Power Supply (UVLO)
In case the gate-driving voltages of the output
transistors decrease, their steady-state power dissipations
increase. This overheating condition may cause
permanent damage to the IC in the worst case. To
prevent this event, the SCM1270MF series has the
undervoltage lockout (UVLO) circuits for both of the
high- and low-side power supplies.
12.4.3.1. Undervoltage Lockout for High-side
Power Supply (UVLO_VB)
Figure 12-18 shows operational waveforms of the
undervoltage lockout for high-side power supply (i.e.,
UVLO_VB).
When the voltage between the VBx and HSx pins
(VBx–HSx) decreases to the Logic Operation Stop
Voltage (VBS(OFF) = 11.0 V) or less, the UVLO_VB
circuit in the corresponding phase gets activated and sets
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SCM1270MF Series
an HOx signal to logic low. When the voltage between
the VBx and HSx pins increases to the Logic Operation
Start Voltage (VBS(ON) = 11.5 V) or more, the IC releases
the UVLO_VB condition. Then, the HOx signal
becomes logic high at the rising edge of the first input
command after the UVLO_VB release. Any fault signals
are not output from the FOx pin during the UVLO_VB
operation. In addition, the VBx pin has an internal
UVLO_VB filter of about 3 μs, in order to prevent
noise-induced malfunctions.
HIN1/
HIN3
0
LIN1/
LIN3
0
About 3 µs
VCCx
UVLO_VCC
operation
VCC(ON)
VCC(OFF)
0
FO1/
FO3
HINx
0
0
HO1/
HO3
LINx
0
0
UVLO_VB
operation
VBx-HSx
VBS(OFF)
LO1/3 responds to input signal.
LO1/
LO3
VBS(ON)
0
UVLO release
0
No FOx output at
UVLO_VB
FOx
Figure 12-19.
UVLO_VCC Operational Waveforms
(U- or W-phase)
0
About 3 µs
HOx
HOx restarts at
positive edge after
UVLO_VB release.
HIN2
0
LIN2
0
LOx
0
0
Figure 12-18.
UVLO_VCC
operation
VCCx
VCC(ON)
VCC(OFF)
UVLO_VB Operational Waveforms
0
About 3 µs
12.4.3.2. Undervoltage Lockout for Low-side
Power Supply (UVLO_VCC)
Figure 12-19 shows operational waveforms of the
undervoltage lockout for low-side power supply (i.e.,
UVLO_VCC). The VCC1, VCC2, and VCC3 pins must
be all connected by external traces on a PCB. When the
VCCx pin voltage decreases to the Logic Operation Stop
Voltage (VCC(OFF) = 11.0 V) or less, the UVLO_VCC
circuit in the corresponding phase gets activated and sets
both of HOx and LOx signals to logic low. When the
VCCx pin voltage increases to the Logic Operation Start
Voltage (VCC(ON) = 11.5 V) or more, the IC releases the
UVLO_VCC operation. Then it resumes transmitting the
HOx and LOx signals according to input commands on
the HINx and LINx pins. During the UVLO_VCC
operation, the FOx pin becomes logic low and sends
fault signals. In addition, the VCCx pin has an internal
UVLO_VCC filter of about 3 μs, in order to prevent
noise-induced malfunctions.
FO1/
FO3
0
SD
0
HO2
0
tFIL(SD)
tFIL(SD)
LO2 responds to input signal.
LO2
0
Figure 12-20.
UVLO_VCC Operational Waveforms
(V-phase)
12.4.4. Overcurrent Protection (OCP)
The control ICs for the U- and W-phases have the
overcurrent protection (OCP) circuit each. Figure 12-21
is an internal circuit diagram describing the OCPx pin
and its peripheral circuit. The OCPx pin detects
overcurrents with voltage across an external shunt
resistor, RS. Because the OCPx pin is internally pulled
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SCM1270MF Series
down, the OCPx pin voltage increases proportionally to
a rise in the current running through the shunt resistor,
RS.
Figure 12-22 shows the OCP operational waveforms
when the OCP1 pin (U-phase) or the OCP3 pin
(W-phase) detects an overcurrent. When the OCPx pin
voltage increases to the OCP Threshold Voltage
(VTRIP = 0.50 V) or more, and remains in this condition
for a period of the OCP Blanking Time (tBK = 370 ns) or
longer, the OCPx circuit is activated. When an internal
delay time (tDELAY) of 0.3 µs has elapsed after the OCP
activation, the enabled OCPx circuit shuts off the
corresponding output transistors and puts the FOx pin
into a low state. Then, output current decreases as a
result of the output transistor turn-offs. Even if the
OCPx pin voltage falls below VTRIP, the IC holds the
FOx pin in the low state for a fixed OCP hold time,
tP = 26 μs (typ.). Then, the output transistors operate
according to input signals.
The V-phase control circuit being built without OCP,
an overcurrent signal from the V-phase must be input to
the OCPx pin that detects a U- or W-phase OCP signal.
The V-phase SD pin is connected to the U- and W-phase
FOx pins for this V-phase OCP alternative. When the
OCPx pin detects overcurrents, the SD pin, as well as
the FOx pin, goes into logic low, and then the V-phase
output transistors turn off after a lapse of the SD Pin
Filtering Time (tFIL(SD), 300 ns), as in Figure 12-23.
A turn-off delay time of the V-phase output transistors
depends on the capacitance of the FOx pin capacitor,
CFO. If the delay time is too long, the output transistors
may be destroyed due to overcurrent. Thus, the value of
CFO must be set to ≤1000 pF.
The OCP is used for detecting abnormal conditions,
such as an output transistor shorted. In case short-circuit
conditions occur repeatedly, the output transistors can be
destroyed. For this reason, motor operations must be
controlled by the external microcontroller so that it can
immediately stop the motor when fault signals are
detected.
The external microcontroller receives the fault signals
with its interrupt pin (INT), and must be programmed to
put the HINx and LINx pins to logic low within the
predetermined OCP hold time, tP. If you need to resume
the motor operation thereafter, set the motor to be
resumed after a lapse of ≥2 seconds.
For proper shunt resistor setting, your application
must meet the following:
● Use the shunt resistor that has a recommended
resistance, RS (see Section 2).
● Set the OCPx pin input voltage to vary within the
rated OCPx pin voltages, VOCP (see Section 1).
● Keep the current through the output transistors below
the rated output current (pulse), IOP (see Section 1).
It is required to use a resistor with low internal
inductance because high-frequency switching current
will flow through the shunt resistor, RS. In addition,
choose a resistor with allowable power dissipation
according to your application.
When you connect a CR filter (i.e., a pair of a filter
resistor, RO, and a filter capacitor, CO) to the OCPx pin,
care should be taken in setting the time constants of RO
and CO. The larger the time constant, the longer the time
that the OCPx pin voltage rises to VTRIP. And this may
cause permanent damage to the transistors.
Consequently, a propagation delay of the IC must be
taken into account when you determine the time
constants. For RO and CO, their time constants must be
set to ≤0.82 µs. The filter capacitor, CO, should also be
placed near the IC, between the OCPx and COMx pins
with a minimal length of traces.
Note that overcurrents are undetectable when one or
more of the U, V, and W pins or their traces are shorted
to ground (ground fault). In case any of these pins falls
into a state of ground fault, the output transistors may be
destroyed.
U1
VTRIP
2 kΩ
OCPx
VBB
2 kΩ
+
100 kΩ
Blanking
filter
370 ns (typ.)
CO
Output transistors
turn-off and QFO
turn-on
COMx
LSx
A/D
RO
DRS
RS
COM
Figure 12-21.
Internal Circuit Diagram of OCPx Pin
and Its Peripheral Circuit
HIN1/
HIN3
0
LIN1/
LIN3
0
tDELAY 0.3 µs (typ.)
OCP1/
OCP3
tBK
tBK
tBK
VTRIP
0
FOx restarts
automatically after tP.
FO1/
FO3
tP
0
HO1/
HO3
HO1/3 responds to input signal.
0
LO1/
LO3
0
Figure 12-22.
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OCP Operational Waveforms (U- or
W-phase)
26
SCM1270MF Series
Simultaneous on-state
prevention enabled
HIN2
HINx
0
LIN2
0
0
LINx
tDELAY 0.3 µs (typ.)
tBK
tBK
tBK
OCP2
0
HOx
VTRIP
About 0.8 µs
0
0
FO1/
FO3
FOx restarts
automatically after tP.
LOx
About 0.8 µs
tP
0
0
FOx
SD
0
0
tFIL(SD)
HO2 responds to
input signal.
HO2
0
LO2
Figure 12-24. Operational Waveforms of
Simultaneous On-state Prevention
tFIL(SD)
0
Figure 12-23.
OCP Operational Waveforms (V-phase)
12.4.5. Simultaneous On-state Prevention
In case both of the HINx and LINx pins receive logic
high signals at once, the high- and low-side transistors
turn on at the same time, causing overcurrents to pass
through. As a result, the switching transistors will be
destroyed. To prevent this event, the IC has the
simultaneous on-state prevention circuit in each of the
MICs. Note that incorrect command input and noise
interference are also largely responsible for such a
simultaneous-on condition. Figure 12-24 shows
operational waveforms of the simultaneous on-state
prevention.
When logic high signals are asserted on the HINx and
LINx pins at once, as in Figure 12-24, this function gets
activated and turns the high- and low-side transistors off.
Then, during the function is being enabled, the FOx pin
becomes logic low and sends fault signals. After the IC
comes out of the simultaneous on-state condition, “HOx”
and “LOx” start responding in accordance with HINx
and LINx input commands again.
To prevent noise-induced malfunctions, the
simultaneous on-state prevention circuit has a filter of
about 0.8 μs.
Note that this function does not have any of dead-time
programming circuits. Therefore, input signals to the
HINx and LINx pins must have proper dead times as
defined in Section 12.2.6.
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SCM1270MF Series
13. Design Notes
This section also employs the notation system
described in the beginning of the previous section.
13.1. PCB Pattern Layout
Figure 13-1 shows a schematic diagram of a motor
drive circuit.
U1
VBB
MIC3
W
LS3
VDC
25
26
27
Ground traces should
be wide and short.
range of screw torque defined in Section 4.
● When mounting a heatsink, it is recommended to use
silicone greases. If a thermally conductive sheet or an
electrically insulating sheet is used, package cracks
may be occurred due to creases at screw tightening.
Therefore, you should conduct thorough evaluations
before using these materials.
● When applying a silicone grease, make sure that there
are no foreign substances between the IC and a
heatsink. Extreme care should be taken not to apply a
silicone grease onto any device pins as much as
possible. The following requirements must be met for
proper grease application:
− Grease thickness: 100 μm
− Heatsink flatness: ±100 μm
− Apply a silicone grease within the area indicated in
Figure 13-2, below.
Screw hole
MIC2
29
V
LS2
Screw hole
M
5.8
5.8
30
M3
Thermal silicone
grease application area
M3
Heatsink
MIC1
U
3.1
32
Figure 13-2.
LS1
Figure 13-1.
33
High-frequency, high-voltage
current loops should be as small
and wide as possible.
High-frequency, High-voltage Current
Paths
The circuit consists of current paths having high
frequencies and high voltages, which also bring about
negative influences on IC operation, noise interference,
and power dissipation. Therefore, PCB trace layouts and
component placements play an important role in circuit
designing. Current loops, which have high frequencies
and high voltages, should be as small and wide as
possible, in order to maintain a low-impedance state. In
addition, ground traces should be as wide and short as
possible so that radiated EMI levels can be reduced.
13.2. Considerations in Heatsink Mounting
The following are the key considerations and the
guidelines for mounting a heatsink:
● Be sure to use a metric screw of M3 and a plain
washer of 7.0 mm (φ). To tighten the screws, use a
torque screwdriver. Tighten the two screws firstly up
to about 30% of the maximum screw torque, then
finally up to 100% of the prescribed maximum screw
torque. Perform appropriate tightening within the
37.1
3.1
Unit: mm
Reference Application Area for Thermal
Silicone Grease
13.3. Considerations in IC Characteristics
Measurement
When measuring the breakdown voltage or leakage
current of the transistors incorporated in the IC, note that
the gate and emitter of each transistor should have the
same potential. Moreover, care should be taken during
the measurement because the collectors of the high-side
transistors are all internally connected to the VBB pin.
The output (U, V, and W) pins are connected to the
emitters of the corresponding high-side transistors,
whereas the LSx pins are connected to the emitters of
the low-side transistors. The gates of the high-side
transistors are pulled down to the corresponding output
(U, V, and W) pins; similarly, the gates of the low-side
transistors are pulled down to the COMx pins. When
measuring the breakdown voltage or leakage current of
the transistors incorporated in the IC, note that all of the
output (U, V, and W), LSx, and COMx pins must be
appropriately connected. Otherwise, the switching
transistors may result in permanent damage.
The following are circuit diagrams representing
typical measurement circuits for breakdown voltage:
Figure 13-3 shows the high-side transistor (Q1H) in the
U-phase; Figure 13-4 shows the low-side transistor (Q1L)
in the U-phase. And all the pins that are not represented
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SCM1270MF Series
in these figures are open. Before conducting a
measurement, be sure to isolate the ground of the
to-be-measured phase from those of other two phases
not to be measured. Then, in each of the two phases,
which are separated not to be measured, connect the LSx
and COMx pins each other at the same potential, and
leave them unused and floated.
U1
VBB
25
Q1H
4 COM1
MIC1
U 32
V
Q1L
14. Calculating Power Losses and
Estimating Junction Temperature
This section describes the procedures to calculate
power losses in a switching transistor, and to estimate a
junction temperature. Note that the descriptions listed
here are applicable to the SCM1270MF series, which is
controlled by a 3-phase sine-wave PWM driving
strategy. Total power loss in an IGBT can be obtained
by taking the sum of steady-state loss, PON, and
switching loss, PSW. The following subsections contain
the mathematical procedures to calculate the power
losses in an IGBT and its junction temperature. For
quick and easy references, we offer calculation support
tools online. Please visit our website to find out more.
● DT0051: SCM1200MF Series Calculation Tool
http://www.semicon.sanken-ele.co.jp/en/calc-tool/igbt
1_caltool_en.html
LS1
33
31
Q2H
V
12 COM2
29
MIC2
Q2L
14.1. IGBT Steady-state Loss, PON
LS2
30
Steady-state loss in an IGBT can be computed by
using the VCE(SAT) vs. IC curves, listed in Section 15.3.1.
As expressed by the curves in Figure 14-1, a linear
approximation at a range the IC is actually used is
obtained by: VCE(SAT) = α × IC + β. The values gained by
the above calculation are then applied as parameters in
Equation (4), below. Hence, the equation to obtain the
IGBT steady-state loss, PON, is:
Q3H
20 COM3
MIC3
W
26
Q3L
LS3
27
Figure 13-3. Typical Measurement Circuit for
High-side Transistor (Q1H) in U-phase
PON =
1 π
(φ) × IC (φ) × DT × dφ
∫ V
2π 0 CE(SAT)
U1
VBB
25
Q1H
4 COM1
U 32
MIC1
V
Q1L
1 1
4
= α( +
M × cos θ) IM 2
2 2 3π
√2 1 π
+
β ( + M × cos θ) IM .
π
2 8
(4)
LS1
33
31
Q2H
12 COM2
V
29
MIC2
Q2L
LS2
Where:
VCE(SAT) is the collector-to-emitter
voltage of the IGBT (V),
IC is the collector current of the IGBT (A),
DT is the duty cycle, which is given by
saturation
30
Q3H
20 COM3
MIC3
DT =
W
26
Q3L
LS3
27
Figure 13-4. Typical Measurement Circuit for
Low-side Transistor (Q1L) in U-phase
1 + M × sin(φ + θ)
,
2
M is the modulation index (0 to 1),
cosθ is the motor power factor (0 to 1),
IM is the effective motor current (A),
α is the slope of the linear approximation in the
VCE(SAT) vs. IC curve, and
β is the intercept of the linear approximation in the
VCE(SAT) vs. IC curve.
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SCM1270MF Series
VCC = 15 V
2.5
25 °C
VCE(SAT) (V)
2.0
1.5
1.0
75 °C
0.5
125 °C
y = 0.108x + 0.831
0.0
0
Figure 14-1.
1
2
3
4 5
IC (A)
6
7
8
9
10
Linear Approximate Equation of VCE(SAT)
vs. IC
14.2. IGBT Switching Loss, PSW
Switching loss in an IGBT, PSW, can be calculated by
Equation (5), letting IM be the effective current value of
the motor:
PSW =
VDC
√2
× fC × αE × IM ×
.
π
300
(5)
Where:
fC is the PWM carrier frequency (Hz),
VDC is the main power supply voltage (V), i.e., the
VBB pin input voltage, and
αE is the slope of the switching loss curve
(see Section 15.3.2).
14.3. Estimating Junction Temperature of
IGBT
The junction temperature of an IGBT, TJ, can be
estimated with Equation (6):
TJ = R (j−C)Q × (PON + PSW ) + TC .
(6)
Where:
R(J-C)Q is the junction-to-case thermal resistance per
IGBT (°C/W), and
TC is the case temperature (°C), measured at the point
defined in Figure 3-1.
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SCM1270MF Series
15. Performance Curves
15.1. Transient Thermal Resistance Curves
The following graph represents transient thermal resistance (the ratios of transient thermal resistance), with
steady-state thermal resistance = 1.
Ratio of Transient Thermal Resistance
1.00
0.10
0.01
1
10
100
1000
10000
Time (ms)
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SCM1270MF Series
15.2. Performance Curves of Control Parts
Figure 15-1 to Figure 15-23 provide performance curves of the control parts integrated in the SCM1200MF series,
including variety-dependent characteristics and thermal characteristics. TJ represents the junction temperature of the
control parts.
Table 15-1. Typical Characteristics of Control Parts
Figure Number
Figure 15-1
Figure 15-2
Figure 15-3
Figure 15-4
Figure 15-5
Figure 15-6
Figure 15-7
Figure 15-8
Figure 15-9
Figure 15-10
Figure 15-11
Figure 15-12
Figure 15-13
Figure 15-14
Figure 15-15
Figure 15-16
Figure 15-17
Figure 15-18
Figure 15-19
Figure 15-20
Figure 15-21
Figure 15-22
Figure 15-23
Figure Caption
Logic Supply Current in 3-phase Operation, ICC vs. TC
Logic Supply Current in 3-phase Operation, ICC vs. VCCx Pin Voltage, VCC
Logic Supply Current in 1-phase Operation (HINx = 0 V), IBS vs. TC
Logic Supply Current in 1-phase Operation (HINx = 5 V), IBS vs. TC
Logic Supply Current in 1-phase Operation (HINx = 0 V), IBS vs. VBx Pin Voltage, VB
Logic Operation Start Voltage, VBS(ON) vs. TC
Logic Operation Stop Voltage, VBS(OFF) vs. TC
Logic Operation Start Voltage, VCC(ON) vs. TC
Logic Operation Stop Voltage, VCC(OFF) vs. TC
UVLO_VB Filtering Time vs. TC
UVLO_VCC Filtering Time vs. TC
Input Current at High Level (HINx or LINx), IIN vs. TC
High Level Input Signal Threshold Voltage, VIH vs. TC
Low Level Input Signal Threshold Voltage, VIL vs. TC
Minimum Transmittable Pulse Width for High-side Switching, tHIN(MIN) vs. TC
Minimum Transmittable Pulse Width for Low-side Switching, tLIN(MIN) vs. TC
FOx Pin Voltage in Normal Operation, VFOL vs. TC
OCP Threshold Voltage, VTRIP vs. TC
Blanking Time, tBK + Propagation Delay, tDELAY vs. TC
OCP Hold Time, tP vs. TC
Filtering Time of Simultaneous On-state Prevention vs. TC
SD Pin Filtering Time, tFIL(SD) vs. TC
V-phase Shutdown Period, tD(SD) vs. TC
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VCC x= 15 V, HINx = 0 V, LINx = 0 V
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
HIN x= 0 V, LINx = 0 V
4.0
Max.
3.5
3.0
Typ.
Min.
ICC (mA)
ICC (mA)
SCM1270MF Series
125 °C
2.5
25 °C
2.0
−30 °C
1.5
1.0
0.5
0.0
-30
0
30
60
90
120
150
12
13
14
15
TC (°C)
Figure 15-1.
Logic Supply Current in 3-phase Operation,
ICC vs. TC
Figure 15-2.
VBx = 15 V, HINx = 0 V
250
16
17
18
19
20
VCC (V)
Logic Supply Current in 3-phase Operation,
ICC vs. VCCx Pin Voltage, VCC
VBx = 15 V, HINx = 5 V
250
Max.
200
150
Typ.
150
Min.
100
Typ.
IBS (µA)
IBS (µA)
Max.
200
50
Min.
100
50
0
-30
0
30
60
90
120
0
150
-30
0
30
TC (°C)
90
120
150
Figure 15-4. Logic Supply Current in 1-phase
Operation (HINx = 5 V), IBS vs. TC
12.50
VBx = 15 V
12.25
12.00
125 °C
25 °C
−30 °C
VBS(ON) (V)
IBS (µA)
Figure 15-3. Logic Supply Current in 1-phase
Operation (HINx = 0 V), IBS vs. TC
180
160
140
120
100
80
60
40
20
0
60
TC (°C)
11.75
Max.
11.50
Typ.
11.25
Min.
11.00
10.75
10.50
12
13
14
15
16
17
18
19
20
-30
0
Figure 15-5. Logic Supply Current in 1-phase
Operation (HINx = 0 V), IBS vs. VBx Pin Voltage, VB
30
60
90
120
150
TC (°C)
VB (V)
Figure 15-6.
Logic Operation Start Voltage, VBS(ON) vs.
TC
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12.50
12.0
11.8
11.6
11.4
11.2
11.0
10.8
10.6
10.4
10.2
10.0
12.25
12.00
Max.
Typ.
Min.
VCC(ON) (V)
VBS(OFF) (V)
SCM1270MF Series
11.75
Max.
11.50
Typ.
11.25
Min.
11.00
10.75
10.50
-30
0
30
60
90
120
150
-30
0
30
TC (°C)
Logic Operation Stop Voltage, VBS(OFF) vs.
TC
12.0
11.8
11.6
11.4
11.2
11.0
10.8
10.6
10.4
10.2
10.0
Max.
Typ.
Min.
-30
0
30
60
90
120
150
Figure 15-8.
UVLO_VB Filtering Time (µs)
VCC(OFF) (V)
Figure 15-7.
120
150
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Max.
Typ.
Min.
-30
0
30
60
90
120
150
TC (°C)
Logic Operation Stop Voltage, VCC(OFF) vs.
TC
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Figure 15-10.
UVLO_VB Filtering Time vs. TC
INHx or INLx = 5 V
400
Max.
Typ.
Min.
IIN (µA)
UVLO_VCC Filtering Time
(µs)
90
Logic Operation Start Voltage, VCC(ON) vs.
TC
TC (°C)
Figure 15-9.
60
TC (°C)
350
Max.
300
Typ.
250
Min.
200
150
100
50
0
-30
0
30
60
90
120
150
-30
TC (°C)
Figure 15-11.
UVLO_VCC Filtering Time vs. TC
0
30
60
90
120
150
TC (°C)
Figure 15-12.
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Input Current at High Level (HINx or
LINx), IIN vs. TC
34
SCM1270MF Series
2.6
2.0
2.4
1.8
2.0
Max.
1.8
Typ.
1.6
1.6
VIL (V)
VIH (V)
2.2
Min.
1.4
Max.
1.4
Typ.
1.2
Min.
1.0
1.2
1.0
0.8
-30
0
30
60
90
120
150
-30
0
30
TC (°C)
High Level Input Signal Threshold
Voltage, VIH vs. TC
500
450
400
350
300
250
200
150
100
50
0
Max.
Typ.
Min.
-30
0
30
60
90
120
Figure 15-14.
tLIN(MIN) (ns)
tHIN(MIN) (ns)
Figure 15-13.
90
120
150
150
Low Level Input Signal Threshold
Voltage, VIL vs. TC
500
450
400
350
300
250
200
150
100
50
0
Max.
Typ.
Min.
-30
0
30
TC (°C)
60
90
120
150
TC (°C)
Figure 15-15. Minimum Transmittable Pulse Width for
High-side Switching, tHIN(MIN) vs. TC
Figure 15-16. Minimum Transmittable Pulse Width for
Low-side Switching, tLIN(MIN) vs. TC
FOx pull-up voltage = 5 V, RFO = 3.3 kΩ, FOx in logic low
300
60
TC (°C)
540
530
250
VFOL (mV)
Max.
Typ.
Min.
150
100
VTRIP (mV)
520
200
Max.
510
Typ.
500
490
Min.
480
50
470
0
460
-30
0
30
60
90
120
150
-30
TC (°C)
Figure 15-17.
FOx Pin Voltage in Normal Operation,
VFOL vs. TC
0
30
60
90
120
150
TC (°C)
Figure 15-18.
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OCP Threshold Voltage, VTRIP vs. TC
35
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
Max.
Typ.
tP (µs)
tBK + tDELAY (µs)
SCM1270MF Series
Min.
-30
0
30
60
90
120
50
45
40
35
30
25
20
15
10
5
0
Max.
Typ.
Min.
-30
150
0
30
TC (°C)
Blanking Time, tBK + Propagation Delay,
tDELAY vs. TC
Figure 15-20.
1.4
1.2
Max.
1.0
0.8
Typ.
0.6
Min.
0.4
0.2
0.0
-30
0
30
60
90
150
120
150
OCP Hold Time, tP vs. TC
Max.
Typ.
Min.
-30
0
30
60
90
120
150
TC (°C)
Filtering Time of Simultaneous On-state
Prevention vs. TC
Figure 15-22.
SD Pin Filtering Time, tFIL(SD) vs. TC
CFO = 1000 pF
0.7
tD(SD) (µs)
120
0.50
0.45
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.00
TC (°C)
Figure 15-21.
90
TC (°C)
tFIL(SD) (µs)
Filtering Time of Simultaneous
On-state Prevention (µs)
Figure 15-19.
60
0.6
Max.
0.5
Typ.
0.4
Min.
0.3
0.2
0.1
0.0
-30
0
30
60
90
120
150
TC (°C)
Figure 15-23.
V-phase Shutdown Period, tD(SD) vs. TC
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SCM1270MF Series
15.3. Performance Curves of Output Parts
15.3.1. Output Transistor Performance Curves
15.3.1.1. SCM1272MF
VCCx = 15 V
2.5
2.5
2.0
25 °C
25 °C
VF (V)
VCE(SAT) (V)
2.0
1.5
1.0
0.5
75 °C
1.5
1.0
75 °C
0.5
125 °C
125 °C
0.0
0.0
0
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15
0
1
2
3
4
5
Figure 15-24.
6
7
8
9 10 11 12 13 14 15
IF (A)
IC (A)
IGBT VCE(SAT) vs. IC
Figure 15-25.
Freewheeling Diode VF vs. IF
15.3.1.2. SCM1274MF
VCCx = 15 V
2.5
2.5
2.0
25 °C
1.0
0.5
125 °C
75 °C
125 °C
0.0
0.0
2
1.0
0.5
75 °C
0
25 °C
1.5
1.5
VF (V)
VCE(SAT) (V)
2.0
4
6
8
10
12
14
16
18
20
0
2
4
IGBT VCE(SAT) vs. IC
8
10
12
14
16
18
20
IF (A)
IC (A)
Figure 15-26.
6
Figure 15-27.
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Freewheeling Diode VF vs. IF
37
SCM1270MF Series
15.3.1.3. SCM1276MF
VCCx = 15 V
2.5
2.5
2.0
2.0
25 °C
1.5
VF (V)
VCE(SAT) (V)
25 °C
1.0
75 °C
0.5
1.5
1.0
75 °C
125 °C
0.5
125 °C
0.0
0.0
0
2
4
6
8 10 12 14 16 18 20 22 24 26 28 30
0
2
4
6
IC (A)
Figure 15-28.
IGBT VCE(SAT) vs. IC
8 10 12 14 16 18 20 22 24 26 28 30
IF (A)
Figure 15-29.
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Freewheeling Diode VF vs. IF
38
SCM1270MF Series
15.3.2. Switching Loss Curves
Conditions: VBB pin voltage = 300 V, half-bridge circuit with inductive load.
15.3.2.1. SCM1272MF
VBx = 15 V
700
600
600
Turn-off
500
Turn-on
500
400
400
300
200
Turn-on
E (µJ)
E (µJ)
VCCx = 15 V
700
100
300
200
Turn-off
100
0
0
0
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15
0
1
2
3
4
5
IC (A)
Figure 15-30.
High-side Switching Loss (TJ = 25 °C)
Figure 15-31.
VBx = 15 V
700
600
7
8
9 10 11 12 13 14 15
500
500
400
400
Turn-on
200
VCCx = 15 V
600
Turn-off
300
Low-side Switching Loss (TJ = 25 °C)
700
E (µJ)
E (µJ)
6
IC (A)
Turn-on
300
Turn-off
200
100
100
0
0
0
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15
0
1
2
IC (A)
Figure 15-32.
High-side Switching Loss (TJ = 125 °C)
3
4
5
6
7
8
9 10 11 12 13 14 15
IC (A)
Figure 15-33.
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Low-side Switching Loss (TJ = 125 °C)
39
SCM1270MF Series
15.3.2.2. SCM1274MF
VBx = 15 V
1200
1000
1000
800
600
400
Turn-off
200
Turn-on
800
Turn-on
E (µJ)
E (µJ)
VCCx = 15 V
1200
600
400
Turn-off
200
0
0
0
2
4
6
8
10
12
14
16
18
20
0
2
4
6
IC (A)
Figure 15-34.
High-side Switching Loss (TJ = 25 °C)
10
12
14
16
18
20
1000
1000
800
800
600
Turn-on
Low-side Switching Loss (TJ = 25 °C)
VCCx = 15 V
1200
E (µJ)
E (µJ)
Figure 15-35.
VBx = 15 V
1200
400
8
IC (A)
Turn-on
600
400
Turn-off
200
200
Turn-off
0
0
0
2
4
6
8
10
12
14
16
18
20
0
2
IC (A)
Figure 15-36.
High-side Switching Loss (TJ = 125 °C)
4
6
8
10
12
14
16
18
20
IC (A)
Figure 15-37.
SCM1270MF-DSE Rev.2.2
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Low-side Switching Loss (TJ = 125 °C)
40
SCM1270MF Series
15.3.2.3. SCM1276MF
VBx = 15 V
1400
Turn-off
1200
1200
Turn-off
1000
1000
800
800
E (µJ)
E (µJ)
VCCx = 15 V
1400
600
400
Turn-on
200
600
Turn-on
400
200
0
0
0
5
10
15
20
25
30
0
5
10
IC (A)
Figure 15-38.
High-side Switching Loss (TJ = 25 °C)
Figure 15-39.
VBx = 15 V
1400
1200
Turn-off
800
E (µJ)
E (µJ)
1000
600
Turn-on
400
200
0
0
5
10
15
20
25
30
20
25
30
High-side Switching Loss (TJ = 125 °C)
Low-side Switching Loss (TJ = 25 °C)
VCCx = 15 V
1800
1600
1400
1200
1000
800
600
400
200
0
Turn-off
Turn-on
0
IC (A)
Figure 15-40.
15
IC (A)
5
10
15
20
25
30
IC (A)
Figure 15-41.
SCM1270MF-DSE Rev.2.2
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Low-side Switching Loss (TJ = 125 °C)
41
SCM1270MF Series
15.4. Allowable Effective Current Curves
The following curves represent allowable effective currents in 3-phase sine-wave PWM driving with parameters such
as typical VCE(SAT) and typical switching losses.
Operating conditions: VBB pin input voltage, VDC = 300 V; VCC pin input voltage, VCC = 15 V; modulation index,
M = 0.9; motor power factor, cosθ = 0.8; junction temperature, T J = 150 °C.
15.4.1. SCM1272MF
fC = 2 kHz
Allowable Effective Current Curves (Arms)
15
10
5
0
25
50
75
100
125
150
TC (°C)
Figure 15-42.
Allowable Effective Current (fC = 2 kHz): SCM1272MF
fC = 16 kHz
Allowable Effective Current Curves (Arms)
15
10
5
0
25
50
75
100
125
150
TC (°C)
Figure 15-43.
Allowable Effective Current (fC = 16 kHz): SCM1272MF
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SCM1270MF Series
15.4.2. SCM1274MF
fC = 2 kHz
Allowable Effective Current Curves (Arms)
20
15
10
5
0
25
50
75
100
125
150
TC (°C)
Allowable Effective Current Curves (Arms)
Figure 15-44.
Allowable Effective Current (fC = 2 kHz): SCM1274MF
fC = 16 kHz
20
15
10
5
0
25
50
75
100
125
150
TC (°C)
Figure 15-45.
Allowable Effective Current (fC = 16 kHz): SCM1274MF
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SCM1270MF Series
15.4.3. SCM1276MF
fC = 2 kHz
Allowable Effective Current Curves (Arms)
30
25
20
15
10
5
0
25
50
75
100
125
150
TC (°C)
Figure 15-46.
Allowable Effective Current (fC = 2 kHz): SCM1276MF
fC = 16 kHz
Allowable Effective Current Curves (Arms)
30
25
20
15
10
5
0
25
50
75
100
125
150
TC (°C)
Figure 15-47.
Allowable Effective Current (fC = 16 kHz): SCM1276MF
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44
SCM1270MF Series
15.5. Short Circuit SOAs (Safe Operating Areas)
Conditions: VDC ≤ 400 V, 13.5 V ≤ VCC ≤ 16.5 V, TJ = 125°C, 1 pulse.
15.5.1. SCM1272MF
250
Collector Current, IC(PEAK) (A)
200
150
100
Short Circuit SOA
50
0
0
1
2
3
4
5
3
4
5
Pulse Width (µs)
15.5.2. SCM1274MF
300
Collector Current, IC(PEAK) (A)
250
200
150
100
Short Circuit SOA
50
0
0
1
2
Pulse Width (µs)
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45
SCM1270MF Series
15.5.3. SCM1276MF
400
Collector Current, IC(PEAK) (A)
350
300
250
200
150
Short Circuit SOA
100
50
0
0
1
2
3
4
5
Pulse Width (µs)
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46
SCM1270MF Series
16. Pattern Layout Example
This section contains the schematic diagrams of a PCB pattern layout example using an SCM1270MF series
device. For reference terminal hole sizes, see Section 10.3.
IPM1
SV3
SV1
SV2
Figure 16-1.
Figure 16-2.
Top View
Bottom View
SCM1270MF-DSE Rev.2.2
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Jul. 19, 2022
https://www.sanken-ele.co.jp/en
© SANKEN ELECTRIC CO., LTD. 2017
47
SCM1270MF Series
LS1
1
R4
FO1
33
2 OCP1
C20
3 LIN1
4 COM1
U 32
5 HIN1
6 VCC1
C17
C14
31
VB1
8 HS1
7
C1
9
SD
LS230
10 VT
11 LIN2
12 COM2
1
2
3
V
29
13 HIN2
14 VCC2
SV4
C18
C15
1
5
6
7
8
R5
R6
R7
R8
R9
R10
C2
17
FO3
LS3
27
18 OCP3
19 LIN3
20 COM3
W26
21 HIN3
22 VCC3
9
C19
VBB
C5
C6
C7
C8
C9
C10
10
SV2
C16
D5
25
1
VB3
24 HS3
23
2
C3
SV3
1
R13
R12
R11
2
3
C4
D4
SV1
Figure16-3.
C11
C12/RT
C13
4
C21
D1
C23
R14
R1
4
D2
C24
R15
R2
3
D3
C25
R16
R3
2
28
VB2
16 HS2
15
Circuit Diagram of PCB Pattern Layout Example
SCM1270MF-DSE Rev.2.2
SANKEN ELECTRIC CO., LTD.
Jul. 19, 2022
https://www.sanken-ele.co.jp/en
© SANKEN ELECTRIC CO., LTD. 2017
48
SCM1270MF Series
17. Typical Motor Driver Application
This section contains the information on the typical motor driver application listed in the previous section, including
a circuit diagram, specifications, and the bill of the materials used.
● Motor Driver Specifications
IC
Main Supply Voltage, VDC
Rated Output Power
SCM1272MF
300 VDC (typ.)
1.35 kW
● Circuit Diagram
See Figure16-3.
● Bill of Materials
Symbol
Part Type
C1
Electrolytic
C2
Electrolytic
C3
Electrolytic
C4
Electrolytic
C5
Ceramic
C6
Ceramic
C7
Ceramic
C8
Ceramic
C9
Ceramic
C10
Ceramic
C11
Ceramic
C12/RT Ceramic
C13
Ceramic
C14
Ceramic
C15
Ceramic
C16
Ceramic
C17
Ceramic
C18
Ceramic
C19
Ceramic
C20
Ceramic
C21
Film
C23*
Ceramic
C24*
Ceramic
C25*
Ceramic
Ratings
47 μF, 50 V
47 μF, 50 V
47 μF, 50 V
100 μF, 50 V
100 pF, 50 V
100 pF, 50 V
100 pF, 50 V
100 pF, 50 V
100 pF, 50 V
100 pF, 50 V
2200 pF, 50 V
2200 pF, 50 V
2200 pF, 50 V
0.1 μF, 50 V
0.1 μF, 50 V
0.1 μF, 50 V
0.1 μF, 50 V
0.1 μF, 50 V
0.1 μF, 50 V
1000 pF, 50 V
0.1 μF, 630 V
0.1 μF, 50 V
0.1 μF, 50 V
0.1 μF, 50 V
Symbol
Part Type
Ratings
R1*
Metal plate
27 mΩ, 2 W
R2*
Metal plate
27 mΩ, 2 W
R3*
Metal plate
27 mΩ, 2 W
R4
General
4.7 kΩ, 1/8 W
R5
General
100 Ω, 1/8 W
R6
General
100 Ω, 1/8 W
R7
General
100 Ω, 1/8 W
R8
General
100 Ω, 1/8 W
R9
General
100 Ω, 1/8 W
R10
General
100 Ω, 1/8 W
R11
General
100 Ω, 1/8 W
R12
General
Open
R13
General
100 Ω, 1/8 W
R14*
General
Open
R15*
General
Open
R16*
General
Open
D1
General
1 A, 50 V
D2
General
1 A, 50 V
D3
General
1 A, 50 V
D4
Zener
VZ = 20 V, 0.5 W
D5
General
Open
SV1
Pin header
Equiv. to MA04-1
SV2
Pin header
Equiv. to MA10-1
SV3
Connector
Equiv. to B2P3-VH
SV4
Connector
Equiv. to B3P5-VH
IPM1
IC
SCM1272MF
* Refers to a part that requires adjustment based on operation performance in an actual application.
SCM1270MF-DSE Rev.2.2
SANKEN ELECTRIC CO., LTD.
Jul. 19, 2022
https://www.sanken-ele.co.jp/en
© SANKEN ELECTRIC CO., LTD. 2017
49
SCM1270MF Series
Important Notes
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DSGN-CEZ-16003
SCM1270MF-DSE Rev.2.2
SANKEN ELECTRIC CO., LTD.
Jul. 19, 2022
https://www.sanken-ele.co.jp/en
© SANKEN ELECTRIC CO., LTD. 2017
50