SCM1276MF

600 V High Voltage 3-phase Motor Driver ICs SCM1270MF Series Data Sheet Description Package The SCM1270MF series are high voltage 3-phase motor driver ICs in which transistors, pre-driver ICs (MICs), and bootstrap circuits (diodes and resistors) are highly integrated. These products can run on a 3-shunt current detection system and optimally control the inverter systems of medium-capacity motors that require universal input standards. DIP33 Pin Pitch: 1.27 mm Mold Dimensions: 47 mm × 19 mm × 4.4 mm Features ● Temperature Sensing Function ● In Case of Abnormal Operaion, All Outputs Shut Down via the FO1, FO3, and SD Pins Connected Together ● Built-in Bootstrap Diodes with Current Limiting Resistors (22 Ω) ● CMOS-compatible Input (3.3 V or 5 V) ● Bare Lead Frame: Pb-free (RoHS Compliant) ● Isolation Voltage: 2500 V (for 1 min) UL-recognized Component (File No.: E118037) ● Fault Signal Output at Protection Activation ● Protections Include: Undervoltage Lockout for Power Supply High-side (UVLO_VB): Auto-restart Low-side (UVLO_VCC): Auto-restart Overcurrent Protection (OCP): Auto-restart Simultaneous On-state Prevention: Auto-restart Not to scale Selection Guide ● Power Device: IGBT + FRD (600 V) IO Part Number 10 A SCM1271MF 15 A SCM1272MF 20 A SCM1274MF 30 A SCM1276MF Applications For motor drives such as: ● ● ● ● ● Typical Application VCC VFO U1 SCM1270MF Series RFO 1 INT LS1 33 FO1 2 OCP1 CFO 3 LIN1 LIN1 4 COM1 MIC1 Refrigerator Compressor Motor Air Conditioner Compressor Motor Washing Machine Main Motor Fan Motor Pump Motor U 32 5 HIN1 HIN1 6 VCC1 31 Controller power supply 7 CBOOT1 DZVT VB1 8 HS1 LS2 9 SD 10 VT 11 LIN2 12 COM2 13 HIN2 Thermal LIN2 RVT HIN2 30 V MIC2 29 M Controller 14 VCC2 28 15 CBOOT2 VB2 16 HS2 17 LS3 FO3 27 18 OCP3 19 LIN3 LIN3 20 COM3 MIC3 W 26 21 HIN3 HIN3 22 VCC3 VDC VBB 25 VB3 24 HS3 23 CBOOT3 RO A/D CO DRS RS COM SCM1270MF-DSE Rev.1.5 SANKEN ELECTRIC CO., LTD. Dec. 26, 2018 https://www.sanken-ele.co.jp/en © SANKEN ELECTRIC CO., LTD. 2017 1 SCM1270MF Series Contents Description ------------------------------------------------------------------------------------------------------ 1 Contents --------------------------------------------------------------------------------------------------------- 2 1. Absolute Maximum Ratings----------------------------------------------------------------------------- 4 2. Recommended Operating Conditions ----------------------------------------------------------------- 5 3. Electrical Characteristics -------------------------------------------------------------------------------- 6 3.1. Characteristics of Control Parts------------------------------------------------------------------ 6 3.2. Bootstrap Diode Characteristics ----------------------------------------------------------------- 7 3.3. Thermal Resistance Characteristics ------------------------------------------------------------- 7 3.4. Transistor Characteristics ------------------------------------------------------------------------- 8 3.4.1. SCM1271MF ----------------------------------------------------------------------------------- 8 3.4.2. SCM1272MF ----------------------------------------------------------------------------------- 9 3.4.3. SCM1274MF ----------------------------------------------------------------------------------- 9 3.4.4. SCM1276MF --------------------------------------------------------------------------------- 10 4. Mechanical Characteristics --------------------------------------------------------------------------- 11 5. Insulation Distance -------------------------------------------------------------------------------------- 11 6. Truth Table ----------------------------------------------------------------------------------------------- 12 7. Block Diagram ------------------------------------------------------------------------------------------- 13 8. Pin Configuration Definitions------------------------------------------------------------------------- 14 9. Typical Applications ------------------------------------------------------------------------------------ 15 10. Physical Dimensions -----------------------------------------------------------------------------------10.1. Leadform 2552 ------------------------------------------------------------------------------------10.2. Leadform 2557 (Long Lead Type) ------------------------------------------------------------10.3. Reference PCB Hole Sizes ----------------------------------------------------------------------- 17 17 18 19 11. Marking Diagram --------------------------------------------------------------------------------------- 19 12. Functional Descriptions -------------------------------------------------------------------------------12.1. Turning On and Off the IC ---------------------------------------------------------------------12.2. Pin Descriptions ----------------------------------------------------------------------------------12.2.1. U, V, and W----------------------------------------------------------------------------------12.2.2. VB1, VB2, and VB3 ------------------------------------------------------------------------12.2.3. HS1, HS2, and HS3 ------------------------------------------------------------------------12.2.4. VCC1, VCC2, and VCC3 -----------------------------------------------------------------12.2.5. COM1, COM2, and COM3---------------------------------------------------------------12.2.6. HIN1, HIN2, and HIN3; LIN1, LIN2, and LIN3 -------------------------------------12.2.7. VBB -------------------------------------------------------------------------------------------12.2.8. LS1, LS2, and LS3 -------------------------------------------------------------------------12.2.9. OCP1 and OCP3----------------------------------------------------------------------------12.2.10. FO1 (U-phase) and FO3 (W-phase) -----------------------------------------------------12.2.11. SD (V-phase) --------------------------------------------------------------------------------12.2.12. VT ---------------------------------------------------------------------------------------------12.3. Temperature Sensing Function ----------------------------------------------------------------12.4. Protection Functions -----------------------------------------------------------------------------12.4.1. Fault Signal Output ------------------------------------------------------------------------12.4.2. Shutdown Signal Input --------------------------------------------------------------------12.4.3. Undervoltage Lockout for Power Supply (UVLO) ----------------------------------12.4.4. Overcurrent Protection (OCP) ----------------------------------------------------------12.4.5. Simultaneous On-state Prevention ------------------------------------------------------- 20 20 20 20 20 21 21 21 21 22 22 23 23 24 24 24 25 25 25 25 26 28 13. Design Notes ---------------------------------------------------------------------------------------------- 29 13.1. PCB Pattern Layout ------------------------------------------------------------------------------ 29 SCM1270MF-DSE Rev.1.5 SANKEN ELECTRIC CO., LTD. Dec. 26, 2018 https://www.sanken-ele.co.jp/en © SANKEN ELECTRIC CO., LTD. 2017 2 SCM1270MF Series 13.2. Considerations in Heatsink Mounting -------------------------------------------------------- 29 13.3. Considerations in IC Characteristics Measurement --------------------------------------- 29 14. Calculating Power Losses and Estimating Junction Temperature ---------------------------14.1. IGBT Steady-state Loss, PON -------------------------------------------------------------------14.2. IGBT Switching Loss, PSW ----------------------------------------------------------------------14.3. Estimating Junction Temperature of IGBT-------------------------------------------------- 30 30 31 31 15. Performance Curves -----------------------------------------------------------------------------------15.1. Transient Thermal Resistance Curves -------------------------------------------------------15.1.1. SCM1271MF --------------------------------------------------------------------------------15.1.2. SCM1272MF, SCM1274MF, SCM1276MF -------------------------------------------15.2. Performance Curves of Control Parts--------------------------------------------------------15.3. Performance Curves of Output Parts --------------------------------------------------------15.3.1. Output Transistor Performance Curves -----------------------------------------------15.3.2. Switching Losses ----------------------------------------------------------------------------15.4. Allowable Effective Current Curves ----------------------------------------------------------15.4.1. SCM1271MF --------------------------------------------------------------------------------15.4.2. SCM1272MF --------------------------------------------------------------------------------15.4.3. SCM1274MF --------------------------------------------------------------------------------15.4.4. SCM1276MF --------------------------------------------------------------------------------15.5. Short Circuit SOAs (Safe Operating Areas) ------------------------------------------------15.5.1. SCM1271MF --------------------------------------------------------------------------------15.5.2. SCM1272MF --------------------------------------------------------------------------------15.5.3. SCM1274MF --------------------------------------------------------------------------------15.5.4. SCM1276MF --------------------------------------------------------------------------------- 32 32 32 32 33 38 38 40 44 44 45 46 47 48 48 48 49 49 16. Pattern Layout Example ------------------------------------------------------------------------------- 50 17. Typical Motor Driver Application ------------------------------------------------------------------- 52 Important Notes ---------------------------------------------------------------------------------------------- 53 SCM1270MF-DSE Rev.1.5 SANKEN ELECTRIC CO., LTD. Dec. 26, 2018 https://www.sanken-ele.co.jp/en © SANKEN ELECTRIC CO., LTD. 2017 3 SCM1270MF Series 1. Absolute Maximum Ratings Current polarities are defined as follows: current going into the IC (sinking) is positive current (+); current coming out of the IC (sourcing) is negative current (−). Unless specifically noted, TA = 25 °C. Parameter Symbol Conditions Rating Unit Remarks Main Supply Voltage VBB–LSx VDC 450 V (DC) Main Supply Voltage VDC(SURGE) VBB–LSx 500 V (Surge) IGBT Breakdown VCC = 15 V, IC = 1 mA, VCES 600 V VIN = 0 V Voltage VCCx–COMx VCC 20 Logic Supply Voltage V VBx–HSx VBS 20 10 SCM1271MF 15 SCM1272MF TC = 25 °C Output Current(1) IO A 20 SCM1274MF 30 SCM1276MF 20 SCM1271MF SCM1272MF TC = 25 °C, PW ≤ 1ms, Output Current (Pulse) IOP 30 A single pulse SCM1274MF 45 SCM1276MF V −0.5 to 7 V −0.5 to 7 V −10 to 5 V TC(OP) −30 to 100 °C Tj Tstg 150 −40 to 150 °C °C 2500 V VIN FO Pin Voltage VFO SD Pin Voltage VSD OCP Pin Voltage VOCP Operating Case Temperature(2) Junction Temperature(3) Storage Temperature Isolation Voltage( 4) HINx–COMx, LINx–COMx FO1–COM1, FO3–COM3 SD–COM2 OCP1–COM1, OCP3–COM3 −0.5 to 7 Input Voltage VISO(RMS) Between surface of heatsink side and each pin; AC, 60 Hz, 1 min (1) Should be derated depending on an actual case temperature. See Section 15.4. Refers to a case temperature measured during IC operation. (3) Refers to the junction temperature of each chip built in the IC, including the monolithic ICs (MICs), transistors, and freewheeling diodes. (4) Refers to voltage conditions to be applied between the case and all pins. All pins have to be shorted. (2) SCM1270MF-DSE Rev.1.5 SANKEN ELECTRIC CO., LTD. Dec. 26, 2018 https://www.sanken-ele.co.jp/en © SANKEN ELECTRIC CO., LTD. 2017 4 SCM1270MF Series 2. Recommended Operating Conditions Parameter Symbol Conditions Min. Typ. Max. Unit VDC COM1 = COM2 = COM3, VBB–COM — 300 400 V VCC VCCx–COMx 13.5 — 16.5 V VBS VBx–HSx 13.5 — 16.5 V VIN 0 — 5.5 V tIN(MIN)ON 0.5 — — μs tIN(MIN)OFF 0.5 — — μs Dead Time of Input Signal tDEAD 1.5 — — μs FO Pin Pull-up Resistor RFO 1 — 22 kΩ FO Pin Pull-up Voltage FO Pin Noise Filter Capacitor VT Pin Pull-down Resistor Bootstrap Capacitor VFO 3.0 — 5.5 V CFO — — 1000 pF RVT 10 — — kΩ CBOOT 10 — 220 μF IP ≤ 45 A 12 — — IP ≤ 30 A 18 — — IP ≤ 20 A 27 — — Main Supply Voltage Logic Supply Voltage Input Voltage (HINx, LINx, FOx, and SD) Minimum Input Pulse Width Shunt Resistor RS mΩ RC Filter Resistor RO * — — 100 Ω RC Filter Capacitor CO * — — 8200 pF PWM Carrier Frequency fC — — 20 kHz Remarks SCM1276MF SCM1272MF SCM1274MF SCM1271MF * Requires the time constants that satisfy the following equation (see also Section 12.4.4): R O × CO < 0.82 µs . SCM1270MF-DSE Rev.1.5 SANKEN ELECTRIC CO., LTD. Dec. 26, 2018 https://www.sanken-ele.co.jp/en © SANKEN ELECTRIC CO., LTD. 2017 5 SCM1270MF Series 3. Electrical Characteristics Current polarities are defined as follows: current going into the IC (sinking) is positive current (+); current coming out of the IC (sourcing) is negative current (−). Unless otherwise specified, TA = 25 °C, VCC = 15 V. 3.1. Characteristics of Control Parts Parameter Symbol Conditions Min. Typ. Max. Unit Remarks Power Supply Operation Logic Operation Start Voltage VCC(ON) VCCx–COMx 10.5 11.5 12.5 V VBS(ON) VBx–HSx 10.5 11.5 12.5 V Logic Operation Stop Voltage VCC(OFF) VCCx–COMx 10.0 11.0 12.0 V VBS(OFF) VBx–HSx VCC1 = VCC2 = VCC3, COM1 = COM2 = COM3, VCC pin current in 3-phase operation VBx–HSx = 15 V, HINx = 5 V; VBx pin current in 1-phase operation 10.0 11.0 12.0 V — 3 — mA — 140 — μA VIH 1.5 2.0 2.5 V VIL 1.0 1.5 2.0 V ICC Logic Supply Current IBS Input Signal High Level Input Threshold Voltage (HINx, LINx, FOx, and SD) Low Level Input Threshold Voltage (HINx, LINx, FOx, and SD) High Level Input Current (HINx and LINx) Low Level Input Current (HINx and LINx) IIH VIN = 5 V — 230 500 μA IIL VIN = 0 V — — 2 μA VFOL VFO = 5 V, RFO = 10 kΩ — — 0.5 V VFOH VFO = 5 V, RFO = 10 kΩ 4.8 — — V VTRIP 0.46 0.50 0.54 V OCP Hold Time tP 20 26 — μs OCP Blanking Time tBK — 370 — ns 135 300 — ns 2.69 2.75 2.81 V Fault Signal Output FO Pin Voltage at Fault Signal Output FO Pin Voltage in Normal Operation Protection OCP Threshold Voltage SD Pin Filtering Time Temperature Sensing Voltage* VTRIP = 1 V tFIL(SD) VT Tj(MIC) = 125 °C, VRT = 10 kΩ * Determined by the junction temperature of the control parts, not of the output transistors. SCM1270MF-DSE Rev.1.5 SANKEN ELECTRIC CO., LTD. Dec. 26, 2018 https://www.sanken-ele.co.jp/en © SANKEN ELECTRIC CO., LTD. 2017 6 SCM1270MF Series 3.2. Bootstrap Diode Characteristics Parameter Symbol Bootstrap Diode Leakage Current Bootstrap Diode Forward Voltage Bootstrap Diode Series Resistor ILBD VFB 3.3. Conditions Min. Typ. Max. Unit VR = 600 V — — 10 μA IFB = 0.15 A — 1.1 1.3 V 17.6 22.0 26.4 Ω Min. Typ. Max. Unit — — 3.7 — — 3 — — 4.5 — — 4 RBOOT Remarks Thermal Resistance Characteristics Parameter Symbol R(j-c)Q (2) Conditions 1 element operating (IGBT) Junction-to-Case Thermal Resistance( 1) R(j-c)F (3) 1 element operating (freewheeling diode) °C/W °C/W Remarks SCM1271MF SCM1272MF SCM1274MF SCM1276MF SCM1271MF SCM1272MF SCM1274MF SCM1276MF (1) Refers to a case temperature at the measurement point described in Figure 3-1, below. Refers to steady-state thermal resistance between the junction of the built-in transistors and the case. For transient thermal characteristics, see Section 15.1. (3) Refers to steady-state thermal resistance between the junction of the built-in freewheeling diodes and the case. (2) 24 1 25 33 Measurement point Figure 3-1. Case Temperature Measurement Point SCM1270MF-DSE Rev.1.5 SANKEN ELECTRIC CO., LTD. Dec. 26, 2018 https://www.sanken-ele.co.jp/en © SANKEN ELECTRIC CO., LTD. 2017 7 SCM1270MF Series 3.4. Transistor Characteristics HINx/ LINx 0 trr ton td(on) tr ID/ IC toff td(off) tf 90% 10% 0 VDS/ VCE 0 Figure 3-2. Switching Characteristics Definitions 3.4.1. SCM1271MF Parameter Collector-to-Emitter Leakage Current Collector-to-Emitter Saturation Voltage Diode Forward Voltage Symbol Min. Typ. Max. Unit VCE = 600 V, VIN = 0 V — — 1 mA VCE(SAT) IC = 10 A, VIN = 5 V — 1.7 2.2 V VF IF = 10 A, VIN = 0 V — 1.7 2.2 V — 100 — ns — 700 — ns — 100 — ns — 1100 — ns tf — 90 — ns trr — 100 — ns — 700 — ns — 120 — ns — 1000 — ns — 100 — ns ICES Conditions High-side Switching Diode Reverse Recovery Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time trr td(on) tr td(off) VDC = 300 V, IC = 10 A, VIN = 0→5 V or 5→0 V, Tj = 25 °C, inductive load Low-side Switching Diode Reverse Recovery Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time td(on) tr td(off) VDC = 300 V, IC = 10 A, VIN = 0→5 V or 5→0 V, Tj = 25 °C, inductive load tf SCM1270MF-DSE Rev.1.5 SANKEN ELECTRIC CO., LTD. Dec. 26, 2018 https://www.sanken-ele.co.jp/en © SANKEN ELECTRIC CO., LTD. 2017 8 SCM1270MF Series 3.4.2. SCM1272MF Parameter Collector-to-Emitter Leakage Current Collector-to-Emitter Saturation Voltage Diode Forward Voltage Symbol Min. Typ. Max. Unit VCE = 600 V, VIN = 0 V — — 1 mA VCE(SAT) IC = 15 A, VIN = 5 V — 1.7 2.2 V VF IF = 15 A, VIN = 0 V — 1.75 2.2 V — 100 — ns — 700 — ns — 110 — ns — 1200 — ns tf — 100 — ns trr — 100 — ns — 800 — ns — 120 — ns — 1200 — ns — 100 — ns Min. Typ. Max. Unit VCE = 600 V, VIN = 0 V — — 1 mA VCE(SAT) IC = 20 A, VIN = 5 V — 1.7 2.2 V VF IF = 20 A, VIN = 0 V — 1.9 2.4 V — 100 — ns — 900 — ns — 160 — ns — 1300 — ns tf — 120 — ns trr — 100 — ns — 900 — ns — 190 — ns — 1300 — ns — 120 — ns ICES Conditions High-side Switching Diode Reverse Recovery Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time trr td(on) tr td(off) VDC = 300 V, IC = 15 A, VIN = 0→5 V or 5→0 V, Tj = 25 °C, inductive load Low-side Switching Diode Reverse Recovery Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time td(on) tr td(off) VDC = 300 V, IC = 15 A, VIN = 0→5 V or 5→0 V, Tj = 25 °C, inductive load tf 3.4.3. SCM1274MF Parameter Collector-to-Emitter Leakage Current Collector-to-Emitter Saturation Voltage Diode Forward Voltage Symbol ICES Conditions High-side Switching Diode Reverse Recovery Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time trr td(on) tr td(off) VDC = 300 V, IC = 20 A, VIN = 0→5 V or 5→0 V, Tj = 25 °C, inductive load Low-side Switching Diode Reverse Recovery Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time td(on) tr td(off) VDC = 300 V, IC = 20 A, VIN = 0→5 V or 5→0 V, Tj = 25 °C, inductive load tf SCM1270MF-DSE Rev.1.5 SANKEN ELECTRIC CO., LTD. Dec. 26, 2018 https://www.sanken-ele.co.jp/en © SANKEN ELECTRIC CO., LTD. 2017 9 SCM1270MF Series 3.4.4. SCM1276MF Parameter Collector-to-Emitter Leakage Current Collector-to-Emitter Saturation Voltage Diode Forward Voltage Symbol Min. Typ. Max. Unit VCE = 600 V, VIN = 0 V — — 1 mA VCE(SAT) IC = 30 A, VIN = 5 V — 1.7 2.2 V VF IF = 30 A, VIN = 0 V — 1.9 2.4 V — 100 — ns — 800 — ns — 150 — ns — 1200 — ns tf — 170 — ns trr — 100 — ns — 800 — ns — 180 — ns — 1200 — ns — 190 — ns ICES Conditions High-side Switching Diode Reverse Recovery Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time trr td(on) tr td(off) VDC = 300 V, IC = 30 A, VIN = 0→5 V or 5→0 V, Tj = 25 °C, inductive load Low-side Switching Diode Reverse Recovery Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time td(on) tr td(off) VDC = 300 V, IC = 30 A, VIN = 0→5 V or 5→0 V, Tj = 25 °C, inductive load tf SCM1270MF-DSE Rev.1.5 SANKEN ELECTRIC CO., LTD. Dec. 26, 2018 https://www.sanken-ele.co.jp/en © SANKEN ELECTRIC CO., LTD. 2017 10 SCM1270MF Series 4. Mechanical Characteristics Parameter Conditions Min. Typ. Max. Unit Heatsink Mounting * 0.588 — 0.784 N∙m Screw Torque Flatness of Heatsink See Figure 4-1. 0 — 200 μm Attachment Area Package Weight — 11.8 — g * When mounting a heatsink, it is recommended to use a metric screw of M3 and a plain washer of 7 mm (φ) together at each end of it. For more details about screw tightening, see Section 13.2. Heatsink Measurement position -+ - + Heatsink Figure 4-1. 5. Flatness Measurement Position Insulation Distance Parameter Clearance Conditions Min. Typ. Max. Unit Between heatsink* and leads. See Figure 5-1. 2.0 — 2.5 mm Creepage 3.86 — 4.26 mm * Refers to when a heatsink to be mounted is flat. If your application requires a clearance exceeding the maximum distance given above, use an alternative (e.g., a convex heatsink) that will meet the target requirement. Creepage Clearance Heatsink Figure 5-1. Insulation Distance Definitions SCM1270MF-DSE Rev.1.5 SANKEN ELECTRIC CO., LTD. Dec. 26, 2018 https://www.sanken-ele.co.jp/en © SANKEN ELECTRIC CO., LTD. 2017 11 SCM1270MF Series 6. Truth Table Table 6-1 is a truth table that provides the logic level definitions of operation modes. In the case where HINx and LINx signals in each phase are high at the same time, the simultaneous on-state prevention sets both the high- and low-side transistors off. After the IC recovers from a UVLO_VCC condition, the high- and low-side transistors resume switching, according to the input logic levels of the HINx and LINx signals (level-triggered). After the IC recovers from a UVLO_VB condition, the high-side transistors resume switching at the next rising edge of an HINx signal (edge-triggered). Table 6-1. Truth Table for Operation Modes Mode Normal Operation Shutdown Signal Input FO1/FO3/SD = L Undervoltage Lockout for High-side Power Supply (UVLO_VB) Undervoltage Lockout for Low-side Power Supply (UVLO_VCC) Overcurrent Protection (OCP) HINx LINx High-side Transistor Low-side Transistor L L OFF OFF H L ON OFF L H OFF ON H H OFF OFF L L OFF OFF H L OFF OFF L H OFF OFF H H OFF OFF L L OFF OFF H L OFF OFF L H OFF ON H H OFF OFF L L OFF OFF H L OFF OFF L H OFF OFF H H OFF OFF L L OFF OFF H L OFF OFF L H OFF OFF H H OFF OFF SCM1270MF-DSE Rev.1.5 SANKEN ELECTRIC CO., LTD. Dec. 26, 2018 https://www.sanken-ele.co.jp/en © SANKEN ELECTRIC CO., LTD. 2017 12 SCM1270MF Series 7. Block Diagram MIC1 1 FO1 UVLO_VCC Filter 3 µs 2 OCP1 3 LIN1 4 COM1 5 HIN1 6 VCC1 LS1 33 UVLO_VB Level shift Drive circuit HO1 Input logic U 32 Simultaneous on-state prevention OCP Drive circuit Filter 370 ns LO1 31 VB1 8 HS1 7 MIC2 9 10 SD VT 11 LIN2 12 COM2 13 HIN2 14 VCC2 LS2 UVLO_VB Filter 300 ns Level shift Drive circuit 30 HO2 Input logic V 29 Simultaneous on-state prevention Drive circuit Temperature sensing LO2 28 VB2 16 HS2 15 MIC3 17 FO3 UVLO_VCC Filter 3 µs 18 OCP3 19 LIN3 20 COM3 21 HIN3 22 VCC3 LS3 UVLO_VB Level shift Drive circuit HO3 Input logic W Simultaneous on-state prevention OCP Filter 370 ns Drive circuit 27 26 LO3 VBB 25 VB3 23 24 HS3 SCM1270MF-DSE Rev.1.5 SANKEN ELECTRIC CO., LTD. Dec. 26, 2018 https://www.sanken-ele.co.jp/en © SANKEN ELECTRIC CO., LTD. 2017 13 SCM1270MF Series 8. Pin Configuration Definitions Top view 1 24 1 33 24 25 Pin Number 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 Pin Name FO1 OCP1 LIN1 COM1 HIN1 VCC1 VB1 HS1 SD VT LIN2 COM2 HIN2 VCC2 VB2 HS2 FO3 OCP3 LIN3 COM3 HIN3 VCC3 VB3 HS3 VBB W LS3 VBB V LS2 VBB U LS1 25 Description U-phase fault signal output and shutdown signal input Input for U-phase overcurrent protection Logic input for U-phase low-side gate driver U-phase logic ground Logic input for U-phase high-side gate driver U-phase logic supply voltage input U-phase high-side floating supply voltage input U-phase high-side floating supply ground V-phase shutdown signal input Temperature sensing voltage output Logic input for V-phase low-side gate driver V-phase logic ground Logic input for V-phase high-side gate driver V-phase logic supply voltage input V-phase high-side floating supply voltage input V-phase high-side floating supply ground W-phase fault signal output and shutdown signal input Input for W-phase overcurrent protection Logic input for W-phase low-side gate driver W-phase logic ground Logic input for W-phase high-side gate driver W-phase logic supply voltage input W-phase high-side floating supply voltage input W-phase high-side floating supply ground Positive DC bus supply voltage W-phase output W-phase IGBT emitter (Pin trimmed) positive DC bus supply voltage V-phase output V-phase IGBT emitter (Pin trimmed) positive DC bus supply voltage U-phase output U-phase IGBT emitter SCM1270MF-DSE Rev.1.5 SANKEN ELECTRIC CO., LTD. Dec. 26, 2018 https://www.sanken-ele.co.jp/en © SANKEN ELECTRIC CO., LTD. 2017 33 14 SCM1270MF Series 9. Typical Applications CR filters and Zener diodes should be added to your application as needed. This is to protect each pin against surge voltages causing malfunctions, and to avoid the IC being used under the conditions exceeding the absolute maximum ratings where critical damage is inevitable. Then, check all the pins thoroughly under actual operating conditions to ensure that your application works flawlessly. VCC VFO U1 SCM1270MF Series RFO 1 INT LS1 33 FO1 2 OCP1 CFO 3 LIN1 LIN1 4 COM1 MIC1 U 32 5 HIN1 6 VCC1 HIN1 31 Controller power supply CBOOT1 DZVT VB1 7 8 HS1 LS2 9 SD 30 10 VT Thermal 11 LIN2 LIN2 12 COM2 RVT V MIC2 29 M 13 HIN2 HIN2 Controller 14 VCC2 28 VB2 16 HS2 15 CBOOT2 17 LS3 FO3 27 18 OCP3 19 LIN3 LIN3 20 COM3 MIC3 W 26 21 HIN3 HIN3 22 VCC3 VDC VBB 25 VB3 24 HS3 23 CBOOT3 RO A/D CO DRS RS COM Figure 9-1. Typical Application Using a Single Shunt Resistor SCM1270MF-DSE Rev.1.5 SANKEN ELECTRIC CO., LTD. Dec. 26, 2018 https://www.sanken-ele.co.jp/en © SANKEN ELECTRIC CO., LTD. 2017 15 SCM1270MF Series VCC VFO U1 SCM1270MF Series RFO 1 INT LS1 33 FO1 2 OCP1 CFO 3 LIN1 LIN1 4 COM1 MIC1 U 32 5 HIN1 6 VCC1 HIN1 31 Controller power supply VB1 8 HS1 7 CBOOT1 DZVT LS2 9 SD 30 10 VT Thermal 11 LIN2 LIN2 12 COM2 RVT V MIC2 29 M 13 HIN2 HIN2 Controller 14 VCC2 28 VB2 16 HS2 15 CBOOT2 17 LS3 FO3 27 18 OCP3 19 LIN3 LIN3 20 COM3 MIC3 W 26 21 HIN3 HIN3 22 VCC3 VDC VBB 25 VB3 24 HS3 23 CBOOT3 RO3 CO3 A/D CO2 RO2 CO1 RO1 RS3 COM DRS3 DRS2 DRS1 Figure 9-2. RS1 RS2 Typical Application Using Three Shunt Resistors SCM1270MF-DSE Rev.1.5 SANKEN ELECTRIC CO., LTD. Dec. 26, 2018 https://www.sanken-ele.co.jp/en © SANKEN ELECTRIC CO., LTD. 2017 16 SCM1270MF Series 10. Physical Dimensions 10.1. Leadform 2552 0.5 C 0.5 C (2.6) 8xP5.1=40.8 4.4±0.3 1.2±0.2 47±0.3 2 A +0.5 0 MAX1.2 （Root of pin） (5ﾟ) φ3.2±0.15 15.95±0.5 11.45±0.5 19±0.3 12.25±0.5 17.25±0.5 A (5ﾟ) B 43.3±0.3 B 2.08±0.2 11.2±0.5 5xP1.27=6.35 1.27 3.7 3.24 1.27 3.7 0.5 D 2 0.6 +0.2 -0.1 B-B +0.2 (11.6) 0.5 0.7 -0.1 A-A 0.5 +0.2 -0.1 +0.2 -0.1 C-C (38.6) +0.2 -0.1 0.5 D (2.6) 3.7 +0.2 -0.1 2.57 1.27 5xP1.27=6.35 +0.2 -0.1 5xP1.27=6.35 1.2 +0.2 -0.1 D-D Unit : mm SCM1270MF-DSE Rev.1.5 SANKEN ELECTRIC CO., LTD. Dec. 26, 2018 https://www.sanken-ele.co.jp/en © SANKEN ELECTRIC CO., LTD. 2017 17 SCM1270MF Series 10.2. Leadform 2557 (Long Lead Type) (0.65) 0.6 (2.6) C 0.6 C 8xP5.1=40.8 4.4±0.3 1.2±0.2 2 47±0.3 MAX1.2 ※ +0.2 0 （Root of pin） ) ( 11° A 0 to 0.5 Φ3.2±0.15 15.95±0.6 11.45±0.6 19±0.3 12.25±0.6 17.25±0.6 ※ A B 2.08±0.2 5xP1.27=6.35 5xP1.27=6.35 2.57 1.27 3.7 1.27 3.7 3.24 0 to 0.5 43.3±0.3 5xP1.27=6.35 (12°) B 14 to 14.8 1.27 3.7 2 0.6 +0.2 -0.1 B-B (11.5) +0.2 0.7 -0.1 A-A 0.5 -0.1 +0.2 0.5 -0.1 +0.2 C-C (38.5) +0.2 -0.1 0.5 +0.2 D 0.5 -0.1 (2.6) +0.2 -0.1 D 1.2 +0.2 -0.1 D-D Unit : mm SCM1270MF-DSE Rev.1.5 SANKEN ELECTRIC CO., LTD. Dec. 26, 2018 https://www.sanken-ele.co.jp/en © SANKEN ELECTRIC CO., LTD. 2017 18 SCM1270MF Series 10.3. Reference PCB Hole Sizes φ1.1 φ1.4 Pins 1 to 24 Pins 25 to 33 11. Marking Diagram 25 33 Branding Area 24 1 25 33 JAPAN 24 SCM127xMF Lot Number: Y is the last digit of the year of manufacture (0 to 9) M is the month of the year (1 to 9, O, N, or D) DD is the day of the month (01 to 31) X is the control number YMDDX 1 Part Number SCM1270MF-DSE Rev.1.5 SANKEN ELECTRIC CO., LTD. Dec. 26, 2018 https://www.sanken-ele.co.jp/en © SANKEN ELECTRIC CO., LTD. 2017 19 SCM1270MF Series 12. Functional Descriptions All the characteristic values given in this section are typical values, unless they are specified as minimum or maximum. For pin descriptions, this section employs a notation system that denotes a pin name with the arbitrary letter “x”, depending on context. The U-, V-, and W-phases are represented as the pin numbers 1, 2, and 3, respectively. Thus, “the VBx pin” is used when referring to any or all of the VB1, VB2, and VB3 pins. Also, when different pin names are mentioned as a pair (e.g., “the VBx and HSx pins”), they are meant to be the pins in the same phase. 12.1. Turning On and Off the IC The procedures listed below provide recommended startup and shutdown sequences. To turn on the IC properly, do not apply any voltage on the VBB, HINx, and LINx pins until the VCCx pin voltage has reached a stable state (VCC(ON) ≥ 12.5 V). It is required to fully charge bootstrap capacitors, CBOOTx, at startup (see Section 12.2.2). To turn off the IC, set the HINx and LINx pins to logic low (or “L”), and then decrease the VCCx pin voltage. 12.2. Pin Descriptions CBOOTx (µF) > 800 × t L(OFF) (s) (1) 10 µF ≤ CBOOTx ≤ 220 µF (2) τ = CBOOTx × R BOOTx , (3) In Equation (1), let tL(OFF) be the maximum off-time of the low-side transistor (i.e., the non-charging time of CBOOTx), measured in seconds. Even while the high-side transistor is off, voltage across the bootstrap capacitor keeps decreasing due to power dissipation in the IC. When the VBx pin voltage decreases to VBS(OFF) or less, the high-side undervoltage lockout (UVLO_VB) starts operating (see Section 12.4.3.1). Therefore, actual board checking should be done thoroughly to validate that voltage across the VBx pin maintains over 12.0 V (VBS > VBS(OFF)) during a low-frequency operation such as a startup period. As Figure 12-1 shows, a bootstrap diode, DBOOTx, and a current-limiting resistor, RBOOTx, are internally placed in series between the VCCx and VBx pins. Time constant for the charging time of CBOOTx, τ, can be computed by Equation (3): where CBOOTx is the optimized capacitance of the bootstrap capacitor, and RBOOTx is the resistance of the current-limiting resistor (22 Ω ± 20%). U1 VB1 7 CP1 12.2.1. U, V, and W These pins are the outputs of the three phases, and serve as the connection terminals to the 3-phase motor. The U, V, and W pins are internally connected to the HS1, HS2, and HS3 pins, respectively. HS1 DBOOT1 RBOOT1 31 VCC VBB HO 6 VCC1 4 MIC1 U COM1 32 Motor LO 12.2.2. VB1, VB2, and VB3 These are the inputs of the high-side floating power supplies for the individual phases. Voltages across the VBx and HSx pins should be maintained within the recommended range (i.e., the Logic Supply Voltage, VBS) given in Section 2. In each phase, a bootstrap capacitor, CBOOTx, should be connected between the VBx and HSx pins. For proper startup, turn on the low-side transistor first, then fully charge the bootstrap capacitor, CBOOTx. For the capacitance of the bootstrap capacitors, CBOOTx, choose the values that satisfy Equations (1) and (2). Note that capacitance tolerance and DC bias characteristics must be taken into account when you choose appropriate values for CBOOTx. CBOOT1 8 CDC VDC LS1 Figure 12-1. 33 RS1 Bootstrap Circuit Figure 12-2 shows an internal level-shifting circuit. A high-side output signal, HOx, is generated according to an input signal on the HINx pin. When an input signal on the HINx pin transits from low to high (rising edge), a “Set” signal is generated. When the HINx input signal transits from high to low (falling edge), a “Reset” signal is generated. These two signals are then transmitted to the high-side by the level-shifting circuit and are input to the SR flip-flop circuit. Finally, the SR flip-flop circuit feeds an output signal, Q (i.e., HOx). Figure 12-3 is a timing diagram describing how noise or other detrimental effects will improperly influence the SCM1270MF-DSE Rev.1.5 SANKEN ELECTRIC CO., LTD. Dec. 26, 2018 https://www.sanken-ele.co.jp/en © SANKEN ELECTRIC CO., LTD. 2017 20 SCM1270MF Series level-shifting process. When a noise-induced rapid voltage drop between the VBx and HSx pins (“VBx–HSx”) occurs after the Set signal generation, the next Reset signal cannot be sent to the SR flip-flop circuit. And the state of an HOx signal stays logic high (or “H”) because the SR flip-flop does not respond. With the HOx state being held high (i.e., the high-side transistor is in an on-state), the next LINx signal turns on the low-side transistor and causes a simultaneously-on condition, which may result in critical damage to the IC. To protect the VBx pin against such a noise effect, add a bootstrap capacitor, CBOOTx, in each phase. CBOOTx must be placed near the IC, and be connected between the VBx and HSx pins with a minimal length of traces. To use an electrolytic capacitor, add a 0.01 μF to 0.1 μF bypass capacitor, CPx, in parallel near these pins used for the same phase. U1 VBx S Input logic HINx Q HOx R Set Pulse generator Reset HSx COMx Figure 12-2. 12.2.4. VCC1, VCC2, and VCC3 These are the logic supply pins for the built-in pre-driver ICs. The VCC1, VCC2, and VCC3 pins must be externally connected on a PCB because they are not internally connected. To prevent malfunction induced by supply ripples or other factors, put a 0.01 μF to 0.1 μF ceramic capacitor, CVCCx, near these pins. To prevent damage caused by surge voltages, put an 18 V to 20 V Zener diode, DZ, between the VCCx and COMx pins. Voltages to be applied between the VCCx and COMx pins should be regulated within the recommended operational range of VCC, given in Section 2. 12.2.5. COM1, COM2, and COM3 These are the logic ground pins for the built-in pre-driver ICs. For proper control, the control parts in each phase must be connected to the corresponding ground pin. The COM1, COM2, and COM3 pins should be connected externally on a PCB because they are not internally connected. Varying electric potential of the logic ground can be a cause of improper operations. Therefore, connect the logic ground as close and short as possible to a shunt resistor, RS, at a single-point ground (or star ground) which is separated from the power ground (see Figure 12-4). Moreover, extreme care should be taken when wiring so that currents from the power ground do not affect the COMx pin. Internal Level-shifting Circuit U1 VDC VBB 25 CS HINx 4 COM1 CDC 0 Set 12 COM2 0 20 COM3 Reset LS1 33 LS2 30 RS LS3 27 0 VBx-HSx VBS(ON) VBS(OFF) OCP1, OCP3 0 Stays logic high Q Connect COM1, COM2, and COM3 on a PCB. Create a single-point ground (a star ground) near RS, but keep it separated from the power ground. 0 Figure 12-3. Waveforms at VBx–HSx Voltage Drop 12.2.3. HS1, HS2, and HS3 These pins are the grounds of the high-side floating power supplies for each phase, and are connected to the negative nodes of bootstrap capacitors, CBOOTx. The HS1, HS2, and HS3 pins are internally connected to the U, V, and W pins, respectively. Figure 12-4. Connections to Logic Ground 12.2.6. HIN1, HIN2, and HIN3; LIN1, LIN2, and LIN3 These are the input pins of the internal motor drivers for each phase. The HINx pin acts as a high-side controller; the LINx pin acts as a low-side controller. Figure 12-5 shows an internal circuit diagram of the HINx or LINx pin. This is a CMOS Schmitt trigger SCM1270MF-DSE Rev.1.5 SANKEN ELECTRIC CO., LTD. Dec. 26, 2018 https://www.sanken-ele.co.jp/en © SANKEN ELECTRIC CO., LTD. 2017 21 SCM1270MF Series circuit with a built-in 22 kΩ pull-down resistor, and its input logic is active high. Input signals across the HINx–COMx and the LINx–COMx pins in each phase should be set within the ranges provided in Table 12-1, below. Note that dead time setting must be done for HINx and LINx signals because the IC does not have a dead time generator. The higher PWM carrier frequency rises, the more switching loss increases. Hence, the PWM carrier frequency must be set so that operational case temperatures and junction temperatures have sufficient margins against the absolute maximum ranges, specified in Section 1. If the signals from the microcontroller become unstable, the IC may result in malfunctions. To avoid this event, the outputs from the microcontroller output line should not be high impedance. Also, if the traces from the microcontroller to the HINx or LINx pin (or both) are too long, the traces may be interfered by noise. Therefore, it is recommended to add an additional filter or a pull-down resistor near the HINx or LINx pin as needed (see Figure 12-6). Here are filter circuit constants for reference: - RIN1x: 33 Ω to 100 Ω - RIN2x: 1 kΩ to 10 kΩ - CINx: 100 pF to 1000 pF Care should be taken when adding RIN1x and RIN2x to the traces. When they are connected each other, the input voltage of the HINx and LINx pins becomes slightly lower than the output voltage of the microcontroller. Table 12-1. Input Signals for HINx and LINx Pins Parameter High Level Signal Low Level Signal Input Voltage Input Pulse Width PWM Carrier Frequency Dead Time 3 V < VIN < 5.5 V 0 V < VIN < 0.5 V ≥0.5 μs ≥0.5 μs U1 RIN1 Input signal HINx (LINx) RIN2 CIN SCM1270MF Controller Figure 12-6. Filter Circuit for HINx or LINx Pin 12.2.7. VBB This is the input pin for the main supply voltage, i.e., the positive DC bus. All of the IGBT collectors of the high-side are connected to this pin. Voltages between the VBB and COMx pins should be set within the recommended range of the main supply voltage, VDC, given in Section 2. To suppress surge voltages, put a 0.01 μF to 0.1 μF bypass capacitor, CS, near the VBB pin and an electrolytic capacitor, CDC, with a minimal length of PCB traces to the VBB pin. 12.2.8. LS1, LS2, and LS3 These are the emitter pins of the low-side IGBTs. For current detection, the LS1, LS2, and LS3 pins should be connected externally on a PCB via a shunt resistor, RS, to the COMx pin. Otherwise, malfunction may occur because a longer circuit trace increases its inductance and thus increases its susceptibility to improper operations. In applications where long PCB traces are required, add a fast recovery diode, DRS, between the LSx and COMx pins in order to prevent the IC from malfunctioning. U1 VBB 25 VDC CS ≤20 kHz ≥1.5 μs 4 COM1 CDC LS1 33 12 COM2 U1 5V RS LS2 30 20 COM3 DRS LS3 27 HINx (LINx) 2 kΩ 22 kΩ COMx OCP1, OCP3 Add a fast recovery diode to a long trace. Figure 12-7. Figure 12-5. Put a shunt resistor near the IC with a minimum length to the LSx pin. Connections to LSx Pin Internal Circuit Diagram of HINx or LINx Pin SCM1270MF-DSE Rev.1.5 SANKEN ELECTRIC CO., LTD. Dec. 26, 2018 https://www.sanken-ele.co.jp/en © SANKEN ELECTRIC CO., LTD. 2017 22 SCM1270MF Series VFO 12.2.9. OCP1 and OCP3 These pins serve as the inputs of the overcurrent protection (OCP) for monitoring the currents going through the output transistors. Section 12.4.4 provides further information about the OCP circuit configuration and its mechanism. U1 5V RFO 1 MΩ 2 kΩ FOx INT 50 Ω 3.0 µs (typ.) Blanking filter Output transistors turn-off CFO QFO COMx Internal Circuit Diagram of FOx Pin and Its Peripheral Circuit QFO ON FOx Pin Voltage tD(FO) VIL 0 Figure 12-9. FOx Pin Delay Time, tD(FO) Tj = 25°C 0.5 Fault Signal Voltage (V) Each pin operates as the fault signal output and shutdown signal input for the corresponding phase, the U- or W-phase. Sections 12.4.1 and 12.4.2 explain the two functions in detail, respectively. Figure 12-8 illustrates an internal circuit diagram of the FOx pin and its peripheral circuit. Because of its open-drain nature, each of the FOx pins should be tied by a pull-up resistor, RFO, to the external power supply. The external power supply voltage (i.e., the FO Pin Pull-up Voltage, VFO) should range from 3.0 V to 5.5 V. Figure 12-10 shows a relation between the FOx pin voltage and the pull-up resistor, RFO. When the pull-up resistor, RFO, has a too small resistance, the FOx pin voltage at fault signal output becomes high due to the on-resistance of a built-in MOSFET, QFO (Figure 12-8). Therefore, it is recommended to use a 1 kΩ to 22 kΩ pull-up resistor when the Low Level Input Threshold Voltage of the microcontroller, VIL, is set to 1.0 V. To suppress noise, add a filter capacitor, CFO, near the IC with minimizing a trace length between the FOx and COMx pins. Note that, however, this additional filtering allows a delay time, tD(FO), to occur, as seen in Figure 12-9. The delay time, tD(FO), is a period of time which starts when the IC receives a fault flag turning on the internal MOSFET, QFO, and continues until when the FOx pin reaches its threshold voltage (VIL) of 1.0 V or below (put simply, until the time when the IC detects a low state, “L”). Figure 12-11 shows how the delay time, tD(FO), and the noise filter capacitor, CFO, are related. To avoid the repetition of OCP activations, the external microcontroller must shut off any input signals to the IC within an OCP hold time, tP, which occurs after the internal MOSFET (QFO) turn-on. tP is 15 μs where minimum values of thermal characteristics are taken into account (for more details, see Section 12.4.4). When the Low Level Input Threshold Voltage of the microcontroller, VIL, is set to 1.0 V, CFO must be set to ≤1000 pF. This is because the V-phase delay time, tD(SD), at OCP activation is to be taken into account (see Section 12.2.11). Motor operation must be controlled by the external microcontroller so that it can immediately stop the motor when fault signals are detected. To resume motor operations thereafter, set the motor to be resumed after a lapse of ≥2 seconds. Figure 12-8. Max. 0.4 Typ. 0.3 Min. 0.2 0.1 0 0 2 4 6 8 10 RFO (kΩ) Figure 12-10. Fault Signal Voltage vs. Pull-up Resistor, RFO Tj = 25°C Max. 0.20 Delay Time, tD(FO) (µs) 12.2.10. FO1 (U-phase) and FO3 (W-phase) 0.15 Typ. 0.10 Min. 0.05 0.00 0 200 400 600 800 1000 CFO (pF) Figure 12-11. SCM1270MF-DSE Rev.1.5 SANKEN ELECTRIC CO., LTD. Dec. 26, 2018 https://www.sanken-ele.co.jp/en © SANKEN ELECTRIC CO., LTD. 2017 Delay Time, tD(FO) vs. Filter Capacitor, CFO 23 SCM1270MF Series 12.2.11. SD (V-phase) 12.2.12. VT This is the shutdown signal input for the V-phase. Figure 12-12 illustrates an internal circuit diagram of the SD pin and its peripheral circuit. The SD pin is connected to the FO1 and FO3 pins, allowing the V-phase output transistors to be shut down by a fault signal transmitted when one or more of the protections in either the U- or W-phase is activated. When the SD pin voltage decreases to the Low Level Input Threshold Voltage (VIL, 1.5 V) or less, and remains in this condition for a period of the SD Pin Filtering Time (tFIL(SD), 300 ns) or longer, the V-phase transistors turn off. Figure 12-14 shows a relation between tD(SD) and the capacitance of CFO. As defined in Figure 12-13, tD(SD) is a period of time from when the internal MOSFET (QFOx) is turned on by activated protections until the V-phase output (HO2) turns off. If, after the U- or W-phase OCP activation, an FOx signal detection by the SD pin takes too long, permanent damage to the V-phase output transistors may occur. Thus, the value of CFO must be set to ≤1000 pF. This pin outputs temperature sensing voltages. The external microcontroller can monitor the junction temperature of the internal control IC, not of the output transistors, with the VT pin. For more details, see Section 12.3. VFO 5V 500 kΩ RFO FO1 FO3 300 ns (typ.) 9 2 kΩ SD Blanking filter CFO 12.3. Temperature Sensing Function The microcontroller can monitor the junction temperature of the internal control IC, through temperature sensing voltages that the VT pin outputs. The SCM1270MF series does not include any protections against overtemperature, such as an IC shutdown or a fault flag. Therefore, the IC must be set to stop its operation as it detects an abnormal heating state with temperature sensing voltages. A typical example is turning off input signals from the microcontroller. Figure 12-15 shows a relation between the VT pin voltage and temperature. Table 12-2 and Table 12-3 provide the details of variations found in Figure 12-15. Temperature sensing voltages may exceed 3.0 V, causing permanent damage to the IC in the worst case. To protect the parts connected to the VT pin such as the microcontroller, add a clamp diode, DZVT, between the microcontroller power supply and the VT pin. 3.5 Output transistors turn-off COM2 Figure 12-12. Internal Circuit Diagram of SD Pin and Its Peripheral Circuit QFO1, QFO3 ON tD(FO) VT Pin Voltage (V) 12 Max. Typ. Min. 3.0 2.5 2.0 1.5 FO1, FO3, SD 25 50 75 100 125 150 Junction Temperature ,Tj(MIC) (°C) VIL tFIL(SD) Figure 12-15. VT Pin Voltage vs. Internal Control IC Junction Temperature, Tj(MIC) HO2 (V-phase) OFF tD(SD) Figure 12-13. Table 12-2. Tj(MIC) Variation on VT Pin Voltage V-phase Shutdown Period, tD(SD) Tj = 25°C Max. 0.6 tD(SD) (µs) 0.5 Typ. 0.4 VT Pin Voltage (V) 1.95 2.75 Tj(MIC) (°C) 50 ± 8 125 ± 5 Min. 0.3 0.2 Table 12-3. VT Pin Voltage Variation on Tj(MIC) 0.1 0 0 200 400 600 800 1000 CFO (pF) Figure 12-14. Delay Time, tD(SD) vs. Filter Capacitor, CFO Tj(MIC) (°C) 50 125 SCM1270MF-DSE Rev.1.5 SANKEN ELECTRIC CO., LTD. Dec. 26, 2018 https://www.sanken-ele.co.jp/en © SANKEN ELECTRIC CO., LTD. 2017 VT Pin Voltage (V) 1.95 ± 0.09 2.75 ± 0.06 24 SCM1270MF Series 12.4.2. Shutdown Signal Input Controller power supply DZVT Controller 10 VT The FO1, FO3, and SD pins can be the input pins of shutdown signals. When the FOx and SD pins become logic low, the high- and low-side transistors of each phase turn off. The voltages and pulse widths of shutdown signals should be set as listed in Table 12-4. CVT Table 12-4. Shutdown Signals COM2 12 Figure 12-16. VT Pin Peripheral Circuit 12.4. Protection Functions This section describes the various protection circuits provided in the SCM1270MF series. The protection circuits include the undervoltage lockout for power supplies (UVLO), the simultaneous on-state prevention, and the overcurrent protection (OCP). In case one or more of these protection circuits are activated, the FOx pin outputs a fault signal; as a result, the external microcontroller can stop the operations of the three phases by receiving the fault signal. The external microcontroller can also shut down the IC operations by inputting a fault signal to the FOx pin. In the following functional descriptions, “HOx” denotes a gate input signal on the high-side transistor, whereas “LOx” denotes a gate input signal on the low-side transistor (see also the diagram in Section 7). “VBx–HSx” refers to the voltages between the VBx and HSx pins. 12.4.1. Fault Signal Output In case one or more of the following protections are actuated, an internal transistor, QFOx, turns on, then the FOx pin becomes logic low (≤0.5 V). The FO1, FO3, and SD pins must be all connected by external traces. 1) Low-side undervoltage lockout (UVLO_VCC) 2) Overcurrent protection (OCP) 3) Simultaneous on-state prevention While the FOx pin is in the low state, the high- and low-side transistors of each phase turn off. In normal operation, the FOx pin outputs a high signal of 5 V. The fault signal output time of the FOx pin at OCP activation is the OCP hold time (tP) of 26 μs (typ.), fixed by a built-in feature of the IC itself (see Section 12.4.4). The external microcontroller receives the fault signals with its interrupt pin (INT), and must be programmed to put the HINx and LINx pins to logic low within the predetermined OCP hold time, tP. If you need to resume the motor operation thereafter, set the motor to be resumed after a lapse of ≥2 seconds. Parameter Input Voltage Input Pulse Width High Level Signal Low Level Signal 3 V < VIN < 5.5 V 0 V < VIN < 0.5 V ≥3.0 μs ≥3.0 μs The FO1, FO3, and SD pins must be all connected, as shown in Figure 12-17. If an abnormal condition is detected by either the U- and W-phase monolithic ICs (MICx), the high- and low-side transistors of all phases turn off. 1 FO1 INT U1 9 SD 17 FO3 RFO CFO VFO Figure 12-17. 4 COM1 12 COM2 20 COM3 All-phase Shutdown Circuit 12.4.3. Undervoltage Lockout for Power Supply (UVLO) In case the gate-driving voltages of the output transistors decrease, their steady-state power dissipations increase. This overheating condition may cause permanent damage to the IC in the worst case. To prevent this event, the SCM1270MF series has the undervoltage lockout (UVLO) circuits for both of the high- and low-side power supplies in each monolithic IC (MICx). 12.4.3.1. Undervoltage Lockout for High-side Power Supply (UVLO_VB) Figure 12-18 shows operational waveforms of the undervoltage lockout operation for high-side power supply (i.e., UVLO_VB). When the voltage between the VBx and HSx pins (VBx–HSx) decreases to the Logic Operation Stop SCM1270MF-DSE Rev.1.5 SANKEN ELECTRIC CO., LTD. Dec. 26, 2018 https://www.sanken-ele.co.jp/en © SANKEN ELECTRIC CO., LTD. 2017 25 SCM1270MF Series Voltage (VBS(OFF), 11.0 V) or less, the UVLO_VB circuit in the corresponding phase gets activated and sets an HOx signal to logic low. When the voltage between the VBx and HSx pins increases to the Logic Operation Start Voltage (VBS(ON), 11.5 V) or more, the IC releases the UVLO_VB condition. Then, the HOx signal becomes logic high at the rising edge of the first input command after the UVLO_VB release. Any fault signals are not output from the FOx pin during the UVLO_VB operation. In addition, the VBx pin has an internal UVLO_VB filter of about 3 μs, in order to prevent noise-induced malfunctions. HIN1/ HIN3 0 LIN1/ LIN3 0 About 3 µs VCCx UVLO_VCC operation VCC(ON) VCC(OFF) 0 FO1/ FO3 0 HO1/ HO3 HINx 0 0 LINx UVLO_VB operation VBx-HSx VBS(OFF) LOx responds to input signal. LO1/ LO3 0 0 VBS(ON) Figure 12-19. UVLO release 0 UVLO_VCC Operational Waveforms (U- or W-phase) No FOx output at UVLO_VB. FOx HIN2 0 About 3 µs HOx HOx restarts at positive edge after UVLO_VB release. 0 LIN2 0 0 UVLO_VCC operation VCCx LOx VCC(ON) VCC(OFF) 0 0 Figure 12-18. UVLO_VB Operational Waveforms About 3 µs FO1/ FO3 0 12.4.3.2. Undervoltage Lockout for Low-side Power Supply (UVLO_VCC) Figure 12-19 shows operational waveforms of the undervoltage lockout operation for low-side power supply (i.e., UVLO_VCC). The VCC1, VCC2, and VCC3 pins must be all connected by external traces on a PCB. When the VCCx pin voltage decreases to the Logic Operation Stop Voltage (VCC(OFF), 11.0 V) or less, the UVLO_VCC circuit in the corresponding phase gets activated and sets both of HOx and LOx signals to logic low. When the VCCx pin voltage increases to the Logic Operation Start Voltage (VCC(ON), 11.5 V) or more, the IC releases the UVLO_VCC operation. Then it resumes transmitting the HOx and LOx signals according to input commands on the HINx and LINx pins. During the UVLO_VCC operation, the FOx pin becomes logic low and sends fault signals. In addition, the VCCx pin has an internal UVLO_VCC filter of about 3 μs, in order to prevent noise-induced malfunctions. SD 0 HO2 0 tFIL(SD) tFIL(SD) LO2 responds to input signal. LO2 0 Figure 12-20. UVLO_VCC Operational Waveforms (V-phase) 12.4.4. Overcurrent Protection (OCP) The control ICs for the U- and W-phases have the overcurrent protection (OCP) circuit each. Figure 12-21 is an internal circuit diagram describing the OCPx pin and its peripheral circuit. The OCPx pin detects overcurrents with voltage across an external shunt resistor, RS. Because the OCPx pin is internally pulled SCM1270MF-DSE Rev.1.5 SANKEN ELECTRIC CO., LTD. Dec. 26, 2018 https://www.sanken-ele.co.jp/en © SANKEN ELECTRIC CO., LTD. 2017 26 SCM1270MF Series down, the OCPx pin voltage increases proportionally to a rise in the current running through the shunt resistor, RS. Figure 12-22 shows the OCP operational waveforms when the OCP1 pin (U-phase) or the OCP3 pin (W-phase) detects an overcurrent. When the OCPx pin voltage increases to the OCP Threshold Voltage (VTRIP, 0.50 V) or more, and remains in this condition for a period of the OCP Blanking Time (tBK, 370 ns) or longer, the OCPx circuit is activated. When an internal delay time (tDELAY) of 0.3 µs has elapsed after the OCP activation, the enabled OCPx circuit shuts off the corresponding output transistors and puts the FOx pin into a low state. Then, output current decreases as a result of the output transistors turn-off. Even if the OCPx pin voltage falls below VTRIP, the IC holds the FOx pin in the low state for a fixed OCP hold time (tP) of 26 μs (typ.). Then, the output transistors operate according to input signals. The V-phase control circuit being built without OPC, an overcurrent signal from the V-phase must be input to the OCPx pin that detects a U- or W-phase OCP signal. The V-phase SD pin is connected to the U- and W-phase FOx pins for this V-phase OCP alternative. When the OCPx pin detects overcurrents, the SD pin, as well as the FOx pin, goes into logic low, and then the V-phase output transistors turn off after a lapse of the SD Pin Filtering Time (tFIL(SD), 300 ns), as in Figure 12-23. A turn-off delay time of the V-phase output transistors depends on the capacitance of the FO pin capacitor, CFO. If the delay time is too long, the output transistors may be destroyed due to overcurrent. Thus, the value of CFO must be set to ≤1000 pF. The OCP is used for detecting abnormal conditions, such as an output transistor shorted. In case short-circuit conditions occur repeatedly, the output transistors can be destroyed. To prevent such event, motor operation must be controlled by the external microcontroller so that it can immediately stop the motor when fault signals are detected. The external microcontroller receives the fault signals with its interrupt pin (INT), and must be programmed to put the HINx and LINx pins to logic low within the predetermined OCP hold time, tP. If you need to resume the motor operation thereafter, set the motor to be resumed after a lapse of ≥2 seconds. For proper shunt resistor setting, your application must meet the following: ● Use the shunt resistor that has a recommended resistance, RS (see Section 2). ● Set the OCPx pin input voltage to vary within the rated OCP pin voltages, VOCP (see Section 1). ● Keep the current through the output transistors below the rated output current (pulse), IOP (see Section 1). It is required to use a resistor with low internal inductance because high-frequency switching current will flow through the shunt resistor, RS. In addition, choose a resistor with allowable power dissipation according to your application. When you connect a CR filter (i.e., a pair of a filter resistor, RO, and a filter capacitor, CO) to the OCPx pin, care should be taken in setting the time constants of RO and CO. The larger the time constant, the longer the time that the OCPx pin voltage rises to VTRIP. And this may cause permanent damage to the transistors. Consequently, a propagation delay of the IC must be taken into account when you determine the time constants. For RO and CO, their time constants must be set to ≤0.82 µs. The filter capacitor, CO, should also be placed near the IC, between the OCPx and COMx pins with a minimal length of traces. Note that overcurrents are undetectable when one or more of the U, V, and W pins or their traces are shorted to ground (ground fault). In case any of these pins falls into a state of ground fault, the output transistors may be destroyed. U1 VTRIP 2 kΩ OCPx VBB 2 kΩ + 100 kΩ Blanking filter 370 ns (typ.) CO Output transistors turn-off and QFO turn-on COMx LSx A/D RO DRS RS COM Figure 12-21. Internal Circuit Diagram of OCPx Pin and Its Peripheral Circuit HIN1/ HIN3 0 LIN1/ LIN3 0 tDELAY 0.3 µs (typ.) OCP1/ OCP3 tBK tBK tBK VTRIP 0 FOx restarts automatically after tP. FO1/ FO3 tP 0 HO1/ HO3 HOx responds to input signal. 0 LO1/ LO3 0 Figure 12-22. SCM1270MF-DSE Rev.1.5 SANKEN ELECTRIC CO., LTD. Dec. 26, 2018 https://www.sanken-ele.co.jp/en © SANKEN ELECTRIC CO., LTD. 2017 OCP Operational Waveforms (U- or W-phase) 27 SCM1270MF Series HIN2 0 LIN2 0 tDELAY 0.3 µs (typ.) tBK tBK tBK OCP2 VTRIP 0 FOx restarts automatically after tP. FO1/ FO3 tP 0 When logic high signals are asserted on the HINx and LINx pins at once, as in Figure 12-24, this function gets activated and turns the high- and low-side transistors off. Then, during the function is being enabled, the FOx pin becomes logic low and sends fault signals. After the IC comes out of the simultaneous on-state condition, “HOx” and “LOx” start responding in accordance with HINx and LINx input commands again. To prevent noise-induced malfunctions, the simultaneous on-state prevention circuit has a filter of about 0.8 μs. Note that this function does not have any of dead-time programming circuits. Therefore, input signals to the HINx and LIN pins must have proper dead times as defined in Section 12.2.6. SD 0 tFIL(SD) HO2 responds to input signal. HO2 0 tFIL(SD) LO2 0 Figure 12-23. OCP Operational Waveforms (V-phase) 12.4.5. Simultaneous On-state Prevention In case both of the HINx and LINx pins receive logic high signals at once, the high- and low-side transistors turn on at the same time, causing overcurrents to pass through. As a result, the switching transistors will be destroyed. To prevent this event, the simultaneous on-state prevention circuit is built into each of the monolithic ICs (MICx). Figure 12-24 shows operational waveforms of the simultaneous on-state prevention. Simultaneous on-state prevention enabled HINx 0 LINx 0 HOx About 0.8 µs 0 LOx About 0.8 µs 0 FOx 0 Figure 12-24. Operational Waveforms of Simultaneous On-state Prevention SCM1270MF-DSE Rev.1.5 SANKEN ELECTRIC CO., LTD. Dec. 26, 2018 https://www.sanken-ele.co.jp/en © SANKEN ELECTRIC CO., LTD. 2017 28 SCM1270MF Series 13. Design Notes This section also employs the notation system described in the beginning of the previous section. 13.1. PCB Pattern Layout Figure 13-1 shows a schematic diagram of a motor driver circuit. The motor driver circuit consists of current paths having high frequencies and high voltages, which also bring about negative influences on IC operation, noise interference, and power dissipation. Therefore, PCB trace layouts and component placements play an important role in circuit designing. Current loops, which have high frequencies and high voltages, should be as small and wide as possible, in order to maintain a low-impedance state. In addition, ground traces should be as wide and short as possible so that radiated EMI levels can be reduced. U1 VBB VDC 25 Section 4. ● When mounting a heatsink, it is recommended to use silicone greases. If a thermally conductive sheet or an electrically insulating sheet is used, package cracks may be occurred due to creases at screw tightening. Therefore, you should conduct thorough evaluations before using these materials. ● When applying a silicone grease, make sure that there must be no foreign substances between the IC and a heatsink. Extreme care should be taken not to apply a silicone grease onto any device pins as much as possible. The following requirements must be met for proper grease application: − Grease thickness: 100 μm − Heatsink flatness: ±100 μm − Apply a silicone grease within the area indicated in Figure 13-2, below. Screw hole 5.8 5.8 MIC3 W Screw hole M3 3.1 LS3 Ground traces should be wide and short. Figure 13-2. MIC2 29 V LS2 MIC1 U LS1 Figure 13-1. M3 Heatsink 26 27 Thermal silicone grease application area 37.6 3.1 Unit: mm Reference Application Area for Thermal Silicone Grease M 13.3. Considerations in IC Characteristics Measurement 30 32 33 High-frequency, high-voltage current loops should be as small and wide as possible. High-frequency, High-voltage Current Paths 13.2. Considerations in Heatsink Mounting The following are the key considerations and the guidelines for mounting a heatsink: ● It is recommended to use a pair of a metric screw of M3 and a plain washer of 7 mm (φ). To tighten the screws, use a torque screwdriver. Tighten the two screws firstly up to about 30% of the maximum screw torque, then finally up to 100% of the prescribed maximum screw torque. Perform appropriate tightening within the range of screw torque defined in When measuring the breakdown voltage or leakage current of the transistors incorporated in the IC, note that the gate and emitter of each transistor should have the same potential. Moreover, care should be taken when performing the measurements, because the collectors of the high-side transistors are all internally connected to the VBB pin. The output (U, V, and W) pins are connected to the emitters of the corresponding high-side transistors, whereas the LSx pins are connected to the emitters of the low-side transistors. The gates of the high-side transistors are pulled down to the corresponding output (U, V, and W) pins; similarly, the gates of the low-side transistors are pulled down to the COMx pins. When measuring the breakdown voltage or leakage current of the transistors incorporated in the IC, note that all of the output (U, V, and W), LSx, and COMx pins must be appropriately connected. Otherwise the switching transistors may result in permanent damage. The following are circuit diagrams representing typical measurement circuits for breakdown voltage: Figure 13-3 shows the high-side transistor (Q1H) in the U-phase; Figure 13-4 shows the low-side transistor (Q1L) SCM1270MF-DSE Rev.1.5 SANKEN ELECTRIC CO., LTD. Dec. 26, 2018 https://www.sanken-ele.co.jp/en © SANKEN ELECTRIC CO., LTD. 2017 29 SCM1270MF Series in the U-phase. And all the pins that are not represented in these figures are open. Before conducting a measurement, be sure to isolate the ground of the to-be-measured phase from those of other two phases not to be measured. Then, in each of the two phases, which are separated not to be measured, connect the LSx and COMx pins each other at the same potential, and leave them unused and floated. U1 VBB 25 Q1H 4 COM1 MIC1 U 32 V 14. Calculating Power Losses and Estimating Junction Temperature This section describes the procedures to calculate power losses in a switching transistor, and to estimate a junction temperature. Note that the descriptions listed here are applicable to the SCM1270MF series, which is controlled by a 3-phase sine-wave PWM driving strategy. Total power loss in an IGBT can be obtained by taking the sum of steady-state loss, PON, and switching loss, PSW. The following subsections contain the mathematical procedures to calculate the power losses in an IGBT and its junction temperature. For quick and easy references, we offer calculation support tools online. Please visit our website to find out more. ● DT0025: SCM1200MF Series Calculation Tool http://www.semicon.sanken-ele.co.jp/en/calc-tool/scm 12xxmf_caltool_en.html Q1L LS1 33 31 Q2H V 12 COM2 29 MIC2 14.1. IGBT Steady-state Loss, PON Q2L Steady-state loss in an IGBT can be computed by using the VCE(SAT) vs. IC curves, listed in Section 15.3.1. As expressed by the curves in Figure 14-1, linear approximations at a range the IC is actually used are obtained by: VCE(SAT) = α × IC + β. The values gained by the above calculation are then applied as parameters in Equation (4), below. Hence, the equation to obtain the IGBT steady-state loss, PON, is: LS2 30 Q3H 20 COM3 MIC3 W 26 Q3L LS3 27 Figure 13-3. Typical Measurement Circuit for High-side Transistor (Q1H) in U-phase U1 VBB 25 Q1H 4 COM1 U 32 MIC1 V Q1L LS1 33 31 Q2H 12 COM2 V 29 MIC2 Q2L PON = 1 π (φ) × IC (φ) × DT × dφ � V 2π 0 CE(SAT) 1 1 4 = α� + M × cos θ� IM 2 2 2 3π √2 1 π + β � + M × cos θ� IM . π 2 8 Where: VCE(SAT) is the collector-to-emitter voltage of the IGBT (V), IC is the collector current of the IGBT (A), DT is the duty cycle, which is given by LS2 30 Q3H 20 COM3 MIC3 W 26 Q3L LS3 27 Figure 13-4. Typical Measurement Circuit for Low-side Transistor (Q1L) in U-phase DT = (4) saturation 1 + M × sin(φ + θ) , 2 M is the modulation index (0 to 1), cosθ is the motor power factor (0 to 1), IM is the effective motor current (A), α is the slope of the linear approximation in the VCE(SAT) vs. IC curve, and β is the intercept of the linear approximation in the VCE(SAT) vs. IC curve. SCM1270MF-DSE Rev.1.5 SANKEN ELECTRIC CO., LTD. Dec. 26, 2018 https://www.sanken-ele.co.jp/en © SANKEN ELECTRIC CO., LTD. 2017 30 SCM1270MF Series VCC=15V 2.5 125°C VCE(SAT) (V) 2.0 y = 0.036x + 1.359 1.5 1.0 75°C 0.5 25°C y = 0.108x + 0.831 0.0 0 Figure 14-1. 1 2 3 4 5 IC (A) 6 7 8 9 10 Linear Approximate Equation of VCE(SAT) vs. IC Curve 14.2. IGBT Switching Loss, PSW Switching loss in an IGBT, PSW, can be calculated by Equation (5), letting IM be the effective current value of the motor: PSW = VDC √2 × fC × αE × IM × . π 300 (5) Where: fC is the PWM carrier frequency (Hz), VDC is the main power supply voltage (V), i.e., the VBB pin input voltage, and αE is the slope of the switching loss curve (see Section 15.3.2). 14.3. Estimating Junction Temperature of IGBT The junction temperature of an IGBT, Tj, can be estimated with Equation (6): Tj = R (j−C)Q × (PON + PSW ) + TC . (6) Where: R(j-c)Q is the junction-to-case thermal resistance per IGBT (°C/W), and TC is the case temperature (°C), measured at the point defined in Figure 3-1. SCM1270MF-DSE Rev.1.5 SANKEN ELECTRIC CO., LTD. Dec. 26, 2018 https://www.sanken-ele.co.jp/en © SANKEN ELECTRIC CO., LTD. 2017 31 SCM1270MF Series 15. Performance Curves 15.1. Transient Thermal Resistance Curves The following graphs represent transient thermal resistance (the ratios of transient thermal resistance), with steady-state thermal resistance = 1. 15.1.1. SCM1271MF Ratio of Transient Thermal Resistance 1.00 0.10 0.01 1 10 100 1000 10000 1000 10000 Time (ms) 15.1.2. SCM1272MF, SCM1274MF, SCM1276MF Ratio of Transient Thermal Resistance 1.00 0.10 0.01 1 10 100 Time (ms) SCM1270MF-DSE Rev.1.5 SANKEN ELECTRIC CO., LTD. Dec. 26, 2018 https://www.sanken-ele.co.jp/en © SANKEN ELECTRIC CO., LTD. 2017 32 SCM1270MF Series 15.2. Performance Curves of Control Parts Figure 15-1 to Figure 15-23 provide performance curves of the control parts integrated in the SCM1200MF series, including variety-dependent characteristics and thermal characteristics. Tj represents the junction temperature of the control parts. Table 15-1. Typical Characteristics of Control Parts Figure Number Figure 15-1 Figure 15-2 Figure 15-3 Figure 15-4 Figure 15-5 Figure 15-6 Figure 15-7 Figure 15-8 Figure 15-9 Figure 15-10 Figure 15-11 Figure 15-12 Figure 15-13 Figure 15-14 Figure 15-15 Figure 15-16 Figure 15-17 Figure 15-18 Figure 15-19 Figure 15-20 Figure 15-21 Figure 15-22 Figure 15-23 Figure Caption Logic Supply Current in 3-phase Operation, ICC vs. TC Logic Supply Current in 3-phase Operation, ICC vs. VCCx Pin Voltage, VCC Logic Supply Current in 1-phase Operation (HINx = 0 V), IBS vs. TC Logic Supply Current in 1-phase Operation (HINx = 5 V), IBS vs. TC Logic Supply Current in 1-phase Operation (HINx = 0 V), IBS vs. VBx Pin Voltage, VB Logic Operation Start Voltage, VBS(ON) vs. TC Logic Operation Stop Voltage, VBS(OFF) vs. TC Logic Operation Start Voltage, VCC(ON) vs. TC Logic Operation Stop Voltage, VCC(OFF) vs. TC UVLO_VB Filtering Time vs. TC UVLO_VCC Filtering Time vs. TC Input Current at High Level (HINx or LINx), IIN vs. TC High Level Input Signal Threshold Voltage, VIH vs. TC Low Level Input Signal Threshold Voltage, VIL vs. TC Minimum Transmittable Pulse Width for High-side Switching, tHIN(MIN) vs. TC Minimum Transmittable Pulse Width for Low-side Switching, tLIN(MIN) vs. TC FOx Pin Voltage in Normal Operation, VFOL vs. TC OCP Threshold Voltage, VTRIP vs. TC Blanking Time, tBK + Propagation Delay, tDELAY vs. TC OCP Hold Time, tP vs. TC Filtering Time of Simultaneous On-state Prevention vs. TC SD Pin Filtering Time, tFIL(SD) vs. TC V-phase Shutdown Period, tD(SD) vs. TC SCM1270MF-DSE Rev.1.5 SANKEN ELECTRIC CO., LTD. Dec. 26, 2018 https://www.sanken-ele.co.jp/en © SANKEN ELECTRIC CO., LTD. 2017 33 VCC x= 15 V, HINx = 0 V, LINx = 0 V 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 HIN x= 0 V, LINx = 0 V 4.0 Max. 3.5 3.0 Typ. Min. ICC (mA) ICC (mA) SCM1270MF Series 125°C 25°C 2.5 2.0 －30°C 1.5 1.0 0.5 0.0 -30 0 30 60 90 120 150 12 13 14 15 Figure 15-1. Logic Supply Current in 3-phase Operation, ICC vs. TC Figure 15-2. VBx = 15 V, HINx = 0 V 250 16 17 18 19 20 VCC (V) TC (°C) Logic Supply Current in 3-phase Operation, ICC vs. VCCx Pin Voltage, VCC VBx = 15 V, HINx = 5 V 250 Max. 200 150 Typ. 150 Min. 100 Typ. IBS (µA) IBS (µA) Max. 200 50 Min. 100 50 0 0 -30 0 30 60 90 120 150 -30 0 30 TC (°C) 120 150 12.50 VBx = 15 V 12.25 12.00 125°C 25°C －30°C VBS(ON) (V) IBS (µA) 90 Figure 15-4. Logic Supply Current in 1-phase Operation (HINx = 5 V), IBS vs. TC Figure 15-3. Logic Supply Current in 1-phase Operation (HINx = 0 V), IBS vs. TC 180 160 140 120 100 80 60 40 20 0 60 TC (°C) 11.75 Max. 11.50 Typ. 11.25 Min. 11.00 10.75 10.50 12 13 14 15 16 17 18 19 20 -30 0 Figure 15-5. Logic Supply Current in 1-phase Operation (HINx = 0 V), IBS vs. VBx Pin Voltage, VB 30 60 90 120 150 TC (°C) VB (V) Figure 15-6. Logic Operation Start Voltage, VBS(ON) vs. TC SCM1270MF-DSE Rev.1.5 SANKEN ELECTRIC CO., LTD. Dec. 26, 2018 https://www.sanken-ele.co.jp/en © SANKEN ELECTRIC CO., LTD. 2017 34 12.50 12.0 11.8 11.6 11.4 11.2 11.0 10.8 10.6 10.4 10.2 10.0 12.25 12.00 Max. Typ. Min. VCC(ON) (V) VBS(OFF) (V) SCM1270MF Series 11.75 Max. 11.50 Typ. 11.25 Min. 11.00 10.75 10.50 -30 0 30 60 90 120 150 -30 0 30 TC (°C) Logic Operation Stop Voltage, VBS(OFF) vs. TC 12.0 11.8 11.6 11.4 11.2 11.0 10.8 10.6 10.4 10.2 10.0 Max. Typ. Min. -30 0 30 60 90 120 150 Figure 15-8. UVLO_VB Filtering Time (µs) VCC(OFF) (V) Figure 15-7. 120 150 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 Max. Typ. Min. -30 0 30 60 90 120 150 TC (°C) Figure 15-10. Logic Operation Stop Voltage, VCC(OFF) vs. TC 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 UVLO_VB Filtering Time vs. TC INHx or INLx = 5 V 400 Max. Typ. Min. IIN (µA) UVLO_VCC Filtering Time (µs) 90 Logic Operation Start Voltage, VCC(ON) vs. TC TC (°C) Figure 15-9. 60 TC (°C) 350 Max. 300 Typ. 250 Min. 200 150 100 50 0 -30 0 30 60 90 120 150 -30 TC (°C) Figure 15-11. UVLO_VCC Filtering Time vs. TC 0 30 60 90 120 150 TC (°C) Figure 15-12. SCM1270MF-DSE Rev.1.5 SANKEN ELECTRIC CO., LTD. Dec. 26, 2018 https://www.sanken-ele.co.jp/en © SANKEN ELECTRIC CO., LTD. 2017 Input Current at High Level (HINx or LINx), IIN vs. TC 35 SCM1270MF Series 2.6 2.0 2.4 1.8 2.0 Max. 1.8 Typ. 1.6 1.6 VIL (V) VIH (V) 2.2 Min. 1.4 Max. 1.4 Typ. 1.2 Min. 1.0 1.2 1.0 0.8 -30 0 30 60 90 120 150 -30 0 30 TC (°C) 500 450 400 350 300 250 200 150 100 50 0 Max. Typ. Min. -30 0 Figure 15-14. High Level Input Signal Threshold Voltage, VIH vs. TC 30 60 90 120 tLIN(MIN) (ns) tHIN(MIN) (ns) Figure 15-13. 90 120 150 150 Low Level Input Signal Threshold Voltage, VIL vs. TC 500 450 400 350 300 250 200 150 100 50 0 Max. Typ. Min. -30 0 30 TC (°C) 60 90 120 150 TC (°C) Figure 15-15. Minimum Transmittable Pulse Width for High-side Switching, tHIN(MIN) vs. TC Figure 15-16. Minimum Transmittable Pulse Width for Low-side Switching, tLIN(MIN) vs. TC FOx pull-up voltage = 5 V, RFO = 3.3 kΩ, FOx in logic low 300 60 TC (°C) 540 530 250 VFOL (mV) Max. Typ. Min. 150 100 VTRIP (mV) 520 200 Max. 510 Typ. 500 490 Min. 480 50 470 0 460 -30 0 30 60 90 120 150 -30 TC (°C) Figure 15-17. FOx Pin Voltage in Normal Operation, VFOL vs. TC 0 30 60 90 120 150 TC (°C) Figure 15-18. SCM1270MF-DSE Rev.1.5 SANKEN ELECTRIC CO., LTD. Dec. 26, 2018 https://www.sanken-ele.co.jp/en © SANKEN ELECTRIC CO., LTD. 2017 OCP Threshold Voltage, VTRIP vs. TC 36 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 Max. Typ. tP (µs) tBK + tDELAY (µs) SCM1270MF Series Min. -30 0 30 60 90 120 50 45 40 35 30 25 20 15 10 5 0 Max. Typ. Min. -30 150 0 30 TC (°C) Figure 15-20. Blanking Time, tBK + Propagation Delay, tDELAY vs. TC 1.4 1.2 Max. 1.0 0.8 Typ. 0.6 Min. 0.4 0.2 0.0 -30 0 30 60 90 150 120 150 OCP Hold Time, tP vs. TC Max. Typ. Min. -30 0 30 60 90 120 150 TC (°C) Filtering Time of Simultaneous On-state Prevention vs. TC Figure 15-22. SD Pin Filtering Time, tFIL(SD) vs. TC CFO = 1000 pF 0.7 0.6 tD(SD) (µs) 120 0.50 0.45 0.40 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0.00 TC (°C) Figure 15-21. 90 TC (°C) tFIL(SD) (µs) Filtering Time of Simultaneous On-state Prevention (µs) Figure 15-19. 60 Max. 0.5 Typ. 0.4 Min. 0.3 0.2 0.1 0.0 -30 0 30 60 90 120 150 TC (°C) Figure 15-23. V-phase Shutdown Period, tD(SD) vs. TC SCM1270MF-DSE Rev.1.5 SANKEN ELECTRIC CO., LTD. Dec. 26, 2018 https://www.sanken-ele.co.jp/en © SANKEN ELECTRIC CO., LTD. 2017 37 SCM1270MF Series 15.3. Performance Curves of Output Parts 15.3.1. Output Transistor Performance Curves 15.3.1.1. SCM1271MF VCCx = 15 V 2.5 2.0 2.0 1.5 1.5 VF (V) VCE(SAT) (V) 2.5 1.0 125°C 75°C 25°C 0.5 0.5 0.0 0 1 2 1.0 3 4 5 6 7 8 9 25°C 125°C 75°C 0.0 10 0 1 2 3 4 5 IF (A) IC (A) Figure 15-24. IGBT VCE(SAT) vs. IC Figure 15-25. 6 7 8 9 10 Freewheeling Diode VF vs. IF 15.3.1.2. SCM1272MF VCCx = 15 V 2.5 2.5 2.0 VF (V) VCE(SAT) (V) 2.0 1.5 1.0 125°C 75°C 0.5 1.5 1.0 25°C 75°C 0.5 25°C 125°C 0.0 0.0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 0 1 2 3 IGBT VCE(SAT) vs. IC 5 6 7 8 9 10 11 12 13 14 15 IF (A) IC (A) Figure 15-26. 4 Figure 15-27. SCM1270MF-DSE Rev.1.5 SANKEN ELECTRIC CO., LTD. Dec. 26, 2018 https://www.sanken-ele.co.jp/en © SANKEN ELECTRIC CO., LTD. 2017 Freewheeling Diode VF vs. IF 38 SCM1270MF Series 15.3.1.3. SCM1274MF VCCx = 15 V 2.5 2.0 2.0 1.5 1.5 VF (V) VCE(SAT) (V) 2.5 1.0 125°C 0.5 125°C75°C 0.0 0.0 2 25°C 0.5 75°C 25°C 0 1.0 4 6 8 10 12 14 16 18 0 20 2 4 6 10 12 14 16 18 20 IF (A) IC (A) Figure 15-28. 8 IGBT VCE(SAT) vs. IC Figure 15-29. Freewheeling Diode VF vs. IF 15.3.1.4. SCM1276MF VCCx = 15 V 2.5 2.0 2.0 1.5 1.5 VF (V) VCE(SAT) (V) 2.5 1.0 125°C 0.5 25°C 1.0 25°C 0.5 75°C 125°C 0.0 75°C 0.0 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 0 2 4 6 IC (A) Figure 15-30. IGBT VCE(SAT) vs. IC 8 10 12 14 16 18 20 22 24 26 28 30 IF (A) Figure 15-31. SCM1270MF-DSE Rev.1.5 SANKEN ELECTRIC CO., LTD. Dec. 26, 2018 https://www.sanken-ele.co.jp/en © SANKEN ELECTRIC CO., LTD. 2017 Freewheeling Diode VF vs. IF 39 SCM1270MF Series 15.3.2. Switching Losses Conditions: VBB = 300 V, half-bridge circuit with inductive load. 15.3.2.1. SCM1271MF 400 E (µJ) Turn-on 200 100 200 100 Turn-off 0 0 1 2 3 4 5 6 7 Turn-off 0 8 9 10 0 1 2 3 IC (A) High-side Switching Loss (Tj = 25 °C) VBx = 15 V 500 400 Figure 15-33. 5 6 7 8 9 10 Low-side Switching Loss (Tj = 25 °C) VCCx = 15 V 500 SCM12171MF Figure 15-32. 4 IC (A) Turn-on 400 SCM1271MF E (µJ) Turn-on 300 300 300 300 200 E (µJ) E (µJ) SCM1271MF 400 VCCx = 15 V 500 SCM1271MF VBx = 15 V 500 Turn-on 200 Turn-off 100 100 Turn-off 0 0 1 2 3 4 0 5 6 7 8 9 10 0 1 IC (A) Figure 15-34. High-side Switching Loss (Tj = 125 °C) 2 3 4 5 6 7 8 9 10 IC (A) Figure 15-35. SCM1270MF-DSE Rev.1.5 SANKEN ELECTRIC CO., LTD. Dec. 26, 2018 https://www.sanken-ele.co.jp/en © SANKEN ELECTRIC CO., LTD. 2017 Low-side Switching Loss (Tj = 125 °C) 40 SCM1270MF Series 15.3.2.2. SCM1272MF Turn-off Turn-on 500 400 400 E (µJ) 300 200 Turn-on 100 300 200 Turn-off 100 0 0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 0 1 2 3 4 5 IC (A) High-side Switching Loss (Tj = 25 °C) 600 Turn-off 500 E (µJ) 7 8 9 10 11 12 13 14 15 400 300 Turn-on Low-side Switching Loss (Tj = 25 °C) VCCx = 15 V 700 600 Turn-on 500 E (µJ) VBx = 15 V 700 Figure 15-37. SCM12172MF Figure 15-36. 6 IC (A) SCM1272MF E (µJ) 500 600 SCM1272MF 600 VCCx = 15 V 700 SCM1272MF VBx = 15 V 700 400 300 200 200 100 100 Turn-off 0 0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 0 1 2 IC (A) Figure 15-38. High-side Switching Loss (Tj = 125 °C) 3 4 5 6 7 8 9 10 11 12 13 14 15 IC (A) Figure 15-39. SCM1270MF-DSE Rev.1.5 SANKEN ELECTRIC CO., LTD. Dec. 26, 2018 https://www.sanken-ele.co.jp/en © SANKEN ELECTRIC CO., LTD. 2017 Low-side Switching Loss (Tj = 125 °C) 41 SCM1270MF Series 15.3.2.3. SCM1274MF 600 400 Turn-off 200 Turn-on 800 Turn-on E (µJ) 600 400 Turn-off 200 0 0 0 2 4 6 8 10 12 14 16 18 20 0 2 4 6 IC (A) High-side Switching Loss (Tj = 25 °C) VBx = 15 V 1200 1000 600 Turn-on 400 10 12 14 16 18 20 Low-side Switching Loss (Tj = 25 °C) VCCx = 15 V 1200 1000 Turn-on 800 E (µJ) E (µJ) 800 Figure 15-41. SCM12174MF Figure 15-40. 8 IC (A) SCM1274MF E (µJ) 800 1000 SCM1274MF 1000 VCCx = 15 V 1200 SCM1274MF VBx = 15 V 1200 600 400 Turn-off 200 200 Turn-off 0 0 0 2 4 6 8 10 12 14 16 18 20 0 2 IC (A) Figure 15-42. High-side Switching Loss (Tj = 125 °C) 4 6 8 10 12 14 16 18 20 IC (A) Figure 15-43. SCM1270MF-DSE Rev.1.5 SANKEN ELECTRIC CO., LTD. Dec. 26, 2018 https://www.sanken-ele.co.jp/en © SANKEN ELECTRIC CO., LTD. 2017 Low-side Switching Loss (Tj = 125 °C) 42 SCM1270MF Series 15.3.2.4. SCM1276MF SCM1276MF 1200 Turn-off Turn-off 1200 1000 800 800 E (µJ) 600 400 Turn-on 200 600 Turn-on 400 200 0 0 0 5 10 15 20 25 30 0 5 10 IC (A) High-side Switching Loss (Tj = 25 °C) VBx = 15 V 1400 1200 Turn-off 800 E (µJ) E (µJ) 1000 600 Turn-on 400 200 0 0 5 10 15 20 25 Figure 15-45. SCM1276MF Figure 15-44. 20 25 30 30 High-side Switching Loss (Tj = 125 °C) Low-side Switching Loss (Tj = 25 °C) VCCx = 15 V 1800 1600 1400 1200 1000 800 600 400 200 0 Turn-off Turn-on 0 IC (A) Figure 15-46. 15 IC (A) SCM1276MF E (µJ) 1000 VCCx = 15 V 1400 SCM1276MF VBx = 15 V 1400 5 10 15 20 25 30 IC (A) Figure 15-47. SCM1270MF-DSE Rev.1.5 SANKEN ELECTRIC CO., LTD. Dec. 26, 2018 https://www.sanken-ele.co.jp/en © SANKEN ELECTRIC CO., LTD. 2017 Low-side Switching Loss (Tj = 125 °C) 43 SCM1270MF Series 15.4. Allowable Effective Current Curves The following curves represent allowable effective currents in 3-phase sine-wave PWM driving with parameters such as typical VCE(SAT) and typical switching losses. Operating conditions: VBB pin input voltage, VDC = 300 V; VCC pin input voltage, VCC = 15 V; modulation index, M = 0.9; motor power factor, cosθ = 0.8; junction temperature, Tj = 150 °C. Allowable Effective Current Curves (Arms) 15.4.1. SCM1271MF fC = 2 kHz 10 8 6 4 2 0 25 50 75 100 125 150 TC (°C) Figure 15-48. Allowable Effective Current (fC = 2 kHz): SCM1271MF fC = 16 kHz Allowable Effective Current Curves (Arms) 10 8 6 4 2 0 25 50 75 100 125 150 TC (°C) Figure 15-49. Allowable Effective Current (fC = 16 kHz): SCM1271MF SCM1270MF-DSE Rev.1.5 SANKEN ELECTRIC CO., LTD. Dec. 26, 2018 https://www.sanken-ele.co.jp/en © SANKEN ELECTRIC CO., LTD. 2017 44 SCM1270MF Series 15.4.2. SCM1272MF fC = 2 kHz Allowable Effective Current Curves (Arms) 15 10 5 0 25 50 75 100 125 150 TC (°C) Figure 15-50. Allowable Effective Current (fC = 2 kHz): SCM1272MF fC = 16 kHz Allowable Effective Current Curves (Arms) 15 10 5 0 25 50 75 100 125 150 TC (°C) Figure 15-51. Allowable Effective Current (fC = 16 kHz): SCM1272MF SCM1270MF-DSE Rev.1.5 SANKEN ELECTRIC CO., LTD. Dec. 26, 2018 https://www.sanken-ele.co.jp/en © SANKEN ELECTRIC CO., LTD. 2017 45 SCM1270MF Series 15.4.3. SCM1274MF fC = 2 kHz Allowable Effective Current Curves (Arms) 20 15 10 5 0 25 50 75 100 125 150 TC (°C) Allowable Effective Current Curves (Arms) Figure 15-52. Allowable Effective Current (fC = 2 kHz): SCM1274MF fC = 16 kHz 20 15 10 5 0 25 50 75 100 125 150 TC (°C) Figure 15-53. Allowable Effective Current (fC = 16 kHz): SCM1274MF SCM1270MF-DSE Rev.1.5 SANKEN ELECTRIC CO., LTD. Dec. 26, 2018 https://www.sanken-ele.co.jp/en © SANKEN ELECTRIC CO., LTD. 2017 46 SCM1270MF Series 15.4.4. SCM1276MF fC = 2 kHz Allowable Effective Current Curves (Arms) 30 25 20 15 10 5 0 25 50 75 100 125 150 TC (°C) Figure 15-54. Allowable Effective Current (fC = 2 kHz): SCM1276MF fC = 16 kHz Allowable Effective Current Curves (Arms) 30 25 20 15 10 5 0 25 50 75 100 125 150 TC (°C) Figure 15-55. Allowable Effective Current (fC = 16 kHz): SCM1276MF SCM1270MF-DSE Rev.1.5 SANKEN ELECTRIC CO., LTD. Dec. 26, 2018 https://www.sanken-ele.co.jp/en © SANKEN ELECTRIC CO., LTD. 2017 47 SCM1270MF Series 15.5. Short Circuit SOAs (Safe Operating Areas) Conditions: VDC ≤ 400 V, 13.5 V ≤ VCC ≤ 16.5 V, Tj = 125°C, 1 pulse. 15.5.1. SCM1271MF Collector Current, IC(PEAK) (A) 200 150 100 Short Circuit SOA 50 0 0 1 2 3 4 5 3 4 5 Pulse Width (µs) 15.5.2. SCM1272MF 250 Collector Current, IC(PEAK) (A) 200 150 100 Short Circuit SOA 50 0 0 1 2 Pulse Width (µs) SCM1270MF-DSE Rev.1.5 SANKEN ELECTRIC CO., LTD. Dec. 26, 2018 https://www.sanken-ele.co.jp/en © SANKEN ELECTRIC CO., LTD. 2017 48 SCM1270MF Series 15.5.3. SCM1274MF 300 Collector Current, IC(PEAK) (A) 250 200 150 Short Circuit SOA 100 50 0 0 1 2 3 4 5 3 4 5 Pulse Width (µs) 15.5.4. SCM1276MF 400 Collector Current, IC(PEAK) (A) 350 300 250 200 150 Short Circuit SOA 100 50 0 0 1 2 Pulse Width (µs) SCM1270MF-DSE Rev.1.5 SANKEN ELECTRIC CO., LTD. Dec. 26, 2018 https://www.sanken-ele.co.jp/en © SANKEN ELECTRIC CO., LTD. 2017 49 SCM1270MF Series 16. Pattern Layout Example This section contains the schematic diagrams of a PCB pattern layout example using an SCM1270MF series device. For reference terminal hole sizes, see Section 10.3. IPM1 SV3 SV1 SV2 Figure 16-1. Figure 16-2. Top View Bottom View SCM1270MF-DSE Rev.1.5 SANKEN ELECTRIC CO., LTD. Dec. 26, 2018 https://www.sanken-ele.co.jp/en © SANKEN ELECTRIC CO., LTD. 2017 50 SCM1270MF Series IPM1 LS1 33 1 FO1 R17 2 OCP1 C20 3 LIN1 4 COM1 C17 C14 U 32 5 HIN1 6 VCC1 31 7 VB1 8 HS1 C1 LS2 30 9 SD 10 VT 11 LIN2 12 COM2 1 2 3 V 29 13 HIN2 1 R19 C18 2 3 4 5 6 7 8 9 10 C15 R6 R4 R5 R7 R8 R9 R10 15 VB2 LS3 27 17 FO3 18 OCP3 19 LIN3 20 COM3 W 26 21 HIN3 C19 C5 C6 C7 C8 C9 C10 C11 13 SV3 28 16 HS2 C2 11 12 14 VCC2 C16 SV1 JP1 JP2 22 VCC3 VBB 25 1 23 VB3 24 HS3 2 C3 SV2 Figure16-3. D7 D6 D5 D1 C23 R14 R1 D2 C24 R15 R2 C21 D3 C25 R16 R3 C13 R18 C4 D4 R13 R12 R11 Circuit Diagram of PCB Pattern Layout Example SCM1270MF-DSE Rev.1.5 SANKEN ELECTRIC CO., LTD. Dec. 26, 2018 https://www.sanken-ele.co.jp/en © SANKEN ELECTRIC CO., LTD. 2017 51 SCM1270MF Series 17. Typical Motor Driver Application This section contains the information on the typical motor driver application listed in the previous section, including a circuit diagram, specifications, and the bill of the materials used. ● Motor Driver Specifications IC Main Supply Voltage, VDC Rated Output Power SCM1272MF 300 VDC (typ.) 1.35 kW ● Circuit Diagram See Figure16-3. ● Bill of Materials Symbol Part Type Ratings Symbol Part Type Ratings C1 Electrolytic 47 μF, 50 V D5 General 1 A, 50 V C2 Electrolytic 47 μF, 50 V D6 General 1 A, 50 V C3 Electrolytic 47 μF, 50 V D7 General 1 A, 50 V C4 Electrolytic 100 μF, 50 V R1* Metal plate 18 mΩ, 2 W C5 Ceramic 100 pF, 50 V R2* Metal plate 18 mΩ, 2 W C6 Ceramic 100 pF, 50 V R3* Metal plate 18 mΩ, 2 W C7 Ceramic 100 pF, 50 V R4 General 100 Ω, 1/8 W C8 Ceramic 100 pF, 50 V R5 General 100 Ω, 1/8 W C9 Ceramic 100 pF, 50 V R6 General 100 Ω, 1/8 W C10 Ceramic 100 pF, 50 V R7 General 100 Ω, 1/8 W C11 Ceramic 100 pF, 50 V R8 General 100 Ω, 1/8 W C13 Ceramic 4700 pF, 50 V R9 General 100 Ω, 1/8 W C14 Ceramic 0.1 μF, 50 V R10 General 100 Ω, 1/8 W C15 Ceramic 0.1 μF, 50 V R11 General 200 Ω, 1/8 W C16 Ceramic 0.1 μF, 50 V R12 General 200 Ω, 1/8 W C17 Ceramic 0.1 μF, 50 V R13 General 200 Ω, 1/8 W C18 Ceramic 0.1 μF, 50 V R14* General Open C19 Ceramic 0.1 μF, 50 V R15* General Open C20 Ceramic 1000 pF, 50 V R16* General Open C21 Film 0.22μF, 630 V R17 General 3.3 kΩ, 1/8 W C23* Ceramic 0.1 μF, 50 V R18 General 5.1 kΩ, 1/8 W C24* Ceramic 0.1 μF, 50 V R19 General 100 Ω, 1/8 W C25* Ceramic 0.1 μF, 50 V SV1 Pin header 2.54 mm pitch D1 General 1 A, 50 V SV2 Connector Equiv. to B2P3-VH D2 General 1 A, 50 V SV3 Connector Equiv. to B3P5-VH D3 General 1 A, 50 V IPM1 IC SCM1272MF D4 Zener VZ = 20 V, 0.5 W * Refers to a part that requires adjustment based on operation performance in an actual application. SCM1270MF-DSE Rev.1.5 SANKEN ELECTRIC CO., LTD. Dec. 26, 2018 https://www.sanken-ele.co.jp/en © SANKEN ELECTRIC CO., LTD. 2017 52 SCM1270MF Series Important Notes ● All data, illustrations, graphs, tables and any other information included in this document (the “Information”) as to Sanken’s products listed herein (the “Sanken Products”) are current as of the date this document is issued. The Information is subject to any change without notice due to improvement of the Sanken Products, etc. Please make sure to confirm with a Sanken sales representative that the contents set forth in this document reflect the latest revisions before use. ● The Sanken Products are intended for use as components of general purpose electronic equipment or apparatus (such as home appliances, office equipment, telecommunication equipment, measuring equipment, etc.). Prior to use of the Sanken Products, please put your signature, or affix your name and seal, on the specification documents of the Sanken Products and return them to Sanken. When considering use of the Sanken Products for any applications that require higher reliability (such as transportation equipment and its control systems, traffic signal control systems or equipment, disaster/crime alarm systems, various safety devices, etc.), you must contact a Sanken sales representative to discuss the suitability of such use and put your signature, or affix your name and seal, on the specification documents of the Sanken Products and return them to Sanken, prior to the use of the Sanken Products. The Sanken Products are not intended for use in any applications that require extremely high reliability such as: aerospace equipment; nuclear power control systems; and medical equipment or systems, whose failure or malfunction may result in death or serious injury to people, i.e., medical devices in Class III or a higher class as defined by relevant laws of Japan (collectively, the “Specific Applications”). Sanken assumes no liability or responsibility whatsoever for any and all damages and losses that may be suffered by you, users or any third party, resulting from the use of the Sanken Products in the Specific Applications or in manner not in compliance with the instructions set forth herein. ● In the event of using the Sanken Products by either (i) combining other products or materials or both therewith or (ii) physically, chemically or otherwise processing or treating or both the same, you must duly consider all possible risks that may result from all such uses in advance and proceed therewith at your own responsibility. ● Although Sanken is making efforts to enhance the quality and reliability of its products, it is impossible to completely avoid the occurrence of any failure or defect or both in semiconductor products at a certain rate. You must take, at your own responsibility, preventative measures including using a sufficient safety design and confirming safety of any equipment or systems in/for which the Sanken Products are used, upon due consideration of a failure occurrence rate and derating, etc., in order not to cause any human injury or death, fire accident or social harm which may result from any failure or malfunction of the Sanken Products. Please refer to the relevant specification documents and Sanken’s official website in relation to derating. ● No anti-radioactive ray design has been adopted for the Sanken Products. ● The circuit constant, operation examples, circuit examples, pattern layout examples, design examples, recommended examples, all information and evaluation results based thereon, etc., described in this document are presented for the sole purpose of reference of use of the Sanken Products. ● Sanken assumes no responsibility whatsoever for any and all damages and losses that may be suffered by you, users or any third party, or any possible infringement of any and all property rights including intellectual property rights and any other rights of you, users or any third party, resulting from the Information. ● No information in this document can be transcribed or copied or both without Sanken’s prior written consent. ● Regarding the Information, no license, express, implied or otherwise, is granted hereby under any intellectual property rights and any other rights of Sanken. ● Unless otherwise agreed in writing between Sanken and you, Sanken makes no warranty of any kind, whether express or implied, including, without limitation, any warranty (i) as to the quality or performance of the Sanken Products (such as implied warranty of merchantability, and implied warranty of fitness for a particular purpose or special environment), (ii) that any Sanken Product is delivered free of claims of third parties by way of infringement or the like, (iii) that may arise from course of performance, course of dealing or usage of trade, and (iv) as to the Information (including its accuracy, usefulness, and reliability). ● In the event of using the Sanken Products, you must use the same after carefully examining all applicable environmental laws and regulations that regulate the inclusion or use or both of any particular controlled substances, including, but not limited to, the EU RoHS Directive, so as to be in strict compliance with such applicable laws and regulations. ● You must not use the Sanken Products or the Information for the purpose of any military applications or use, including but not limited to the development of weapons of mass destruction. In the event of exporting the Sanken Products or the Information, or providing them for non-residents, you must comply with all applicable export control laws and regulations in each country including the U.S. Export Administration Regulations (EAR) and the Foreign Exchange and Foreign Trade Act of Japan, and follow the procedures required by such applicable laws and regulations. ● Sanken assumes no responsibility for any troubles, which may occur during the transportation of the Sanken Products including the falling thereof, out of Sanken’s distribution network. ● Although Sanken has prepared this document with its due care to pursue the accuracy thereof, Sanken does not warrant that it is error free and Sanken assumes no liability whatsoever for any and all damages and losses which may be suffered by you resulting from any possible errors or omissions in connection with the Information. ● Please refer to our official website in relation to general instructions and directions for using the Sanken Products, and refer to the relevant specification documents in relation to particular precautions when using the Sanken Products. ● All rights and title in and to any specific trademark or tradename belong to Sanken and such original right holder(s). DSGN-CEZ-16003 SCM1270MF-DSE Rev.1.5 SANKEN ELECTRIC CO., LTD. Dec. 26, 2018 https://www.sanken-ele.co.jp/en © SANKEN ELECTRIC CO., LTD. 2017 53