SDC03
Absolute maximum ratings
Symbol VCBO VCEO VEBO IC ICP IB PT Tj Tstg Ratings 60±10 60±10 6 1.5
NPN Darlington With built-in avalanche diode
(Ta=25°C)
External dimensions E
•••
SD
Electrical characteristics
Symbol ICBO IEBO VCEO hFE VCE(sat) VBE(sat) VFEC ton tstg tf fT Cob 1.1 50 2000 60 5000 1.2 1.8 1.3 0.5 4.0 1.0 50 25 Specification min typ max 10 3.5 70 12000 1.4 2.2 1.8 V V V Unit
(Ta=25°C)
Unit V V V A A A W °C °C °C/W
Conditions VCB=50V VEB=6V IC=10mA VCE=4V, IC=1A IC=1A, IB=2mA IFEC=1A VCC 30V, IC=1A, IB1=–IB2=2mA VCE=12V, IE=–0.1A VCB=10V, f=1MHz
µA
mA V
2.5 (PW≤1ms, Du≤10%) 0.1 3 (Ta=25°C) 150 –40 to +150 41.6
µs µs µs
MHz pF
θ j–a
sEquivalent circuit diagram
15,16 1 R1 R2 2 3
13,14 5
11,12 7
9,10
4
6
8
R1: 3.5kΩ typ R2: 200Ω typ
Characteristic curves
IC-VCE Characteristics (Typical)
2.5
2m A 1m A
hFE-IC Characteristics (Typical)
10000
hFE-IC Temperature Characteristics (Typical)
10000 5000
°C 25 =1 5°C 7 Ta °C 25 C 0° –3
(VCE=4V)
typ
(VCE=4V)
IB=10mA
2.0
mA 0.6
5000
A
m 0.4
1.5
0
A .3m
IC (A)
hFE
hFE
0.1 0.5 1 2.5
1000 500
1000 500
1.0
0.5
100
100 50 0.03 0.05
0 0 1 2 3 4 5 6
50 0.03 0.05
0.1
0.5
1
2.5
VCE (V)
IC (A)
IC (A)
VCE(sat)-IC Temperature Characteristics (Typical)
3
VCE(sat)-IB Characteristics (Typical)
3
IC-VBE Temperature Characteristics (Typical)
2.5
(IC / IB=1000)
(VCE=4V)
2.0
Ta=125°C
VCE (sat) (V)
25°C –30°C
IC=2A
IC (A)
75°C
VCE (sat) (A)
2
2
1.5
1A
1.0
1
1
0.5A
0.5
0 0.2
0.5
1
2.5
0 0.1
0.5
1
5
10
50 100
0 0
1
Ta= 125 75°C °C 25°C –30° C
2
3
IC (A)
IB (mA)
VBE (V)
θ j-a-PW Characteristics
50
3
4 3 2
PT-Ta Characteristics
5
1-1 Chip Operation 2-2 Chip Operation 3-3 Chip Operation 4-4 Chip Operation
Safe Operating Area (SOA)
10 0µ S
1m S
10
θ j–a (°C / W)
mS
2
1
PT (W)
IC (A)
10
1
0.5
5
1
Single Pulse
0.1 Without Heatsink
Ta=25°C
1 1
5
10
50 100
500 1000
0 0
50
100
150
PW (mS)
Ta (°C)
0.05 3
5
10
50
100
VCE (V)
194
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