SDC04_01

SDC04 Absolute maximum ratings Symbol VCBO VCEO VEBO IC ICP IB PT Tj Tstg Ratings 100±15 100±15 6 1.5 NPN Darlington With built-in avalanche diode (Ta=25°C) External dimensions E ••• SD Electrical characteristics Symbol ICBO IEBO VCEO hFE VCE(sat) VBE(sat) VFEC ton tstg tf fT Cob 1 85 2000 100 5000 1.0 1.7 1.2 0.6 3.0 1.0 30 20 Specification min typ max 10 3 115 12000 1.3 2.2 1.8 V V V Unit (Ta=25°C) Unit V V V A A A W °C °C °C/W Conditions VCB=85V VEB=6V IC=10mA VCE=4V, IC=1A IC=1A, IB=2mA IFEC=1A VCC 30V, IC=1A, IB1=–IB2=2mA VCE=12V, IE=–0.1A VCB=10V, f=1MHz µA mA V 2.5 (PW≤1ms, Du≤10%) 0.1 3 (Ta=25°C) 150 –40 to +150 41.6 µs µs µs MHz pF θ j–a sEquivalent circuit diagram 15,16 1 R1 R2 2 3 13,14 5 11,12 7 9,10 4 6 8 R1: 4kΩ typ R2: 150Ω typ Characteristic curves IC-VCE Characteristics (Typical) 2.5 IB=5mA 1mA A 0.5m hFE-IC Characteristics (Typical) 20000 10000 typ hFE-IC Temperature Characteristics (Typical) 20000 10000 5000 =1 Ta °C 25 °C 75 C ° 25 –3 (VCE=4V) (VCE=4V) 2.0 A 0.3m 5000 IC (A) 1.5 hFE hFE 1000 500 1000 500 0° C 1.0 0.2mA 0.5 100 100 0.1 0.5 1 2.5 0 0 1 2 3 4 5 6 50 0.03 0.05 50 0.03 0.05 0.1 0.5 1 2.5 VCE (V) IC (A) IC (A) VCE(sat)-IC Temperature Characteristics (Typical) 2 VCE(sat)-IB Characteristics (Typical) 3 IC-VBE Temperature Characteristics (Typical) 2.5 (IC / IB=1000) (VCE=4V) 2.0 2 IC=4A VCE (sat) (V) VCE (sat) (V) 1 Ta=125°C 75°C 25°C –30°C IC=2A IC (A) 1.5 1 IC-1A 0.5 0 0.3 0.5 1 2.5 0 0.1 0.5 1 5 10 50 100 0 0 1 Ta= 125 °C 75°C 2 5 °C –30° C 1.0 2 3 IC (A) IB (mA) VBE (V) θ j-a-PW Characteristics 50 PT-Ta Characteristics 3 4 3 2 Safe Operating Area (SOA) 5 1-1 Chip Operation 2-2 Chip Operation 3-3 Chip Operation 4-4 Chip Operation 10 1m s 0µ s θ j–a (°C / W) 2 1 10 ms PT (W) 1 5 1 IC (A) 10 0.5 0.1 0.05 Without Heatsink 1 1 5 10 50 100 500 1000 Single Pulse Ta=25°C 0 0 50 100 150 PW (mS) Ta (°C) 0.03 3 5 10 50 100 VCE (V) 195