SDC06_01

SDC06 Absolute maximum ratings Symbol VCBO VCEO VEBO IC ICP IB PT Tj Tstg Ratings 30 to 45 30 to 45 6 2 NPN With built-in avalanche diode (Ta=25°C) External dimensions E ••• SD Electrical characteristics Symbol ICBO IEBO VCEO hFE VCE(sat) VFEC ton tstg tf fT Cob ES/B 40 1.2 18.0 3.6 20 50 1.2 30 400 700 Specification min typ max 10 2.8 45 2000 0.2 0.6 2.0 V V V Unit (Ta=25°C) Unit V V V A A mA W °C °C °C/W Conditions VCB=30V VEB=6V IC=10mA VCE=4V, IC=0.5A IC=0.5A, IB=5mA IC=1A, IB=5mA IFEC=1A VCC 10V, IC=0.5A, IB1=5mA, IB2=0A VCE=12V, IE=–0.2A VCB=10V, f=1MHz L=10mH, Single pulse µA mA V 3 (PW≤1ms, Du≤10%) 30 3 (Ta=25°C) 150 –40 to +150 41.6 µs µs µs MHz pF mJ θ j–a sEquivalent circuit diagram 15,16 13,14 11,12 9,10 1 RB RBE 2 3 RB RBE 4 5 RB RBE 6 7 RB RBE 8 RB: 800Ω typ RBE: 2kΩ typ Characteristic curves IC-VCE Characteristics (Typical) 3 12 m A IB=30mA 8mA hFE-IC Characteristics (Typical) 1000 typ hFE-IC Temperature Characteristics (Typical) 1000 (VCE=4V) (VCE=4V) 5mA 2 500 500 Ta=125°C 75°C 25°C –30°C IC (A) hFE 3mA 2mA 1 1mA 0 0 1 2 3 4 5 6 100 0.03 0.05 hFE 0.1 0.5 1 3 100 0.03 0.05 0.1 0.5 1 3 VCE (V) IC (A) IC (A) VCE(sat)-IC Temperature Characteristics (Typical) 3 VCE(sat)-IB Characteristics (Typical) 1 IC-VBE Temperature Characteristics (Typical) (IC / IB=100) VCE (sat) (V) 1 Ta =1 25 °C 75° C 25 °C VCE (sat) (V) 2 IC=1A –30°C IC=0.5A 0 0.2 0.5 1 3 0 1 5 10 30 IC (A) IB (mA) θ j-a-PW Characteristics 50 3 4 3 2 PT-Ta Characteristics 5 1-1 Chip Operation 2-2 Chip Operation 3-3 Chip Operation 4-4 Chip Operation Safe Operating Area (SOA) 1mS θ j–a (°C / W) 2 PT (W) 10 1 1 5 IC (A) 50 100 150 0.5 1 1 1 5 10 50 100 500 1000 0 0 PW (mS) Ta (°C) 0.1 5 Single Pulse Without Heatsink Ta=25°C 10 50 VCE (V) 196