SI-8000GL

1-1-2 Switching Mode Regulator ICs SI-8000GL Series ■Features Compact, Separate Excitation Step-down Switching Mode Regulator ICs ■Absolute Maximum Ratings Parameter DC Input Voltage Power Dissipation Junction Temperature Storage Temperature Thermal Resistance (junction to case) Thermal Resistance (junction to ambient air) Symbol VIN PD*1 Tj Tstg Ratings 53 1 +125 –40 to +125 28 100 Unit V W °C °C °C/W °C/W • DIP 8 pin package • Output current: 1.5A • High efficiency: 86% (at VIN = 20V, lO = 1A, VO = 5V) • Capable of downsize a choke-coil due to IC's high switching frequency (250kHz). (Compared with conventional Sanken devices) • The output-voltage-variable type can vary its output voltage from 1V to 14V because of its low reference voltage (Vref) of 1V. • Wide Input Voltage Range (8 to 50V) • Output ON/OFF available • Built-in overcurrent protection and thermal protection circuits θ j-c θ j-a *1: Limited by thermal protection. ■Applications • Onboard local power supplies • OA equipment • For stabilization of the secondary-side output voltage of switching power supplies ■Recommended Operating Conditions Ratings Parameter DC Input Voltage Range Output Voltage Range Output Current Range Operating Junction Temperature Range Operating Temperature Range Symbol VIN VO IO Tjop Top SI-8010GL (8 or VO+3)*1 to 50 1 to 14 0.02 to 1.5 –30 to +125 –30 to +125 *1: The minimum value of an input voltage range is the higher of either 8V or VO+3V. ■Electrical Characteristics Ratings Parameter Symbol min. Reference Voltage Efficiency Oscillation Frequency Line Regulation Load Regulation Temperature Coefficient of Reference Voltage Overcurrent Protection Starting Current Quiescent Circuit Current Circuit Current at Output OFF CE/SS* Terminal Low Level Voltage Terminal Outflow Current at Low Voltage VREF Conditions Eff Conditions FOSC Conditions ∆VOLINE Conditions ∆VOLOAD Conditions ∆VREF/∆Ta IS Conditions Iq Conditions Iq(OFF) Conditions VSSL ISSL Conditions VSSL=0V VIN=12V, VON/OFF=0.3V 0.5 50 1.6 VIN=12V 7 VIN=12V, IO=0A 400 0.97 SI-8010GL (Variable type) typ. 1.00 VIN=12V, IO=1A 86 VIN=20V, IO=1A, VO=5V 250 VIN=12V, IO=1A 20 VIN=10 to 30V, IO=1A 10 VIN=12V, IO=0.1 to 1.5A ± 0.5 30 40 max. 1.03 (Ta=25°C) Unit V % kHZ mV mV mV/°C A mA µA V µA *: Pin 2 is the CE/SS pin. Soft start at power on can be performed with a capacitor connected to this pin.The output can also be turned ON/OFF with this pin. The output is stopped by setting the voltage of this pin to VSSL or lower. CE/SS-pin voltage can be changed with an open-collector drive circuit of a transistor. When using both the soft-start and ON/OFF functions together, the discharge current from C4 flows into the ON/OFF control transistor. Therefore, limit the current securely to protect the transistor if C3 capacitance is large. The CE/SS pin is pulled up to the power supply in the IC, so applying the external voltage is prohibited. SI-8000GL SI-8000GL SI-8000GL 2 CE/SS 2 CE/SS C4 2 CE/SS C4 VO. ON/OFF Soft start Soft start +VO. ON/OFF 68 ICs SI-8000GL Series ■External Dimensions (DIP8) 6.5±0.2 (Unit: mm) 8 a 7 6 8010GL b c 5 SK 1 2 3 4 9.4±0.3 4.2±0.3 1.0+0.3 -0.05 1.5+0.3 -0.05 7.5±0.5 7.6 Pin Assignment 1. GND 2. CE/SS 3. Reg 4. SWOUT 5. VIN 6. B.S 7. Comp 8. VREF Plastic Mold Package Type Flammability: UL 94V-0 Product Mass: Approx. 0.49 g 3.4±0.1 +0.1 0.25-0.0 5 0.5±0.1 2.54 0.89 TYP 3.3±0.2 0.25 M 0°∼15° ■Block Diagram SI-8010GL ■Ta-PD Characteristics 2 1.8 PD=VO • IO Power Dissipation PD (W) VIN 100 VO –1 –VF • IO 1– ηχ VIN 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 θ j-a:100°C/W UVLO CE/SS CE/SS P.REG OCP BS Boot REG TSD DRIVE Reg OSC + - PWM LOGIC SWOUT Note 1: The efficiency depends on the input voltage and the output current. Therefore, obtain the value from the efficiency graph and substitute the percentage in the formula above. Note 2: Thermal design for D1 must be considered separately. 25 50 75 100 125 VREF Comp Amp + 0 –25 0 Ambient Temperature Ta (°C) 1V GND VO : Output voltage VIN : Input voltage IO : Output current ηχ : Efficiency VF : Diode D1 forward voltage RK16···0.4V(IO=1A) ■Typical Connection Diagram SI-8010GL 6 B.S 5 R1 L1 C3 VIN 2 C1 VIN CE/SS C7 SI-8010GL Comp 7 C5 C6 SWOUT 4 D1 R2 V0 + Reg 3 C4 GND 1 VREF + C2 C8 IREF 8 R3 C1: 220µF/63V C2: 470µF/25V C3: 0.1µF C4: 1000pF C5: 0.1µF C6: 0.047µF C7: 0.1µF R2= C8: 0.1µF R1: 47Ω L1: 47µH D1: RK16 (Sanken) GND GND Diode D1 • Be sure to use a Schottky-barrier diode as D1. If other diodes like fast recovery diodes are used, IC may be destroyed because of the reverse voltage generated by the recovery voltage or ON voltage. Choke coil L1 • If the winding resistance of the choke coil is too high, the efficiency may drop below the rated value. • As the overcurrent protection starting current is approx. 2.5 A, take care concerning heat radiation from the choke coil caused by magnetic saturation due to overload or short-circuited load. Capacitor C1, C2 • As large ripple currents flow through C1 and C2, use high-frequency and low-impedance capacitors aiming for switching-mode-power-supply use. Especially when the impedance of C2 is high, the switching waveform may become abnormal at low temperatures. For C2, do not use a capacitor with an extremely low equivalent series resistance (ESR) such as an OS capacitor or a tantalum capacitor, which may cause an abnormal oscillation. Resistors R2, R3 • R2 and R3 are the resistors to set the output voltage. Set their values so that IREF becomes approx. 2 mA. Obtain R2 and R3 values by the following formula above. * To create the optimum operating conditions, place the components as close as possible to each other. (VOUT–VREF) (VOUT–1) 1 VREF . = 500(Ω) = = (Ω), R3 = . IREF 2×10–3 IREF 2×10–3 ICs 69 qSI-8000GL Series sExample of Pattern on PC Board SI-8010GL C9 C6 VIN R2 R3 C1 + C7 C2 R1 + GND C3 D1 L1 C8 V0 C4 C5 Recommended Pattern *For the optimum conditions, use one-point GND wiring centering on pin 1, and place each component as closely as possible. sTa-PD Characteristics 100 VO –1 –VF • IO 1– ηχ VIN PD=VO • IO 1.8 1.6 1.4 1.2 θ j-a:100°C/W Power Dissipation PD (W) 1 0.8 0.6 0.4 0.2 0 –25 0 25 50 75 100 125 Note 1: The efficiency depends on the input voltage and the output current. Thus, obtain the value from the efficiency graph and substitute the percentage in the formula above. Note 2: Thermal design for D1 must be considered separately. VO : Output voltage VIN : Input voltage IO : Output current ηχ : Efficiency VF : Diode forward voltage RK16···0.4V(IO=1A) Ambient Temperature Ta (°C) sPackaging specifications Minimum package Stick Qty: 50 pcs/1 stick 5.0±1.0 11.6±0.2 (Unit: mm) Stopper (with fin) 4.2±0.15 13±0.2 505±1.0 5.7±0.2 Stopper (without fin) 50pcs 5 qSI-8000GL Series sTypical characteristics (SI-8010GL) Efficiency Characteristics 100 VO=24V 90 VO=5V Ta=25°C IO=1.5A 1A Output Voltage 1.2 *Load=C.R Ta=25°C Load Regulation 1.03 Ta=25°C 1.0 1.02 Output Voltage VO (V) 0.8 IO=0.02A 1A 1.5A 0.6 Output Voltage VO (V) 0.5A Efficiency η (%) 1.01 VIN=8V 12V 1.00 20V 30V 0.99 80 IO=1.5A 1A 0.5A IO=1.5A 70 VO=1.8V 0.4 60 1A 50 0.5A 0 10 20 30 40 50 0.2 0.98 0 0 5 10 15 20 0.97 0 0.5 1.0 1.5 Input Voltage VIN (V) Input Voltage VIN (V) Output Current IO (A) Overcurrent Protection Characteristics 1.2 Ta=25°C VIN=30V 20V 12V 8V 1.0 Thermal Protection Characteristics 1.2 VIN=12V, IO=0.02A Temperature Characteristics 300 VIN=12V, IO=1A 1.015 Frequency Freq (kHz) Efficiency η (%) 1.0 250 Freq 1.01 Output Voltage VO (V) Output Voltage VO (V) 0.8 0.8 200 1.005 0.6 0.6 TSD OFF 0.4 TSD ON 150 VO 100 1 0.4 0.995 0.2 0.2 0 0 1 2 3 4 0 50 100 150 200 50 –50 η 0 50 100 0.99 150 Output Current IO (A) Ambient Temperature Ta (°C) Ambient Temperature Ta (°C) 6 Output Voltage VO (V)